ETC EVB71102

EVB71102
315/433MHz Receiver
Evaluation Board Description
Features
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Double superhet architecture for high degree of image rejection
FSK for digital data and FM reception for analog signal transmission
FM/FSK demodulation with phase-coincidence demodulator
Low current consumption in active mode and very low standby current
Switchable LNA gain for improved dynamic range
RSSI allows signal strength indication and ASK detection
Ordering Information
Part No.
EVB71102-433-FSK
EVB71102-433-FM
EVB71102-433-ASK
EVB71102-315-FSK
EVB71102-315-FM
EVB71102-315-ASK
Applications
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General digital and analog 315 MHz or 433 MHz ISM band usage
Low-power telemetry
Alarm and security systems
Keyless car and central locking
Pagers
Technical Data Overview
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Input frequency range: 300 MHz to 450 MHz
Power supply range: 2.5 V to 5.5 V
Temperature range: -40 °C to +85 °C
Operating current: 6.5 mA at low gain and 8.2 mA at high gain mode
Standby current: < 100 nA
1)
with 40 kHz second IF filter BW (incl. SAW front-end filter loss)
Sensitivity: -111 dBm
2)
Sensitivity: -104 dBm with 150 kHz second IF filter BW (incl. SAW front-end filter loss)
Range of first IF: 10 MHz to 80 MHz
Range of second IF: 455 kHz to 21.4 MHz
Maximum input level: –10 dBm at ASK and 0 dBm at FSK
Input impedance: 50 Ω
nd
Image rejection: > 65 dB (e.g. with SAW front-end filter and at 10.7 MHz 2 IF)
Spurious emission: < -70 dBm
Input frequency acceptance: ±50 kHz (with AFC option)
RSSI range: 70 dB
Frequency deviation range: ±5 kHz to ±120 kHz
Maximum data rate: 80 kbit/s NRZ
Maximum analog modulation frequency: 15 kHz
1)
2)
at ± 8 kHz FSK deviation, BER = 3⋅10 and phase-coincidence demodulation
-3
at ± 50 kHz FSK deviation, BER = 3⋅10 and phase-coincidence demodulation
390127110201
Rev. 004
-3
1 of 16
EVB Description
Aug/02
EVB71102
315/433MHz Receiver
Evaluation Board Description
General Description
The TH71102 receiver IC consists of the following building blocks:
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PLL synthesizer (PLL SYNTH) for generation of the first and second local oscillator signals LO1 and LO2
Parts of the PLL SYNTH are the high-frequency VCO1, the feedback dividers DIV_8 and DIV_2,
a phase-frequency detector (PFD) with charge pump (CP) and a crystal-based reference oscillator (RO)
Low-noise amplifier (LNA) for high-sensitivity RF signal reception
First mixer (MIX1) for down-conversion of the RF signal to the first IF (IF1)
second mixer (MIX2) for down-conversion of the IF1 to the second IF (IF2)
IF amplifier (IFA) to amplify and limit the IF2 signal and for RSSI generation
Phase coincidence demodulator (DEMOD) with third mixer (MIX3) to demodulate the IF signal
Operational amplifier (OA) for data slicing, filtering and ASK detection
Bias circuitry for bandgap biasing and circuit shutdown
With the TH71102 receiver chip, various circuit configurations can be arranged in order to meet a number of
different customer requirements. For FM/FSK reception the IF tank used in the phase coincidence demodulator can be constituted either by a ceramic resonator or an LC tank (optionally with a varactor diode to create
an AFC circuit). In ASK configuration, the RSSI signal is feed to an ASK detector, which is constituted by the
operational amplifier.
Demodulation
Type of receiver
FM / FSK
narrow-band RX with ceramic demodulation tank
FM / FSK
wide-band RX with LC demodulation tank
ASK
RX with RSSI-based demodulation
The superheterodyne configuration is double conversion where MIX1 and MIX2 are driven by the internal
local oscillator signals LO1 and LO2, respectively. This allows a high degree of image rejection, achieved in
conjunction with an RF frontend filter. Efficient RF frontend filtering is realized by using a SAW, ceramic or
helix filter in front of the LNA and by adding an LC filter at the LNA output.
A single-conversion variant, called TH71101, is also available. Both RXICs have the same die. At the
TH71101 the second mixer MIX2 operates as an amplifier.
390127110201
Rev. 004
2 of 16
EVB Description
Aug/02
EVB71102
315/433MHz Receiver
Evaluation Board Description
18
OUT_OA
19
20
OA
OAN
OAP
24
23
OUTN
OUTP
Block Diagram
17
VCC_BIAS
BIAS
ENRX
28
16
MIX3
IN_DEM
22
VEE_BIAS
15
OUT_IFA
27
14
VCC_PLL
VEE_RO
26
13
FPC2
RO
RO
IFA
21
25
RSSI
12
FBC1
11
PFD
IN_IFA
LF
CP
29
MIX2
8
VCC_MIX
LO2
9
OUT_MIX2
DIV_2
IF2
10
VEE_IF
VCO1
MIX1
5
VEE_MIX
LO1
6
IF1P
DIV_8
IF1
7
IF1N
4
IN_MIX1
VEE_LNA
GAIN_LNA
VCC_LNA
32
LNA
31
1
VEE_LNAC
IN_LNA
2
30
3
OUT_LNA
Fig. 1: TH71102 block diagram
390127110201
Rev. 004
3 of 16
EVB Description
Aug/02
EVB71102
315/433MHz Receiver
Evaluation Board Description
Frequency Planning
Frequency planning is straightforward for single-conversion applications because there is only one IF that
might be chosen, and then the only possible choice is low-side or high-side injection of the LO1 signal (which
is now the one and only LO signal in the receiver).
The receiver’s double-conversion architecture requires careful frequency planning. Besides the desired RF
input signal, there are a number of spurious signals that may cause an undesired response at the output.
Among them are the image of the RF signal (that must be suppressed by the RF front-end filter), spurious
signals injected to the first IF (IF1) and their images which could be mixed down to the same second IF (IF2)
as the desired RF signal (they must be suppressed by the LC filter at IF1 and/or by low-crosstalk design).
By configuring the TH71102 for double conversion and using its internal PLL synthesizer with fixed feedback
divider ratios of N1 = 8 (DIV_8) and N2 = 2 (DIV_2), four types of down-conversion are possible: low-side
injection of LO1 and LO2 (low-low), LO1 low-side and LO2 high-side (low-high), LO1 high-side and LO2
low-side (high-low) or LO1 and LO2 high-side (high-high). The following table summarizes some equations
that are useful to calculate the crystal reference frequency (REF), the first IF (IF1) and the VCO1 or first LO
frequency (LO1), respectively, for a given RF and second IF (IF2).
Injection type
high-high
low-low
high-low
low-high
REF
(RF – IF2)/14
(RF – IF2)/18
(RF + IF2)/14
(RF + IF2)/18
LO1
16•REF
16•REF
16•REF
16•REF
IF1
LO1 – RF
RF – LO1
LO1 – RF
RF – LO1
LO2
2•REF
2•REF
2•REF
2•REF
IF2
LO2 – IF1
IF1 – LO2
IF1 – LO2
LO2 – IF1
The following table depicts generated, desired, possible images and some undesired signals considering the
examples of 315 MHz and 433.6 MHz RF reception at IF2 = 10.7 MHz.
Signal type
RF = 315
MHz
RF = 315
MHz
RF = 315
MHz
RF = 315
MHz
RF =
RF =
RF =
RF =
433.6 MHz 433.6 MHz 433.6 MHz 433.6 MHz
Injection type
high-high
low-low
high-low
low-high
high-high
low-low
high-low
low-high
REF / MHz
21.73571
16.90556
23.26429
18.09444
30.20714
23.49444
31.73571
24.68333
LO1 / MHz
347.77143 270.48889 372.22857
289.51111 483.31429 375.91111 507.77143 394.93333
IF1 / MHz
32.77143
44.51111
57.22857
25.48889
49.71429
57.68889
74.17143
38.66667
LO2 / MHz
43.47143
33.81111
46.52857
36.18889
60.41429
46.98889
63.47143
49.36667
RF image/MHz 380.54286 225.97778 429.45714
264.02222 533.02857 318.22222 581.94286 356.26667
IF1 image/MHz
46.88889
54.17143
23.11111
35.82857
71.11429
36.28889
52.77143
60.06667
The selection of the reference crystal frequency is based on some assumptions. As for example: the first IF
and the image frequencies should not be in a radio band where strong interfering signals might occur
(because they could represent parasitic receiving signals), the LO1 signal should be in the range of 300 MHz
to 430 MHz (because this is the optimum frequency range of the VCO1). Furthermore the first IF should be
as high as possible to achieve highest RF image rejection. The columns in bold depict the selected frequency
plans to receive at 315 MHz and 433.6 MHz, respectively.
For more detailed information, please refer to the latest TH71102 data sheet revision.
390127110201
Rev. 004
4 of 16
EVB Description
Aug/02
L1
VCC
ENRX
C4
IN_LNA
GND
RO
SAWFIL
VCC
VCC
C5
L2
C2
R1
CB2
C3
C1
C_RO
XTAL
25 VEE
CB8
CB1
32 VCC
31 IN_LNA
30 VEE
29 LF
28 ENRX
27 VCC
26 RO
1
OUTP 23
2
GAIN_LNA
C15
C16
1 2
4
C7
C6
3
L3
L4
5
6
L5
C8
7
16
VEE 10
IN_IFA 11
FBC1 12
FBC2 13
VCC 14
OUT_IFA 15
CB5
CB6
CB7
8
C13
VCC
CB3
OUT_MIX2 9
1 2
TH71102
VEE 22
OUT_LNA
C14
RSSI 21
IN_MIX1
1 2
1 2
VEE
1 2
OUTN
GND
24
1 2
OAP 20
OUTP
GND
VEE
OAN 19
IF1P
VCC 17
RSSI
GND
OUT_OA
GND
OUT_OA 18
IF1N
5 of 16
VCC
390127110201
Rev. 004
R2
C9
CB4
CP
GND
VCC
CERFIL
C10
C11
VCC
CERRES
R_Q
L_OPT
C_OPT
C12
1 2
FSK output
EVB71102
315/433MHz Receiver
Evaluation Board Description
Circuit Diagram for FSK Reception
Fig. 2: Circuit diagram for FSK reception
EVB Description
Aug/02
EVB71102
315/433MHz Receiver
Evaluation Board Description
B Top View for FSK Reception
VCC
Evaluation Board
CB6
C_OPT
CERFIL
R2
CP
C9
C8
L3
32
1
24
25
C7
0
C6
0
CB1
L2
OUTP
C3
C2
C14
OUTN
6
7
R1
C_RO
L1
IN_LNA
ENRX
C4
Board size is 44mm x 54mm
6 of 16
RF_input
VCC
RO
1
SAWFIL
5
XTAL
2
TH711xx_ev03_EB_11/00_B
CB2
C5
3
C1
390127110201
Rev. 004
L5
L4
0
C15
CB5
9
8
17
16
TH71102
RSSI
C16
0
CB7
CB4
OUT_OA
CB3
C12
R_Q
CB8
CERRES
C10
C11
L_OPT
C13
TH7111xx
Melexis
Board layout data in Gerber format is available
EVB Description
Aug/02
EVB71102
315/433MHz Receiver
Evaluation Board Description
Board Component Values for FSK
Part
Size
Value
Value
@ 315 MHz
@ 433 MHz
Tolerance
Description
C1
0805
15 pF
15 pF
±10%
crystal series capacitor
C2
0805
NIP
NIP
±10%
optional loop filter capacitor
C3
0805
1 nF
1 nF
±10%
loop filter capacitor
C4
0603
NIP
3.3 pF
±5%
capacitor to match to SAW filter input
C5
0603
NIP
3.3 pF
±5%
capacitor to match to SAW filter output
C6
0603
5.6 pF
4.7 pF
±5%
LNA output tank capacitor
C7
0603
4.7 pF
2.2 pF
±5%
MIX1 input matching capacitor
C8
0603
TBD
27 pF
±5%
IF1 tank capacitor
C9
0805
33 nF
33 nF
±10%
IFA feedback capacitor
C10
0603
1 nF
1 nF
±10%
IFA feedback capacitor
C11
0603
1 nF
1 nF
±10%
IFA feedback capacitor
C12
0603
1.5 pF
1.5 pF
±5%
DEMOD phase-shift capacitor
C13
0603
680 pF
680 pF
±10%
DEMOD coupling capacitor
CP
0805
10 – 12 pF
10 – 12 pF
±5%
CERRES tuning capacitor
C14
0805
10 – 47 pF
10 – 47 pF
±5%
C15
0805
10 – 47 pF
10 – 47 pF
±5%
C16
0603
330 pF
330 pF
±10%
demodulator output low-pass capacitor,
depending on data rate
demodulator output low-pass capacitor,
depending on data rate
RSSI output low-pass capacitor
CB1 to CB5
CB7 to CB8
CB6
0603
330 pF
330 pF
±10%
blocking capacitor for VCC
0805
33 nF
33 nF
±10%
blocking capacitor for VCC
R1
0805
10 kΩ
10 kΩ
±10%
loop filter resistor
R2
0805
CERFIL output matching resistor
0603
390 Ω
33 nH
±5%
L1
390 Ω
56 nH
±5%
inductor to match SAW filter
L2
0603
56 nH
33 nH
±5%
inductor to match SAW filter
L3
0603
22 nH
15 nH
±5%
LNA output tank inductor
L4
0805
TBD
100 nH
±5%
IF1 tank inductor
L5
0805
TBD
±5%
IF1 tank inductor
L_OPT
1006
NIP
100 nH
NIP
±5%
demodulator phase shift inductor, only
required at FSK/FM with LC resonator
C_OPT
3mm
NIP
NIP
±5%
demodulator phase shift capacitor, only
required at FSK/FM with LC resonator
R_Q
0805
NIP
NIP
±5%
C_RO
0805
330 pF
330 pF
±5%
XTAL
HC49
SMD
23.26429 MHz
@ RF = 315 MHz
23.49444 MHz @
RF = 433.6 MHz
±25ppm calibr.
±30ppm temp.
optional lower-Q resistor, only
required at FSK/FM with LC resonator
optional capacitor
to couple external RO signal
fundamental-mode crystal, Cload = 10 pF
to 15pF, C0, max = 7 pF, Rm, max = 50 Ω
SAWFIL
QCC8C
B3555
(f0 = 433.92 MHz)
±100 kHz
B3dB = 860 kHz
±175 kHz
B3dB = 900 kHz
B3551
(f0 = 315.00 MHz)
CERFIL
CERRES
low-loss SAW filter from EPCOS
Leaded
type
SFE10.7MFP
@ BIF2 = 40 kHz
SFE10.7MFP
@ BIF2 = 40 kHz
TBD
SMD
type
SFECV10.7MJS-A
@ BIF2 = 150 kHz
SFECV10.7MJS-A
@ BIF2 = 150 kHz
±40 kHz
SMD type CDACV10.7MG18-A CDACV10.7MG18-A
Murata
Murata
ceramic filter from Murata
ceramic demodulator tank, not required
at FSK/FM with LC resonator
NIP – not in place, may be used optionally
390127110201
Rev. 004
7 of 16
EVB Description
Aug/02
L1
VCC
ENRX
C4
IN_LNA
GND
RO
SAWFIL
VCC
VCC
C5
L2
C2
R1
CB2
C_RO
C3
C1
25 VEE
CB8
CB1
32 VCC
31 IN_LNA
30 VEE
29 LF
28 ENRX
27 VCC
26 RO
1
OUTP 23
2
C14
1 2
4
C7
C6
3
L3
L4
5
6
L5
C8
7
16
VEE 10
IN_IFA 11
FBC1 12
FBC2 13
VCC 14
OUT_IFA 15
CB5
CB6
CB7
8
C13
VCC
CB3
C16
OUT_MIX2 9
1 2
TH71102
VEE 22
OUT_LNA
XTAL
1 2
RSSI 21
IN_MIX1
1 2
1 2
VEE
1 2
R6
C15
OUTN
GND
24
VEE
R5
OAP 20
OUTP
GND
GAIN_LNA
R4
R3
OAN 19
IF1P
VCC 17
RSSI
GND
OUT_OA
GND
OUT_OA 18
IF1N
8 of 16
VCC
390127110201
Rev. 004
R2
C9
CB4
CP
GND
VCC
CERFIL
C10
C11
VCC
CERRES
R_Q
L_OPT
C_OPT
C12
1 2
FM output
EVB71102
315/433MHz Receiver
Evaluation Board Description
Circuit Diagram for FM Reception
Fig. 3: Circuit diagram for FM reception
EVB Description
Aug/02
EVB71102
315/433MHz Receiver
Evaluation Board Description
PCB Top View for FM Reception
VCC
Evaluation Board
CB6
C_OPT
CERFIL
CP
C9
CB5
9
8
C8
32
1
24
25
C15
C6
L3
C5
OUTP
C3
C2
OUTN
7
L1
IN_LNA
ENRX
C4
Board size is 44mm x 54mm
9 of 16
RF_input
VCC
RO
6
R1
C_RO
XTAL
1
SAWFIL
5
C1
2
TH711xx_ev03_EB_11/00_B
CB2
R6
0
CB1
L2
3
390127110201
Rev. 004
L5
L4
C7
RSSI
C16
R5
CB7
CB4
TH71102
R3
C14
R4
OUT_OA
CB3
C12
R2
C13
R_Q
CB8
CERRES
C10
C11
L_OPT
17
16
TH7111xx
Melexis
Board layout data in Gerber format is available
EVB Description
Aug/02
EVB71102
315/433MHz Receiver
Evaluation Board Description
Board Component Values for FM
Part
Size
Value
Value
@ 315 MHz
@ 433 MHz
Tolerance
Description
C1
0805
15 pF
15 pF
±10%
crystal series capacitor
C2
0805
NIP
NIP
±10%
optional loop filter capacitor
C3
0805
1 nF
1 nF
±10%
loop filter capacitor
C4
0603
NIP
3.3 pF
±5%
capacitor to match to SAW filter input
C5
0603
NIP
3.3 pF
±5%
capacitor to match to SAW filter output
C6
0603
5,6 pF
4.7 pF
±5%
LNA output tank capacitor
C7
0603
4.7 pF
2.2 pF
±5%
MIX1 input matching capacitor
C8
0603
TBD
27 pF
±5%
IF1 tank capacitor
C9
0805
33 nF
33 nF
±10%
IFA feedback capacitor
C10
0603
1 nF
1 nF
±10%
IFA feedback capacitor
C11
0603
1 nF
1 nF
±10%
IFA feedback capacitor
C12
0603
1.5 pF
1.5 pF
±5%
DEMOD phase-shift capacitor
C13
0603
680 pF
680 pF
±10%
DEMOD coupling capacitor
CP
0805
10 –12 pF
10 –12 pF
±5%
CERRES tuning capacitor
C14
0805
100 pF
100 pF
±5%
C15
0805
100 pF
100 pF
±5%
C16
0603
330 pF
330 pF
±10%
sallen-key low-pass filter capacitor, to set
cut-off frequency
sallen-key low-pass filter capacitor, to set
cut-off frequency
RSSI output low-pass capacitor
CB1 to CB5
CB7 to CB8
CB6
0603
330 pF
330 pF
±10%
blocking capacitor for VCC
0805
33 nF
33 nF
±10%
blocking capacitor for VCC
R1
0805
10 kΩ
10 kΩ
±10%
loop filter resistor
R2
390 Ω
390 Ω
12 kΩ
12 kΩ
±5%
±5%
CERFIL output matching resistor
R3
0805
0805
R4
0805
6.8 kΩ
6.8 kΩ
±5%
R5
0805
33 kΩ
33 kΩ
±5%
R6
0805
33 kΩ
33 kΩ
±5%
L1
0603
56 nH
33 nH
±5%
sallen-key filter resistor, to set desired
filter characteristic
sallen-key filter resistor, to set desired
filter characteristic
sallen-key filter resistor, to set cut-off
frequency
sallen-key filter resistor, to set cut-off
frequency
inductor to match SAW filter
L2
0603
56 nH
33 nH
±5%
inductor to match SAW filter
L3
0603
TBD
15 nH
±5%
LNA output tank inductor
L4
0805
TBD
100 nH
±5%
IF1 tank inductor
L5
0805
TBD
±5%
IF1 tank inductor
L_OPT
1006
NIP
100 nH
NIP
±5%
demodulator phase shift inductor, only
required at FSK/FM with LC resonator
C_OPT
3mm
NIP
NIP
±5%
demodulator phase shift capacitor, only
required at FSK/FM with LC resonator
R_Q
0805
NIP
NIP
±5%
C_RO
0805
330 pF
330 pF
±5%
optional lower-Q resistor, only
required at FSK/FM with LC resonator
optional capacitor
to couple external RO signal
390127110201
Rev. 004
10 of 16
EVB Description
Aug/02
EVB71102
315/433MHz Receiver
Evaluation Board Description
Part
Size
XTAL
HC49
SMD
SAWFIL
QCC8C
Value
Value
@ 315 MHz
@ 433 MHz
23.26429 MHz
@ RF = 315 MHz
23.49444 MHz @
RF = 433.6 MHz
±25ppm calibr.
±30ppm temp.
fundamental-mode crystal, Cload = 10 pF
to 15pF, C0, max = 7 pF, Rm, max = 50 Ω
B3555
(f0 = 433.92 MHz)
±100 kHz
B3dB = 860 kHz
low-loss SAW filter from EPCOS
CERRES
Description
±175 kHz
B3dB = 900 kHz
B3551
(f0 = 315.00 MHz)
CERFIL
Tolerance
Leaded
type
SFE10.7MFP
@ BIF2 = 40 kHz
SFE10.7MFP
@ BIF2 = 40 kHz
TBD
SMD
type
SFECV10.7MJS-A
@ BIF2 = 150 kHz
SFECV10.7MJS-A
@ BIF2 = 150 kHz
±40 kHz
SMD type CDACV10.7MG18-A CDACV10.7MG18-A
Murata
Murata
ceramic filter from Murata
ceramic demodulator tank, not required
at FSK/FM with LC resonator
NIP – not in place, may be used optionally
Your Notes
390127110201
Rev. 004
11 of 16
EVB Description
Aug/02
L1
VCC
ENRX
C4
IN_LNA
GND
RO
SAWFIL
VCC
VCC
C5
L2
C2
R1
CB2
C3
C1
C_RO
XTAL
25 VEE
CB8
32 VCC
31 IN_LNA
30 VEE
29 LF
28 ENRX
27 VCC
26 RO
1
OUTP 23
2
GAIN_LNA
C13
1 2
R3
4
C7
C6
3
L3
L4
5
6
C12
1 2
TH71102
VEE 22
OUT_LNA
1 2
1 2
RSSI 21
IN_MIX1
1 2
OUTN
GND
24
1 2
VEE
L5
C8
7
16
VCC
CB3
CB6
CB7
8
CB5
OUT_MIX2 9
VEE 10
IN_IFA 11
FBC1 12
FBC2 13
VCC 14
OUT_IFA 15
VCC 17
OUTP
GND
VEE
OAP 20
OUT_OA
GND
OUT_OA 18
IF1N
RSSI
GND
OAN 19
IF1P
12 of 16
VCC
390127110201
Rev. 004
R2
C9
1 2
ASK output
CB4
GND
VCC
CERFIL
C10
C11
VCC
EVB71102
315/433MHz Receiver
Evaluation Board Description
Circuit Diagram for ASK Reception
Fig. 4: Circuit diagram for ASK reception
EVB Description
Aug/02
CB1
EVB71102
315/433MHz Receiver
Evaluation Board Description
PCB Top View for ASK Reception
VCC
Evaluation Board
CB6
CERFIL
C10
C11
TH7111xx
Melexis
Board layout data in Gerber format is available
R2
C9
CB7
CB5
9
17
16
C6
32
1
L3
CB8
C7
L4
RSSI
24
25
C13
L5
C8
TH71102
R3
0
8
C12
CB4
OUT_OA
CB3
0
CB1
CB2
L2
OUTP
C3
C2
3
OUTN
5
C1
6
7
L1
C_RO
C4
IN_LNA
ENRX
RF_input
Board size is 44mm x 54mm
390127110201
Rev. 004
1
R1
VCC
RO
XTAL
2
SAWFIL
TH711xx_ev03_EB_11/00_B
C5
13 of 16
EVB Description
Aug/02
EVB71102
315/433MHz Receiver
Evaluation Board Description
Board Component Values for ASK
Part
Size
Value
Value
@ 315 MHz
@ 433 MHz
Tolerance
Description
C1
0805
TBD
15 pF
±10%
crystal series capacitor
C2
0805
NIP
NIP
±10%
optional loop filter capacitor
C3
0805
1 nF
1 nF
±10%
loop filter capacitor
C4
0603
NIP
3.3 pF
±5%
capacitor to match to SAW filter input
C5
0603
NIP
3.3 pF
±5%
capacitor to match to SAW filter output
C6
0603
5,6 pF
4.7 pF
±5%
LNA output tank capacitor
C7
0603
4.7 pF
2.2 pF
±5%
MIX1 input matching capacitor
C8
0603
TBD
27 pF
±5%
IF1 tank capacitor
C9
0805
33 nF
33 nF
±10%
IFA feedback capacitor
C10
0603
1 nF
1 nF
±10%
IFA feedback capacitor
C11
0603
1 nF
1 nF
±10%
IFA feedback capacitor
C12
0805
1 nF to 10 nF
1 nF to 10 nF
±10%
C13
0603
330 pF
330 pF
±10%
ASK data slicer capacitor, depending on
data rate
RSSI output low-pass capacitor
CB1 to CB5
CB7 to CB8
CB6
0603
330 pF
330 pF
±10%
blocking capacitor for VCC
0805
33 nF
33 nF
±10%
blocking capacitor for VCC
R1
0805
10 kΩ
10 kΩ
±10%
loop filter resistor
R2
0805
0603
390 Ω
100 kΩ
±5%
±5%
CERFIL output matching resistor
R3
390 Ω
100 kΩ
L1
0603
56 nH
33 nH
±5%
ASK data slicer resistor, depending on
data rate
inductor to match SAW filter
L2
0603
56 nH
33 nH
±5%
inductor to match SAW filter
L3
0603
22 nH
15 nH
±5%
LNA output tank inductor
L4
0805
TBD
100 nH
±5%
IF1 tank inductor
L5
0805
TBD
±5%
IF1 tank inductor
C_RO
0805
330 pF
100 nH
330 pF
±5%
XTAL
HC49
SMD
23.26429 MHz
@ RF = 315 MHz
23.49444 MHz @
RF = 433.6 MHz
±25ppm calibr.
±30ppm temp.
optional capacitor
to couple external RO signal
fundamental-mode crystal, Cload = 10 pF
to 15pF, C0, max = 7 pF, Rm, max = 50 Ω
SAWFIL
QCC8C
B3555
(f0 = 433.92 MHz)
±100 kHz
B3dB = 860 kHz
±175 kHz
B3dB = 900 kHz
B3551
(f0 = 315.00 MHz)
CERFIL
low-loss SAW filters from EPCOS
Leaded
type
SFE10.7MFP
@ BIF2 = 40 kHz
SFE10.7MFP
@ BIF2 = 40 kHz
TBD
SMD
type
SFECV10.7MJS-A
@ BIF2 = 150 kHz
SFECV10.7MJS-A
@ BIF2 = 150 kHz
±40 kHz
ceramic filters from Murata
NIP – not in place, may be used optionally
390127110201
Rev. 004
14 of 16
EVB Description
Aug/02
EVB71102
315/433MHz Receiver
Evaluation Board Description
Package Dimensions
D
D1
24
17
16
25
E
e
E1
32
9
1
A
A2
b
8
A1
L
Fig. 5: LQFP32
All Dimension in mm, coplanaríty < 0.1mm
E1, D1
A
A1
A2
e
b
min
0.05
1.35
0.30
7.00
0.8
max
1.60
0.15
1.45
0.45
All Dimension in inch, coplanaríty < 0.004”
min
0.002 0.053
0.012
0.276
0.031
max
0.630 0.006 0.057
0.018
390127110201
Rev. 004
15 of 16
L
0.45
E, D
α
0°
9.00
0.75
7°
0.018
0°
0.354
0.030
7°
EVB Description
Aug/02
EVB71102
315/433MHz Receiver
Evaluation Board Description
Disclaimer
Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its
Term of Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the
information set forth herein or regarding the freedom of the described devices from patent infringement.
Melexis reserves the right to change specifications and prices at any time and without notice. Therefore, prior
to designing this product into a system, it is necessary to check with Melexis for current information. This
product is intended for use in normal commercial applications. Applications requiring extended temperature
range, unusual environmental requirements, or high reliability applications, such as military, medical lifesupport or life-sustaining equipment are specifically not recommended without additional processing by
Melexis for each application.
The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be
liable to recipient or any third party for any damages, including but not limited to personal injury, property
damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequential
damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical
data herein. No obligation or liability to recipient or any third party shall arise or flow out of Melexis’ rendering
of technical or other services.
© 2002 Melexis NV. All rights reserved.
For the latest version of this document. Go to our website at
www.melexis.com
Or for additional information contact Melexis Direct:
Europe and Japan:
All other locations:
Phone: +32 1367 0495
E-mail: [email protected]
Phone: +1 603 223 2362
E-mail: [email protected]
QS9000, VDA6.1 and ISO14001 Certified
390127110201
Rev. 004
16 of 16
EVB Description
Aug/02