CYPRESS CY7C1362C

CY7C1360C
CY7C1362C
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
Functional Description[1]
Features
•
•
•
•
•
•
•
•
•
•
•
•
Supports bus operation up to 250 MHz
Available speed grades are 250, 200, and 166 MHz
Registered inputs and outputs for pipelined operation
3.3V core power supply (VDD)
2.5V/3.3V I/O operation (VDDQ)
Fast clock-to-output times
— 2.8 ns (for 250-MHz device)
Provide high-performance 3-1-1-1 access rate
User-selectable burst counter supporting Intel®
Pentium® interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed writes
Asynchronous output enable
Single Cycle Chip Deselect
• Available in lead-free 100-Pin TQFP package, lead-free
and non lead-free 119-Ball BGA package and 165-Ball
FBGA package
• TQFP Available with 3-Chip Enable and 2-Chip Enable
• IEEE 1149.1 JTAG-Compatible Boundary Scan
The CY7C1360C/CY7C1362C SRAM integrates 256K x 36
and 512K x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable (CE1), depth-expansion Chip
Enables (CE2 and CE3[2]), Burst Control inputs (ADSC, ADSP,
and ADV), Write Enables (BWX, and BWE), and Global Write
(GW). Asynchronous inputs include the Output Enable (OE)
and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the Byte Write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1360C/CY7C1362C operates from a +3.3V core
power supply while all outputs may operate with either a +2.5
or +3.3V supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Logic Block Diagram – CY7C1362C (512K x 18)
A0, A1, A
ADDRESS
REGISTER
2
MODE
A[1:0]
BURST Q1
COUNTER AND
LOGIC
CLR
Q0
ADV
CLK
ADSC
ADSP
BWB
DQB,DQPB
WRITE DRIVER
DQB,DQPB
WRITE REGISTER
MEMORY
ARRAY
BWA
SENSE
AMPS
OUTPUT
REGISTERS
DQA,DQPA
WRITE DRIVER
DQA,DQPA
WRITE REGISTER
OUTPUT
BUFFERS
DQs
DQPA
DQPB
E
BWE
GW
CE1
CE2
CE3
ENABLE
REGISTER
INPUT
REGISTERS
PIPELINED
ENABLE
OE
ZZ
SLEEP
CONTROL
Notes:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
2. CE3 is for A version of TQFP (3 Chip Enable option) and 165 FBGA package only. 119 BGA is offered only in 2 Chip Enable.
Cypress Semiconductor Corporation
Document #: 38-05540 Rev. *H
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised September 14, 2006
CY7C1360C
CY7C1362C
.
Logic Block Diagram – CY7C1360C (256K x 36)
A0, A1, A
ADDRESS
REGISTER
2
A[1:0]
MODE
ADV
CLK
Q1
BURST
COUNTER
CLR AND Q0
LOGIC
ADSC
ADSP
BWD
DQD ,DQPD
BYTE
WRITE REGISTER
DQD ,DQPD
BYTE
WRITE DRIVER
BWC
DQC ,DQPC
BYTE
WRITE REGISTER
DQC ,DQPC
BYTE
WRITE DRIVER
DQB ,DQPB
BYTE
WRITE REGISTER
DQB ,DQPB
BYTE
WRITE DRIVER
BWB
BWA
BWE
ZZ
ENABLE
REGISTER
SENSE
AMPS
OUTPUT
REGISTERS
OUTPUT
BUFFERS
E
DQs
DQPA
DQPB
DQPC
DQPD
DQA ,DQPA
BYTE
WRITE DRIVER
DQA ,DQPA
BYTE
WRITE REGISTER
GW
CE1
CE2
CE3
OE
MEMORY
ARRAY
INPUT
REGISTERS
PIPELINED
ENABLE
SLEEP
CONTROL
Selection Guide
250 MHz
200 MHz
166 MHz
Unit
Maximum Access Time
2.8
3.0
3.5
ns
Maximum Operating Current
250
220
180
mA
Maximum CMOS Standby Current
40
40
40
mA
Document #: 38-05540 Rev. *H
Page 2 of 31
CY7C1360C
CY7C1362C
Pin Configurations
NC
NC
NC
VDDQ
VSSQ
NC
NC
DQB
DQB
VSSQ
VDDQ
DQB
DQB
NC
VDD
NC
VSS
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQPB
NC
VSSQ
VDDQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
CY7C1362C
(512K x 18)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
DQPB
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQB
DQB
VSSQ
VDDQ
DQB
DQB
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
DQPA
MODE
A
A
A
A
A1
A0
NC/72M
NC/36M
VSS
VDD
NC/18M
A
A
A
A
A
A
A
A
CY7C1360C
(256K X 36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
NC/72M
NC/36M
VSS
VDD
NC/18M
A
A
A
A
A
A
A
A
DQPC
DQC
DQc
VDDQ
VSSQ
DQC
DQC
DQC
DQC
VSSQ
VDDQ
DQC
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSSQ
DQD
DQD
DQD
DQD
VSSQ
VDDQ
DQD
DQD
DQPD
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A
A
CE1
CE2
NC
NC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
A
A
CE1
CE2
BWD
BWC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-Pin TQFP Pinout (3 Chip Enables) (A Version)
Document #: 38-05540 Rev. *H
A
NC
NC
VDDQ
VSSQ
NC
DQPA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
NC
NC
VSSQ
VDDQ
NC
NC
NC
Page 3 of 31
CY7C1360C
CY7C1362C
Pin Configurations (continued)
NC
NC
NC
VDDQ
VSSQ
NC
NC
DQB
DQB
VSSQ
VDDQ
DQB
DQB
NC
VDD
NC
VSS
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQPB
NC
VSSQ
VDDQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
CY7C1362C
(512K x 18)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
DQPB
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQB
DQB
VSSQ
VDDQ
DQB
DQB
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
DQPA
MODE
A
A
A
A
A1
A0
NC/72M
NC/36M
VSS
VDD
NC/18M
NC
A
A
A
A
A
A
A
CY7C1360C
(256K X 36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
NC/72M
NC/36M
VSS
VDD
NC/18M
NC
A
A
A
A
A
A
A
DQPC
DQC
DQC
VDDQ
VSSQ
DQC
DQC
DQC
DQC
VSSQ
VDDQ
DQC
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSSQ
DQD
DQD
DQD
DQD
VSSQ
VDDQ
DQD
DQD
DQPD
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A
A
CE1
CE2
NC
NC
BWB
BWA
A
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
A
A
CE1
CE2
BWD
BWC
BWB
BWA
A
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-Pin TQFP Pinout (2 Chip Enables) (AJ Version)
Document #: 38-05540 Rev. *H
A
NC
NC
VDDQ
VSSQ
NC
DQPA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
NC
NC
VSSQ
VDDQ
NC
NC
NC
Page 4 of 31
CY7C1360C
CY7C1362C
Pin Configurations (continued)
119-Ball BGA Pinout (2 Chip Enables with JTAG)
CY7C1360C (256K x 36)
1
A
VDDQ
2
A
3
A
B
C
NC/288M
NC/144M
CE2
A
A
A
D
E
DQC
DQC
DQPC
DQC
F
VDDQ
G
H
J
K
4
ADSP
5
A
6
A
7
VDDQ
ADSC
VDD
A
A
A
A
NC/576M
NC/1G
VSS
VSS
NC
CE1
VSS
VSS
DQPB
DQB
DQB
DQB
DQC
VSS
OE
VSS
DQB
VDDQ
DQC
DQC
VDDQ
DQD
DQC
DQC
VDD
DQD
BWC
VSS
NC
VSS
ADV
BWB
VSS
NC
VSS
DQB
DQB
VDD
DQA
DQB
DQB
VDDQ
DQA
L
DQD
DQD
NC
DQA
VDDQ
DQD
BWA
VSS
DQA
M
BWD
VSS
DQA
VDDQ
N
DQD
DQD
VSS
VSS
DQA
DQA
GW
VDD
CLK
BWE
A1
P
DQD
DQPD
VSS
A0
VSS
DQPA
DQA
R
NC
A
MODE
VDD
NC
A
NC
T
U
NC
VDDQ
NC/72M
TMS
A
TDI
A
TCK
A
TDO
NC/36M
NC
ZZ
VDDQ
6
7
CY7C1362C (512K x 18)
1
2
3
4
5
A
VDDQ
A
A
ADSP
A
A
VDDQ
B
NC/288M
CE2
A
A
A
NC/576M
C
NC/144M
A
A
ADSC
VDD
A
A
NC/1G
D
DQB
NC
VSS
NC
VSS
DQPA
NC
E
NC
DQB
VSS
CE1
VSS
NC
DQA
F
VDDQ
NC
VSS
VSS
DQA
VDDQ
G
H
J
NC
DQB
VDDQ
DQB
NC
VDD
BWB
VSS
NC
OE
ADV
GW
VDD
VSS
VSS
NC
NC
DQA
VDD
DQA
NC
VDDQ
K
NC
DQB
VSS
CLK
VSS
NC
DQA
L
M
DQB
VDDQ
NC
DQB
VSS
VSS
NC
DQA
NC
NC
VDDQ
N
DQB
NC
VSS
BWE
A1
BWA
VSS
VSS
DQA
NC
P
NC
DQPB
VSS
A0
VSS
NC
DQA
R
T
U
NC
NC/72M
VDDQ
A
A
TMS
MODE
A
TDI
VDD
NC/36M
TCK
NC
A
TDO
A
A
NC
NC
ZZ
VDDQ
Document #: 38-05540 Rev. *H
Page 5 of 31
CY7C1360C
CY7C1362C
Pin Configurations (continued)
165-Ball FBGA Pinout (3 Chip Enable with JTAG)
CY7C1360C (256K x 36)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/288M
R
2
3
4
5
6
7
8
9
10
11
NC
CE1
BWC
BWB
CE3
BWE
ADSC
ADV
A
NC/144M
A
CE2
BWD
BWA
CLK
GW
OE
ADSP
A
DQPC
DQC
NC
DQC
VDDQ
VSS
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDDQ
VDDQ
VDDQ
NC/1G
DQB
DQPB
DQB
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
DQC
DQC
NC
DQD
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
DQB
VDDQ
NC
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
NC
VDDQ
DQB
DQC
VSS
DQD
DQB
NC
DQA
DQB
ZZ
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQPD
DQD
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
NC/18M
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
DQA
DQPA
NC
NC/72M
A
A
TDI
A1
TDO
A
A
A
A
MODE
NC/36M
A
A
TMS
TCK
A
A
A
A
11
A
A0
NC/576M
CY7C1362C (512K x 18)
1
2
3
4
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/288M
A
A
CE1
CE2
BWB
NC/144M
NC
NC
NC
NC
DQB
VDDQ
VDDQ
VSS
VDD
NC
DQB
VDDQ
NC
NC
NC
DQB
DQB
DQB
VSS
NC
R
5
6
7
8
9
10
NC
CE3
CLK
BWE
GW
ADSC
OE
ADV
ADSP
A
BWA
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDDQ
VDDQ
NC/1G
NC
DQPA
DQA
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
VDDQ
VDDQ
NC
VDDQ
VDD
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
NC
VDDQ
NC
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
NC
NC
DQA
DQA
DQA
ZZ
NC
A
NC/576M
A
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
DQB
DQPB
NC
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
NC/18M
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
NC
NC
NC
NC/72M
A
A
TDI
A1
TDO
A
A
A
A
MODE
NC/36M
A
A
TMS
A0
TCK
A
A
A
A
Document #: 38-05540 Rev. *H
Page 6 of 31
CY7C1360C
CY7C1362C
Pin Definitions
Name
I/O
Description
A0, A1, A
InputSynchronous
Address Inputs used to select one of the address locations. Sampled at the rising edge of
the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3[2]are sampled active. A1, A0
are fed to the two-bit counter..
BWA, BWB
BWC, BWD
InputSynchronous
Byte Write Select Inputs, active LOW. Qualified with BWE to conduct Byte Writes to the
SRAM. Sampled on the rising edge of CLK.
GW
InputSynchronous
Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a
global Write is conducted (ALL bytes are written, regardless of the values on BWX and BWE).
BWE
InputSynchronous
Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must
be asserted LOW to conduct a Byte Write.
CLK
InputClock
Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the
burst counter when ADV is asserted LOW, during a burst operation.
CE1
InputSynchronous
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction
with CE2 and CE3[2] to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is
sampled only when a new external address is loaded.
CE2
InputSynchronous
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction
with CE1 and CE3[2] to select/deselect the device. CE2 is sampled only when a new external
address is loaded.
CE3[2]
InputSynchronous
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction
with CE1 and CE2 to select/deselect the device. Not available for AJ package version. Not
connected for BGA. Where referenced, CE3[2] is assumed active throughout this document for
BGA. CE3 is sampled only when a new external address is loaded.
OE
InputAsynchronous
Output Enable, asynchronous input, active LOW. Controls the direction of the I/O pins.
When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated,
and act as input data pins. OE is masked during the first clock of a read cycle when emerging
from a deselected state.
ADV
InputSynchronous
Advance Input signal, sampled on the rising edge of CLK, active LOW. When asserted, it
automatically increments the address in a burst cycle.
ADSP
InputSynchronous
Address Strobe from Processor, sampled on the rising edge of CLK, active LOW. When
asserted LOW, addresses presented to the device are captured in the address registers. A1,
A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP
is recognized. ASDP is ignored when CE1 is deasserted HIGH.
ADSC
InputSynchronous
Address Strobe from Controller, sampled on the rising edge of CLK, active LOW. When
asserted LOW, addresses presented to the device are captured in the address registers. A1,
A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP
is recognized.
ZZ
InputAsynchronous
ZZ “Sleep” Input, active HIGH. When asserted HIGH places the device in a non-time-critical
“sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or
left floating. ZZ pin has an internal pull-down.
DQs, DQPX
I/OSynchronous
Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered
by the rising edge of CLK. As outputs, they deliver the data contained in the memory location
specified by the addresses presented during the previous clock rise of the read cycle. The
direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs.
When HIGH, DQs and DQPX are placed in a tri-state condition.
VDD
Power Supply
Power supply inputs to the core of the device.
VSS
VSSQ
VDDQ
MODE
TDO
Ground
I/O Ground
Ground for the core of the device.
Ground for the I/O circuitry.
I/O Power Supply Power supply for the I/O circuitry.
InputStatic
JTAG serial
output
Synchronous
Document #: 38-05540 Rev. *H
Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or
left floating selects interleaved burst sequence. This is a strap pin and should remain static
during device operation. Mode pin has an internal pull-up.
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG
feature is not being utilized, this pin should be disconnected. This pin is not available on TQFP
packages.
Page 7 of 31
CY7C1360C
CY7C1362C
Pin Definitions (continued)
Name
I/O
Description
TDI
JTAG serial input Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is
Synchronous not being utilized, this pin can be disconnected or connected to VDD. This pin is not available
on TQFP packages.
TMS
JTAG serial input Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is
Synchronous not being utilized, this pin can be disconnected or connected to VDD. This pin is not available
on TQFP packages.
TCK
JTAGClock
Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin must be
connected to VSS. This pin is not available on TQFP packages.
NC
–
No Connects. Not internally connected to the die
NC (18,36,
72, 144, 288,
576, 1G)
–
These pins are not connected. They will be used for expansion to the 18M, 36M, 72M, 144M
288M, 576M, and 1G densities.
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (tCO) is 2.8 ns
(250-MHz device).
The CY7C1360C/CY7C1362C supports secondary cache in
systems utilizing either a linear or interleaved burst sequence.
The interleaved burst order supports Pentium and i486™
processors. The linear burst sequence is suited for processors
that utilize a linear burst sequence. The burst order is user
selectable, and is determined by sampling the MODE input.
Accesses can be initiated with either the Processor Address
Strobe (ADSP) or the Controller Address Strobe (ADSC).
Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.
Byte Write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BWX) inputs. A Global Write
Enable (GW) overrides all Byte Write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed Write circuitry.
Three synchronous Chip Selects (CE1, CE2, CE3[2]) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. ADSP is ignored if CE1
is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
CE1, CE2, CE3[2] are all asserted active, and (3) the Write
signals (GW, BWE) are all deasserted HIGH. ADSP is ignored
if CE1 is HIGH. The address presented to the address inputs
(A) is stored into the address advancement logic and the
address register while being presented to the memory array.
The corresponding data is allowed to propagate to the input of
the output registers. At the rising edge of the next clock the
data is allowed to propagate through the output register and
onto the data bus within 2.8 ns (250-MHz device) if OE is
active LOW. The only exception occurs when the SRAM is
emerging from a deselected state to a selected state, its
outputs are always tri-stated during the first cycle of the
Document #: 38-05540 Rev. *H
access. After the first cycle of the access, the outputs are
controlled by the OE signal. Consecutive single Read cycles
are supported. Once the SRAM is deselected at clock rise by
the chip select and either ADSP or ADSC signals, its output
will tri-state immediately.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) CE1, CE2, CE3[2] are all asserted active. The address
presented to A is loaded into the address register and the
address advancement logic while being delivered to the
memory array. The Write signals (GW, BWE, and BWX) and
ADV inputs are ignored during this first cycle.
ADSP-triggered Write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQs inputs is written into the corresponding address location in the memory array. If GW is HIGH,
then the Write operation is controlled by BWE and BWX
signals. The CY7C1360C/CY7C1362C provides Byte Write
capability that is described in the Write Cycle Descriptions
table. Asserting the Byte Write Enable input (BWE) with the
selected Byte Write (BWX) input, will selectively write to only
the desired bytes. Bytes not selected during a Byte Write
operation will remain unaltered. A synchronous self-timed
Write mechanism has been provided to simplify the Write
operations.
Because the CY7C1360C/CY7C1362C is a common I/O
device, the Output Enable (OE) must be deasserted HIGH
before presenting data to the DQs inputs. Doing so will tri-state
the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a Write cycle is detected, regardless
of the state of OE.
Single Write Accesses Initiated by ADSC
ADSC Write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deasserted HIGH, (3) CE1, CE2, CE3[2] are all asserted active,
and (4) the appropriate combination of the Write inputs (GW,
BWE, and BWX) are asserted active to conduct a Write to the
desired byte(s). ADSC-triggered Write accesses require a
single clock cycle to complete. The address presented to A is
loaded into the address register and the address
advancement logic while being delivered to the memory array.
The ADV input is ignored during this cycle. If a global Write is
Page 8 of 31
CY7C1360C
CY7C1362C
conducted, the data presented to the DQs is written into the
corresponding address location in the memory core. If a Byte
Write is conducted, only the selected bytes are written. Bytes
not selected during a Byte Write operation will remain
unaltered. A synchronous self-timed Write mechanism has
been provided to simplify the Write operations.
Because the CY7C1360C/CY7C1362C is a common I/O
device, the Output Enable (OE) must be deasserted HIGH
before presenting data to the DQs inputs. Doing so will tri-state
the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a Write cycle is detected, regardless
of the state of OE.
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE1, CE2, CE3[2], ADSP, and ADSC must
remain inactive for the duration of tZZREC after the ZZ input
returns LOW.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1, A0
00
01
10
11
Burst Sequences
The CY7C1360C/CY7C1362C provides a two-bit wraparound
counter, fed by A1, A0, that implements either an interleaved
or linear burst sequence. The interleaved burst sequence is
designed specifically to support Intel Pentium applications.
The linear burst sequence is designed to support processors
that follow a linear burst sequence. The burst sequence is user
selectable through the MODE input.
Second
Address
A1, A0
01
00
11
10
Third
Address
A1, A0
10
11
00
01
Fourth
Address
A1, A0
11
10
01
00
Linear Burst Address Table (MODE = GND)
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both Read and Write burst operations are supported.
First
Address
A1, A0
00
01
10
11
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
Second
Address
A1, A0
01
10
11
00
Third
Address
A1, A0
10
11
00
01
Fourth
Address
A1, A0
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
IDDZZ
tZZS
tZZREC
tZZI
tRZZI
Description
Sleep mode standby current
Device operation to ZZ
ZZ recovery time
ZZ Active to sleep current
ZZ Inactive to exit sleep current
Test Conditions
ZZ > VDD – 0.2V
ZZ > VDD – 0.2V
ZZ < 0.2V
This parameter is sampled
This parameter is sampled
Min.
Max.
50
2tCYC
2tCYC
2tCYC
0
Unit
mA
ns
ns
ns
ns
Truth Table[3, 4, 5, 6, 7, 8]
Address
Used
CE1
CE2
CE3
Deselect Cycle, Power Down
None
H
X
X
Deselect Cycle, Power Down
None
L
L
X
L
L
X
X
X
X
L-H
Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
L
X
X
X
X
L-H
Tri-State
Deselect Cycle, Power Down
None
L
L
X
L
H
L
X
X
X
L-H
Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
H
L
X
X
X
L-H
Tri-State
Sleep Mode, Power Down
None
X
X
X
H
X
X
X
X
X
X
Tri-State
READ Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L-H
Q
READ Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L-H
Tri-State
WRITE Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L-H
D
Operation
ZZ ADSP ADSC ADV WRITE OE CLK
L
X
L
X
X
X
L-H
DQ
Tri-State
Notes:
3. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
4. WRITE = L when any one or more Byte Write Enable signals and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals, BWE, GW = H.
5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
6. CE1, CE2, and CE3 are available only in the TQFP package. BGA package has only two chip selects CE1 and CE2.
7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the Write cycle to allow the outputs to tri-state. OE is a
don't care for the remainder of the Write cycle.
8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle all data bits are Tri-State when OE
is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document #: 38-05540 Rev. *H
Page 9 of 31
CY7C1360C
CY7C1362C
Truth Table[3, 4, 5, 6, 7, 8] (continued)
Address
Used
CE1
CE2
CE3
READ Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L-H
Q
READ Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L-H
Tri-State
READ Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L-H
Q
READ Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L-H
Tri-State
READ Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L-H
Q
READ Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H
Tri-State
WRITE Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H
D
WRITE Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H
D
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H
Tri-State
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H
Tri-State
WRITE Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
WRITE Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
Operation
ZZ ADSP ADSC ADV WRITE OE CLK
DQ
Partial Truth Table for Read/Write[5, 9]
Function (CY7C1360C)
GW
BWE
BWD
BWC
BWB
BWA
Read
H
H
X
X
X
X
Read
H
L
H
H
H
H
Write Byte A – (DQA and DQPA)
Write Byte B – (DQB and DQPB)
H
L
H
H
H
L
H
L
H
H
L
H
Write Bytes B, A
H
L
H
H
L
L
Write Byte C – (DQC and DQPC)
H
L
H
L
H
H
Write Bytes C, A
H
L
H
L
H
L
Write Bytes C, B
H
L
H
L
L
H
Write Bytes C, B, A
H
L
H
L
L
L
Write Byte D – (DQD and DQPD)
H
L
L
H
H
H
Write Bytes D, A
H
L
L
H
H
L
Write Bytes D, B
H
L
L
H
L
H
Write Bytes D, B, A
H
L
L
H
L
L
Write Bytes D, C
H
L
L
L
H
H
Write Bytes D, C, A
H
L
L
L
H
L
Write Bytes D, C, B
H
L
L
L
L
H
Write All Bytes
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
Note:
9. Table only lists a partial listing of the byte write combinations. Any combination of BWX is valid. Appropriate write will be done based on which byte write is active.
Document #: 38-05540 Rev. *H
Page 10 of 31
CY7C1360C
CY7C1362C
Truth Table for Read/Write[5, 9]
Function (CY7C1362C)
GW
BWE
BWB
BWA
Read
H
H
X
X
Read
H
L
H
H
Write Byte A – (DQA and DQPA)
H
L
H
L
Write Byte B – (DQB and DQPB)
Write Bytes B, A
H
L
L
H
H
L
L
L
Write All Bytes
H
L
L
L
Write All Bytes
L
X
X
X
IEEE 1149.1 Serial Boundary Scan (JTAG)
Test Access Port (TAP)
The CY7C1360C/CY7C1362C incorporates a serial boundary
scan test access port (TAP) in the BGA package only. The
TQFP package does not offer this functionality. This part
operates in accordance with IEEE Standard 1149.1-1900, but
doesn’t have the set of functions required for full 1149.1
compliance. These functions from the IEEE specification are
excluded because their inclusion places an added delay in the
critical speed path of the SRAM. Note the TAP controller
functions in a manner that does not conflict with the operation
of other devices using 1149.1 fully compliant TAPs. The TAP
operates using JEDEC-standard 3.3V or 2.5V I/O logic levels.
The CY7C1360C/CY7C1362C contains a TAP controller,
instruction register, boundary scan register, bypass register,
and ID register.
Test Clock (TCK)
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately
be connected to VDD through a pull-up resistor. TDO should be
left unconnected. Upon power-up, the device will come up in
a reset state which will not interfere with the operation of the
device.TAP Controller State Diagram
The 0/1 next to each state represents the value of TMS at the
1
TEST-LOGIC
RESET
0
RUN-TEST/
IDLE
0
1
SELECT
DR-SCAN
1
SELECT
IR-SCAN
0
1
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this ball unconnected if the TAP is not used. The ball is
pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI ball is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information on loading the instruction register, see TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) of any register.
(See Tap Controller Block Diagram.)
Test Data-Out (TDO)
The TDO output ball is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine. The output changes on the
falling edge of TCK. TDO is connected to the least significant
bit (LSB) of any register. (See Tap Controller State Diagram.)
CAPTURE-IR
0
0
0
SHIFT-IR
1
0
1
EXIT1-DR
1
EXIT1-IR
0
1
0
PAUSE-DR
0
PAUSE-IR
1
0
1
EXIT2-DR
0
EXIT2-IR
1
1
UPDATE-DR
1
Test MODE SELECT (TMS)
0
1
CAPTURE-DR
SHIFT-DR
0
1
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
0
UPDATE-IR
1
0
rising edge of TCK.
Document #: 38-05540 Rev. *H
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CY7C1360C
CY7C1362C
TAP Controller Block Diagram0
Boundary Scan Register
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM.
Bypass Register
2 1 0
TDI
Selection
Circuitry
Instruction Register
31 30 29 . . . 2 1 0
Selection
Circuitry
TDO
Identification Register
x . . . . . 2 1 0
Boundary Scan Register
The boundary scan register is loaded with the contents of the
RAM I/O ring when the TAP controller is in the Capture-DR
state and is then placed between the TDI and TDO balls when
the controller is moved to the Shift-DR state. The EXTEST,
SAMPLE/PRELOAD and SAMPLE Z instructions can be used
to capture the contents of the I/O ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI and the LSB is connected to TDO.
Identification (ID) Register
TCK
TMS
TAP CONTROLLER
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.
Performing a TAP Reset
TAP Instruction Set
A RESET is performed by forcing TMS HIGH (VDD) for five
rising edges of TCK. This RESET does not affect the operation
of the SRAM and may be performed while the SRAM is
operating.
Overview
At power-up, the TAP is reset internally to ensure that TDO
comes up in a High-Z state.
TAP Registers
Registers are connected between the TDI and TDO balls and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction register. Data is serially loaded into the TDI ball
on the rising edge of TCK. Data is output on the TDO ball on
the falling edge of TCK.
Instruction Register
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the
Instruction Codes table. Three of these instructions are listed
as RESERVED and should not be used. The other five instructions are described in detail below.
The TAP controller used in this SRAM is not fully compliant to
the 1149.1 convention because some of the mandatory 1149.1
instructions are not fully implemented.
The TAP controller cannot be used to load address data or
control signals into the SRAM and cannot preload the I/O
buffers. The SRAM does not implement the 1149.1 commands
EXTEST or INTEST or the PRELOAD portion of
SAMPLE/PRELOAD; rather, it performs a capture of the I/O
ring when these instructions are executed.
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO balls as shown in the Tap Controller Block
Diagram. Upon power-up, the instruction register is loaded
with the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO balls.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
When the TAP controller is in the Capture-IR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board-level serial test data path.
EXTEST
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between the
TDI and TDO balls. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
Document #: 38-05540 Rev. *H
EXTEST is a mandatory 1149.1 instruction which is to be
executed whenever the instruction register is loaded with all
0s. EXTEST is not implemented in this SRAM TAP controller,
and therefore this device is not compliant to 1149.1. The TAP
controller does recognize an all-0 instruction.
When an EXTEST instruction is loaded into the instruction
register, the SRAM responds as if a SAMPLE/PRELOAD
instruction has been loaded. There is one difference between
the two instructions. Unlike the SAMPLE/PRELOAD
instruction, EXTEST places the SRAM outputs in a High-Z
state.
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CY7C1360C
CY7C1362C
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture set-up plus
hold times (tCS and tCH). The SRAM clock input might not be
captured correctly if there is no way in a design to stop (or
slow) the clock during a SAMPLE/PRELOAD instruction. If this
is an issue, it is still possible to capture all other signals and
simply ignore the value of the CK and CK captured in the
boundary scan register.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO balls and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state.
The IDCODE instruction is loaded into the instruction register
upon power-up or whenever the TAP controller is given a test
logic reset state.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO pins.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO balls when the TAP
controller is in a Shift-DR state. It also places all SRAM outputs
into a High-Z state.
PRELOAD allows an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells
prior to the selection of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases
can occur concurrently when required—that is, while data
captured is shifted out, the preloaded data can be shifted in.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and output pins is
captured in the boundary scan register.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because
there is a large difference in the clock frequencies, it is
possible that during the Capture-DR state, an input or output
will undergo a transition. The TAP may then try to capture a
signal while in transition (metastable state). This will not harm
the device, but there is no guarantee as to the value that will
be captured. Repeatable results may not be possible.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
1
2
Test Clock
(TCK)
3
t TH
t TMSS
t TMSH
t TDIS
t TDIH
t
TL
4
5
6
t CYC
Test Mode Select
(TMS)
Test Data-In
(TDI)
t TDOV
t TDOX
Test Data-Out
(TDO)
DON’T CARE
Document #: 38-05540 Rev. *H
UNDEFINED
Page 13 of 31
CY7C1360C
CY7C1362C
TAP AC Switching Characteristics Over the Operating Range[10, 11]
Parameter
Description
Min.
Max.
Unit
20
MHz
Clock
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH time
20
ns
tTL
TCK Clock LOW time
20
ns
50
ns
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
ns
0
ns
Set-up Times
tTMSS
TMS Set-up to TCK Clock Rise
5
ns
tTDIS
TDI Set-up to TCK Clock Rise
5
ns
tCS
Capture Set-up to TCK Rise
5
ns
tTMSH
TMS Hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
Hold Times
3.3V TAP AC Test Conditions
2.5V TAP AC Test Conditions
Input pulse levels ................................................ VSS to 3.3V
Input pulse levels................................................. VSS to 2.5V
Input rise and fall times ................................................... 1 ns
Input rise and fall time .....................................................1 ns
Input timing reference levels ...........................................1.5V
Input timing reference levels......................................... 1.25V
Output reference levels...................................................1.5V
Output reference levels ................................................ 1.25V
Test load termination supply voltage...............................1.5V
Test load termination supply voltage ............................ 1.25V
3.3V TAP AC Output Load Equivalent
2.5V TAP AC Output Load Equivalent
1.5V
1.25V
50Ω
50Ω
TDO
TDO
Z O= 50Ω
Z O= 50Ω
20pF
20pF
TAP DC Electrical Characteristics And Operating Conditions
(0°C < TA < +70°C; VDD = 3.3V ±0.165V unless otherwise noted)[12]
Parameter
VOH1
VOH2
VOL1
Description
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Conditions
Min.
Max.
Unit
IOH = –4.0 mA
VDDQ = 3.3V
2.4
V
IOH = –1.0 mA
VDDQ = 2.5V
2.0
V
IOH = –100 µA
VDDQ = 3.3V
2.9
V
VDDQ = 2.5V
2.1
V
IOL = 8.0 mA
VDDQ = 3.3V
0.4
V
IOL = 8.0 mA
VDDQ = 2.5V
0.4
V
Notes:
10. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.
11. Test conditions are specified using the load in TAP AC test Conditions. tR/tF = 1 ns.
12. All voltages referenced to VSS (GND).
Document #: 38-05540 Rev. *H
Page 14 of 31
CY7C1360C
CY7C1362C
TAP DC Electrical Characteristics And Operating Conditions
(0°C < TA < +70°C; VDD = 3.3V ±0.165V unless otherwise noted)[12] (continued)
Parameter
Description
VOL2
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IX
Input Load Current
Conditions
IOL = 100 µA
Min.
VDDQ = 3.3V
VDDQ = 2.5V
Max.
Unit
0.2
V
0.2
V
2.0
VDD + 0.3
V
VDDQ = 2.5V
1.7
VDD + 0.3
V
VDDQ = 3.3V
–0.5
0.7
V
VDDQ = 2.5V
–0.3
0.7
V
–5
5
µA
VDDQ = 3.3V
GND < VIN < VDDQ
Identification Register Definitions
Instruction Field
Revision Number (31:29)
Device Depth (28:24)[13]
CY7C1360C
(256KX36)
CY7C1362C
(512KX18)
000
000
Description
Describes the version number
01011
01011
Device Width (23:18) 119-BGA
101000
101000
Device Width (23:18) 165- FBGA
000000
000000
Defines memory type and architecture
Cypress Device ID (17:12)
100110
010110
Defines width and density
00000110100
00000110100
1
1
Cypress JEDEC ID Code (11:1)
ID Register Presence Indicator (0)
Reserved for Internal Use
Defines memory type and architecture
Allows unique identification of SRAM vendor
Indicates the presence of an ID register
Scan Register Sizes
Register Name
Bit Size (x36)
Bit Size (x18)
Instruction
3
3
Bypass
1
1
ID
32
32
Boundary Scan Order (119-ball BGA package)
71
71
Boundary Scan Order (165-ball FBGA package)
71
71
Identification Codes
Instruction
Code
Description
EXTEST
000
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and
TDO. This operation does not affect SRAM operations.
SAMPLE Z
010
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
Note:
13. Bit #24 is “1” in the Register Definitions for both 2.5V and 3.3V versions of this device.
Document #: 38-05540 Rev. *H
Page 15 of 31
CY7C1360C
CY7C1362C
165-ball FBGA Boundary Scan Order
CY7C1360C (256K x 36)
CY7C1362C (512K x 18)
Bit#
ball ID
Signal
Name
Bit#
ball ID
Signal
Name
Bit#
ball ID
Signal
Name
Bit#
ball ID
Signal
Name
1
B6
CLK
37
R6
A0
1
B6
CLK
37
R6
A0
2
B7
GW
38
P6
A1
2
B7
GW
38
P6
A1
3
A7
BWE
39
R4
A
3
A7
BWE
39
R4
A
4
B8
OE
40
P4
A
4
B8
OE
40
P4
A
5
A8
ADSC
41
R3
A
5
A8
ADSC
41
R3
A
6
B9
ADSP
42
P3
A
6
B9
ADSP
42
P3
A
7
A9
ADV
43
R1
MODE
7
A9
ADV
43
R1
MODE
8
B10
A
44
N1
DQPD
8
B10
A
44
Internal
Internal
9
A10
A
45
L2
DQD
9
A10
A
45
Internal
Internal
10
C11
DQPB
46
K2
DQD
10
A11
A
46
Internal
Internal
11
E10
DQB
47
J2
DQD
11
Internal
Internal
47
Internal
Internal
12
F10
DQB
48
M2
DQD
12
Internal
Internal
48
N1
DQPB
13
G10
DQB
49
M1
DQD
13
Internal
Internal
49
M1
DQB
14
D10
DQB
50
L1
DQD
14
C11
DQPA
50
L1
DQB
15
D11
DQB
51
K1
DQD
15
D11
DQA
51
K1
DQB
16
E11
DQB
52
J1
DQD
16
E11
DQA
52
J1
DQB
17
F11
DQB
53
Internal
Internal
17
F11
DQA
53
Internal
Internal
18
G11
DQB
54
G2
DQC
18
G11
DQA
54
G2
DQB
19
H11
ZZ
55
F2
DQC
19
H11
ZZ
55
F2
DQB
20
J10
DQA
56
E2
DQC
20
J10
DQA
56
E2
DQB
21
K10
DQA
57
D2
DQC
21
K10
DQA
57
D2
DQB
22
L10
DQA
58
G1
DQC
22
L10
DQA
58
Internal
Internal
23
M10
DQA
59
F1
DQC
23
M10
DQA
59
Internal
Internal
24
J11
DQA
60
E1
DQC
24
Internal
Internal
60
Internal
Internal
25
K11
DQA
61
D1
DQC
25
Internal
Internal
61
Internal
Internal
26
L11
DQA
62
C1
DQPC
26
Internal
Internal
62
Internal
Internal
27
M11
DQA
63
B2
A
27
Internal
Internal
63
B2
A
28
N11
DQPA
64
A2
A
28
Internal
Internal
64
A2
A
29
R11
A
65
A3
CE1
29
R11
A
65
A3
CE1
30
R10
A
66
B3
CE2
30
R10
A
66
B3
CE2
31
P10
A
67
B4
BWD
31
P10
A
67
Internal
Internal
32
R9
A
68
A4
BWC
32
R9
A
68
Internal
Internal
33
P9
A
69
A5
BWB
33
P9
A
69
A4
BWB
34
R8
A
70
B5
BWA
34
R8
A
70
B5
BWA
35
P8
A
71
A6
CE3
35
P8
A
71
A6
CE3
36
P11
A
36
P11
A
Document #: 38-05540 Rev. *H
Page 16 of 31
CY7C1360C
CY7C1362C
119-ball BGA Boundary Scan Order
CY7C1360C (256K x 36)
CY7C1362C (512K x 18)
Bit#
ball ID
Signal
Name
Bit#
ball ID
Signal
Name
Bit#
ball ID
Signal
Name
Bit#
ball ID
Signal
Name
1
K4
CLK
37
P4
A0
1
K4
CLK
37
P4
A0
2
H4
GW
38
N4
A1
2
H4
GW
38
N4
A1
3
M4
BWE
39
R6
A
3
M4
BWE
39
R6
A
4
F4
OE
40
T5
A
4
F4
OE
40
T5
A
5
B4
ADSC
41
T3
A
5
B4
ADSC
41
T3
A
6
A4
ADSP
42
R2
A
6
A4
ADSP
42
R2
A
7
G4
ADV
43
R3
MODE
7
G4
ADV
43
R3
MODE
8
C3
A
44
P2
DQPD
8
C3
A
44
Internal
Internal
9
B3
A
45
P1
DQD
9
B3
A
45
Internal
Internal
10
D6
DQPB
46
L2
DQD
10
T2
A
46
Internal
Internal
11
H7
DQB
47
K1
DQD
11
Internal
Internal
47
Internal
Internal
12
G6
DQB
48
N2
DQD
12
Internal
Internal
48
P2
DQPB
13
E6
DQB
49
N1
DQD
13
Internal
Internal
49
N1
DQB
14
D7
DQB
50
M2
DQD
14
D6
DQPA
50
M2
DQB
15
E7
DQB
51
L1
DQD
15
E7
DQA
51
L1
DQB
16
F6
DQB
52
K2
DQD
16
F6
DQA
52
K2
DQB
17
G7
DQB
53
Internal
Internal
17
G7
DQA
53
Internal
Internal
18
H6
DQB
54
H1
DQC
18
H6
DQA
54
H1
DQB
19
T7
ZZ
55
G2
DQC
19
T7
ZZ
55
G2
DQB
20
K7
DQA
56
E2
DQC
20
K7
DQA
56
E2
DQB
21
L6
DQA
57
D1
DQC
21
L6
DQA
57
D1
DQB
22
N6
DQA
58
H2
DQC
22
N6
DQA
58
Internal
Internal
23
P7
DQA
59
G1
DQC
23
P7
DQA
59
Internal
Internal
24
N7
DQA
60
F2
DQC
24
Internal
Internal
60
Internal
Internal
25
M6
DQA
61
E1
DQC
25
Internal
Internal
61
Internal
Internal
26
L7
DQA
62
D2
DQPC
26
Internal
Internal
62
Internal
Internal
27
K6
DQA
63
C2
A
27
Internal
Internal
63
C2
A
28
P6
DQPA
64
A2
A
28
Internal
Internal
64
A2
A
29
T4
A
65
E4
CE1
29
T6
A
65
E4
CE1
30
A3
A
66
B2
CE2
30
A3
A
66
B2
CE2
31
C5
A
67
L3
BWD
31
C5
A
67
Internal
Internal
32
B5
A
68
G3
BWC
32
B5
A
68
Internal
Internal
33
A5
A
69
G5
BWB
33
A5
A
69
G3
BWB
34
C6
A
70
L5
BWA
34
C6
A
70
L5
BWA
35
A6
A
71
Internal
Internal
35
A6
A
71
Internal
Internal
36
B6
A
36
B6
A
Document #: 38-05540 Rev. *H
Page 17 of 31
CY7C1360C
CY7C1362C
Maximum Ratings
DC Input Voltage .................................. –0.5V to VDD + 0.5V
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... > 200 mA
Operating Range
Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V
Ambient
Temperature
Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD
Range
DC Voltage Applied to Outputs
in Tri-State..........................................–0.5V to VDDQ + 0.5V
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
VDD
VDDQ
3.3V –
5%/+10%
2.5V – 5% to
VDD
Electrical Characteristics Over the Operating Range[14, 15]
Parameter
Description
Test Conditions
Min.
VDD
Power Supply Voltage
VDDQ
I/O Supply Voltage
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage[14]
VIL
Input LOW Voltage[14]
IX
Input Leakage Current
except ZZ and MODE
GND ≤ VI ≤ VDDQ
Input Current of MODE
Input = VSS
–30
3.135
3.6
V
3.135
VDD
V
for 2.5V I/O
2.375
2.625
V
for 3.3V I/O, IOH = –4.0 mA
2.4
for 2.5V I/O, IOH = –1.0 mA
2.0
for 3.3V I/O, IOL = 8.0 mA
V
0.4
V
0.4
V
VDD + 0.3V
V
for 2.5V I/O
1.7
VDD + 0.3V
V
for 3.3V I/O
–0.3
0.8
V
for 2.5V I/O
–0.3
0.7
V
–5
5
µA
µA
5
Input = VSS
µA
µA
–5
30
µA
5
µA
4-ns cycle, 250 MHz
250
mA
5-ns cycle, 200 MHz
220
mA
6-ns cycle, 166 MHz
180
mA
4-ns cycle, 250 MHz
130
mA
5-ns cycle, 200 MHz
120
mA
6-ns cycle, 166 MHz
110
mA
VDD = Max, Device Deselected, All speeds
VIN ≤ 0.3V or VIN > VDDQ – 0.3V,
f=0
40
mA
Automatic CE
Power-down
Current—CMOS Inputs
VDD = Max, Device Deselected, or 4-ns cycle, 250 MHz
VIN ≤ 0.3V or VIN > VDDQ – 0.3V 5-ns cycle, 200 MHz
f = fMAX = 1/tCYC
6-ns cycle, 166 MHz
120
mA
110
mA
100
mA
Automatic CE
Power-down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = 0
40
mA
Input = VDD
IOZ
Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled
IDD
VDD Operating Supply
Current
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
Automatic CE
Power-down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC
ISB2
Automatic CE
Power-down
Current—CMOS Inputs
ISB3
ISB4
V
2.0
for 3.3V I/O
Input = VDD
ISB1
Unit
for 3.3V I/O
for 2.5V I/O, IOL = 1.0 mA
Input Current of ZZ
Max.
–5
All Speeds
Notes:
14. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).
15. TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document #: 38-05540 Rev. *H
Page 18 of 31
CY7C1360C
CY7C1362C
Capacitance[16]
Parameter
Description
Test Conditions
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CI/O
Input/Output Capacitance
100 TQFP
Max.
119 BGA
Max.
165 FBGA
Max.
Unit
5
5
5
pF
5
5
5
pF
5
7
7
pF
TA = 25°C, f = 1 MHz,
VDD = 3.3V
VDDQ = 2.5V
Thermal Resistance[16]
Parameter
Description
Test Conditions
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test conditions follow standard test
methods and procedures for
measuring thermal impedance, per
EIA/JESD51.
100 TQFP
Package
119 BGA
Package
165 FBGA
Package
Unit
29.41
34.1
16.8
°C/W
6.13
14.0
3
°C/W
AC Test Loads and Waveforms
3.3V I/O Test Load
R = 317Ω
3.3V
OUTPUT
Z0 = 50Ω
10%
INCLUDING
JIG AND
SCOPE
2.5V I/O Test Load
R = 351Ω
(b)
(c)
10%
(a)
90%
10%
90%
GND
5 pF
VT = 1.25V
ALL INPUT PULSES
VDDQ
OUTPUT
RL = 50Ω
Z0 = 50Ω
≤ 1 ns
≤ 1 ns
R = 1667Ω
2.5V
OUTPUT
90%
10%
90%
GND
5 pF
VT = 1.5V
(a)
ALL INPUT PULSES
VDDQ
OUTPUT
RL = 50Ω
R =1538Ω
INCLUDING
JIG AND
SCOPE
(b)
≤ 1 ns
≤ 1 ns
(c)
Note:
16. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05540 Rev. *H
Page 19 of 31
CY7C1360C
CY7C1362C
Switching Characteristics Over the Operating Range [17, 18]
–250
Parameter
tPOWER
Description
VDD(Typical) to the First Access
Min.
[19]
–200
Max.
Min.
–166
Max.
Min.
Max.
Unit
1
1
1
ms
Clock
tCYC
Clock Cycle Time
4.0
5.0
6.0
ns
tCH
Clock HIGH
1.8
2.0
2.4
ns
tCL
Clock LOW
1.8
2.0
2.4
ns
Output Times
tCO
Data Output Valid after CLK Rise
tDOH
Data Output Hold after CLK Rise
2.8
1.25
tCLZ
[20, 21, 22]
Clock to Low-Z
1.25
tCHZ
Clock to High-Z[20, 21, 22]
1.25
tOEV
OE LOW to Output Valid
tOELZ
tOEHZ
OE LOW to Output
Low-Z[20, 21, 22]
OE HIGH to Output
High-Z[20, 21, 22]
3.0
1.25
1.25
1.25
2.8
1.25
2.8
0
3.5
1.25
3.0
0
2.8
ns
1.25
3.0
ns
3.5
ns
3.5
ns
0
3.0
ns
ns
3.5
ns
Set-up Times
tAS
Address Set-up before CLK Rise
1.4
1.5
1.5
ns
tADS
ADSC, ADSP Set-up before CLK Rise
1.4
1.5
1.5
ns
tADVS
ADV Set-up before CLK Rise
1.4
1.5
1.5
ns
tWES
GW, BWE, BWX Set-up before CLK Rise
1.4
1.5
1.5
ns
tDS
Data Input Set-up before CLK Rise
1.4
1.5
1.5
ns
tCES
Chip Enable Set-up before CLK Rise
1.4
1.5
1.5
ns
tAH
Address Hold after CLK Rise
0.4
0.5
0.5
ns
tADH
ADSP, ADSC Hold after CLK Rise
0.4
0.5
0.5
ns
tADVH
ADV Hold after CLK Rise
0.4
0.5
0.5
ns
Hold Times
tWEH
GW, BWE, BWX Hold after CLK Rise
0.4
0.5
0.5
ns
tDH
Data Input Hold after CLK Rise
0.4
0.5
0.5
ns
tCEH
Chip Enable Hold after CLK Rise
0.4
0.5
0.5
ns
Notes:
17. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V.
18. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
19. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a Read or Write operation
can be initiated.
20. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
21. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
22. This parameter is sampled and not 100% tested.
Document #: 38-05540 Rev. *H
Page 20 of 31
CY7C1360C
CY7C1362C
Switching Waveforms
Read Cycle Timing[23]
t CYC
CLK
t
CH
t
ADS
t
CL
t
ADH
ADSP
tADS
tADH
ADSC
tAS
tAH
A1
ADDRESS
A2
tWES
A3
Burst continued with
new base address
tWEH
GW, BWE,
BWx
tCES
Deselect
cycle
tCEH
CE
tADVS tADVH
ADV
ADV
suspends
burst.
OE
t OEHZ
t CLZ
Data Out (Q)
Q(A1)
High-Z
tOEV
tCO
t OELZ
tDOH
Q(A2)
t CHZ
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
t CO
Burst wraps around
to its initial state
Single READ
BURST READ
DON’T CARE
UNDEFINED
Note:
23. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
Document #: 38-05540 Rev. *H
Page 21 of 31
CY7C1360C
CY7C1362C
Switching Waveforms (continued)
Write Cycle Timing[23, 24]
t CYC
CLK
tCH
tADS
tCL
tADH
ADSP
tADS
ADSC extends burst
tADH
tADS
tADH
ADSC
tAS
tAH
A1
ADDRESS
A2
A3
Byte write signals are
ignored for first cycle when
ADSP initiates burst
tWES tWEH
BWE,
BWX
tWES tWEH
GW
tCES
tCEH
CE
t
t
ADVS ADVH
ADV
ADV suspends burst
OE
tDS
Data In (D)
High-Z
t
OEHZ
tDH
D(A1)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
Data Out (Q)
BURST READ
Single WRITE
BURST WRITE
DON’T CARE
Extended BURST WRITE
UNDEFINED
Note:
24. Full width Write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BWX LOW.
Document #: 38-05540 Rev. *H
Page 22 of 31
CY7C1360C
CY7C1362C
Switching Waveforms (continued)
Read/Write Cycle Timing[23, 25, 26]
tCYC
CLK
tCL
tCH
tADS
tADH
tAS
tAH
ADSP
ADSC
ADDRESS
A1
A2
A3
A4
A5
A6
D(A5)
D(A6)
tWES tWEH
BWE,
BWX
tCES
tCEH
CE
ADV
OE
tDS
tCO
tDH
tOELZ
Data In (D)
High-Z
tCLZ
Data Out (Q)
High-Z
Q(A1)
Back-to-Back READs
tOEHZ
D(A3)
Q(A2)
Q(A4)
Single WRITE
Q(A4+1)
Q(A4+2)
BURST READ
DON’T CARE
Q(A4+3)
Back-to-Back
WRITEs
UNDEFINED
Notes:
25. The data bus (Q) remains in high-Z following a Write cycle, unless a new Read access is initiated by ADSP or ADSC.
26. GW is HIGH.
Document #: 38-05540 Rev. *H
Page 23 of 31
CY7C1360C
CY7C1362C
Switching Waveforms (continued)
ZZ Mode Timing[27, 28]
CLK
t ZZ
ZZ
I
t ZZREC
t ZZI
SUPPLY
I DDZZ
t RZZI
ALL INPUTS
(except ZZ)
Outputs (Q)
DESELECT or READ Only
High-Z
DON’T CARE
Notes:
27. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device.
28. DQs are in High-Z when exiting ZZ sleep mode.
Document #: 38-05540 Rev. *H
Page 24 of 31
CY7C1360C
CY7C1362C
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
166
Ordering Code
CY7C1360C-166AXC
CY7C1362C-166AXC
CY7C1360C-166AJXC
Package
Diagram
Part and Package Type
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
(3 Chip Enable)
CY7C1362C-166AJXC
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
(2 Chip Enable)
CY7C1360C-166BGC
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
Operating
Range
Commercial
CY7C1362C-166BGC
CY7C1360C-166BGXC
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1362C-166BGXC
CY7C1360C-166BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1362C-166BZC
CY7C1360C-166BZXC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1362C-166BZXC
CY7C1360C-166AXI
CY7C1362C-166AXI
CY7C1360C-166AJXI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
(3 Chip Enable)
CY7C1362C-166AJXI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
(2 Chip Enable)
CY7C1360C-166BGI
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
Industrial
CY7C1362C-166BGI
CY7C1360C-166BGXI
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1362C-166BGXI
CY7C1360C-166BZI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1362C-166BZI
CY7C1360C-166BZXI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1362C-166BZXI
Document #: 38-05540 Rev. *H
Page 25 of 31
CY7C1360C
CY7C1362C
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
200
CY7C1360C-200AXC
CY7C1362C-200AXC
CY7C1360C-200AJXC
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
(3 Chip Enable)
CY7C1362C-200AJXC
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
(2 Chip Enable)
CY7C1360C-200BGC
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
Commercial
CY7C1362C-200BGC
CY7C1360C-200BGXC
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1362C-200BGXC
CY7C1360C-200BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1362C-200BZC
CY7C1360C-200BZXC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1362C-200BZXC
CY7C1360C-200AXI
CY7C1362C-200AXI
CY7C1360C-200AJXI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
(3 Chip Enable)
CY7C1362C-200AJXI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
(2 Chip Enable)
CY7C1360C-200BGI
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
Industrial
CY7C1362C-200BGI
CY7C1360C-200BGXI
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1362C-200BGXI
CY7C1360C-200BZI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1362C-200BZI
CY7C1360C-200BZXI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1362C-200BZXI
Document #: 38-05540 Rev. *H
Page 26 of 31
CY7C1360C
CY7C1362C
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
250
CY7C1360C-250AXC
CY7C1362C-250AXC
CY7C1360C-250AJXC
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
(3 Chip Enable)
CY7C1362C-250AJXC
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
(2 Chip Enable)
CY7C1360C-250BGC
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
Commercial
CY7C1362C-250BGC
CY7C1360C-250BGXC
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1362C-250BGXC
CY7C1360C-250BZC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1362C-250BZC
CY7C1360C-250BZXC
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1362C-250BZXC
CY7C1360C-250AXI
CY7C1362C-250AXI
CY7C1360C-250AJXI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
(3 Chip Enable)
CY7C1362C-250AJXI
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
(2 Chip Enable)
CY7C1360C-250BGI
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
Industrial
CY7C1362C-250BGI
CY7C1360C-250BGXI
51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free
CY7C1362C-250BGXI
CY7C1360C-250BZI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1362C-250BZI
CY7C1360C-250BZXI
51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1362C-250BZXI
Document #: 38-05540 Rev. *H
Page 27 of 31
CY7C1360C
CY7C1362C
Package Diagrams
100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) (51-85050)
16.00±0.20
1.40±0.05
14.00±0.10
100
81
80
1
20.00±0.10
22.00±0.20
0.30±0.08
0.65
TYP.
30
12°±1°
(8X)
SEE DETAIL
A
51
31
50
0.20 MAX.
0.10
1.60 MAX.
R 0.08 MIN.
0.20 MAX.
0° MIN.
SEATING PLANE
STAND-OFF
0.05 MIN.
0.15 MAX.
0.25
NOTE:
1. JEDEC STD REF MS-026
GAUGE PLANE
0°-7°
R 0.08 MIN.
0.20 MAX.
2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH
MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE
BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH
3. DIMENSIONS IN MILLIMETERS
0.60±0.15
0.20 MIN.
51-85050-*B
1.00 REF.
DETAIL
Document #: 38-05540 Rev. *H
A
Page 28 of 31
CY7C1360C
CY7C1362C
Package Diagrams (continued)
119-Ball PBGA (14 x 22 x 2.4 mm) (51-85115)
Ø0.05 M C
Ø0.25 M C A B
A1 CORNER
Ø0.75±0.15(119X)
Ø1.00(3X) REF.
1
2
3 4
5
6
7
7
6
5
4 3 2 1
A
A
B
B
C
D
1.27
C
D
E
E
F
F
H
19.50
J
K
L
20.32
G
H
22.00±0.20
G
J
K
L
M
10.16
M
N
P
N
P
R
R
T
T
U
U
1.27
0.70 REF.
A
3.81
7.62
30° TYP.
14.00±0.20
0.15(4X)
0.15 C
2.40 MAX.
B
0.90±0.05
0.25 C
12.00
51-85115-*B
C
Document #: 38-05540 Rev. *H
0.60±0.10
0.56
SEATING PLANE
Page 29 of 31
CY7C1360C
CY7C1362C
Package Diagrams (continued)
165 FBGA 13 x 15 x 1.40 MM BB165D/BW165D
165-Ball FBGA (13 x 15 x 1.4 mm) (51-85180)
BOTTOM VIEW
PIN 1 CORNER
BOTTOM VIEW
TOP VIEW
PIN 1 CORNER
TOP VIEW
Ø0.05 M C
Ø0.25 MØ0.05
CAB MC
PIN 1 CORNER
Ø0.25 M C A B
Ø0.50 -0.06
(165X)
PIN 1 CORNER
1
2
+0.14
4
2
5
3
6
4
7
5
8
6
9
7
10
11
8
9
11
10
11
10
9
11
8
10
7
9
6
8
5
7
Ø0.50 -0.06 (165X)
4
6
1
3 +0.14
2
5
4
3
2
1A
B
A
C
B
C
B
D
C
D
C
E
D
F
1.00
A
1.00
B
F
E
G
F
G
F
H
G
H
G
J
H
K
J
L
K
M
L
N
M
P
N
P
N
R
P
R
P
7.00
7.00
14.00
D
E
14.00
15.00±0.10
E
15.00±0.10
15.00±0.10
A
15.00±0.10
3
1
J
H
K
J
L
K
M
L
N
M
R
R
A
A
A
1.00
5.00
A
1.00
5.00
10.00
10.00
B
B
13.00±0.10
B
13.00±0.10
B
13.00±0.10
13.00±0.10
SEATING PLANE
NOTES :
NOTES
:
SOLDER
PAD TYPE
: NON-SOLDER MASK DEFINED (NSMD)
PACKAGE
WEIGHT
SOLDER
PAD: 0.475g
TYPE : NON-SOLDER MASK DEFINED (NSMD)
JEDEC REFERENCE
: MO-216
/ DESIGN 4.6C
PACKAGE WEIGHT
: 0.475g
PACKAGE
CODE
: BB0AC : MO-216 / DESIGN 4.6C
JEDEC
REFERENCE
PACKAGE CODE : BB0AC
51-85180-*A
0.35±0.06
C
0.35±0.06
0.36
0.36
SEATING PLANE
C
0.15 C
1.40 MAX.
1.40 MAX.
0.15(4X)
0.15 C
0.53±0.05
0.53±0.05
0.25
C
0.25 C
0.15(4X)
51-85180-*A
i486 is a trademark, and Intel and Pentium are registered trademarks of Intel Corporation. PowerPC is a trademark of IBM
Corporation. All product and company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05540 Rev. *H
Page 30 of 31
© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1360C
CY7C1362C
Document History Page
Document Title: CY7C1360C/CY7C1362C 9-Mbit (256K x 36/512K x 18) Pipelined SRAM
Document Number: 38-05540
REV.
ECN NO.
Issue Date
Orig. of
Change
Description of Change
**
241690
See ECN
RKF
New data sheet
*A
278130
See ECN
RKF
Changed Boundary Scan order to match the B rev of these devices
Changed TQFP pkg to Lead-free TQFP in Ordering Information section
Added comment of Lead-free BG and BZ packages availability
*B
248929
See ECN
VBL
Changed ISB1 and ISB3 from DC Characteristics table as follows:
ISB1: 225 MHz -> 130 mA, 200 MHz -> 120 mA, 167 MHz -> 110 mA
ISB3: 225 MHz -> 120 mA, 200 MHz -> 110 mA, 167 MHz -> 100 mA
Changed IDDZZ to 50 mA
Added BG and BZ pkg lead-free part numbers to ordering info section
*C
323636
See ECN
PCI
Changed frequency of 225 MHz into 250 MHz
Added tCYC of 4.0 ns for 250 MHz
Changed ΘJA and ΘJC for TQFP Package from 25 and 9 °C/W to 29.41 and
6.13 °C/W respectively
Changed ΘJA and ΘJC for BGA Package from 25 and 6 °C/W to 34.1 and
14.0 °C/W respectively
Changed ΘJA and ΘJC for FBGA Package from 27 and 6 °C/W to 16.8 and
3.0 °C/W respectively
Modified address expansion as per JEDEC Standard
Removed comment of Lead-free BG and BZ packages availability
*D
332879
See ECN
PCI
Unshaded 200 and 166 MHz speed bins in the AC/DC Table and Selection
Guide
Added Address Expansion pins in the Pin Definition Table
Changed Device Width (23:18) for 119-BGA from 000000 to 101000
Added separate row for 165 -FBGA Device Width (23:18)
Modified VOL, VOH test conditions
Updated Ordering Information Table
*E
357258
See ECN
PCI
Changed from Preliminary to Final
Removed Shading on 250MHz Speed Bin in Selection Guide and AC/DC
Table
Changed ISB2 from 30 to 40 mA
Updated Ordering Information Table
*F
377095
See ECN
PCI
Modified test condition in note# 16 from VDDQ < VDD to VDDQ ≤ VDD
*G
408298
See ECN
RXU
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed three-state to tri-state on page# 9 & page# 10
Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in
the Electrical Characteristics Table
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
*H
501793
See ECN
VKN
Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND
Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP
AC Switching Characteristics table.
Updated the Ordering Information table.
Document #: 38-05540 Rev. *H
Page 31 of 31