Schottky Barrier Diodes (SBD) MA2C723 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification φ 0.45 max. COLORED BAND INDICATES CATHODE 0.2 max. ■ Features ■ Absolute Maximum Ratings Ta = 25°C 13 min. 0.2 max. 2.2 ± 0.3 • Allowing to rectify under (IF(AV) = 200 mA) condition • Sealed in DO-34 (DHD) package • Allowing high-density mounting (5 mm pitch insertion) • High reliability Parameter 13 min. 1 2 Symbol Rating Unit Reverse voltage (DC) VR 30 V Non-repetitive peak forward surge current* IFSM 1.5 A Peak forward current IFM 300 mA Forward current (DC) IF(AV) 200 mA φ 1.75 max. 1 : Casthode 2 : Anode JEDEC : DO-34 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 50 µA 0.55 V Reverse current (DC) IR VR = 30 V Forward voltage (DC) VF IF = 200 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 30 pF Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3.0 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 1 000 MHz ■ Cathode Indication 3. * : trr measuring instrument Color band in pink Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2C723 Schottky Barrier Diodes (SBD) IF V F IR VR VF Ta 103 104 0.6 75°C 25°C Forward voltage VF (V) Forward current IF (mA) Ta = 125°C − 20°C 10 1 10−1 IF = 200 mA 0.4 100 mA 0.3 0.2 Ta = 125°C 103 Reverse current IR (µA) 0.5 102 102 75°C 10 25°C 1 0.1 1 mA 10−2 0 0.2 0.4 0.6 0 −40 0.8 Forward voltage VF (V) 10−1 0 160 200 VR = 30 V 103 20 10 15 V 5V 102 10 1 0 5 10 15 20 25 Reverse voltage VR (V) 30 10−1 −40 0 40 80 120 160 Ambient temperature Ta (°C) 0 5 10 15 20 25 Reverse voltage VR (V) IR T a Reverse current IR (µA) Terminal capacitance Ct (pF) 120 104 f = 1 MHz Ta = 25°C 30 0 2 80 Ambient temperature Ta (°C) Ct VR 40 40 200 30