ONSEMI NTB5405NT4G

NTB5405N
Power MOSFET
40 V, 116 A, Single N−Channel, D2PAK
Features
•
•
•
•
Low RDS(on)
High Current Capability
Low Gate Charge
These are Pb−Free Devices
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Applications
• Electronic Brake Systems
• Electronic Power Steering
• Bridge Circuits
V(BR)DSS
RDS(ON) TYP
ID MAX
(Note 1)
40 V
4.9 mΩ @ 10 V
116 A
N−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
116
A
Continuous Drain
Current − RJC (Note 1)
Steady
State
TC = 100°C
Power Dissipation −
RJC (Note 1)
Steady
State
TC = 25°C
Pulsed Drain Current
TC = 25°C
tp = 10 s
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (VDD = 50 V, VGS = 10 V, IPK = 40 A,
L = 1 mH, RG = 25 )
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
S
82
PD
150
W
IDM
280
A
TJ,
TSTG
−55 to
175
°C
IS
75
A
EAS
800
mJ
TL
260
°C
MARKING
DIAGRAM
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
G
Symbol
Max
Units
Junction−to−Case (Drain) (Note 1)
RθJC
1.0
°C/W
Junction−to−Ambient (Note 2)
RθJA
45
°C/W
Junction−to−Ambient (Note 3)
RθJA
62.5
°C/W
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in2).
3. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
2
3
NTB5405NG
AYWW
D2PAK
CASE 418B
STYLE 2
1
NTB5405N
G
A
Y
WW
= Specific Device Code
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NTB5405NG
Package
Shipping†
D2PAK
50 Units / Rail
(Pb−Free)
NTB5405NT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 2
1
Publication Order Number:
NTB5405N/D
NTB5405N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 A
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V
39
IDSS
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 100°C
10
IGSS
VDS = 0 V, VGS = ±30 V
VGS(TH)
VGS = VDS, ID = 250 A
±100
A
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
1.5
3.5
−7.0
RDS(on)
gFS
V
mV/°C
VGS = 10 V, ID = 40 A
4.9
5.8
VGS = 5.0 V, ID = 15 A
7.0
8.0
VGS = 10 V, ID = 15 A
32
m
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
2700
4000
VGS = 0 V, f = 1.0 MHz,
VDS = 32 V
700
1400
300
600
VGS = 10 V, VDS = 32 V,
ID = 40 A
Total Gate Charge
QG(TOT)
88
Threshold Gate Charge
QG(TH)
3.25
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
pF
nC
9.5
37
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
ns
8.5
VGS = 10 V, VDD = 32 V,
ID = 40 A, RG = 2.5 tf
52
55
70
SWITCHING CHARACTERISTICS, VGS = 5 V (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
ns
19
VGS = 5 V, VDD = 20 V,
ID = 20 A, RG = 2.5 tf
153
32
42
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.82
TJ = 100°C
TBD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
66
VGS = 0 V, dISD/dt = 100 A/s,
IS = 20 A
QRR
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2
V
ns
35
31
113
4. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
1.1
nC
NTB5405N
TYPICAL PERFORMANCE CURVES
125
TJ = 25°C
VGS = 6 V to 10 V
175
VDS ≥ 10 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
200
5.5 V
150
5V
125
4.5 V
100
75
4V
50
25
3.5 V
0
0
1
3
2
5
4
6
7
8
9
100
75
50
0
10
TJ = 125°C
25
TJ = 25°C
TJ = −55°C
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3
4
5
1
2
6
7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.01
ID = 40 A
TJ = 25°C
0.009
0.008
0.007
0.006
0.005
0.004
0.003
3
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 1. On−Region Characteristics
0.01
0.008
0.007
VGS = 5 V
0.006
0.005
VGS = 10 V
0.004
0.003
0.002
15
25
35
45
100000
1.2
1
75
85
95
105 115
VGS = 0 V
10000
1.4
65
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
ID = 40 A
VGS = 10 V
1.6
55
ID, DRAIN CURRENT (AMPS)
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
TJ = 25°C
0.009
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2
8
TJ = 175°C
1000
TJ = 100°C
100
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
10
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTB5405N
TYPICAL PERFORMANCE CURVES
VDS = 0 V VGS = 0 V
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
7000
TJ = 25°C
Ciss
6000
5000
Crss
4000
Ciss
3000
2000
Coss
1000
0
10
Crss
VGS
0
10
VDS
20
12
QT
10
40
30
36
18
QGS
QGD
4
12
2
0
ID = 40 A
TJ = 25°C
0
10
1000
40
td(off)
tr
td(on)
10
1
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
tf
1
10
RG, GATE RESISTANCE (OHMS)
25
20
15
10
5
1
800
1 ms
100 s
10 s
10 ms
100
dc
10
VGS = 20 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
ID = 40 A
700
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
0.5
0.7
0.6
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
0.1
0
90
30
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1
80
VGS = 0 V
TJ = 25°C
35
0
0.4
100
50
70
20
30
40
60
QG, TOTAL GATE CHARGE (nC)
6
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
100
24
6
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VDS = 32 V
ID = 40 A
VGS = 10 V
30
VGS
VDS
8
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
8000
10
600
500
400
300
200
100
0
25
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
175
NTB5405N
TYPICAL PERFORMANCE CURVES
100
D = 0.5
r(t), (°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
Surface−Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
1
10
100
1000
NTB5405N
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
−B−
V
W
4
1
2
A
S
3
−T−
SEATING
PLANE
K
J
G
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
W
H
M
T B
M
N
R
P
U
L
M
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NTB5405N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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7
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NTB5405N/D