Transistor 2SB1209 Silicon PNP triple diffusion planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 ■ Absolute Maximum Ratings * (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –400 V Collector to emitter voltage VCEO –400 V Emitter to base voltage VEBO –5 V Peak collector current ICP –200 mA Collector current IC –100 mA Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter 1.0 4.1±0.2 0.55±0.1 Parameter 1cm2 4.5±0.1 2.4±0.2 2.0±0.2 3.5±0.1 0. 7 0.85 3 0.45±0.05 2 2.5 1:Base 2:Collector 3:Emitter 1 1.25±0.05 ● High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.5 EIAJ:SC–71 M Type Mold Package or more, and the board (Ta=25˚C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –100µA, IE = 0 –400 V Collector to emitter voltage VCEO IC = –500µA, IB = 0 –400 V Emitter to base voltage VEBO IE = –100µA, IC = 0 –5 V Forward current transfer ratio hFE VCE = –5V, IC = –30mA 40 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA – 0.6 V Base to emitter saturation voltage VBE(sat) IC = –50mA, IB = –5mA –1.5 V Transition frequency fT VCB = –30V, IE = 20mA, f = 200MHz Collector output capacitance Cob VCB = –30V, IE = 0, f = 1MHz 50 MHz 9 pF 1 Transistor 2SB1209 PC — Ta IC — VCE 1.2 1.0 0.8 0.6 0.4 –120 –100 – 0.9mA – 0.8mA – 0.7mA – 0.6mA – 0.5mA –80 –60 – 0.4mA – 0.3mA –40 – 0.2mA 80 100 120 140 160 –2 –10 –3 TC=75˚C 25˚C –25˚C – 0.1 – 0.03 –3 –8 –10 –12 –10 –30 Ta=75˚C 160 25˚C 120 –25˚C 80 40 0 – 0.1 – 0.3 –100 –3 –10 –30 –100 Area of safe operation (ASO) –1000 Collector current IC (A) –300 20 15 10 Single pulse Ta=25˚C ICP t=10ms t=100ms –100 IC t=1s –30 –10 –3 –1 5 – 0.3 0 3 10 – 0.2 30 100 Collector to base voltage VCB (V) – 0.4 – 0.6 – 0.8 –1.0 Base to emitter voltage VBE (V) – 0.1 –1 –3 VCB=–30V TC=25˚C 100 80 60 40 20 0 –1 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 1 0 fT — I E 200 Cob — VCB 25 –6 120 Collector current IC (mA) 30 –25˚C VCE=–5V Forward current transfer ratio hFE –30 –1 –4 240 IC/IB=10 – 0.01 – 0.1 – 0.3 –40 hFE — IC –100 – 0.3 –60 Collector to emitter voltage VCE (V) VCE(sat) — IC –1 –80 0 0 Transition frequency fT (MHz) 60 Ta=75˚C –20 – 0.1mA 0 40 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) IB=–1mA –20 20 25˚C –100 0.2 0 Collector output capacitance Cob (pF) VCE=–5V Ta=25˚C Collector current IC (mA) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.4 0 2 IC — VBE –120 Collector current IC (mA) Collector power dissipation PC (W) 1.6 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) 1 3 10 30 100 300 Emitter current IE (mA) 1000