BTA225-600BT Three quadrant triacs high commutation Rev. 01 — 3 March 2005 Product data sheet 1. Product profile 1.1 General description Passivated high commutation triac in a SOT78 (TO-220AB) plastic package. Intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. 1.2 Features ■ High maximum junction temperature ■ High commutation capability 1.3 Applications ■ Motor control ■ Industrial and domestic heating 1.4 Quick reference data ■ VDRM ≤ 600 V ■ ITSM ≤ 200 A ■ IT(RMS) ≤ 25 A ■ IGT ≤ 50 mA (T2+ G+; T2+ G−; T2− G−) 2. Pinning information Table 1: Pinning Pin Description 1 main terminal 1 (T1) 2 main terminal 2 (T2) 3 gate (G) mb mounting base, connected to main terminal 2 (T2) Simplified outline Symbol mb T2 T1 G sym051 123 03ab54 SOT78 (TO-220AB) BTA225-600BT Philips Semiconductors Three quadrant triacs high commutation 3. Ordering information Table 2: Ordering information Type number Package Name BTA225-600BT SC-46 Description Version plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions [1] VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 full sine wave; Tmb ≤ 116 °C; see Figure 4 and 5 tp = 20 ms tp = 16.7 ms Min Max Unit - 600 V - 25 A - 200 A - 220 A I2t I2t for fusing t = 10 ms - 200 A2s dIT/dt repetitive rate of rise of on-state current after triggering ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current - 2 A VGM peak gate voltage - 5 V PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature −40 +150 °C Tj junction temperature - 150 °C [1] over any 20 ms period Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. 9397 750 14379 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 March 2005 2 of 12 BTA225-600BT Philips Semiconductors Three quadrant triacs high commutation 001aac222 40 Ptot (W) α α Tmb(max) (°C) α = 180 °C 120 °C 30 110 120 90 °C 60 °C 20 130 30 °C 140 10 150 30 0 0 5 10 15 20 25 IT(RMS) (A) α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 001aac224 250 ITSM IT ITSM (A) tp 200 time Tj initial = 25 °C max 150 100 50 0 1 102 10 103 n f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 9397 750 14379 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 March 2005 3 of 12 BTA225-600BT Philips Semiconductors Three quadrant triacs high commutation 001aac223 103 ITSM (A) dlT/dt limit 102 ITSM IT tp time Tj initial = 25 °C max 10 10−5 10−4 10−3 10−2 10−1 tp (s) tp ≤ 20 ms Fig 3. Non-repetitive peak on-state current as a function of pulse width (tp) for sinusoidal currents; maximum values 003aaa805 80 IT(RMS) (A) 003aaa796 30 116 °C IT(RMS) (A) 60 20 40 10 20 0 10-2 10-1 0 1 10 surge duration (s) −50 0 50 100 150 200 Tmb (°C) f = 50 Hz; Tmb ≤ 116 °C Fig 4. RMS on-state current as a function of surge duration for sinusoidal currents Fig 5. RMS on-state current as a function of mounting base temperature; maximum values 9397 750 14379 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 March 2005 4 of 12 BTA225-600BT Philips Semiconductors Three quadrant triacs high commutation 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base full cycle - - 1.0 K/W half cycle - - 1.4 K/W thermal resistance from junction to ambient in free air - 60 - K/W Rth(j-a) 001aac229 10 Zth(j-mb) (K/W) 1 (1) 10−1 (2) 10−2 10−3 10−5 PD tp t 10−4 10−3 10−2 10−1 1 10 tp (s) (1) Unidirectional (2) Bidirectional Fig 6. Transient thermal impedance as a function of pulse width 9397 750 14379 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 March 2005 5 of 12 BTA225-600BT Philips Semiconductors Three quadrant triacs high commutation 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit T2+ G+ 2 18 50 mA T2+ G− 2 21 50 mA T2− G− 2 34 50 mA T2+ G+ - 31 60 mA T2+ G− - 34 90 mA T2− G− - 30 60 mA VD = 12 V; IGT = 0.1 A; see Figure 11 - 31 60 mA Static characteristics gate trigger current IGT latching current IL VD = 12 V; IT = 0.1 A; see Figure 8 [1] VD = 12 V; IGT = 0.1 A; see Figure 10 IH holding current VT on-state voltage IT = 30 A; see Figure 9 - 1.3 1.55 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 150 °C 0.25 0.4 - V VD = VDRM(max); Tj = 150 °C - 1 5 mA off-state leakage current ID Dynamic characteristics dVD/dt critical rate of rise of off-state voltage VDM = 67 % VDRM(max); Tj = 150 °C; exponential waveform; gate open circuit 1000 4000 - V/µs dIcom/dt critical rate of change of commutating current VDM = 400 V; Tj = 150 °C; IT(RMS) = 25 A; without snubber; gate open circuit; see Figure 12 9 20 - A/ms tgt gate controlled turn-on time ITM = 30 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs - 2 - µs [1] Device does not trigger in the T2−, G+ quadrant. 9397 750 14379 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 March 2005 6 of 12 BTA225-600BT Philips Semiconductors Three quadrant triacs high commutation 001aac225 1.6 001aac226 3 VGT(Tj) IGT(Tj) VGT(25°C) IGT(25°C) (1) 1.2 2 (2) (3) 0.8 1 0.4 −50 0 50 100 0 −50 150 0 50 100 Tj (°C) 150 Tj (°C) (1) T2− G− (2) T2+ G− (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature 001aac227 80 IT (A) 001aac228 3 IL(Tj) IL(25°C) 60 2 40 1 20 (1) (2) (3) 0 0 1 2 3 0 −50 0 50 100 150 Tj (°C) VT (V) VO = 1.073 V RS = 0.015 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current characteristics Fig 10. Normalized latching current as a function of junction temperature 9397 750 14379 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 March 2005 7 of 12 BTA225-600BT Philips Semiconductors Three quadrant triacs high commutation 001aac230 3 IH(Tj) dIcom/dt (A/ms) IH(25°C) 2 102 1 10 0 −50 001aac231 103 1 0 50 100 150 0 40 80 Tj (°C) Fig 11. Normalized holding current as a function of junction temperature 120 160 Tj (°C) Fig 12. Critical rate of change of commutating current as a function of junction temperature; typical values 7. Package information Refer to mounting instructions for SOT78 (TO-220AB) package. Epoxy meets requirements of UL94 V-0 at 1⁄8 inch. 9397 750 14379 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 March 2005 8 of 12 BTA225-600BT Philips Semiconductors Three quadrant triacs high commutation 8. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.6 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 01-02-16 03-01-22 Fig 13. Package outline SOT78 (TO-220AB) 9397 750 14379 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 March 2005 9 of 12 BTA225-600BT Philips Semiconductors Three quadrant triacs high commutation 9. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BTA225-600BT_1 20050303 Product data sheet - 9397 750 14379 - 9397 750 14379 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 March 2005 10 of 12 BTA225-600BT Philips Semiconductors Three quadrant triacs high commutation 10. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions 12. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14379 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 3 March 2005 11 of 12 Philips Semiconductors BTA225-600BT Three quadrant triacs high commutation 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package information . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 3 March 2005 Document number: 9397 750 14379 Published in The Netherlands