BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK ● AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D ● 40 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 1.5 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW53 BDW53B 60 VCBO 80 BDW53C 100 BDW53D 120 BDW53 45 BDW53A Collector-emitter voltage (IB = 0) (see Note 1) BDW53B UNIT 45 BDW53A Collector-base voltage (IE = 0) VALUE V 60 VCEO BDW53C 80 V 100 BDW53D 120 V EBO 5 Continuous collector current IC 4 A Continuous base current IB 50 mA Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 40 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W ½LIC 2 25 mJ Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C Emitter-base voltage Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V (BR)CEO ICEO ICBO IEBO hFE VBE(on) VCE(sat) VEC TEST CONDITIONS Collector-emitter breakdown voltage IC = 30 mA IB = 0 MIN (see Note 5) BDW53 45 BDW53A 60 BDW53B 80 BDW53C 100 BDW53D 120 TYP MAX V VCE = 30 V IB = 0 BDW53 0.5 V CE = 30 V IB = 0 BDW53A 0.5 V CE = 40 V IB = 0 BDW53B 0.5 V CE = 50 V IB = 0 BDW53C 0.5 V CE = 60 V IB = 0 BDW53D 0.5 VCB = 45 V IE = 0 BDW53 0.2 V CB = 60 V IE = 0 BDW53A 0.2 V CB = 80 V IE = 0 BDW53B 0.2 V CB = 100 V IE = 0 BDW53C 0.2 Collector cut-off V CB = 120 V IE = 0 BDW53D 0.2 current V CB = 45 V IE = 0 TC = 150°C BDW53 5 V CB = 60 V IE = 0 TC = 150°C BDW53A 5 V CB = 80 V IE = 0 TC = 150°C BDW53B 5 V CB = 100 V IE = 0 TC = 150°C BDW53C 5 V CB = 120 V IE = 0 TC = 150°C BDW53D 5 VEB = IC = 0 Collector-emitter cut-off current Emitter cut-off current 5V 2 Forward current VCE = 3V IC = 1.5 A transfer ratio V CE = 3V IC = VCE = 3V IC = 1.5 A Base-emitter voltage 4A Collector-emitter IB = 30 mA IC = 1.5 A saturation voltage IB = 40 mA IC = IE = 4A Parallel diode forward voltage 4A (see Notes 5 and 6) UNIT 750 mA mA mA 20000 100 (see Notes 5 and 6) 2.5 2.5 (see Notes 5 and 6) 4 IB = 0 V V 3.5 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 3.125 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † † MIN ton Turn-on time IC = 2 A IB(on) = 8 mA IB(off) = -8 mA toff Turn-off time V BE(off) = -5 V RL = 15 Ω tp = 20 µs, dc ≤ 2% Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TYP 1 µs 4.5 µs BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS110AD 20000 TC = -40°C TC = 25°C TC = 100°C 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 1000 VCE = 3 V t p = 300 µs, duty cycle < 2% 100 0·5 1·0 TCS110AB 2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 1·5 1·0 0·5 5·0 TC = -40°C TC = 25°C TC = 100°C 0 0·5 IC - Collector Current - A 1·0 5·0 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS110AC VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 5·0 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS110AC 1·0 0·1 BDW53 BDW53A BDW53B BDW53C BDW53D 0.01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS110AB Ptot - Maximum Power Dissipation - W 60 50 40 30 20 10 0 0 25 50 75 100 TC - Case Temperature - °C Figure 5. PRODUCT 4 INFORMATION 125 150 BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT 5 INFORMATION MDXXBE BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 6 INFORMATION