Vishay BFP93AW Silicon npn planar rf transistor Datasheet

BFP93A / BFP93AW
VISHAY
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
2
1
• High power gain
• Low noise figure
• High transition frequency
SOT-143
3
4
Applications
RF amplifier up to GHz range.
2
1
SOT-343
Mechanical Data
Typ: BFP93A
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Marking: FE
Pinning:
1 = Collector, 2 = Emitter
3 = Base, 4 = Emitter
Typ: BFP93AW
3
4
Electrostatic sensitive device.
Observe precautions for handling.
13579
Case: SOT-343 Plastic case
Weight: approx. 6.0 mg
Marking: WFE
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Collector-base voltage
Parameter
Test condition
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
2
V
IC
50
mA
Ptot
200
mW
Tj
150
°C
Tstg
-65 to +150
°C
Symbol
Value
Unit
RthJA
450
K/W
Collector current
Total power dissipation
Tamb ≤ 60 °C
Junction temperature
Storage temperature range
Maximum Thermal Resistance
Parameter
Junction ambient
1)
Test condition
1)
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Document Number 85020
Rev. 1.4, 03-Sep-04
www.vishay.com
1
BFP93A / BFP93AW
VISHAY
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Max
Unit
Collector-emitter cut-off current
Parameter
VCE = 20 V, VBE = 0
Test condition
ICES
100
µA
Collector-base cut-off current
VCB = 15 V, IE = 0
ICBO
100
nA
Emitter-base cut-off current
VEB = 2 V, IC = 0
IEBO
10
µA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
V(BR)CEO
Collector-emitter saturation
voltage
IC = 50 mA, IB = 5 mA
DC forward current transfer ratio VCE = 5 V, IC = 30 mA
Symbol
Min
Typ.
12
VCEsat
V
0.1
0.4
hFE
40
90
150
Symbol
Min
Typ.
Max
V
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Unit
Transition frequency
VCE = 5 V, IC = 30 mA,
f = 500 MHz
fT
6
GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
0.45
pF
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Cce
0.2
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
1.25
pF
Noise figure
VCE = 8 V, ZS = 50 Ω,
f = 800 MHz, IC = 5 mA
F
1.6
dB
VCE = 8 V, ZS = 50 Ω,
f = 800 MHz, IC = 25 mA
F
2.1
dB
VCE = 8 V, ZS = 50 Ω, ZL = ZLopt,
IC = 25 mA, f = 800 MHz
Gpe
17
dB
VCE = 8 V, ZS = 50 Ω, ZL = ZLopt,
IC = 25 mA, f = 2 GHz
Gpe
10
dB
V1 = V2
260
mV
IP3
31
dBm
Power gain
Linear output voltage - two tone
intermodulation test
VCE = 8 V, IC = 25 mA,
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
Third order intercept point
VCE = 8 V, IC = 25 mA,
f = 800 MHz
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2
Document Number 85020
Rev. 1.4, 03-Sep-04
BFP93A / BFP93AW
VISHAY
Vishay Semiconductors
Common Emitter S-Parameters
Z0 = 50 Ω, Tamb = 25 °C, unless otherwise specified
VCE/V
IC/mA
f/MHz
S11
S21
LIN
MAG
ANG
LIN
MAG
ANG
3
5
5
10
100
0.642
-64.0
22.49
300
500
0.566
-130.1
0.555
-156.2
800
0.560
1000
30
10
30
Document Number 85020
Rev. 1.4, 03-Sep-04
S22
LIN
MAG
ANG
LIN
MAG
ANG
143.1
0.026
61.3
0.797
-31.5
12.29
109.6
8.00
95.5
0.045
43.5
0.433
-52.7
0.053
42.7
0.293
-176.6
5.25
-54.6
82.4
0.066
45.5
0.221
0.567
173.8
-52.7
4.30
75.8
0.075
46.6
0.204
-52.6
1200
0.580
1500
0.601
166.3
3.64
69.3
0.085
47.0
0.192
-54.2
156.6
2.97
60.2
0.099
46.6
0.181
1800
-60.0
0.620
148.0
2.52
52.1
0.112
45.6
0.171
-68.0
2000
0.642
143.3
2.30
46.6
0.122
44.6
0.170
-74.4
2200
0.662
137.5
2.13
41.5
0.132
43.5
0.169
-79.8
2500
0.691
130.2
1.90
33.4
0.143
37.9
0.168
-92.4
2800
0.715
123.1
1.70
25.9
0.152
37.7
0.176
-104.2
3000
0.733
119.4
1.59
21.6
0.160
36.4
0.180
-112.7
100
0.486
-114.2
34.23
127.8
0.017
56.0
0.600
-48.7
300
0.552
-162.2
14.56
99.7
0.029
55.0
0.248
-67.8
500
0.563
-177.2
9.10
89.1
0.040
59.7
0.149
-66.7
800
0.572
169.7
5.84
78.5
0.058
62.0
0.105
-59.3
1000
0.578
162.6
4.75
72.6
0.071
61.4
0.098
-57.0
1200
0.590
157.0
4.01
67.0
0.084
60.0
0.093
-58.5
1500
0.609
149.7
3.25
58.4
0.101
57.5
0.090
-67.5
1800
0.631
142.5
2.76
51.0
0.117
54.4
0.086
-80.2
2000
0.649
138.7
2.50
45.9
0.129
52.1
0.089
-90.0
2200
0.673
133.3
2.31
41.0
0.140
50.0
0.091
-97.4
2500
0.698
126.9
2.06
33.3
0.151
43.7
0.099
-116.4
2800
0.718
120.6
1.84
26.5
0.162
42.2
0.112
-129.8
3000
0.736
116.6
1.72
21.9
0.169
40.3
0.124
-138.5
100
0.658
-59.4
22.80
144.7
0.024
62.3
0.816
-28.2
300
0.557
-125.3
12.81
111.0
0.042
44.4
0.468
-46.6
500
0.538
-152.8
8.42
96.6
0.050
43.3
0.331
-46.8
800
0.543
-174.4
5.51
83.3
0.062
45.8
0.263
-44.0
1000
0.546
175.6
4.50
76.6
0.071
47.4
0.248
-43.8
1200
0.561
167.7
3.82
70.2
0.080
47.6
0.237
-45.1
1500
0.578
157.8
3.12
61.1
0.093
47.4
0.225
-50.0
1800
0.601
149.0
2.65
53.2
0.105
46.7
0.215
-56.5
2000
0.623
143.9
2.41
47.7
0.115
46.0
0.213
-61.8
2200
0.640
138.2
2.23
42.6
0.124
45.0
0.211
-66.5
2500
0.673
131.0
1.99
34.7
0.136
39.4
0.206
-77.4
2800
0.696
123.9
1.79
27.0
0.144
39.3
0.208
-87.9
3000
0.709
119.6
1.68
22.7
0.151
38.0
0.208
-95.7
100
0.483
-104.7
35.46
129.2
0.016
57.3
0.625
-43.0
deg
3
S12
deg
deg
deg
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BFP93A / BFP93AW
VISHAY
Vishay Semiconductors
VCE/V
IC/mA
f/MHz
S11
S21
LIN
MAG
ANG
300
0.519
500
800
ANG
-157.7
15.38
0.525
-174.0
0.531
172.2
1000
0.527
1200
8
8
www.vishay.com
4
5
10
15
S22
LIN
MAG
ANG
LIN
MAG
ANG
100.3
0.028
55.0
0.276
-54.3
9.63
89.2
6.21
78.4
0.039
59.2
0.184
-47.0
0.057
61.3
0.153
165.0
5.05
-36.7
72.5
0.069
60.9
0.151
0.534
159.5
-34.6
4.28
66.5
0.081
59.4
0.149
1500
0.547
-35.2
151.1
3.50
57.7
0.099
56.3
0.145
1800
-40.7
0.561
143.1
2.98
49.8
0.115
52.8
0.138
-48.2
2000
0.570
138.1
2.72
44.2
0.127
50.3
0.138
-55.2
2200
0.587
131.9
2.53
38.9
0.139
47.9
0.139
-60.9
2500
0.601
123.8
2.27
30.1
0.154
40.8
0.129
-75.2
2800
0.619
114.4
2.07
22.3
0.165
38.4
0.136
-87.8
3000
0.628
108.4
1.95
17.2
0.174
35.4
0.140
-98.5
100
0.807
-37.8
14.08
154.2
0.026
69.9
0.906
-17.3
deg
8
S12
LIN
MAG
deg
deg
deg
300
0.646
-94.1
9.77
121.8
0.054
45.8
0.656
-33.8
500
0.573
-126.8
6.93
104.3
0.065
37.9
0.510
-37.1
800
0.549
-155.7
4.70
88.5
0.073
34.7
0.423
-38.2
1000
0.544
-168.8
3.89
80.8
0.078
34.4
0.399
-39.0
1200
0.555
-179.3
3.32
73.5
0.083
34.8
0.382
-40.7
1500
0.572
168.6
2.73
63.6
0.090
35.3
0.367
-44.7
1800
0.591
157.8
2.34
55.0
0.098
36.3
0.356
-50.2
2000
0.613
151.4
2.14
49.1
0.104
36.3
0.352
-54.5
2200
0.631
144.3
1.98
43.5
0.110
36.3
0.349
-58.4
2500
0.649
135.2
1.77
35.2
0.119
35.8
0.347
-65.3
2800
0.677
126.9
1.60
27.3
0.126
35.7
0.351
-74.6
3000
0.695
122.6
1.50
22.8
0.132
34.9
0.345
-80.8
100
0.687
-54.7
22.73
146.0
0.023
63.5
0.827
-25.9
300
0.551
-119.4
13.13
112.3
0.041
45.2
0.494
-42.9
500
0.520
-148.4
8.68
97.3
0.048
43.8
0.360
-42.5
800
0.519
-171.6
5.70
84.0
0.061
46.1
0.294
-39.8
1000
0.523
178.3
4.66
77.3
0.069
47.2
0.279
-39.7
1200
0.534
170.0
3.95
70.8
0.078
47.5
0.268
-40.9
1500
0.551
159.6
3.22
61.7
0.091
47.3
0.255
-45.3
1800
0.575
151.4
2.74
53.8
0.103
46.2
0.244
-51.4
2000
0.598
146.1
2.50
48.3
0.112
45.6
0.241
-56.3
2200
0.617
140.0
2.31
43.1
0.120
44.6
0.238
-60.4
2500
0.641
132.3
2.06
35.2
0.133
39.4
0.231
-69.9
2800
0.672
125.4
1.84
27.8
0.139
39.1
0.231
-79.7
3000
0.687
121.6
1.73
23.4
0.146
37.9
0.226
-87.0
100
0.606
-68.3
28.45
140.3
0.020
60.8
0.764
-31.7
Document Number 85020
Rev. 1.4, 03-Sep-04
BFP93A / BFP93AW
VISHAY
Vishay Semiconductors
VCE/V
IC/mA
f/MHz
S11
S21
LIN
MAG
ANG
300
0.520
500
800
ANG
-133.8
14.66
0.506
-158.7
0.510
-178.4
1000
0.515
1200
1500
8
8
20
25
30
Document Number 85020
Rev. 1.4, 03-Sep-04
S22
LIN
MAG
ANG
LIN
MAG
ANG
107.5
0.035
47.7
0.408
-47.2
9.43
94.2
6.13
82.1
0.043
49.1
0.289
-44.5
0.057
52.6
0.236
172.5
5.00
-39.7
75.8
0.067
53.5
0.227
-39.2
0.530
165.1
0.550
156.5
4.22
69.8
0.077
53.4
0.219
-40.0
3.43
61.0
0.092
52.2
0.209
1800
0.573
-44.9
148.2
2.91
53.5
0.106
50.0
0.199
2000
-51.5
0.586
143.5
2.65
48.1
0.115
48.9
0.196
-56.8
2200
0.614
137.7
2.44
43.2
0.125
47.7
0.194
-61.1
2500
0.644
131.1
2.19
35.4
0.138
41.1
0.185
-72.6
2800
0.667
124.1
1.95
28.2
0.144
41.0
0.186
-82.7
3000
0.680
120.2
1.84
24.2
0.152
39.5
0.184
-90.8
100
0.558
-79.5
32.26
136.2
0.018
58.5
0.714
-35.7
300
0.509
-143.1
15.46
104.7
0.031
50.3
0.356
-49.4
500
0.502
-165.3
9.81
92.4
0.040
53.3
0.249
-45.3
800
0.511
177.7
6.33
81.0
0.056
56.7
0.205
-39.0
1000
0.517
169.2
5.16
75.1
0.067
57.0
0.199
-38.1
1200
0.527
162.4
4.36
69.1
0.077
56.6
0.193
-39.2
1500
0.546
154.4
3.54
60.7
0.092
55.0
0.184
-44.5
1800
0.568
146.5
2.99
53.1
0.107
52.3
0.175
-51.6
2000
0.591
142.2
2.73
48.1
0.117
50.9
0.173
-57.2
2200
0.610
136.8
2.51
43.0
0.127
49.2
0.170
-61.9
2500
0.639
130.4
2.24
35.5
0.140
42.4
0.163
-74.8
2800
0.665
123.2
2.01
28.5
0.147
42.1
0.164
-85.2
3000
0.684
119.9
1.89
24.5
0.154
40.5
0.162
-94.3
100
0.525
-88.2
34.79
133.1
0.017
58.0
0.676
-38.5
300
0.505
-148.9
15.91
102.8
0.029
52.5
0.322
-50.8
500
0.503
-168.8
10.01
91.2
0.039
56.3
0.224
-45.2
800
0.511
175.1
6.43
80.2
0.055
59.3
0.187
-37.0
1000
0.518
167.2
5.24
74.3
0.066
59.5
0.183
-36.9
1200
0.528
161.0
4.42
68.6
0.078
58.4
0.178
-38.2
1500
0.548
153.2
3.59
60.3
0.093
56.3
0.170
-43.7
1800
0.571
145.9
3.03
52.9
0.108
53.6
0.161
-51.2
2000
0.585
141.5
2.76
47.8
0.118
51.8
0.159
-57.3
2200
0.613
136.0
2.55
43.1
0.128
50.0
0.157
-62.1
2500
0.642
129.6
2.27
35.3
0.141
43.4
0.150
-75.7
2800
0.669
122.7
2.04
28.5
0.148
42.7
0.151
-86.7
3000
0.683
119.4
1.91
24.2
0.156
40.9
0.151
-96.2
100
0.507
-95.1
36.47
130.8
0.016
57.9
0.644
-46.6
deg
8
S12
LIN
MAG
deg
deg
deg
www.vishay.com
5
BFP93A / BFP93AW
VISHAY
Vishay Semiconductors
VCE/V
IC/mA
f/MHz
S11
S21
LIN
MAG
ANG
300
0.506
500
800
S12
LIN
MAG
ANG
-153.1
16.13
0.506
-171.5
0.515
173.2
1000
0.523
1200
S22
LIN
MAG
ANG
LIN
MAG
ANG
101.4
0.027
54.4
0.299
-51.2
10.10
90.4
6.48
79.6
0.036
58.7
0.208
-44.5
0.055
61.1
0.176
166.1
5.28
-36.7
74.0
0.066
60.9
0.173
0.531
159.9
-35.7
4.45
68.2
0.077
60.0
0.169
1500
0.551
-37.0
152.4
3.60
59.9
0.093
57.4
0.162
1800
-42.7
0.574
145.2
3.05
52.7
0.108
54.4
0.154
-50.8
2000
0.585
141.0
2.76
47.4
0.119
52.6
0.152
-56.9
2200
0.613
135.7
2.57
42.8
0.128
50.8
0.150
-62.0
2500
0.644
129.2
2.28
35.1
0.141
43.9
0.143
-76.2
2800
0.669
122.8
2.04
28.5
0.149
43.2
0.145
-87.6
3000
0.685
119.2
1.91
24.2
0.156
41.4
0.144
-97.7
deg
deg
deg
deg
Ccb – Collector Base Capacitance ( pF )
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Ptot -Total Power Dissipation ( mW )
300
250
200
150
100
50
0
0
20
40
60
80
0.4
0.2
f = 1 MHz
0.0
0
4
8
12
16
20
V CB – Collector Base Voltage ( V )
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
7000
4
6000
F – Noise Figure ( dB )
f T – Transition Frequency ( MHz )
0.6
12881
Figure 1. Total Power Dissipation vs. Ambient Temperature
5000
4000
3000
2000
V CE = 5 V
f = 500 MHz
1000
0
3
2
1
V CE = 8 V
f = 800 MHz
ZS = 50
0
0
12880
10
20
30
40
I C – Collector Current ( mA )
50
Figure 2. Transition Frequency vs. Collector Current
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6
0.8
100 120 140 160
Tamb - Ambient Temperature ( °C )
96 12159
1.0
0
12882
5
10
15
20
I C – Collector Current ( mA )
25
Figure 4. Noise Figure vs. Collector Current
Document Number 85020
Rev. 1.4, 03-Sep-04
BFP93A / BFP93AW
VISHAY
Vishay Semiconductors
VCE = 8 V, IC = 30 mA, Z0 = 50 Ω
S11
S21
j
0.1 120 °
j0.5
1.0
0.2
30 °
1.0
0.5
1
2
180 °
∞
ı
5
0.3
–j0.2
0.3
150 °
j5
2.0
0
60 °
j2
3.0 GHz
j0.2
90 °
–j5
–j2
12992
Figure 5. Input Reflection Coefficient
S12
0°
–30 °
–120 °
–j
12990
24
–150 °
0.1
–j0.5
3.0 GHz 12
–90 °
–60 °
Figure 7. Forward Transmission Coefficient
S22
120 °
90 °
150 °
j
60 °
2.0
j0.5
3.0 GHz 30 °
j0.2
1.0
0.1
180 °
0.08
0.16
j2
0
0°
j5
0.2
0.5
1 1.0 2
3.0 GHz
0.3
–j0.2
–150 °
5
0.1
ı
∞
–j5
–30 °
–120 °
12991
–90 °
Figure 6. Reverse Transmission Coefficient
Document Number 85020
Rev. 1.4, 03-Sep-04
–j2
–j0.5
–60°
12993
–j
Figure 8. Output Reflection Coefficient
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7
BFP93A / BFP93AW
VISHAY
Vishay Semiconductors
Package Dimensions in mm
0.50(0.020)
0.35 (0.014)
1.1 (0.043)
0.9 (0.035)
0.15 (0.006)
0.08 (0.003)
1.4 (0.055)
1.2 (0.047)
2.6 (0.101)
2.4 (0.094)
0.9 (0.035)
0.75 (0.029)
3.0 (0.117)
2.8 (0.109)
0...0.1 (0...0.004)
Mounting Pad Layout
1.8 (0.070)
1.6 (0.062)
0.65 (0.025)
1.17 (0.046)
2.0 (0.078)
1.8 (0.070)
ISO Method E
96 12240
Package Dimensions in mm
96 12237
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8
Document Number 85020
Rev. 1.4, 03-Sep-04
BFP93A / BFP93AW
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85020
Rev. 1.4, 03-Sep-04
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9