isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF ·Complement to Type BDT31F/AF/BF/CF/DF APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BDT32F -80 BDT32AF -100 BDT32BF -120 BDT32CF -140 BDT32DF -160 BDT32F -40 BDT32AF -60 BDT32BF -80 BDT32CF -100 BDT32DF -120 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -5 A IB Base Current -1 A PC Collector Power Dissipation TC=25℃ 22 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 8.12 ℃/W 55 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage CONDITIONS MIN BDT32F -40 BDT32AF -60 BDT32BF IC= -30mA; IB= 0 TYP. MAX V -80 BDT32CF -100 BDT32DF -120 UNIT BDT32F/AF/BF/CF IC= -3A; IB= -0.375A -1.2 BDT32DF IC= -3A; IB= -0.75A -2.5 B V B VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -4V -1.8 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 -0.2 mA -0.1 mA -0.2 mA ICEO Collector Cutoff Current BDT32F/AF VCE= -30V; IB= 0 BDT32BF/CF VCE= -60V; IB= 0 BDT32DF VCE= -90V; IB= 0 B B B IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A ; VCE= -4V BDT32F/AF/BF/CF hFE-2 DC Current Gain 10 50 IC= -3A ; VCE= -4V BDT32DF fT 25 Current-Gain—Bandwidth Product 5 IC= -0.5A ; VCE= -10V 3 MHz Switching Times ton Turn-On Time toff Turn-Off Time 0.3 μs 1.0 μs IC= -1.0A; IB1= -IB2= -0.1A isc Website：www.iscsemi.cn