JMNIC BFG424W Npn 25 ghz wideband transistor Datasheet

BFG424W
NPN 25 GHz wideband transistor
Rev. 01 — 21 March 2006
Product data sheet
1. Product profile
1.1 General description
NPN double polysilicon wideband transistor with buried layer for low voltage applications
in a plastic, 4-pin dual-emitter SOT343R package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
■
■
■
■
■
Very high power gain
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance
1.3 Applications
■ Radio Frequency (RF) front end wideband applications such as:
◆ analog and digital cellular telephones
◆ cordless telephones (Cordless Telephone (CT), Personal Handy-phone
System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)
◆ radar detectors
◆ pagers
◆ Satellite Antenna TeleVison (SATV) tuners
◆ high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise
Block (LNB)
1.4 Quick reference data
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCBO
collector-base voltage
open emitter
-
-
10
V
VCEO
collector-emitter voltage
open base
-
-
4.5
V
IC
collector current
Ptot
total power dissipation
Tsp ≤ 103 °C
[1]
-
25
30
mA
-
-
135
mW
BFG424W
Philips Semiconductors
NPN 25 GHz wideband transistor
Table 1:
Quick reference data …continued
Symbol
Parameter
Conditions
Min
Typ
Max
hFE
DC current gain
IC = 25 mA; VCE = 2 V;
Tj = 25 °C
50
80
120
CCBS
collector-base
capacitance
VCB = 2 V; f = 1 MHz
-
105
-
fF
fT
transition frequency
IC = 25 mA; VCE = 2 V;
f = 2 GHz; Tamb = 25 °C
-
25
-
GHz
Gp(max)
maximum power gain
IC = 25 mA; VCE = 2 V;
f = 2 GHz; Tamb = 25 °C
-
22
-
dB
NF
noise figure
IC = 2 mA; VCE = 2 V;
f = 2 GHz; ΓS = Γopt
-
1.2
-
dB
[2]
Unit
[1]
Tsp is the temperature at the soldering point of the emitter pins.
[2]
Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG), see
Figure 8.
2. Pinning information
Table 2:
Pinning
Pin
Description
1
emitter
2
base
3
emitter
4
collector
Simplified outline
3
Symbol
4
4
2
1, 3
2
1
mbb159
3. Ordering information
Table 3:
Ordering information
Type number
BFG424W
Package
Name
Description
Version
-
plastic surface mounted package; reverse pinning;
4 leads
SOT343R
4. Marking
Table 4:
Marking
Type number
Marking code [1]
BFG424W
ND*
[1]
* = p: made in Hong Kong.
BFG424W_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 21 March 2006
2 of 13
BFG424W
Philips Semiconductors
NPN 25 GHz wideband transistor
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
10
V
VCEO
collector-emitter voltage
open base
-
4.5
V
VEBO
emitter-base voltage
open collector
-
1
V
IC
collector current
-
30
mA
-
135
mW
Tsp ≤ 103 °C
[1]
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
[1]
Tsp is the temperature at the soldering point of the emitter pins.
6. Thermal characteristics
Table 6:
Symbol
Rth(j-sp)
[1]
Thermal characteristics
Parameter
Conditions
thermal resistance from junction
to solder point
Tsp ≤ 103 °C
[1]
Typ
Unit
340
K/W
Tsp is the temperature at the soldering point of the emitter pins.
mgg681
200
Ptot
(mW)
150
100
50
0
0
40
80
160
120
Tsp (°C)
Fig 1. Power derating curve
BFG424W_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 21 March 2006
3 of 13
BFG424W
Philips Semiconductors
NPN 25 GHz wideband transistor
7. Characteristics
Table 7:
Characteristics
Tj = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)CBO collector-base
breakdown voltage
IC = 2.5 µA; IE = 0 mA
10
-
-
V
V(BR)CEO collector-emitter
breakdown voltage
IC = 1 mA; IB = 0 mA
4.5
-
-
V
V(BR)EBO open-collector
emitter-base
breakdown voltage
IE = 2.5 µA; IC = 0 mA
1
-
-
V
ICBO
collector-base
cut-off current
IE = 0 mA; VCB = 4.5 V
-
-
15
nA
hFE
DC current gain
IC = 25 mA; VCE = 2 V
50
80
120
CCES
collector-emitter
capacitance
VCB = 2 V; f = 1 MHz
-
385
-
fF
CEBS
emitter-base
capacitance
VEB = 0.5 V; f = 1 MHz
-
515
-
fF
CCBS
collector-base
capacitance
VCB = 2 V; f = 1 MHz
-
105
-
fF
fT
transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C
-
25
-
GHz
Gp(max)
maximum power
gain
-
22
-
dB
|s21|2
insertion power gain IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C
-
18
-
dB
NF
noise figure
IC = 2 mA; VCE = 2 V;
f = 900 MHz; ΓS = Γopt
-
0.8
-
dB
IC = 2 mA; VCE = 2 V; f = 2 GHz;
ΓS = Γopt
-
1.2
-
dB
IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C
PL(1dB)
output power at
1 dB gain
compression
IC = 25 mA; VCE = 2 V; f = 2 GHz;
ZS = ZS(opt); ZL = ZL(opt)
[2]
-
12
-
dBm
IP3
third-order intercept IC = 25 mA; VCE = 2 V; f = 2 GHz;
point
ZS = ZS(opt); ZL = ZL(opt)
[2]
-
22
-
dBm
[1]
Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG, see Figure 8.
[2]
ZS is optimized for noise; ZL is optimized for gain.
BFG424W_1
Product data sheet
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 21 March 2006
4 of 13
BFG424W
Philips Semiconductors
NPN 25 GHz wideband transistor
001aad805
40
001aad806
120
(1)
IC
(mA)
hFE
(2)
30
(1)
(2)
(3)
(3)
80
(4)
20
(5)
(6)
40
(7)
10
(8)
0
0
0
1
2
3
4
5
0
10
20
VCE (V)
30
40
IC (mA)
(1) IB = 400 µA
(1) VCE = 3 V
(2) IB = 350 µA
(2) VCE = 2 V
(3) IB = 300 µA
(3) VCE = 1 V
(4) IB = 250 µA
(5) IB = 200 µA
(6) IB = 150 µA
(7) IB = 100 µA
(8) IB = 50 µA
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
Fig 3. DC current gain as a function of collector
current; typical values
001aad807
200
CCBS
(fF)
160
120
80
40
0
0
1
2
3
4
5
VCB (V)
f = 1 MHz
Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values
BFG424W_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 21 March 2006
5 of 13
BFG424W
Philips Semiconductors
NPN 25 GHz wideband transistor
001aad808
30
001aad809
30
MSG
fT
(GHz)
G
(dB)
s21 2
20
20
10
10
0
1
0
102
10
1
102
10
IC (mA)
IC (mA)
VCE = 2 V; f = 2 GHz; Tamb = 25 °C
VCE = 2 V; f = 0.9 GHz; Tamb = 25 °C
Fig 5. Transition frequency as a function of collector
current; typical values
001aad810
30
Fig 6. Gain as a function of collector current; typical
values
001aad811
50
G
(dB)
G
(dB)
40
Gp(max)
MSG
MSG
20
s21 2
30
20
s21 2
Gp(max)
10
10
0
1
102
10
0
10−1
IC (mA)
102
10
f (GHz)
VCE = 2 V; f = 2 GHz; Tamb = 25 °C
VCE = 2 V; IC = 25 mA; Tamb = 25 °C
Fig 7. Gain as a function of collector current; typical
values
Fig 8. Gain as a function of frequency; typical values
BFG424W_1
Product data sheet
1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 21 March 2006
6 of 13
BFG424W
Philips Semiconductors
NPN 25 GHz wideband transistor
90°
1.0
+1
135°
+0.5
12 GHz
0.8
45°
+2
0.6
+0.2
0.4
+5
0.2
180°
0
0.2
1
0.5
2
5
10
0°
0
100 MHz
−5
−0.2
−135°
−2
−0.5
−45°
−1
1.0
−90°
001aad812
VCE = 2 V; IC = 25 mA; Zo = 50 Ω
Fig 9. Common emitter input reflection coefficient (s11); typical values
90°
135°
180°
0.5
0.4
45°
0.3
0.2
0.1
0
100 MHz
0°
12 GHz
−135°
−45°
−90°
001aad813
VCE = 2 V; IC = 25 mA
Fig 10. Common emitter reverse transmission coefficient (s12); typical values
BFG424W_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 21 March 2006
7 of 13
BFG424W
Philips Semiconductors
NPN 25 GHz wideband transistor
90°
135°
45°
100 MHz
180°
50
40
30
20
10
0
0°
12 GHz
−135°
−45°
−90°
001aad814
VCE = 2 V; IC = 25 mA
Fig 11. Common emitter forward transmission coefficient (s21); typical values
90°
1.0
+1
135°
+0.5
12 GHz
0.8
45°
+2
0.6
+0.2
0.4
+5
0.2
180°
0
0.2
1
0.5
2
5
10
0°
0
100 MHz
−5
−0.2
−135°
−2
−0.5
−45°
−1
−90°
1.0
001aad815
VCE = 2 V; IC = 25 mA; Zo = 50 Ω
Fig 12. Common emitter output reflection coefficient (s22); typical values
BFG424W_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 21 March 2006
8 of 13
BFG424W
Philips Semiconductors
NPN 25 GHz wideband transistor
7.1 Noise data
Table 8:
Noise data
VCE = 2 V; typical values.
f
IC
NFmin
Γopt
(MHz)
(mA)
(dB)
ratio
(deg)
(Ω)
900
1
0.7
0.67
19.1
0.40
2
0.81
0.48
17.8
0.27
4
1
0.28
11.7
0.24
10
1.4
0.02
−63.9
0.19
15
1.65
0.11
−162.4
0.18
20
1.9
0.19
−165.5
0.18
25
2.1
0.25
−166.3
0.19
30
2.3
0.29
−166.5
0.19
2000
rn
1
1.3
0.56
57.5
0.36
2
1.2
0.43
57.2
0.25
4
1.2
0.22
60.8
0.18
10
1.6
0.06
137.4
0.19
15
1.9
0.13
−162.1
0.20
20
2.2
0.17
−155.5
0.20
25
2.5
0.22
−152.2
0.21
30
2.8
0.27
−150.8
0.25
001aad816
3
NFmin
(dB)
2
(1)
(2)
1
0
0
10
20
30
IC (mA)
(1) f = 2 GHz
(2) f = 900 MHz
Fig 13. Minimum noise figure as a function of collector current; typical values
BFG424W_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 21 March 2006
9 of 13
BFG424W
Philips Semiconductors
NPN 25 GHz wideband transistor
8. Package outline
Plastic surface-mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-05-21
06-03-16
SOT343R
Fig 14. Package outline SOT343R
BFG424W_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 21 March 2006
10 of 13
BFG424W
Philips Semiconductors
NPN 25 GHz wideband transistor
9. Revision history
Table 9:
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFG424W_1
20060321
Product data sheet
-
-
BFG424W_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 21 March 2006
11 of 13
BFG424W
Philips Semiconductors
NPN 25 GHz wideband transistor
10. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Trademarks
12. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
BFG424W_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 21 March 2006
12 of 13
BFG424W
Philips Semiconductors
NPN 25 GHz wideband transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Noise data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information . . . . . . . . . . . . . . . . . . . . 12
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 21 March 2006
BFG424W_1
Published in The Netherlands
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