PANJIT MMDT2222AT/R13

MMDT2222A
DUAL SURFACE MOUNT NPN TRANSISTORS
This device contains two electrically-isolated 2N2222A NPN transistors.
The two transistors have well matched hFE and are encapsulated in an
ultra-small SOT-363 (SC70-6L) package. This device is ideal for portable
applications where board space is at a premium.
SOT- 363
4
5
FEATURES
6
3
Electrically Isolated Dual NPN Switching Transistor
2
Lead-Free Plating (100% matte tin finish)
1
6
5
4
1
2
3
APPLICATIONS
General Purpose Amplifier Applications
Hand-Held Computers, PDAs
Device Marking Code: M2A
MAXIMUM RATINGS
TJ = 25°C Unless otherwise noted
Rating
Symbol
Value
Units
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
V CEO
40
V
Emitter-Base Voltage Voltage
VEB
6.0
V
Collector Current
IC
600
mA
Total Power Dissipation (Note 1)
PD
200
mW
Operating Junction Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Symbol
Value
Units
R thja
625
°C/W
Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
1/2/2006
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MMDT2222A
ELECTRICAL CHARACTERISTICS (Each Transistor) TJ = 25°C Unless otherwise noted
Parameter
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage V (BR)CEO I C = 10mA
40
-
-
V
Collector-Base Breakdown Voltage V (BR)CBO I C = 10uA
75
-
-
V
V (BR)EBO I E = 10uA
6.0
-
-
V
Emitter-Base Breakdown Voltage
Symbol
Conditions
Collector Cutoff Current
ICEX
VCE= 60V, V EB= 3.0V
-
-
10
nA
Base Cutoff Current
IBL
V CE= 60V, V EB= 3.0V
-
-
20
nA
I C = 0.1mA, V CE= 10V
35
-
-
I C = 1.0mA, V CE= 10V
50
-
-
I C = 10mA, V CE= 10V
75
-
-
50
-
-
I C = 150mA, V CE= 10V
100
-
300
I C = 500mA, V CE= 10V
40
-
-
I C = 150mA, V CE= 1.0V
35
-
-
I C = 150mA, I B = 15mA
-
-
0.3
V
I C = 500mA, I B = 50mA
-
-
1.0
V
I C = 150mA, I B = 15mA
0.6
-
1.2
I C = 500mA, I B = 50mA
-
-
2.0
300
-
-
MHz
DC Current Gain (Note 2)
h FE
Collector-Emitter Saturation
Voltage (Note 2)
VCE(SAT)
Base-Emitter Saturation Voltage
(Note 2)
VBE(SAT)
Gain-Bandwidth Product
fT
IC=10mA, VCE=10V, TJ =-55C
V CE= 20V, I C= 20mA
f = 100MHz
-
V
Collector-Base Capacitance
CCBO
VCB= 10V, f =1.0MHz
-
-
8.0
pF
Emitter-Base Capacitance
CEBO
VEB = 0.5V, f =1.0MHz
-
-
25
pF
-
-
10
ns
-
-
25
ns
-
-
225
ns
-
-
60
ns
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
VCC = 30V, I C=150mA
VBE(off) = -0.5V, IB1= 15mA
V CC= 30V, I C=150mA
I B1= I B2= 15mA
Note 2. Short duration test pulse used to minimize self-heating
1/2/2006
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MMDT2222A
CHARACTERISTICS CURVES (Each Transistor) TJ = 25°C Unless otherwise noted
350
0.8
TJ = 150° C
300
0.6
250
TJ = 100° C
V BE (on)
TJ = 25° C
150
TJ = 100° C
0.5
200
hFE
TJ = 25° C
0.7
0.4
TJ = 150° C
0.3
100
0.2
VCE = 10V
50
VCE = 10V
0.1
0
0.0
0.1
1
10
100
1000
0.1
1
Collector Current, IC (mA)
100
1000
Collector Current, IC (mA)
Fig. 1. hFE vs. Ic
Fig. 2. VBE vs. Ic
1.2
500
450
TJ = 150 °C
350
0.8
V BE (sat) (V)
IC/IB = 10
300
IC/IB = 10
1.0
400
V CE (sat) (mV)
10
250
200
150
100
TJ = 25 °C
0.6
TJ = 150 °C
0.4
0.2
50
TJ = 100 °C
TJ = 25 °C
0
0.0
0.1
1
10
100
1000
0.1
1
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. VCE(sat) vs. Ic
Fig. 4. VBE(sat) vs. Ic
1000
100
Capacitance (pF
f=1 MHz
CIB (EB)
10
COB (CB)
1
0.1
1
10
100
Reverse Voltage, V R (V)
Fig. 5. Capacitances
1/2/2006
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MMDT2222A
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
MMDT2222A T/R7 - 3,000 units per 7 inch reel
MMDT2222A T/R13 -10,000 units per 13 inch reel
Copyright PanJit International, Inc 2005
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation
herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
system s. Pan Jit does not convey any license under its patent rights or rights of others.
1/2/2006
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