isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 750(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A -80V(Min)- BDX86B; -100V(Min)- BDX86C ·Complement to Type BDX85/A/B/C APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BDX86 -45 BDX86A -60 BDX86B -80 BDX86C -100 BDX86 -45 BDX86A -60 BDX86B -80 BDX86C -100 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current -100 mA PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.75 ℃/W BDX86/A/B/C isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDX86/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BDX86 -45 BDX86A -60 TYP. MAX IC= -100mA; IB= 0 UNIT V BDX86B -80 BDX86C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -40mA -4.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -8A; IB= -80mA -4.0 V VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -3V -2.8 V BDX86 VCB= -45V; IE= 0 VCB= -45V; IE= 0; TC= 150℃ -0.5 -5.0 BDX86A VCB= -60V; IE= 0 VCB= -60V; IE= 0; TC= 150℃ -0.5 -5.0 BDX86B VCB= -80V; IE= 0 VCB= -80V; IE= 0; TC= 150℃ -0.5 -5.0 BDX86C VCB= -100V; IE= 0 VCB= -100V; IE= 0; TC= 150℃ -0.5 -5.0 BDX86 VCE= -22V; IB= 0 BDX86A VCE= -30V; IB= 0 BDX86B VCE= -40V; IB= 0 BDX86C VCE= -50V; IB= 0 ICBO ICEO Collector Cutoff Current Collector Cutoff Current B B B B B -1.0 mA -2.0 mA B B IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A; VCE= -3V 1000 hFE-2 DC Current Gain IC= -4A; VCE= -3V 750 hFE-3 DC Current Gain IC= -8A; VCE= -4V 200 isc Website：www.iscsemi.cn mA 2 18000