ISAHAYA RT3NDDM

PRELIMINARY
RT3NDDM
Composite Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
OUTLINE DRAWING
DESCRIPTION
RT3NDDM is a composite transistor built with two
Unit:mm
2.1
RT1N237 chips in SC-88 package.
2.0
Built in bias resistor (R1=2.2kΩ,R2=47kΩ)
Each transistor elements are independent.
Mini package for easy mounting
①
⑥
0.65
Silicon NPN epitaxial type
②
⑤
0.65
FEATURE
③
④
0.2
1.25
APPLICATION
Inverted circuit, switching circuit,
0.13
0∼0.1
0.65
0.9
interface circuit, driver circuit
⑥
⑤
R1
④
R2
RTr1
RTr2
R2
R1
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
⑥:COLLECTOR1
JEITA:SC-88
①
②
③
MAXIMUM RATING (Ta=25 ℃)
SYMBOL
RATING
UNIT
VCBO
Collector to Base voltage
PARAMETER
50
V
VEBO
Emitter to Base voltage
10
V
VCEO
Collector to Emitter voltage
50
V
IC
Collector current
100
mA
ICM
Peak Collector current
200
mA
PC
Collector dissipation(Total, Ta=25℃)
150
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55∼+150
℃
MARKING
ISAHAYA ELECTRONICS CORPORATION
⑥ ⑤ ④
.N D D
① ② ③
PRELIMINARY
RT3NDDM
Composite Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25 ℃)
Symbol
Parameter
Limits
Test conditions
Unit
Min
Typ
Max
50
-
-
V
-
-
0.1
μA
80
-
-
-
V(BR)CEO
Collector to Emitter break down voltage
ICBO
Collector cut off current
VCB =50V,IE=0
hFE
DC forward current gain
VCE=5V,IC=10mA
VCE(sat)
Collector to Emitter saturation voltage
IC=10mA,IB=0.5mA
-
0.1
0.3
V
VI(ON)
Input on voltage
VCE=0.2V,IC=5mA
-
0.7
1.1
V
VI(OFF)
Input off voltage
VCE=5V,IC=100μA
0.5
0.6
-
V
IC=100μA,RBE=∞
R1
Input resistor
-
1.5
2.2
2.9
kΩ
R2/R1
Resistor ratio
-
17
22
26
-
fT
Gain band width product
VCE=6V,IE=-10mA
-
200
-
MHZ
TYPICAL CHARACTERISTICS ( Tr1,Tr2 )
INPUT ON VOLTAGE
VS. COLLECTOR CURRENT
10
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
1000
VCE=5V
DC FORWARD CURRENT GAIN
INPUT ON VOLTAGE VI(ON)(V)
VCE=0.2V
1
0.1
100
10
1
10
100
COLLECTOR CURRENT IC(mA)
1
10
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT
VS. INPUT OFF VOLTAGE
1000
COLLECTOR CURRENT IC(mA)
VCE=5V
100
10
0.0
0.4
0.8
1.2
1.6
2.0
INPUT OFF VOLTAGE VI(OFF)(V)
ISAHAYA ELECTRONICS CORPORATION
100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
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herein.
·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
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Jan.2003