UTC-IC UG8JL-AL5-5-R

UNISONIC TECHNOLOGIES CO., LTD
UG8J
NPN EPITAXIAL SILICON TRANSISTOR
EMITTER COMMON (DUAL
DIGITAL TRANSISTORS)
FEATURES
* Two DTC143Z chips in a SOT-353 package.
* Mounting cost and area can be cut in half.
3
2
1
5
4
STRUCTURE
* Epitaxial planar type
* NPN silicon transistor
(Built-in resistor type)
SOT-353
*Pb-free plating product number: UG8JL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
UG8J-AL5-0-R
UG8J-AL5-0-R
UG8JL-AL5-0-R
Package
SOT-353
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Plating
1
B1
Pin Assignment
2
3
4
E1,E2 B2
C2
5
C1
Packing
Tape Reel
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) AL5: SOT-353
(4) L: Lead Free Plating, Blank: Pb/Sn
MARKING INFORMATION
UG8J
Lead Plating
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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UG8J
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER
SYMBOL
VCC
Supply Voltage
Input Voltage
UNIT
V
IOUT
IC(MAX)
RATINGS
50
30
-5
100
100
PD
150 (Note1)
mW
TJ
TSTG
+150
-40 ~ +150
℃
℃
VIN
Output Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
mA
Note 1. *120mW per element must not be exceeded.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Transition Frequency
Input Resistance
Resistance Ratio
Note * Transition frequency of the device.
SYMBOL
VI(OFF)
VI(ON)
VO(ON)
IIN
IO(OFF)
GI
fT
R1
R2/R1
TEST CONDITIONS
VCC=5V, IOUT=100µA
VOUT=0.3V, IOUT=5mA
IOUT=5mA, IIN=0.25mA
VIN=5V
VCC=50V, VIN=0V
VOUT=5V, IOUT=10mA
VCE=10V, IE=-5mA, f=100MHz*
MIN
1.3
TYP MAX UNIT
0.5
V
0.1
0.3
1.8
0.5
V
mA
µA
80
3.29
8
250
MHz
4.7 6.11 KΩ
10
12
EQUIVALENT CIRCUIT (The following characteristic apply to both DTr1 and DTr2)
(3)
R1
DTr2
R2
(2)
(1)
R1
DTr1
R2
(4)
(5)
R1 =4.7kΩ
R2 =4.7kΩ
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Input Voltage vs. Output Current
(ON Characteristics)
100
Input Voltage, VI(ON) (V)
Output current, I OUT (A)
VOUT=0.3V
50
20
10
5
2
Output Current vs. Input Voltage
(OFF Characteristics)
Ta=-20℃
25℃
100℃
1
500m
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
10m
5m
2m
1m
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
Output Current, I OUT (A)
1k
DC Current Gain, GI
500
200
Ta=100℃
25℃
-20℃
VOUT=5V
100
50
20
10
5
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Output Current, I OUT (A)
Outptut Voltage, VO(ON) (V)
DC Current Gain vs. Output Current
VCC=5V
Ta=100℃
25℃
-20℃
0.5
1 1.5 2.0 2.5 3.0
Input Voltage, VI(OFF) (V)
Output Voltage vs. Output Current
1
Ta=100℃
IOUT/I IN=20
500m
25℃
200m
-20℃
100m
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Output Current, I OUT (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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