CY7C1460AV33 CY7C1462AV33 36-Mbit (1 M × 36/2 M × 18) Pipelined SRAM with NoBL™ Architecture 36-Mbit (1 M × 36/2 M × 18/512 K × 72) Pipelined SRAM with NoBL™ Architecture Features Functional Description ■ Pin compatible and functionally equivalent to ZBT ■ Supports 250 MHz bus operations with zero wait states ❐ Available speed grades are 250, 200 and 167 MHz ■ Internally self timed output buffer control to eliminate the need to use asynchronous OE ■ Fully registered (inputs and outputs) for pipelined operation ■ Byte write capability ■ 3.3 V power supply ■ 3.3 V/2.5 V I/O power supply ■ Fast clock-to-output times ❐ 2.6 ns (for 250 MHz device) ■ Clock enable (CEN) pin to suspend operation ■ Synchronous self timed writes ■ CY7C1460AV33, CY7C1462AV33 available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball FBGA package. ■ IEEE 1149.1 JTAG-compatible boundary scan ■ Burst capability—linear or interleaved burst order ■ “ZZ” sleep mode option and stop clock option The CY7C1460AV33/CY7C1462AV33 are 3.3 V, 1 M × 36/2 M × 18 synchronous pipelined burst SRAMs with No Bus Latency™ (NoBL logic, respectively. They are designed to support unlimited true back-to-back read/write operations with no wait states. The CY7C1460AV33/CY7C1462AV33 are equipped with the advanced (NoBL) logic required to enable consecutive read/write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data in systems that require frequent write/read transitions. The CY7C1460AV33/CY7C1462AV33 are pin compatible and functionally equivalent to ZBT devices. All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The clock input is qualified by the clock enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Write operations are controlled by the byte write selects (BWa–BWd for CY7C1460AV33 and BWa–BWb for CY7C1462AV33) and a write enable (WE) input. All writes are conducted with on-chip synchronous self timed write circuitry. Three synchronous chip enables (CE1, CE2, CE3) and an asynchronous output enable (OE) provide for easy bank selection and output tristate control. To avoid bus contention, the output drivers are synchronously tristated during the data portion of a write sequence. Logic Block Diagram – CY7C1460AV33 (1 M × 36) ADDRESS REGISTER 0 A0, A1, A A1 A1' D1 Q1 A0 A0' BURST D0 Q0 LOGIC MODE CLK CEN ADV/LD C C WRITE ADDRESS REGISTER 1 WRITE ADDRESS REGISTER 2 S E N S E ADV/LD WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC BW a BW b BW c BW d MEMORY ARRAY WRITE DRIVERS A M P S WE O U T P U T R E G I S T E R S E INPUT REGISTER 1 OE CE1 CE2 CE3 S T E E R I N G INPUT REGISTER 0 B U F F E R S DQ s DQ Pa DQ Pb DQ Pc DQ Pd E E READ LOGIC SLEEP CONTROL ZZ Cypress Semiconductor Corporation Document Number: 38-05353 Rev. *I E O U T P U T D A T A • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised March 28, 2011 [+] Feedback CY7C1460AV33 CY7C1462AV33 Logic Block Diagram – CY7C1462AV33 (2 M × 18) A0, A1, A ADDRESS REGISTER 0 A1 A1' D1 Q1 A0 A0' BURST D0 Q0 LOGIC MODE CLK CEN ADV/LD C C WRITE ADDRESS REGISTER 1 WRITE ADDRESS REGISTER 2 S E N S E ADV/LD BW a WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC WRITE DRIVERS MEMORY ARRAY A M P S BW b WE O U T P U T R E G I S T E R S O U T P U T D A T A B U F F E R S S T E E R I N G E INPUT REGISTER 1 OE CE1 CE2 CE3 ZZ Document Number: 38-05353 Rev. *I E DQ s DQ Pa DQ Pb E INPUT REGISTER 0 E READ LOGIC Sleep Control Page 2 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Contents Selection Guide ................................................................ 4 Pin Configurations ........................................................... 4 Pin Definitions .................................................................. 6 Functional Overview ........................................................ 7 Single Read Accesses ................................................ 7 Burst Read Accesses .................................................. 7 Single Write Accesses ................................................. 7 Burst Write Accesses .................................................. 8 Sleep Mode ................................................................. 8 Interleaved Burst Address Table (MODE = Floating or VDD) ............................................. 8 Linear Burst Address Table (MODE = GND) .................. 8 ZZ Mode Electrical Characteristics ................................. 8 Truth Table ........................................................................ 9 Partial Write Cycle Description ..................................... 10 IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 11 Disabling the JTAG Feature ...................................... 11 TAP Controller State Diagram ....................................... 11 Test Access Port (TAP) ............................................. 11 TAP Controller Block Diagram ...................................... 11 PERFORMING A TAP RESET .................................. 11 TAP REGISTERS ...................................................... 11 TAP Instruction Set ................................................... 12 TAP Timing Diagram ...................................................... 13 TAP AC Switching Characteristics ............................... 13 3.3 V TAP AC Test Conditions ....................................... 14 Document Number: 38-05353 Rev. *I 2.5 V TAP AC Test Conditions ....................................... 14 TAP DC Electrical Characteristics and Operating Conditions .................................................. 14 Identification Register Definitions ................................ 14 Scan Register Sizes ....................................................... 15 Identification Codes ....................................................... 15 165-ball FBGA Boundary Scan Order .......................... 16 Maximum Ratings ........................................................... 17 Operating Range ............................................................. 17 Neutron Soft Error Immunity ......................................... 17 Electrical Characteristics ............................................... 17 Capacitance .................................................................... 18 Thermal Resistance ........................................................ 18 Switching Characteristics .............................................. 19 Switching Waveforms .................................................... 20 Ordering Information ...................................................... 22 Ordering Code Definitions ......................................... 22 Package Diagrams .......................................................... 23 Acronyms ........................................................................ 25 Document Conventions ................................................. 25 Units of Measure ....................................................... 25 Document History Page ................................................. 26 Sales, Solutions, and Legal Information ...................... 28 Worldwide Sales and Design Support ....................... 28 Products .................................................................... 28 PSoC Solutions ......................................................... 28 Page 3 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Selection Guide Description Maximum access time Maximum operating current Maximum CMOS standby current 250 MHz 200 MHz 167 MHz Unit 2.6 475 120 3.2 425 120 3.4 375 120 ns mA mA Pin Configurations 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 CY7C1462AV33 (2 M × 18) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A NC NC VDDQ VSS NC DQPa DQa DQa VSS VDDQ DQa DQa VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa NC NC VSS VDDQ NC NC NC A A A A A A A A DQb DQb DQb DQb VSS VDDQ DQb DQb DQb DQb NC VSS VDD NC NC VDD VSS ZZ DQb DQa DQa DQb VDDQ VDDQ VSS VSS DQa DQb DQa DQb DQa DQPb NC DQa VSS VSS VDDQ VDDQ NC DQa DQa NC DQPa NC NC/72M VDDQ VSS NC NC DQb DQb VSS VDDQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 VSS VDD NC NC NC NC/144M A A A A A A A A NC/72M VSS VDD NC/144M NC/288M MODE A A A A A1 A0 Document Number: 38-05353 Rev. *I DQPb DQb DQb VDDQ VSS NC/288M CY7C1460AV33 (1 M × 36) 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 DQc DQc NC VDD NC VSS DQd DQd VDDQ VSS DQd DQd DQd DQd VSS VDDQ DQd DQd DQPd 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 VSS DQc DQc DQc DQc VSS VDDQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODE A A A A A1 A0 DQPc DQc DQc VDDQ A A A A CE1 CE2 NC NC BWb BWa CE3 VDD VSS CLK WE CEN OE ADV/LD A A A A 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 A A CE1 CE2 BWd BWc BWb BWa CE3 VDD VSS CLK WE CEN OE ADV/LD A A Figure 1. 100-pin TQFP Pinout Page 4 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Pin Configurations (continued) Figure 2. 165-ball FBGA (15 × 17 × 1.4 mm) CY7C1460AV33 (1 M × 36) 1 2 3 4 5 6 7 8 A B C D E F G H J K L M N P NC/576M NC/1G A CE1 BWc A CE2 BWb CE3 BWa VSS CEN WE VDDQ BWd VSS VDD CLK DQPc DQc NC DQc VDDQ VSS VSS VSS DQc DQc VDDQ VDD VSS DQc DQc NC DQd DQc VDDQ VDDQ NC VDDQ VDD DQc NC DQd VDD VDD VDD DQd DQd VDDQ DQd DQd DQd DQPd DQd NC R MODE NC/144M NC/72M A 9 10 11 ADV/LD A A NC OE A A NC VSS VSS VSS VDD VDDQ VDDQ NC DQb DQPb DQb VSS VSS VDD VDDQ DQb DQb VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDD VDDQ VDDQ NC VDDQ DQb VSS VSS VSS DQb NC DQa DQb DQb ZZ DQa VDD VSS VSS VSS VDD VDDQ DQa DQa VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa VDDQ VDDQ VDD VSS VSS NC VSS NC VSS NC VDD VSS VDDQ VDDQ DQa NC DQa DQPa A A TDI A1 TDO A A A NC/288M A A TMS A0 TCK A A A A 9 10 11 CY7C1462AV33 (2 M × 18) A B C D E F G H J K L M N P R 1 2 3 4 5 NC/576M NC/1G A CE1 A CE2 BWb NC NC NC NC DQb VDDQ VSS VDDQ VSS VDD VSS VSS VSS NC DQb VDDQ VDD VSS NC DQb VDDQ VDD NC NC DQb DQb NC NC VDDQ NC VDDQ VDD VDD VDD DQb NC VDDQ DQb NC VDDQ DQb DQPb NC NC NC/144M NC/72M MODE A 6 7 8 NC CE3 CEN ADV/LD A A A BWa CLK WE VSS VSS OE VSS VDD A A NC VDDQ VDDQ NC NC DQPa DQa VSS VSS VDD VDDQ NC DQa VSS VSS VSS VDD VDDQ NC DQa VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDDQ NC VDDQ NC NC DQa DQa ZZ NC VDD VSS VSS VSS VDD VDDQ DQa NC VDD VSS VSS VSS VDD VDDQ DQa NC VDDQ VDDQ VDD VSS VSS NC VSS NC VSS NC VDD VSS VDDQ VDDQ DQa NC NC NC A A TDI A1 TDO A A A A A TMS A0 TCK A A A Document Number: 38-05353 Rev. *I NC/288M A Page 5 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Pin Definitions Pin Name I/O Type Pin Description A0 A1 A Inputsynchronous Address inputs used to select one of the address locations. Sampled at the rising edge of the CLK. BWa BWb BWc BWd BWe BWf BWg BWh Inputsynchronous Byte write select inputs, active LOW. Qualified with WE to conduct writes to the SRAM. Sampled on the rising edge of CLK. BWa controls DQa and DQPa, BWb controls DQb and DQPb, BWc controls DQc and DQPc, BWd controls DQd and DQPd, BWe controls DQe and DQPe, BWf controls DQf and DQPf, BWg controls DQg and DQPg, BWh controls DQh and DQPh. WE Inputsynchronous Write enable input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This signal must be asserted LOW to initiate a write sequence. ADV/LD Inputsynchronous Advance/load input used to advance the on-chip address counter or load a new address. When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new address can be loaded into the device for an access. After being deselected, ADV/LD should be driven LOW to load a new address. CLK Inputclock Clock input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN. CLK is only recognized if CEN is active LOW. CE1 Inputsynchronous Chip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3 to select/deselect the device. CE2 Inputsynchronous Chip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device. CE3 Inputsynchronous Chip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. OE Inputasynchronous Output enable, active LOW. Combined with the synchronous logic block inside the device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are tristated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state and when the device has been deselected. CEN Inputsynchronous Clock enable input, active LOW. When asserted LOW the clock signal is recognized by the SRAM. When deasserted HIGH the clock signal is masked. Since deasserting CEN does not deselect the device, CEN can be used to extend the previous cycle when required. DQa DQb DQc DQd DQe DQf DQg DQh I/Osynchronous Bidirectional data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by AX during the previous clock rise of the read cycle. The direction of the pins is controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave as outputs. When HIGH, DQa–DQd are placed in a tristate condition. The outputs are automatically tristated during the data portion of a write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE. DQPa,DQPb, DQPc,DQPd DQPe,DQPf DQPg,DQPh I/Osynchronous Bidirectional data parity I/O lines. Functionally, these signals are identical to DQ[31:0]. During write sequences, DQPa is controlled by BWa, DQPb is controlled by BWb, DQPc is controlled by BWc, and DQPd is controlled by BWd, DQPe is controlled by BWe, DQPf is controlled by BWf, DQPg is controlled by BWg, DQPh is controlled by BWh. Input strap pin Mode input. Selects the burst order of the device. Tied HIGH selects the interleaved burst order. Pulled LOW selects the linear burst order. MODE should not change states during operation. When left floating MODE defaults HIGH, to an interleaved burst order. MODE TDO JTAG serial output Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. synchronous Document Number: 38-05353 Rev. *I Page 6 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Pin Definitions (continued) Pin Name I/O Type Pin Description TDI JTAG serial input Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. synchronous TMS Test mode select This pin controls the test access port state machine. Sampled on the rising edge of synchronous TCK. TCK JTAG-clock VDD Power supply VDDQ Clock input to the JTAG circuitry. Power supply inputs to the core of the device. I/O power supply Power supply for the I/O circuitry. VSS NC NC/72M Ground N/A N/A NC/144M N/A Not connected to the die. Can be tied to any voltage level. NC/288M N/A Not connected to the die. Can be tied to any voltage level. NC/576M N/A Not connected to the die. Can be tied to any voltage level. NC/1G N/A Not connected to the die. Can be tied to any voltage level. ZZ Inputasynchronous Ground for the device. Should be connected to ground of the system. No connects. This pin is not connected to the die. Not connected to the die. Can be tied to any voltage level. ZZ “sleep” input. This active HIGH input places the device in a non-time critical “sleep” condition with data integrity preserved. During normal operation, this pin can be connected to VSS or left floating. ZZ pin has an internal pull-down. Functional Overview The CY7C1460AV33/CY7C1462AV33 are synchronous-pipelined burst NoBL SRAMs designed specifically to eliminate wait states during write/read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock signal is qualified with the clock enable input signal (CEN). If CEN is HIGH, the clock signal is not recognized and all internal states are maintained. All synchronous operations are qualified with CEN. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 2.6 ns (250 MHz device). Accesses can be initiated by asserting all three chip enables (CE1, CE2, CE3) active at the rising edge of the clock. If clock enable (CEN) is active LOW and ADV/LD is asserted LOW, the address presented to the device is latched. The access can either be a read or write operation, depending on the status of the write enable (WE). BW[x] can be used to conduct byte write operations. Write operations are qualified by the write enable (WE). All writes are simplified with on-chip synchronous self timed write circuitry. Three synchronous chip enables (CE1, CE2, CE3) and an asynchronous output enable (OE) simplify depth expansion. All operations (reads, writes, and deselects) are pipelined. ADV/LD should be driven LOW after the device has been deselected to load a new address for the next operation. Single Read Accesses A read access is initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are all asserted active, (3) the write enable input signal WE is deasserted HIGH, and (4) ADV/LD is asserted LOW. The address presented to the address inputs is latched into the address register and presented to the memory core and control Document Number: 38-05353 Rev. *I logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the rising edge of the next clock the requested data is allowed to propagate through the output register and onto the data bus within 2.6 ns (250 MHz device) provided OE is active LOW. After the first clock of the read access the output buffers are controlled by OE and the internal control logic. OE must be driven LOW for the device to drive out the requested data. During the second clock, a subsequent operation (read/write/deselect) can be initiated. Deselecting the device is also pipelined. Therefore, when the SRAM is deselected at clock rise by one of the chip enable signals, its output tristates following the next clock rise. Burst Read Accesses The CY7C1460AV33/CY7C1462AV33 have an on-chip burst counter that enables the user the ability to supply a single address and conduct up to four reads without reasserting the address inputs. ADV/LD must be driven LOW in order to load a new address into the SRAM, as described in the Single Read Accesses section earlier. The sequence of the burst counter is determined by the MODE input signal. A LOW input on MODE selects a linear burst mode, a HIGH selects an interleaved burst sequence. Both burst counters use A0 and A1 in the burst sequence, and wraps around when incremented sufficiently. A HIGH input on ADV/LD increments the internal burst counter regardless of the state of chip enables inputs or WE. WE is latched at the beginning of a burst cycle. Therefore, the type of access (read or write) is maintained throughout the burst sequence. Single Write Accesses Write access are initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are all asserted active, and (3) the write signal WE is Page 7 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 asserted LOW. The address presented to the address inputs is loaded into the address register. The write signals are latched into the control logic block. On the subsequent clock rise the data lines are automatically tristated regardless of the state of the OE input signal. This enables the external logic to present the data on DQ and DQP (DQa,b,c,d/DQPa,b,c,d for CY7C1460AV33 and DQa,b/DQPa,b for CY7C1462AV33). In addition, the address for the subsequent access (read/write/deselect) is latched into the address register (provided the appropriate control signals are asserted). On the next clock rise the data presented to DQ and DQP (DQa,b,c,d/DQPa,b,c,d for CY7C1460AV33 and DQa,b/DQPa,b for CY7C1462AV33) (or a subset for byte write operations, see Write Cycle Description table for details) inputs is latched into the device and the write is complete. The data written during the write operation is controlled by BW (BWa,b,c,d for CY7C1460AV33 and BWa,b for CY7C1462AV33) signals. The CY7C1460AV33/CY7C1462AV33 provides byte write capability that is described in the Write Cycle Description table. Asserting the write enable input (WE) with the selected byte write select (BW) input selectively writes to only the desired bytes. Bytes not selected during a byte write operation remains unaltered. A synchronous self timed write mechanism has been provided to simplify the write operations. Byte write capability has been included in order to greatly simplify read/modify/write sequences, which can be reduced to simple byte write operations. Because the CY7C1460AV33/CY7C1462AV33 are common I/O devices, data should not be driven into the device while the outputs are active. The output enable (OE) can be deasserted HIGH before presenting data to the DQ and DQP (DQa,b,c,d/DQPa,b,c,d for CY7C1460AV33 and DQa,b/DQPa,b for CY7C1462AV33) inputs. Doing so tristates the output drivers. As a safety precaution, DQ and DQP (DQa,b,c,d/DQPa,b,c,d for CY7C1460AV33 and DQa,b/DQPa,b for CY7C1462AV33) are automatically tristated during the data portion of a write cycle, regardless of the state of OE. address inputs. ADV/LD must be driven LOW in order to load the initial address, as described in the Single Write Accesses section earlier. When ADV/LD is driven HIGH on the subsequent clock rise, the chip enables (CE1, CE2, and CE3) and WE inputs are ignored and the burst counter is incremented. The correct BW (BWa,b,c,d for CY7C1460AV33 and BWa,b for CY7C1462AV33) inputs must be driven in each cycle of the burst write in order to write the correct bytes of data. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CE1, CE2, and CE3, must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Interleaved Burst Address Table (MODE = Floating or VDD) First Address Second Address Third Address Fourth Address A1, A0 A1, A0 A1, A0 A1, A0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 Linear Burst Address Table (MODE = GND) Burst Write Accesses The CY7C1460AV33/CY7C1462AV33 has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four WRITE operations without reasserting the First Address Second Address Third Address Fourth Address A1, A0 A1, A0 A1, A0 A1, A0 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 ZZ Mode Electrical Characteristics Parameter Description IDDZZ Sleep mode standby current Test Conditions ZZ VDD 0.2 V tZZS Device operation to ZZ ZZVDD 0.2 V tZZREC ZZ recovery time ZZ 0.2 V tZZI ZZ active to sleep current tRZZI ZZ inactive to exit sleep current Document Number: 38-05353 Rev. *I Min Max Unit – 100 mA – 2tCYC ns 2tCYC – ns This parameter is sampled – 2tCYC ns This parameter is sampled 0 – ns Page 8 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Truth Table The Truth Table for CY7C1460AV33/CY7C1462AV33 follows. [1, 2, 3, 4, 5, 6, 7] Operation Deselect cycle Continue deselect cycle Read cycle (begin burst) Read cycle (continue burst) NOP/dummy read (begin burst) Dummy read (continue burst) Write cycle (begin burst) Write cycle (continue burst) NOP/WRITE ABORT (begin burst) WRITE ABORT (continue burst) IGNORE CLOCK EDGE (stall) SLEEP MODE Address Used None None CE ZZ ADV/LD WE BWx OE CEN CLK DQ H X L L L H X X X X X X L L L-H L-H Tri-state Tri-state External L L L H X L L L-H Data out (Q) Next X L H X X L L L-H Data out (Q) External L L L H X H L L-H Tri-state Next X L H X X H L L-H Tri-state External L L L L L X L L-H Data in (D) Next X L H X L X L L-H Data in (D) None L L L L H X L L-H Tri-state Next X L H X H X L L-H Tri-state Current X L X X X X H L-H – None X H X X X X X X Tri-state Notes 1. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for all chip enables active. BWx = L signifies at least one byte write select is active, BWx = valid signifies that the desired byte write selects are asserted, see Write Cycle Description table for details. 2. Write is defined by WE and BWX. See Write Cycle Description table for details. 3. When a write cycle is detected, all I/Os are tristated, even during byte writes. 4. The DQ and DQP pins are controlled by the current cycle and the OE signal. 5. CEN = H inserts wait states. 6. Device powers up deselected and the I/Os in a tristate condition, regardless of OE. 7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles.During a read cycle DQs and DQPX = Tristate when OE is inactive or when the device is deselected, and DQs=data when OE is active. Document Number: 38-05353 Rev. *I Page 9 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Partial Write Cycle Description The Partial Write Cycle Description for CY7C1460AV33/CY7C1462AV33 follows. [8, 9, 10, 11] Function (CY7C1460AV33) WE BWd BWc BWb BWa Read H X X X X Write – no bytes written L H H H H Write byte a – (DQa and DQPa) L H H H L Write byte b – (DQb and DQPb) L H H L H Write bytes b, a L H H L L Write byte c – (DQc and DQPc) L H L H H Write bytes c, a L H L H L Write bytes c, b L H LL L H Write bytes c, b, a L H L L L Write byte d – (DQd and DQPd) L L H H H Write bytes d, a L L H H L Write bytes d, b L L H L H Write bytes d, b, a L L H L L Write bytes d, c L L L H H Write bytes d, c, a L L L H L Write bytes d, c, b L L L L H Write all bytes L L L L L Function (CY7C1462AV33)[9, 11] WE BWb BWa Read H x x Write – no bytes written L H H Write byte a – (DQa and DQPa) L H L Write byte b – (DQb and DQPb) L L H Write both bytes L L L Notes 8. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for all chip enables active. BWx = L signifies at least one byte write select is active, BWx = valid signifies that the desired byte write selects are asserted, see Write Cycle Description table for details. 9. Write is defined by WE and BWX. See Write Cycle Description table for details. 10. When a write cycle is detected, all I/Os are tristated, even during byte writes. 11. Table only lists a partial listing of the byte write combinations. Any combination of BW[a:d] is valid. Appropriate write is done based on which byte write is active. Document Number: 38-05353 Rev. *I Page 10 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1460AV33/CY7C1462AV33 incorporates a serial boundary scan test access port (TAP). This part is fully compliant with 1149.1. The TAP operates using JEDEC-standard 3.3 V or 2.5 V I/O logic level. The CY7C1460AV33/CY7C1462AV33 contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull-up resistor. TDO should be left unconnected. Upon power-up, the device comes up in a reset state which does not interfere with the operation of the device. Test Data-In (TDI) The TDI ball is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) of any register. (See TAP Controller Block Diagram.) Test Data-Out (TDO) The TDO output ball is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. (See TAP Controller State Diagram.) TAP Controller Block Diagram 0 Bypass Register TAP Controller State Diagram 2 1 0 1 TEST-LOGIC RESET TDI Selection Circuitry 0 0 RUN-TEST/ IDLE Instruction Register Selection Circuitry TDO 31 30 29 . . . 2 1 0 1 SELECT DR-SCA N 1 SELECT IR-SCAN 0 1 1 CAPTURE-DR x . . . . . 2 1 0 CAPTURE-IR Boundary Scan Register 0 SHIFT-DR 0 SHIFT-IR 1 0 1 EXIT1-DR 1 EXIT1-IR 0 1 TCK TM S TAP CONTROLLER 0 PAUSE-DR 0 PAUSE-IR 1 0 Performing a TAP Reset 1 EXIT2-DR 0 EXIT2-IR 1 1 UPDATE-DR 1 Identification Register 0 0 0 1 0 UPDATE-IR 1 0 A RESET is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. At power up, the TAP is reset internally to ensure that TDO comes up in a high Z state. TAP Registers The 0/1 next to each state represents the value of TMS at the rising edge of TCK. Test Access Port (TAP) Test Clock (TCK) The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. It is allowable to leave this ball unconnected if the TAP is not used. The ball is pulled up internally, resulting in a logic HIGH level. Document Number: 38-05353 Rev. *I Registers are connected between the TDI and TDO balls and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK. Instruction Register Three bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the TAP Controller Block Diagram. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. Page 11 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to enable fault isolation of the board-level serial test data path. The IDCODE instruction is loaded into the instruction register upon power up or whenever the TAP controller is given a test logic reset state. Bypass Register SAMPLE Z To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO pins when the TAP controller is in a Shift-DR state. The SAMPLE Z command puts the output bus into a high Z state until the next command is given during the “Update IR” state. Boundary Scan Register SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and output pins is captured in the boundary scan register. The boundary scan register is connected to all the input and bidirectional balls on the SRAM. The length of the boundary scan register for the SRAM in different packages is listed in the Scan Register Sizes table. The boundary scan register is loaded with the contents of the RAM I/O ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the I/O ring. The 165-ball FBGA Boundary Scan Order [16] on page 16 and show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in the Identification Register Definitions on page 14 TAP Instruction Set Overview SAMPLE/PRELOAD The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output undergoes a transition. The TAP may then try to capture a signal while in transition (metastable state). This does not harm the device, but there is no guarantee as to the value that is captured. Repeatable results may not be possible. To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK# captured in the boundary scan register. After the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. PRELOAD allows an initial data pattern to be placed at the latched parallel outputs of the boundary scan register cells prior to the selection of another boundary scan test operation. Eight different instructions are possible with the three bit instruction register. All combinations are listed in the Instruction Codes table. Three of these instructions are listed as RESERVED and should not be used. The other five instructions described in detail are as follows. The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required—that is, while data captured is shifted out, the preloaded data can be shifted in. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO balls. To execute the instruction after it is shifted in, the TAP controller needs to be moved into the Update-IR state. When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. IDCODE The EXTEST instruction enables the preloaded data to be driven out through the system output pins. This instruction also selects the boundary scan register to be connected for serial access between the TDI and TDO in the shift-DR controller state. The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. Document Number: 38-05353 Rev. *I BYPASS EXTEST Page 12 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 This bit can be set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the “Shift-DR” state. During “Update-DR,” the value loaded into that shift-register cell latches into the preload register. When the EXTEST instruction is entered, this bit directly controls the output Q-bus pins. Note that this bit is preset HIGH to enable the output when the device is powered-up, and also when the TAP controller is in the “Test-Logic-Reset” state. EXTEST OUTPUT BUS TRISTATE IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tristate mode. The boundary scan register has a special bit located at bit #89 (for 165-ball FBGA package) or bit #138 (for 209-ball FBGA package). When this scan cell, called the “extest output bus tristate,” is latched into the preload register during the “Update-DR” state in the TAP controller, it directly controls the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it enables the output buffers to drive the output bus. When LOW, this bit places the output bus into a high Z condition. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. TAP Timing Diagram 1 2 Test Clock (TCK ) 3 t TH t TM SS t TM SH t TDIS t TDIH t TL 4 5 6 t CY C Test M ode Select (TM S) Test Data-In (TDI) t TDOV t TDOX Test Data-Out (TDO) DON’T CA RE UNDEFINED TAP AC Switching Characteristics Over the Operating Range[12, 13] Parameter Description Clock tTCYC TCK clock cycle time TCK clock frequency tTF TCK clock HIGH time tTH tTL TCK clock LOW time Output Times TCK clock LOW to TDO valid tTDOV tTDOX TCK clock LOW to TDO invalid Setup Times TMS setup to TCK clock rise tTMSS tTDIS TDI setup to TCK clock rise Capture setup to TCK rise tCS Hold Times tTMSH TMS hold after TCK clock rise TDI hold after clock rise tTDIH tCH Capture hold after clock rise Min Max Unit 50 – 20 20 – 20 – – ns MHz ns ns – 0 10 – ns ns 5 5 5 – – – ns ns ns 5 5 5 – – – ns ns ns Notes 12. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 13. Test conditions are specified using the load in TAP AC test Conditions. tR/tF = 1 ns. Document Number: 38-05353 Rev. *I Page 13 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 3.3 V TAP AC Test Conditions 2.5 V TAP AC Test Conditions Input pulse levels................................................VSS to 3.3 V Input pulse levels ............................................... VSS to 2.5 V Input rise and fall times....................................................1 ns Input rise and fall time .....................................................1 ns Input timing reference levels.......................................... 1.5 V Input timing reference levels........................................ 1.25 V Output reference levels ................................................. 1.5 V Output reference levels ............................................... 1.25 V Test load termination supply voltage ............................. 1.5 V Test load termination supply voltage ........................... 1.25 V Figure 3. 3.3 V TAP AC Output Load Equivalent Figure 4. 2.5 V TAP AC Output Load Equivalent 1.25V 1.5V 50Ω 50Ω TDO TDO Z O= 50Ω Z O= 50Ω 20pF 20pF TAP DC Electrical Characteristics and Operating Conditions (0 °C < TA < +70 °C; VDD = 3.135 V to 3.6 V unless otherwise noted)[14] Parameter VOH1 VOH2 VOL1 VOL2 VIH VIL IX Description Test Conditions Output HIGH voltage Output HIGH voltage Output LOW voltage Output LOW voltage Min Max Unit IOH = –4.0 mA, VDDQ = 3.3 V 2.4 – V IOH = –1.0 mA, VDDQ = 2.5 V 2.0 – V IOH = –100 µA VDDQ = 3.3 V 2.9 – V VDDQ = 2.5 V 2.1 – V IOL = 8.0 mA VDDQ = 3.3 V – 0.4 V IOL = 1.0 mA VDDQ = 2.5 V – 0.4 V IOL = 100 µA Input HIGH voltage Input LOW voltage Input load current VDDQ = 3.3 V – 0.2 V VDDQ = 2.5 V – 0.2 V VDDQ = 3.3 V 2.0 VDD + 0.3 V VDDQ = 2.5 V 1.7 VDD + 0.3 V VDDQ = 3.3 V –0.3 0.8 V VDDQ = 2.5 V –0.3 0.7 V –5 5 µA GND < VIN < VDDQ Identification Register Definitions Instruction Field Revision number (31:29) Device depth (28:24)[15] Architecture/memory type(23:18) Bus width/density(17:12) Cypress JEDEC ID code (11:1) ID register presence indicator (0) CY7C1460AV33 (1 M × 36) 000 01011 001000 100111 00000110100 1 CY7C1462AV33 (2 M × 18) 000 01011 001000 010111 00000110100 1 Description Describes the version number. Reserved for internal use Defines memory type and architecture Defines width and density Allows unique identification of SRAM vendor. Indicates the presence of an ID register. Notes 14. All voltages referenced to VSS (GND). 15. Bit #24 is “1” in the ID Register Definitions for both 2.5 V and 3.3 V versions of this device. Document Number: 38-05353 Rev. *I Page 14 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Scan Register Sizes Register Name Bit Size (× 36) Bit Size (× 18) Instruction 3 3 Bypass 1 1 ID 32 32 Boundary scan order (165-ball FBGA package) 89 89 Identification Codes Instruction Code Description EXTEST 000 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM outputs to high Z state. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operations. SAMPLE Z 010 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a high Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Does not affect SRAM operation. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. Document Number: 38-05353 Rev. *I Page 15 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 165-ball FBGA Boundary Scan Order [16] CY7C1460AV33 (1 M × 36), CY7C1462AV33 (2 M × 18) Bit# ball ID Bit# ball ID Bit# ball ID Bit# ball ID 1 N6 26 E11 51 A3 76 N1 2 N7 27 D11 52 A2 77 N2 3 10N 28 G10 53 B2 78 P1 4 P11 29 F10 54 C2 79 R1 5 P8 30 E10 55 B1 80 R2 6 R8 31 D10 56 A1 81 P3 7 R9 32 C11 57 C1 82 R3 8 P9 33 A11 58 D1 83 P2 9 P10 34 B11 59 E1 84 R4 10 R10 35 A10 60 F1 85 P4 11 R11 36 B10 61 G1 86 N5 12 H11 37 A9 62 D2 87 P6 13 N11 38 B9 63 E2 88 R6 14 M11 39 C10 64 F2 89 Internal 15 L11 40 A8 65 G2 16 K11 41 B8 66 H1 17 J11 42 A7 67 H3 18 M10 43 B7 68 J1 19 L10 44 B6 69 K1 20 K10 45 A6 70 L1 21 J10 46 B5 71 M1 22 H9 47 A5 72 J2 23 H10 48 A4 73 K2 24 G11 49 B4 74 L2 25 F11 50 B3 75 M2 Note 16. Bit# 89 is preset HIGH. Document Number: 38-05353 Rev. *I Page 16 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Maximum Ratings Neutron Soft Error Immunity Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Parameter Description Storage temperature ................................ –65 °C to +150 °C LSBU Logical single bit upsets 25 °C LMBU Logical multi bit upsets SEL Single event latch-up Ambient temperature with power applied ........................................... –55 °C to +125 °C Supply voltage on VDD relative to GND ........–0.5 V to +4.6 V Supply voltage on VDDQ relative to GND....... –0.5 V to +VDD DC to outputs in tri-state ....................–0.5 V to VDDQ + 0.5 V DC input voltage .................................. –0.5 V to VDD + 0.5 V Current into outputs (LOW) ......................................... 20 mA Static discharge voltage.......................................... > 2001 V (per MIL-STD-883, method 3015) Test Conditions Typ Max* Unit 361 394 FIT/ Mb 25 °C 0 0.01 FIT/ Mb 85 °C 0 0.1 FIT/ Dev * No LMBU or SEL events occurred during testing; this column represents a statistical 2, 95% confidence limit calculation. For more details refer to Application Note AN 54908 “Accelerated Neutron SER Testing and Calculation of Terrestrial Failure Rates” Latch-up current .................................................... > 200 mA Operating Range Range Ambient Temperature Commercial 0 °C to +70 °C Industrial –40 °C to +85 °C VDD VDDQ 3.3 V – 5% / + 10% 2.5 V – 5% to VDD Electrical Characteristics Over the Operating Range[17, 18] Parameter VDD VDDQ Description Power supply voltage I/O supply voltage VOH Output HIGH voltage VOL Output LOW voltage VIH Input HIGH voltage[17] VIL Input LOW voltage[17] IX Input leakage current except ZZ and MODE Input current of MODE IOZ Test Conditions for 3.3 V I/O for 2.5 V I/O for 3.3 V I/O, IOH =4.0 mA for 2.5 V I/O, IOH = 1.0 mA for 3.3 V I/O, IOL =8.0 mA for 2.5 V I/O, IOL =1.0 mA for 3.3 V I/O for 2.5 V I/O for 3.3 V I/O for 2.5 V I/O GND VI VDDQ Input = VSS Input = VDD Input current of ZZ Input = VSS Input = VDD Output leakage current GND VI VDDQ, output disabled Min 3.135 3.135 2.375 2.4 2.0 – – 2.0 1.7 –0.3 –0.3 –5 –30 – –5 – –5 Max Unit 3.6 V VDD V 2.625 V – V – V 0.4 V 0.4 V VDD + 0.3 V V VDD + 0.3 V V 0.8 V 0.7 V 5 A – 5 – 30 5 A A A A A Notes 17. Overshoot: VIH(AC) < VDD + 1.5 V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2 V (Pulse width less than tCYC/2). 18. Tpower up: Assumes a linear ramp from 0 V to VDD (Min) within 200 ms. During this time VIH < VDD and VDDQ < VDD. Document Number: 38-05353 Rev. *I Page 17 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Electrical Characteristics (continued) Over the Operating Range[17, 18] Parameter IDD ISB1 Description VDD operating supply Automatic CE power-down current—TTL inputs Automatic CE power-down current—CMOS inputs Automatic CE power-down current—CMOS inputs Automatic CE power-down current—TTL inputs ISB2 ISB3 ISB4 Test Conditions VDD = Max, IOUT = 0 mA, 4 ns cycle, 250 MHz f = fMAX = 1/tCYC 5 ns cycle, 200 MHz 6 ns cycle, 167 MHz Max VDD, device deselected, All speed grades VIN VIH or VIN VIL, f = fMAX = 1/tCYC Max VDD, device deselected, All speed grades VIN 0.3 V or VIN > VDDQ 0.3 V, f=0 Max VDD, device deselected, All speed grades VIN 0.3 V or VIN > VDDQ 0.3 V, f = fMAX = 1/tCYC Max VDD, device deselected, All speed grades VIN VIH or VIN VIL, f=0 Min – – – – Max 475 425 375 225 Unit mA mA mA mA – 120 mA – 200 mA – 135 mA Capacitance[19] Parameter CIN CCLK CI/O Description Input capacitance Clock input capacitance Input/output capacitance Test Conditions TA = 25 C, f = 1 MHz, VDD = 2.5 V, VDDQ = 2.5 V 100 TQFP Max 165 FBGA Max 6.5 7 3 7 5.5 6 Unit pF pF pF Thermal Resistance[19] Parameters JA JC Description Test Conditions Thermal resistance (junction to ambient) Thermal resistance (junction to case) Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. 100 TQFP Package 25.21 165 FBGA Package 20.8 C/W 2.28 3.2 C/W Unit Figure 5. AC Test Loads and Waveforms 3.3 V I/O Test Load R = 317 3.3 V OUTPUT OUTPUT RL = 50 Z0 = 50 VT = 1.5 V (a) 2.5 V I/O Test Load GND 5 pF INCLUDING JIG AND SCOPE 2.5 V OUTPUT R = 351 VT = 1.25 V (a) 5 pF INCLUDING JIG AND SCOPE 10% 90% 10% 90% 1 ns 1 ns (b) (c) R = 1667 ALL INPUT PULSES VDDQ OUTPUT RL = 50 Z0 = 50 ALL INPUT PULSES VDDQ GND R =1538 (b) 10% 90% 10% 90% 1 ns 1 ns (c) Note 19. Tested initially and after any design or process changes that may affect these parameters. Document Number: 38-05353 Rev. *I Page 18 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Switching Characteristics Over the Operating Range [20, 21] Parameter tPower[22] Description VCC (typical) to the first access read or write –250 –200 –167 Unit Min Max Min Max Min Max 1 – 1 – 1 – ms 4.0 – 5.0 – 6.0 – ns Clock tCYC Clock cycle time FMAX Maximum operating frequency – 250 – 200 – 167 MHz tCH Clock HIGH 1.5 – 2.0 – 2.4 – ns tCL Clock LOW 1.5 – 2.0 – 2.4 – ns Output Times tCO Data output valid after CLK rise – 2.6 – 3.2 – 3.4 ns tEOV OE LOW to output valid – 2.6 – 3.0 – 3.4 ns tDOH Data output hold after CLK rise 1.0 – 1.5 – 1.5 – ns – 2.6 – 3.0 – 3.4 ns tCHZ Clock to high Z[23, 24, 25] tCLZ Clock to low Z[23, 24, 25] 1.0 – 1.3 – 1.5 – ns tEOHZ OE HIGH to output high Z[23, 24, 25] – 2.6 – 3.0 – 3.4 ns 0 – 0 – 0 – ns tEOLZ OE LOW to output low Z[23, 24, 25] Setup Times tAS Address setup before CLK rise 1.2 – 1.4 – 1.5 – ns tDS Data input setup before CLK rise 1.2 – 1.4 – 1.5 – ns tCENS CEN setup before CLK rise 1.2 – 1.4 – 1.5 – ns tWES WE, BWx setup before CLK rise 1.2 – 1.4 – 1.5 – ns tALS ADV/LD setup before CLK rise 1.2 – 1.4 – 1.5 – ns tCES Chip select setup 1.2 – 1.4 – 1.5 – ns tAH Address hold after CLK rise 0.3 – 0.4 – 0.5 – ns tDH Data input hold after CLK rise 0.3 – 0.4 – 0.5 – ns tCENH CEN hold after CLK rise 0.3 – 0.4 – 0.5 – ns tWEH WE, BWx hold after CLK rise 0.3 – 0.4 – 0.5 – ns tALH ADV/LD hold after CLK rise 0.3 – 0.4 – 0.5 – ns tCEH Chip select hold after CLK rise 0.3 – 0.4 – 0.5 – ns Hold Times Notes 20. Timing reference is 1.5 V when VDDQ=3.3 V and is 1.25 V when VDDQ=2.5 V. 21. Test conditions shown in (a) of AC Test Loads unless otherwise noted. 22. This part has a voltage regulator internally; tpower is the time power needs to be supplied above VDD minimum initially, before a Read or Write operation can be initiated. 23. tCHZ, tCLZ, tEOLZ, and tEOHZ are specified with AC test conditions shown in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage. 24. At any voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve high Z prior to low Z under the same system conditions. 25. This parameter is sampled and not 100% tested. Document Number: 38-05353 Rev. *I Page 19 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Switching Waveforms Figure 6. Read/Write/Timing[26, 27, 28] 1 2 3 t CYC 4 5 6 A3 A4 7 8 9 A5 A6 10 CLK t CENS t CENH t CES t CEH t CH t CL CEN CE ADV/LD WE BW x A1 ADDRESS A2 A7 t CO t AS t DS t AH Data In-Out (DQ) t DH D(A1) t CLZ D(A2) D(A2+1) t DOH Q(A3) t OEV Q(A4) t CHZ Q(A4+1) D(A5) Q(A6) t OEHZ t DOH t OELZ OE WRITE D(A1) WRITE D(A2) BURST WRITE D(A2+1) READ Q(A3) DON’T CARE READ Q(A4) BURST READ Q(A4+1) WRITE D(A5) READ Q(A6) WRITE D(A7) DESELECT UNDEFINED Notes 26. For this waveform ZZ is tied low. 27. When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH,CE1 is HIGH or CE2 is LOW or CE3 is HIGH. 28. Order of the burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional. Document Number: 38-05353 Rev. *I Page 20 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Switching Waveforms 1 2 A1 A2 (continued) Figure 7. NOP, STALL and DESELECT Cycles[29, 30, 31] 3 4 5 A3 A4 6 7 8 9 10 CLK CEN CE ADV/LD WE BWx ADDRESS A5 t CHZ D(A1) Data Q(A2) D(A4) Q(A3) Q(A5) In-Out (DQ) WRITE D(A1) READ Q(A2) STALL READ Q(A3) WRITE D(A4) STALL DON’T CARE NOP READ Q(A5) DESELECT CONTINUE DESELECT UNDEFINED Figure 8. ZZ Mode Timing[32, 33] CLK t ZZ ZZ I t t ZZREC ZZI SUPPLY I DDZZ t RZZI A LL INPUTS DESELECT or READ Only (except ZZ) Outputs (Q) High-Z DON’T CARE Notes 29. For this waveform ZZ is tied low. 30. When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH,CE1 is HIGH or CE2 is LOW or CE3 is HIGH. 31. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrated CEN being used to create a pause. A write is not performed during this cycle. 32. Device must be deselected when entering ZZ mode. See cycle description table for all possible signal conditions to deselect the device. 33. I/Os are in high Z when exiting ZZ sleep mode. Document Number: 38-05353 Rev. *I Page 21 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Ordering Information The table below contains only the parts that are currently available. If you don’t see what you are looking for, please contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices Speed (MHz) 167 Ordering Code CY7C1460AV33-167AXC Package Diagram Part and Package Type 51-85050 100-pin Thin Quad Flat Pack (14 × 20 × 1.4 mm) Pb-free Operating Range Commercial CY7C1462AV33-167AXC CY7C1460AV33-167BZC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 × 17 × 1.4 mm) CY7C1460AV33-167AXI 51-85050 100-pin Thin Quad Flat Pack (14 × 20 × 1.4 mm) Pb-free Industrial 200 CY7C1460AV33-200AXC 51-85050 100-pin Thin Quad Flat Pack (14 × 20 × 1.4 mm) Pb-free Commercial 250 CY7C1460AV33-250AXC 51-85050 100-pin Thin Quad Flat Pack (14 × 20 × 1.4 mm) Pb-free Commercial CY7C1460AV33-250AXI 51-85050 100-pin Thin Quad Flat Pack (14 × 20 × 1.4 mm) Pb-free Industrial Ordering Code Definitions CY 7C 14XX A V33 - 167 XX X Temperature range: X = C or I C = Commercial; I = Industrial Package Type: XX = AX or BZ or BG AX = 100-pin TQFP (Pb-free) BZ = 165-ball FPBGA Speed Grade (167 MHz / 200 MHz / 250 MHz) V33 = 3.3 V Process Technology 90 nm 14XX = 1460 or 1462 1460 = PL, 1 Mb × 36 (36 Mb) 1462 = PL, 2 Mb × 18 (36 Mb) Marketing Code: 7C = SRAMs Company ID: CY = Cypress Document Number: 38-05353 Rev. *I Page 22 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Package Diagrams Figure 9. 100-pin TQFP (14 × 20 × 1.4 mm) 51-85050 *D Document Number: 38-05353 Rev. *I Page 23 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Package Diagrams (continued) Figure 10. 165-ball FBGA (15 × 17 × 1.4 mm) 51-85165 *B Document Number: 38-05353 Rev. *I Page 24 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Acronyms Document Conventions Acronym Description Units of Measure CE chip enable CEN clock enable ns nanoseconds CMOS complementary metal oxide semiconductor V volts FPBGA fine-pitch ball grid array µA microamperes I/O input/output mA milliamperes JTAG Joint Test Action Group ms milliseconds NoBL No Bus Latency mm millimeter OE output enable MHz megahertz SRAM static random access memory pF picofarads TCK test clock W watts TMS test mode select °C degrees Celcius TDI test data-in TDO test data-out TQFP thin quad flat pack WE write enable Document Number: 38-05353 Rev. *I Symbol Unit of Measure Page 25 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Document History Page Document Title: CY7C1460AV33/CY7C1462AV33, 36-Mbit (1 M × 36/2 M × 18) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05353 Revision ECN Orig. of Change Submission Date Description of Change ** 254911 SYT See ECN New Data sheet Part number changed from previous revision. New and old part number differ by the letter “A” *A 303533 SYT See ECN Changed H9 pin from VSSQ to VSS on the Pin Configuration table for 209 FBGA on Page # 5 Changed the test condition from VDD = Min to VDD = Max for VOL in the Electrical Characteristics table Replaced JA and JC from TBD to respective Thermal Values for All Packages on the Thermal Resistance Table Changed IDD from 450, 400 and 350 mA to 475, 425 and 375 mA for 250, 200 and 167 MHz respectively Changed ISB1 from 190, 180 and 170 mA to 225 mA for 250, 200 and 167 MHz respectively Changed ISB2 from 80 mA to 100 mA for all frequencies Changed ISB3 from 180, 170 and 160 mA to 200 mA for 250, 200 and 167 MHz respectively Changed ISB4 from 100 mA to 110 mA for all frequencies Changed CIN, CCLK and CI/O to 6.5, 3 and 5.5 pF from 5, 5 and 7 pF for TQFP Package Changed tCO from 3.0 to 3.2 ns and tDOH from 1.3 ns to 1.5 ns for 200 MHz Speed Bin Added Pb-Free information for 100-pin TQFP and 165 FBGA and 209 BGA packages *B 331778 SYT See ECN Modified Address Expansion balls in the pinouts for 165 FBGA and 209 BGA Package as per JEDEC standards and updated the Pin Definitions accordingly Modified VOL, VOH test conditions Changed CIN, CCLK and CI/O to 7, 7and 6 pF from 5, 5 and 7 pF for 165 FBGA Package Added Industrial Temperature Grade Changed ISB2 and ISB4 from 100 and 110 mA to 120 and 135 mA respectively Updated the Ordering Information by Shading and Unshading MPNs as per availability *C 417509 RXU See ECN Converted from Preliminary to Final Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Changed IX current value in MODE from –5 and 30 A to –30 and 5 A respectively and also Changed IX current value in ZZ from –30 and 5 A to –5 and 30 A respectively on page# 18 Modified test condition from VIH < VDD to VIH VDD Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the Electrical Characteristics Table Replaced Package Name column with Package Diagram in the Ordering Information table Replaced Package Diagram of 51-85050 from *A to *B *D 473229 NXR See ECN Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP AC Switching Characteristics table Updated the Ordering Information table. Document Number: 38-05353 Rev. *I Page 26 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Document History Page (continued) Document Title: CY7C1460AV33/CY7C1462AV33, 36-Mbit (1 M × 36/2 M × 18) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05353 Revision ECN Orig. of Change Submission Date *E 2756998 VKN 08/28/09 Included Soft Error Immunity Data Modified Ordering Information table by including parts that are available and modified the disclaimer for the Ordering information. Updated Package Diagram for spec 51-85165. *F 2900822 NJY 03/29/2010 Added CY7C1460AV33-167AXI part in Ordering Information Updated links in Sales, Solutions, and Legal Information Updated 100-pin TQFP and 209-Ball FBGA package diagrams. *G 3043005 09/30/2010 NJY Added Ordering Code Definitions. Added Acronyms and Units of Measure. Minor edits and updated in new template. *H 3051765 10/07/2010 NJY Removed all mention of CY7C1464 and 209-Ball FBGA: part pruned. Corrected typos in Units of Measure on page 25. *I 3207715 03/28/2011 NJY Updated Ordering Information. Updated Package Diagrams. Document Number: 38-05353 Rev. *I Description of Change Page 27 of 28 [+] Feedback CY7C1460AV33 CY7C1462AV33 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive PSoC Solutions cypress.com/go/automotive Clocks & Buffers Interface Lighting & Power Control cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory cypress.com/go/memory Optical & Image Sensing cypress.com/go/image PSoC cypress.com/go/psoc Touch Sensing cypress.com/go/touch USB Controllers cypress.com/go/USB Wireless/RF cypress.com/go/wireless © Cypress Semiconductor Corporation, 2004-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 38-05353 Rev. *I ® TM QDR is the registered trademark and NoBL the trademarks of their respective holders. and No Bus Latency Revised March 28, 2011 TM Page 28 of 28 are trademarks of Cypress Semiconductor Corporation. All products and company names mentioned in this document may be [+] Feedback