IRF IRF7410PBF

PD - 96028A
IRF7410PbF
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
VDSS
RDS(on) max
ID
-12V
7mΩ@VGS = -4.5V
-16A
9mΩ@VGS = -2.5V
13mΩ@VGS = -1.8V
-13.6A
-11.5A
Description
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
S
S
S
G
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
1
8
2
7
3
6
4
5
A
D
D
D
D
SO-8
Top View
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
-16
-13
-65
2.5
1.6
20
±8
-55 to +150
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
Max.
Units
50
°C/W
1
8/25/06
IRF7410PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-12
–––
–––
–––
–––
-0.4
55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.006
–––
–––
–––
–––
–––
–––
–––
–––
–––
91
18
25
13
12
271
200
8676
2344
1604
Max. Units
Conditions
–––
V
VGS = 0V, I D = -250µA
––– V/°C Reference to 25°C, I D = -1mA
7
VGS = -4.5V, I D = -16A ‚
mΩ VGS = -2.5V, ID = -13.6A ‚
9
13
VGS = -1.8V, ID = -11.5A ‚
-0.9
V
VDS = VGS , ID = -250µA
–––
S
VDS = -10V, I D = -16A
-1.0
VDS = -9.6V, VGS = 0V
µA
-25
VDS = -9.6V, VGS = 0V, T J = 70°C
-100
nA VGS = -8V
100
VGS = 8V
–––
ID = -16A
–––
nC
VDS = -9.6V
–––
VGS = -4.5V ‚
20
VDD = -6V, VGS = -4.5V
ns
18
ID = -1.0A
407
RD = 6Ω
300
RG = 6Ω ‚
–––
VGS = 0V
–––
pF
VDS = -10V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-65
–––
–––
–––
–––
97
134
-1.2
145
201
A
V
ns
µC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on 1 in square Cu board, t ≤ 10sec.
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7410PbF
100
VGS
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
10
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
100
1
-1.0V
10
-1.0V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
1
0.1
0.1
1
10
0.1
100
-I D , Drain-to-Source Current (A)
100
TJ = 150 ° C
10
TJ = 25 ° C
V DS = -10V
20µs PULSE WIDTH
1.4
1.6
1.8
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 1. Typical Output Characteristics
1.2
10
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
1
1.0
1
2.0
2.0
ID = -16A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7410PbF
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
12000
10000
Ciss
Coss = Cds + Cgd
8000
6000
4000
Coss
Crss
2000
-VGS , Gate-to-Source Voltage (V)
6
14000
0
10
4
3
2
1
100
0
20
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
60
80
100
120
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
40
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
10
TJ = 25 ° C
1
0.1
0.2
0.4
0.6
0.8
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
100us
1ms
10
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
-VSD ,Source-to-Drain Voltage (V)
4
V DS=-9.6V
5
0
1
ID = -16A
1.0
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7410PbF
16
VDS
-ID , Drain Current (A)
VGS
12
RD
D.U.T.
RG
+
VDD
VGS
8
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
td(on)
tr
t d(off)
tf
VGS
0
10%
25
50
75
100
125
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.010
RDS ( on ) , Drain-to-Source On Resistance Ω
( )
(
RDS(on), Drain-to -Source On ResistanceΩ)
IRF7410PbF
0.008
0.006
ID = -16A
0.004
0.002
0.0
2.0
4.0
6.0
8.0
0.02
0.015
VGS = -1.8V
0.01
VGS = -2.5V
0.005
VGS = -4.5V
0
0.0
10.0 20.0 30.0 40.0 50.0 60.0 70.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF7410PbF
700
1.0
600
500
Power (W)
-VGS(th) ( V )
0.8
ID = -250µA
0.6
400
300
200
0.4
100
0
0.2
-75
-50
-25
0
25
50
75
100
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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125
150
0.0001
0.0010
0.0100 0.1000
1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF7410PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information (Lead-Free)
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IRF7410PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2006
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9