Infineon BFS481 Npn silicon rf transistor Datasheet

BFS481
NPN Silicon RF Transistor*
• For low noise, high-gain broadband amplifiers at
4
5
6
collector currents from 0.5 mA to 12 mA
• fT = 8 GHz, F = 0.9 dB at 900 MHz
1
2
3
• Two (galvanic) internal isolated
Transistors in one package
• For orientation in reel see
package information below
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
* Short term description
C1
E2
B2
6
5
4
TR2
TR1
1
2
3
B1
E1
C2
EHA07196
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS481
1Pb-containing
Marking
RFs
1=B
Pin Configuration
2=E
3=C
4=B
5=E
Package
6=C
SOT363
package may be available upon special request
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BFS481
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
20
Base current
IB
2
Total power dissipation1)
Ptot
175
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
T stg
-65 ... 150
V
mA
TS ≤ 83 °C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point 2)
RthJS
≤ 380
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
70
100
140
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, I E = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain-
-
IC = 5 mA, VCE = 8 V, pulse measured
1T
S is measured on the collector lead at the soldering point to the pcb
2For
calculation of RthJA please refer to Application Note Thermal Resistance
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BFS481
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
6
8
-
Ccb
-
0.23
0.4
Cce
-
0.13
-
Ceb
-
0.4
-
GHz
IC = 10 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Noise figure
dB
F
IC = 2 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
-
0.9
-
-
1.2
-
G ms
-
20
-
dB
G ma
-
15
-
dB
IC = 2 mA, VCE = 8 V, ZS = ZSopt,
f = 1.8 GHz
Power gain, maximum stable1)
IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
Power gain, maximum available2)
IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
|S21e|2
Transducer gain
dB
IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
-
16
-
-
11
-
IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 MHz
1G
ms = |S 21 / S 12|
1/2
ma = |S 21e / S12e| (k-(k²-1) )
2G
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BFS481
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(t p)
10 3
200
mW
160
K/W
RthJS
Ptot
140
120
10 2
100
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
80
60
40
20
0
0
20
40
60
80
100
120 °C
10 1 -7
10
150
TS
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
tp
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
Ptotmax /PtotDC
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
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0
Package SOT363
BFS481
Package Outline
2 ±0.2
0.9 ±0.1
+0.1
6x
0.2 -0.05
0.1
0.1 MAX.
M
0.1
Pin 1
marking
1
2
3
A
1.25 ±0.1
4
0.1 MIN.
5
2.1 ±0.1
6
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
Foot Print
1.6
0.9 0.7
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
0.2
2.3
8
4
Pin 1
marking
1.1
2.15
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BFS481
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-26
6
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