UNISONIC TECHNOLOGIES CO., LTD DTD143E NPN EPITAXIAL SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN RESISTORS) 3 FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. * Only the on / off conditions need to be set for operation, making device design easy. SOT-23 3 2 OUT 1 SOT-323 EQUIVALENT CIRCUIT R1 1 2 *Pb-free plating product number:DTD143EL IN R2 GND OUT IN GND ORDERING INFORMATION Order Number Normal Lead Free Plating DTD143E-AE3-6-R DTD143EL-AE3-6-R DTD143E-AL3-6-R DTD143EL-AL3-6-R DTD143EL-AE3-6-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Plating Package SOT-23 SOT-323 Pin Assignment 1 2 3 G I O G I O Packing Tape Reel Tape Reel (1) R: Tape Reel (2) refer to Pin Assignment (3) AE3: SOT-23, AL3: SOT-323 (4) L: Lead Free Plating, Blank: Pb/Sn MARKING DE3 www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-084,A DTD143E NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC 50 V Input Voltage VIN -10 ~ +30 V Output Current IOUT 500 mA Power Dissipation PD 200 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL SPECIFICATIONS (Ta=25°C) PARAMETER SYMBOL VIN(OFF) Input Voltage VIN(ON) Output Voltage VOUT(ON) Input Current IIN Output Current IOUT(OFF) DC Current Gain GIN Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT * Transition frequency of the device TEST CONDITIONS VCC =5V, IOUT =100µA VOUT =0.3V, IOUT =20mA IOUT/IIN =50mA/2.5mA VIN=5V VCC =50V, VIN =0V VOUT =5V, IOUT =50mA VCE =10V, IE =−50mA, f=100MHz * UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX 0.5 UNIT 0.1 0.3 1.8 0.5 V mA µA 4.7 1 200 6.11 1.2 KΩ 3 47 3.29 0.8 V MHz 2 of 3 QW-R206-084,A DTD143E NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTIC Input Voltage vs. Output Current (ON Characteristics) 100 Output Current vs. Input Voltage (OFF Characteristics) 10m 5m VOUT=0.3V 10 Ta=-40℃ 25℃ 5 100℃ 2 1 500m 200m 100m 500μ1m 2m 50μ 100μ 50μ 20μ 10μ 5μ 2μ 1μ 5m 10m20m 50m100m200m 500m 0 1K 1.5 2.0 1 2.5 3.0 Ta=100℃ 25℃ -40℃ 100 50 20 10 5 2 5m 10m20m 50m100m200m500m Output Current, IOUT (A) lOUT/lIN=20 500m Output Voltage, VOUT(ON) (V) DC Current Gain, GI 1.0 Output Voltage vs. Output Current VOUT=5V 1 500μ1m 2m 0.5 Input Voltage, VI(OFF) (V) DC Current Gain vs. Output Current 200 Ta=100℃ 25℃ -40℃ 200μ Output Current, IOUT (A) 500 VCC=5V 2m 1m 20 Output Current, IOUT (A) Input Voltage, VIN (ON) (V) 50 Ta=100℃ 25℃ -40℃ 200m 100m 50m 20m 10m 5m 2m 1m 500μ1m 2m 5m 10m 20m 50m100m200m500m Output Current, IOUT (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-084,A