PANASONIC MA2C856

Band Switching Diodes
MA2C856
Silicon epitaxial planar type
Unit : mm
For band switching
φ 0.45 max.
Symbol
Rating
Unit
Reverse voltage (DC)
VR
35
V
Forward current (DC)
IF
100
mA
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−55 to +100
°C
2.2 ± 0.3
13 min.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
13 min.
1
0.2 max.
• Extra-small DHD envelope, allowing to insert into a 5 mm pitch
hole
• Less voltage dependence of the terminal capacitance Ct
• Low forward dynamic resistance rf
• Optimum for a band switching of a tuner
COLORED BAND
INDICATES
CATHODE
0.2 max.
■ Features
2
φ 1.75 max.
1 : Cathode
2 : Anode
JEDEC : DO-34
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
(DC)*
IR
VR = 33 V
Forward voltage (DC)
VF
IF = 100 mA
Terminal capacitance
Ct
VR = 15 V, f = 1 MHz
Forward dynamic resistance
rf
IF = 3 mA, f = 100 MHz
Reverse current
Min
Typ
Max
Unit
100
nA
1
V
2
pF
0.85
Ω
Note) 1．Rated input/output frequency: 100 MHz
2．* : Measurement with the beam shielded
■ Cathode Indication
Type No.
MA2C856
Color
Yellow
1
MA2C856
Band Switching Diodes
IF  V F
103
Ta = 125°C
1
10−1
75°C
10
1
25°C
Ta = 125°C
0
0.2
0.6
10−2
0.8
1.0
10−2
0
10
20
rf  f
0.8
0.4
100
300
1 000
Frequency f (MHz)
Terminal capacitance Ct (pF)
f = 1 MHz
Ta = 25°C
2.4
1.6
0.8
0
10
20
30
Reverse voltage VR (V)
2
0
40
80
40
2.0
IF = 3 mA
Ta = 25°C
6
4
2
0
1
3
10
30
120
160
Ambient temperature Ta (°C)
rf  IF
100
300
Frequency f (MHz)
Ct  VR
3.2
50
Forward dynamic resistance rf (Ω)
Forward dynamic resistance rf (Ω)
Forward dynamic resistance rf (Ω)
1.2
30
40
rf  f
8
IF = 3 mA
Ta = 25°C
0
10
30
Reverse voltage VR (V)
Forward voltage VF (V)
1.6
10 V
1
25°C
− 20°C
0.4
VR = 25 V
10
10−1
10−1
75°C
0
102
Reverse current IR (nA)
Reverse current IR (nA)
Forward current IF (mA)
102
10
10−2
IR  T a
IR  V R
103
102
1 000
f = 100 MHz
Ta = 25°C
1.5
1.0
0.5
0
10−1
1
10
Forward current IF (mA)
102