RF2373 0 3V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • WLAN LNA/Driver • Low Noise Transmit Power Amplifier • GPS LNA • General Purpose Amplification • CDMA PCS LNA • Driver Amplifier for TX Power Amplifier Product Description The RF2373 is a low noise amplifier with a very high dynamic range designed for WLAN and digital cellular applications. The device functions as an outstanding front end low noise amplifier or driver amplifier in the transmit chain of digital subscriber units where low transmit noise power is a concern. When used as an LNA, the bias current can be set externally. When used as a PA driver, the IC can operate directly from a single cell Li-ion battery and includes a power down feature that can be used to completely turn off the device. The IC is featured in a standard SOT 5-lead plastic package. 1.60 + 0.01 0.15 0.05 0.400 1 2.90 + 0.10 0.950 2.80 + 0.20 3° MAX 0° MIN 1.44 1.04 Dimensions in mm. 0.127 0.45 + 0.10 Optimum Technology Matching® Applied 9 Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS Package Style: SOT 5-Lead Features • Low Noise and High Intercept Point • Adjustable Bias Current • Power Down Control • Single 1.8V to 6.0V Power Supply RF IN 1 5 GND2 • 400MHz to 3GHz Operation • Extremely Small SOT 5-Lead Package GND1 2 BIAS 3 4 RF OUT Ordering Information RF2373 3V Low Noise Amplifier/ 3V Driver Amplifier RF2373PCK-414 Fully Assembled Evaluation Board with 5 Sample Parts Functional Block Diagram Rev A5 060907 RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-1 RF2373 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage -0.5 to +6.0 VDC Bias Voltage, VBIAS <VCC VDC Input RF Level +15 (see note) dBm 32 mA Current Drain, ICC Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C NOTE: Exceeding any one or a combination of the above maximum rating limits may cause permanent damage. Input RF transients to +15dBm will not harm the device. For sustained operation at inputs >+10dBm, a small dropping resistor of 10Ω is recommended in series with the VCC. Parameter Min. Specification Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit 25°C, VCC =3.3V, at typical frequencies unless otherwise specified Overall Supply Voltage (VCC) Bias Voltage (VBIAS) RF Frequency Range Power Down Current Isolation Current Drain Condition 2.7 2.7 3.3 3.3 800 to 2500 5.0 5.0 10 (LNA) (Driver) 8 12 IP2 23 14 18 55 19 23 V V MHz μA dB mA mA dBm VBIAS =0V Cellular Low Noise Amplifier Frequency Gain Noise Figure IIP3 IP1dB Input VSWR Output VSWR 820 19.5 -3 -13 880 21.5 1.1 -1 -11 2.0 4.0 960 23.5 1.3 MHz dB dB dBm dBm ICC =10mA 2.5 4.5 GPS Low Noise Amplifier Frequency Gain Noise Figure IIP3 IP1dB Input VSWR Output VSWR 17.0 3 -7 1575 19.0 1.1 5 -5 1.7 1.6 21.0 1.3 MHz dB dB dBm dBm ICC =10mA 2.2 2.1 PCS Low Noise Amplifier Frequency Range Gain Noise Figure IIP3 IP1dB Input VSWR Output VSWR 4-2 1850 16.0 4 -7 1920 18.0 1.2 6 -5 1.8 1.6 1990 20.0 1.4 MHz dB dB dBm dBm ICC =10mA 2.3 2.1 Rev A5 060907 RF2373 Parameter Specification Min. Typ. Max. Unit Condition W-CDMA Low Noise Amplifier Frequency Range Gain Noise Figure IIP3 IP1dB Input VSWR Output VSWR 1920 15.5 6 -3 2045 17.5 1.2 8 -1 1.8 1.6 2170 19.5 1.4 2450 15.0 1.3 9.5 -3.5 1.7 1.1 2500 17.0 1.5 880 22.0 1.2 21 11 2.0 4.0 960 24.0 1.4 1920 18.5 1.3 23.5 12.5 1.8 1.6 1990 20.5 1.5 2045 17.5 1.3 25.5 16.5 1.8 1.6 2170 20.0 1.5 2450 15.5 1.4 25 12 1.7 1.1 2500 17.5 1.6 MHz dB dB dBm dBm ICC =10mA 2.3 2.1 WLAN Low Noise Amplifier Frequency Gain Noise Figure IIP3 P1dB Input VSWR Output VSWR 2400 13.0 7.5 -5.5 MHz dB dB dBm dBm ICC =10mA 2.2 1.6 Cellular Driver Frequency Gain Noise Figure OIP3 OP1dB Input VSWR Output VSWR 820 20.0 19 9 MHz dB dB dBm dBm ICC =18mA 2.5 4.5 PCS Driver Frequency Range Gain Noise Figure OIP3 OP1dB Input VSWR Output VSWR 1850 16.5 21.5 10.5 MHz dB dB dBm dBm ICC =18mA 2.3 2.1 W-CDMA Driver Frequency Range Gain Noise Figure OIP3 OP1dB Input VSWR Output VSWR 1920 15.0 23.5 14.5 MHz dB dB dBm dBm ICC =18mA 2.3 2.1 WLAN Driver Frequency Gain Noise Figure OIP3 OP1dB Input VSWR Output VSWR Rev A5 060907 2400 13.5 23 10 MHz dB dB dBm dBm ICC =18mA 2.2 1.6 4-3 RF2373 Pin 1 Function RF IN Description Interface Schematic RF input pin. This pin is DC coupled. To Bias Circuit RF OUT RF IN 4-4 2 GND1 3 BIAS 4 RF OUT 5 GND2 Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. This pin is used to control the bias current. An external resistor can be used to set the bias current for any VBIAS voltage. See table with evaluation board schematic. VBIAS Amplifier output pin. This pin is an open-collector output. It must be biased to VCC through a choke or matching inductor. This pin is typically matched to 50Ω with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Rev A5 060907 RF2373 Evaluation Board Schematic C2 22 nF LNA IN 1 5 C1 0.5 pF 2 C6* R1* VPD C3 3 4 L1* Do Not Place LNA OUT C7* VCC * Refer to table for the values C4 100 pF Component Cellular GPS PCS W-CDMA WLAN 900 MHz 1575 MHz 1950 MHz 2140 MHz 2450 MHz L1 (nH) C6 (pF) 3.9 4.3 2.7 1.5 2.7 0.5 2.7 DNP 2.2 DNP C7 (pF) 2.0 1.2 1.0 1.0 1.0 C5 10 nF P1 P1-1 P1-3 1 VPD 2 GND 3 VCC HDR_3 VPD ICC ICC ICC R1 = 300 Ω R1 = 430 Ω R1 = 560 Ω ICC R1 = 1 kΩ ICC R1 = 1.5 kΩ 2.7 3.0 12 16 9 12 7 9 5 6 4 5 3.3 3.6 4.0 4.5 20 25 31 Over Limit 15 19 24 31 11 14 18 23 7 8 10 13 5 6 7 8 5.0 Over Limit Over Limit 29 16 Note: VCC set to 3.3 V. ICC only slightly dependent on VCC. 10 Rev A5 060907 4-5 RF2373 This information pertains to the following charts. Test condition unless otherwise specified: VCC =3.3V, use evaluation board for corresponding frequencies. Collector Current versus VBIAS (R1 = 560 ohms) 35.0 30.0 IC (mA) 25.0 20.0 15.0 10.0 -40°C 5.0 +25°C +85°C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VBIAS (V) 4-6 Rev A5 060907 RF2373 Noise Figure versus Collector Current Gain versus Collector Current LNA 880 MHz LNA 880 MHz 25.0 1.8 1.6 24.5 1.4 Gain (dB) Noise Figure (dB) 24.0 1.2 1.0 0.8 23.5 23.0 0.6 22.5 0.4 -40°C 0.2 -40°C 22.0 +25°C +25°C +85°C +85°C 0.0 21.5 0.0 5.0 10.0 15.0 20.0 25.0 0.0 30.0 5.0 10.0 IC (mA) Noise Figure versus Collector Current 20.0 25.0 30.0 Gain versus Collector Current 1575 MHz 1575 MHz 1.8 20.5 1.6 20.0 1.4 19.5 1.2 19.0 Gain (dB) Noise Figure (dB) 15.0 IC (mA) 1.0 0.8 18.5 18.0 0.6 17.5 0.4 -40°C -40°C 0.2 17.0 +25°C +25°C +85°C +85°C 0.0 16.5 0.0 5.0 10.0 15.0 20.0 25.0 0.0 30.0 5.0 10.0 IC (mA) 15.0 20.0 25.0 30.0 IC (mA) Noise Figure versus Collector Current Gain versus Collector Current 1920 MHz 1920 MHz 19.0 1.8 1.6 18.5 1.4 Gain (dB) Noise Figure (dB) 18.0 1.2 1.0 0.8 17.5 17.0 0.6 16.5 0.4 -40°C 0.2 -40°C 16.0 +25°C +25°C +85°C +85°C 0.0 15.5 0.0 5.0 10.0 15.0 IC (mA) Rev A5 060907 20.0 25.0 30.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 IC (mA) 4-7 RF2373 Noise Figure versus Collector Current Gain versus Collector Current 2025 MHz 2025 MHz 19.5 1.8 1.6 19.0 1.4 Gain (dB) Noise Figure (dB) 18.5 1.2 1.0 0.8 18.0 17.5 0.6 17.0 0.4 -40°C 0.2 -40°C 16.5 +25°C +25°C +85°C +85°C 0.0 16.0 0.0 5.0 10.0 15.0 20.0 25.0 0.0 30.0 5.0 10.0 IC (mA) 15.0 20.0 25.0 30.0 IC (mA) Noise Figure versus Collector Current Gain versus Collector Current 2450 MHz 2450 MHz 2.0 17.5 1.8 17.0 1.6 16.5 16.0 1.2 Gain (dB) Noise Figure (dB) 1.4 1.0 15.5 15.0 0.8 14.5 0.6 14.0 0.4 -40°C -40°C +25°C 0.2 13.5 +25°C +85°C +85°C 0.0 13.0 0.0 5.0 10.0 15.0 IC (mA) 4-8 20.0 25.0 30.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 IC (mA) Rev A5 060907