ONSEMI NTTD4401F

NTTD4401F
FETKYPower MOSFET
and Schottky Diode
−20 V, −3.3 A P−Channel with 20 V,
1.0 A Schottky Diode, Micro8 Package
The FETKY product family incorporates low RDS(on), true logic
level MOSFETs packaged with industry leading, low forward drop, low
leakage Schottky Barrier Diodes to offer high efficiency components in
a space saving configuration. Independent pinouts for TMOS and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
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MOSFET PRODUCT SUMMARY
ID Max
70 m @ −4.5 V
−3.3 A
100 m @ −2.7 V
−2.7 A
−20 V
Features
• Low VF and Low Leakage Schottky Diode
• Lower Component Placement and Inventory Costs along with Board
•
RDS(on) Typ
V(BR)DSS
Space Savings
Logic Level Gate Drive – Can be Driven by Logic ICs
SCHOTTKY DIODE SUMMARY
VR Max
IF Max
VF Max
20 V
2.0 A
600 mV @ IF = 2.0 A
Applications
•
•
•
•
Buck Converter
Synchronous Rectification
Low Voltage Motor Control
Load Management in Battery Packs, Chargers, Cell Phones, and
other Portable Products
A
S
G
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
−10
V
ID
3.3
A
Rating
Continuous Drain
Current (Note 1)
Power Dissi
Dissipation
ation
(Note 1)
TA = 25°C
TA = 100°C
Steady
State
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
25 C
PD
1.42
W
TA = 25°C
ID
2.4
A
PD
0.78
Pulsed Drain
Current
t = 10 s
TA = 25°C
25 C
Operating Junction and Storage
Temperature
Single Pulse Drain−to−Source
Avalanche Energy
Starting TA = 25°C (t 10 s)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
1.5
IDM
TJ, TSTG
W
10
A
−55 to 150
August, 2004 − Rev. 3
8
EAS
150
mJ
TL
260
°C
1
SCHOTTKY DIODE
Micro8
CASE 846A
1
MARKING DIAGRAM
& PIN CONNECTIONS
ANODE
1
ANODE
2
SOURCE
3
GATE
4
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.172 in sq).
 Semiconductor Components Industries, LLC, 2004
P−Channel MOSFET
2.1
TA = 100°C
Power Dissi
Dissipation
ation
(Note 2)
C
D
YWW
BG
8
CATHODE
7
CATHODE
6
DRAIN
5
DRAIN
(Top View)
Y
= Year
WW = Work Week
BG = Device Code
ORDERING INFORMATION
Device
Package
Shipping†
NTTD4401FR2
Micro8
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTTD4401F/D
NTTD4401F
SCHOTTKY DIODE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Rating
Value
Unit
Peak Repetitive Reverse Voltage
V
20
V
Average Forward Current (Rated VR, TA = 100°C)
IO
1.0
A
Peak Repetitive Forward Current (Note 3)
IFRM
2.0
A
Non−Repetitive Peak Surge Current (Note 4)
IFSM
20
A
THERMAL RESISTANCE RATINGS
FET
Rating
Schottky
Max
Symbol
Unit
Junction−to−Ambient – Steady State (Note 5)
RθJA
88
135
°C/W
Junction−to−Ambient – Steady State (Note 6)
RθJA
160
250
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V
−20
−
−
V
Zero Gate Voltage Drain Current (Note 7)
IDSS
VGS = 0 V, VDS = −16 V
−
−
−1.0
A
VGS = 0 V, TJ = 125°C, VDS = −16 V
−
−
−25
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±10 V
−
−
±100
nA
ON CHARACTERISTICS
VGS(TH)
VGS = VDS, ID = −250 A
−0.5
−
−1.5
V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
−
−
2.5
−
mV/°C
Drain−to−Source On Resistance
RDS(on)
( )
VGS = −4.5 V, ID = −3.3 A
−
70
90
m
VGS = −2.5 V, ID = −1.2 A
−
100
150
VDS = −10 V, ID = −2.7 A
−
4.2
−
S
−
550
750
pF
−
200
300
−
50
175
Gate Threshold Voltage
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
VGS = 0 V,
V f = 1.0
1 0 MHz,
MH
VDS = −16 V
QG(TOT)
nC
−
10
18
−
1.5
3.0
QGD
−
5.0
10
td(ON)
−
11
20
−
35
65
−
33
60
−
29
55
−
−0.88
−1.0
V
−
37
50
ns
−
16
−
−
21
−
−
0.025
0.05
Gate−to−Source Gate Charge
QGS
Gate−to−Drain “Miller’’ Charge
VGS = −4.5
45V
V, VDS = −16
16 V,
V
ID = −3.3 A
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
tr
td(OFF)
Fall Time
VGS = −4.5 V, VDD = −10 V,
ID = −3.3 A, RG = 6.0 tf
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
3.
4.
5.
6.
7.
VGS = 0 V, IS = −2.0 A
VGS = 0 V
V, dIS/dt = 100 A/
A/s,
IS = −3.3 A
QRR
−
Rated VR, square wave, 20 kHz, TA = 105°C.
Surge applied at rated load conditions, half−wave, single phase, 60 Hz.
Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq).
Body diode leakage current.
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2
nC
NTTD4401F
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Reverse Breakdown Voltage
BV
IR = 1.0 mA
Reverse Leakage Current
IR
Forward Voltage
VF
VR = 20 V
IF = 1
1.0
0A
IF = 2
2.0
0A
Voltage Rate of Change
dV/dt
VR = 20 V
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3
Max
Unit
20
−
−
V
TA = 25°C
−
−
0.05
mA
TA = 125°C
−
−
10
TA = 25°C
−
−
0.5
TA = 125°C
−
−
0.39
TA = 25°C
−
−
0.6
TA = 125°C
−
−
0.53
−
10,000
−
V
V/s
NTTD4401F
TYPICAL ELECTRICAL CHARACTERISTICS
5
4
VGS = −10 V
VGS = −4.5 V
VGS = −2.5 V
3
TJ = 25°C
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
VGS = −2.1 V
VGS = −1.9 V
2
VGS = −1.7 V
1
VGS = −1.5 V
4
3
2
TJ = 25°C
1
TJ = 100°C
0
2
4
6
8
1
10
3
2.5
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 1. On−Region Characteristics
0.15
0.1
0.05
0
2
4
8
6
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.12
TJ = 25°C
0.1
VGS = −2.7 V
0.08
VGS = −4.5 V
0.06
0.04
1
1.5
2
2.5
3
3.5
4
4.5
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
1000
VGS = 0 V
ID = −3.3 A
VGS = −4.5 V
TJ = 125°C
−IDSS, LEAKAGE (nA)
100
1.2
1
0.8
0.6
−50
2
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TJ = 25°C
1.4
1.5
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.2
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 55°C
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
VDS > = −10 V
TJ = 100°C
10
TJ = 25°C
1
0.1
0.01
−25
0
25
75
50
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
0
Figure 5. On−Resistance Variation with
Temperature
4
8
12
16
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
20
NTTD4401F
C, CAPACITANCE (pF)
VDS = 0 V
1200
VGS = 0 V
Ciss
TJ = 25°C
900
Crss
Ciss
600
300
Coss
Crss
0
10
5
0
−VGS −VDS
5
10
15
20
5
20
16
4
14
3
Q1
10
Q2
8
2
6
1
ID = −3.3 A
TJ = 25°C
VDS
2
0
0
2
4
6
8
12
10
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
td (off)
t, TIME (ns)
tr
tr
tf
td (on)
10
tf
td (off)
VDD = −10 V
ID = −3.3 A
VGS = −4.5 V
td (on)
1.0
10
10
1.0
14
Qg, TOTAL GATE CHARGE (nC)
VDD = −10 V
ID = −1.2 A
VGS = −2.7 V
100
4
0
Figure 7. Capacitance Variation
t, TIME (ns)
12
VGS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
18
QT
100
RG, GATE RESISTANCE ()
1.0
10
RG, GATE RESISTANCE ()
100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
−IS, SOURCE CURRENT (AMPS)
2
1.6
VGS = 0 V
TJ = 25°C
di/dt
IS
trr
1.2
ta
tb
TIME
0.8
0.25 IS
tp
IS
0.4
0
0.4
0.5
0.6
0.7
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1500
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
0.9
1
Figure 12. Diode Reverse Recovery Waveform
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage
vs. Current
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5
NTTD4401F
Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
1
D = 0.5
0.2
0.1
Normalized to R∅ja at Steady State (1 inch pad)
0.1
0.0125 Ω 0.0563 Ω
0.110 Ω
0.273 Ω
0.113 Ω
0.436 Ω
2.93 F
152 F
261 F
0.05
0.02
0.01
0.021 F
0.137 F
1.15 F
Single Pulse
0.01
1E−03
1E−02
1E−01
1E+00
1E+03
1E+02
1E+03
t, TIME (s)
Figure 13. FET Thermal Response
10
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
TJ = 125°C
1.0
85°C
25°C
−40 °C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
TJ = 125°C
85°C
1.0
25°C
0.1
0
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2
0.4
0.6
0.8
1.0
1.2
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 14. Typical Forward Voltage
Figure 15. Maximum Forward Voltage
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6
1.4
NTTD4401F
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
IR, MAXIMUM REVERSE CURRENT (AMPS)
IR, REVERSE CURRENT (AMPS)
1E−2
TJ = 125°C
1E−3
85°C
1E−4
1E−5
25°C
1E−6
1E−7
1E−1
TJ = 125°C
1E−2
1E−3
1E−4
25°C
1E−5
1E−6
0
5.0
15
10
20
0
5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 17. Maximum Reverse Current
IO , AVERAGE FORWARD CURRENT (AMPS)
1000
100
10
10
15
1.6
dc
1.2
SQUARE WAVE
1.0
Ipk/Io = 0.8
Ipk/Io = 5.0
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
0
20
FREQ = 20 kHz
1.4
20
VR, REVERSE VOLTAGE (VOLTS)
40
60
0.6
dc
SQUARE
WAVE
Ipk/Io = Ipk/Io = 5.0
0.4
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
0.1
0
0
100
120
Figure 19. Current Derating
0.7
0.5
80
TA, AMBIENT TEMPERATURE (°C)
Figure 18. Typical Capacitance
PFO , AVERAGE POWER DISSIPATION (WATTS)
C, CAPACITANCE (pF)
TYPICAL CAPACITANCE AT 0 V = 170 pF
5.0
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 16. Typical Reverse Current
0
15
10
0.5
1.0
1.5
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 20. Forward Power Dissipation
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7
2.0
140
160
NTTD4401F
PACKAGE DIMENSIONS
Micro8
CASE 846A−02
ISSUE F
−A−
−B−
K
PIN 1 ID
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. 846A−01 OBSOLETE, NEW STANDARD 846A−02.
G
D 8 PL
0.08 (0.003)
M
T B
A
S
S
SEATING
−T− PLANE
0.038 (0.0015)
C
L
J
H
MILLIMETERS
MIN
MAX
2.90
3.10
2.90
3.10
−−−
1.10
0.25
0.40
0.65 BSC
0.05
0.15
0.13
0.23
4.75
5.05
0.40
0.70
DIM
A
B
C
D
G
H
J
K
L
INCHES
MIN
MAX
0.114
0.122
0.114
0.122
−−−
0.043
0.010
0.016
0.026 BSC
0.002
0.006
0.005
0.009
0.187
0.199
0.016
0.028
SOLDERING FOOTPRINT*
8X
1.04
0.041
0.38
0.015
3.20
0.126
6X
8X
4.24
0.167
0.65
0.0256
5.28
0.208
SCALE 8:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
FETKY is a trademark of International Rectifier Corporation.
Micro8 is a trademark of International Rectifier.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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8
For additional information, please contact your
local Sales Representative.
NTTD4401F/D