TAOS CD74HCT670E

[ /Title
(CD74H
C670,
CD74H
CT670)
/Subject
(HighSpeed
CMOS
Logic
4x4 Register
CD54HC670, CD74HC670,
CD74HCT670
Data sheet acquired from Harris Semiconductor
SCHS195C
High-Speed CMOS Logic
4x4 Register File
January 1998 - Revised October 2003
Features
Description
• Simultaneous and Independent Read and Write
Operations
• Fanout (Over Temperature Range)
- Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
The ’HC670 and CD74HCT670 are 16-bit register files
organized as 4 words x 4 bits each. Read and write address
and enable inputs allow simultaneous writing into one location
while reading another. Four data inputs are provided to store
the 4-bit word. The write address inputs (WA0 and WA1)
determine the location of the stored word in the register.
When write enable (WE) is low the word is entered into the
address location and it remains transparent to the data. The
outputs will reflect the true form of the input data. When (WE)
is high data and address inputs are inhibited. Data acquisition
from the four registers is made possible by the read address
inputs (RA1 and RA0). The addressed word appears at the
output when the read enable (RE) is low. The output is in the
high impedance state when the (RE) is high. Outputs can be
tied together to increase the word capacity to 512 x 4 bits.
• Wide Operating Temperature Range . . . -55oC to 125oC
Ordering Information
• Expandable to 512 Words of n-Bits
• Three-State Outputs
• Organized as 4 Words x 4 Bits Wide
• Buffered Inputs
• Typical Read Time = 16ns for ’HC670 VCC = 5V, CL =
15pF, TA = 25oC
• Balanced Propagation Delay and Transition Times
TEMP. RANGE
(oC)
PACKAGE
CD54HC670F3A
-55 to 125
16 Ld CERDIP
CD74HC670E
-55 to 125
16 Ld PDIP
PART NUMBER
• Significant Power Reduction Compared to LSTTL
Logic ICs
• HC Types
- 2V to 6V Operation
- High Noise Immunity: NIL = 30%, NIH = 30% of VCC
at VCC = 5V
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
VIL= 0.8V (Max), VIH = 2V (Min)
- CMOS Input Compatibility, Il ≤ 1µA at VOL, VOH
CD74HC670M
-55 to 125
16 Ld SOIC
CD74HC670MT
-55 to 125
16 Ld SOIC
CD74HC670M96
-55 to 125
16 Ld SOIC
CD74HCT670E
-55 to 125
16 Ld PDIP
CD74HCT670M
-55 to 125
16 Ld SOIC
CD74HCT670MT
-55 to 125
16 Ld SOIC
CD74HCT670M96
-55 to 125
16 Ld SOIC
NOTE: When ordering, use the entire part number. The suffix 96
denotes tape and reel. The suffix T denotes a small-quantity reel of
250.
Pinout
CD54HC670
(CERDIP)
CD74HC670, CD74HCT670
(PDIP, SOIC)
TOP VIEW
D1 1
16 VCC
D2 2
15 D0
D3 3
14 WA0
RA1 4
13 WA1
RA0 5
12 WE
Q3 6
11 RE
Q2 7
10 Q0
GND 8
9 Q1
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© 2003, Texas Instruments Incorporated
1
CD54HC670, CD74HC670, CD74HCT670
Functional Diagram
D0
D1
D2
D3
WE
15
10
1
9
2
7
3
6
12
Q0
Q1
Q2
Q3
11
RE
RA1
4
5
14
13
RA0
WA0
WA1
WRITE MODE SELECT TABLE
INPUTS
OPERATING
MODE
Write Data
Data Latched
READ MODE SELECT TABLE
WE
DN
INTERNAL
LATCHES
(NOTE 1)
L
L
L
L
H
H
H
X
No Change
INPUTS
OPERATING
MODE
Read
NOTE:
Disabled
1. The Write Address (WA0 and WA1) to the “internal latches” must
be stable while WE is LOW for conventional operation.
RE
INTERNAL
LATCHES
(NOTE 2)
OUTPUT
QN
L
L
L
L
H
H
H
X
(Z)
NOTE:
2. The selection of the “internal latches” by Read Address (RA0 and
RA1) are not constrained by WE or RE operation.
H = High Voltage Level
L = Low Voltage Level
X= Don’t Care
Z = High Impedance “Off” State
2
CD54HC670, CD74HC670, CD74HCT670
Absolute Maximum Ratings
Thermal Information
DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
DC Input Diode Current, IIK
For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Diode Current, IOK
For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
DC Drain Current, per Output, IO
For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA
DC Output Source or Sink Current per Output Pin, IO
For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA
Thermal Resistance (Typical, Note 3)
θJA (oC/W)
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . .
67
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . .
73
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Supply Voltage Range, VCC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
3. The package thermal impedance is calculated in accordance with JESD 51-7.
DC Electrical Specifications
TEST
CONDITIONS
SYMBOL
VI (V)
IO (mA)
High Level Input
Voltage
VIH
-
-
Low Level Input
Voltage
VIL
High Level Output
Voltage
CMOS Loads
VOH
PARAMETER
VCC
(V)
25oC
-40oC TO 85oC -55oC TO 125oC
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
HC TYPES
-
VIH or VIL
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or VIL
Low Level Output
Voltage
TTL Loads
Input Leakage
Current
II
VCC or
GND
-
2
1.5
-
-
1.5
-
1.5
-
V
4.5
3.15
-
-
3.15
-
3.15
-
V
6
4.2
-
-
4.2
-
4.2
-
V
2
-
-
0.5
-
0.5
-
0.5
V
4.5
-
-
1.35
-
1.35
-
1.35
V
6
-
-
1.8
-
1.8
-
1.8
V
-0.02
2
1.9
-
-
1.9
-
1.9
-
V
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-0.02
6
5.9
-
-
5.9
-
5.9
-
V
-
-
-
-
-
-
-
-
-
V
-6
4.5
3.98
-
-
3.84
-
3.7
-
V
-7.8
6
5.48
-
-
5.34
-
5.2
-
V
0.02
2
-
-
0.1
-
0.1
-
0.1
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
0.02
6
-
-
0.1
-
0.1
-
0.1
V
-
-
-
-
-
-
-
-
-
V
6
4.5
-
-
0.26
-
0.33
-
0.4
V
7.8
6
-
-
0.26
-
0.33
-
0.4
V
-
6
-
-
±0.1
-
±1
-
±1
µA
3
CD54HC670, CD74HC670, CD74HCT670
DC Electrical Specifications
(Continued)
TEST
CONDITIONS
PARAMETER
Quiescent Device
Current
25oC
-40oC TO 85oC -55oC TO 125oC
SYMBOL
VI (V)
IO (mA)
VCC
(V)
ICC
VCC or
GND
0
6
-
-
8
-
80
-
160
µA
VIL or VIH
VO =
VCC or
GND
6
-
-
±0.5
-
±5.0
-
±10
µA
Three- State Leakage
Current
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
HCT TYPES
High Level Input
Voltage
VIH
-
-
4.5 to
5.5
2
-
-
2
-
2
-
V
Low Level Input
Voltage
VIL
-
-
4.5 to
5.5
-
-
0.8
-
0.8
-
0.8
V
High Level Output
Voltage
CMOS Loads
VOH
VIH or VIL
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-6
4.5
3.98
-
-
3.84
-
3.7
-
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
6
4.5
-
-
0.26
-
0.33
-
0.4
V
±0.1
-
±1
-
±1
µA
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or VIL
Low Level Output
Voltage
TTL Loads
Input Leakage
Current
Quiescent Device
Current
II
VCC and
GND
0
5.5
-
ICC
VCC or
GND
0
5.5
-
-
8
-
80
-
160
µA
VIL or VIH
VO =
VCC or
GND
5.5
-
-
±0.5
-
±5.0
-
±10
µA
VCC
-2.1
-
4.5 to
5.5
-
100
360
-
450
-
490
µA
Three- State Leakage
Current
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
∆ICC
(Note 4)
NOTE:
4. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.
HCT Input Loading Table
INPUT
UNIT LOADS
WE
0.3
WA0
0.2
WA1
0.4
RE
1.5
DATA
0.15
RA0
0.4
RA1
0.7
NOTE: Unit Load is ∆ICC limit specific in DC Electrical Specifications
Table, e.g., 360µA max. at 25oC.
4
CD54HC670, CD74HC670, CD74HCT670
Prerequisite for Switching Specifications
25oC
PARAMETER
-40oC TO 85oC
-55oC TO 125oC
SYMBOL
VCC (V)
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
tSU, th
2
60
-
-
75
-
-
90
-
-
ns
4.5
12
-
-
15
-
-
18
-
-
ns
6
10
-
-
13
-
-
15
-
-
ns
2
5
-
-
5
-
-
5
-
-
ns
4.5
5
-
-
5
-
-
5
-
-
ns
6
5
-
-
5
-
-
5
-
-
ns
2
80
-
-
100
-
-
120
-
-
ns
4.5
16
-
-
20
-
-
24
-
-
ns
6
14
-
-
17
-
-
20
-
-
ns
2
100
-
-
125
-
-
150
-
-
ns
4.5
20
-
-
25
-
-
30
-
-
ns
6
17
-
-
21
-
-
26
-
-
ns
HC TYPES
Setup Time
Data to WE
Write to WE
Hold Time
Data to WE
Write to WE
Pulse Width WE
Latch Time WE to RA0,
RA1
tH, tW
tW
tLATCH
HCT TYPES
Setup Time
Data to WE
tSU, th
4.5
12
-
-
15
-
-
18
-
-
ns
Hold Time
Data to WE
Write to WE
tH, tW
4.5
5
-
-
5
-
-
5
-
-
ns
Setup Time
Write to WE
tSU
4.5
18
-
-
23
-
-
27
-
-
ns
Pulse Width WE
tW
4.5
20
-
-
25
-
-
30
-
-
ns
tLATCH
4.5
25
-
-
31
-
-
38
-
-
ns
Latch Time WE to RA0,
RA1
Switching Specifications
PARAMETER
HC TYPES
Propagation Delay
Reading Any Word
Write Enable to Output
CL = 50pF, Input tr, tf = 6ns
SYMBOL
TEST
CONDITIONS
tPLH, tPHL
CL = 50pF
tPLH, tPHL
-40oC TO
85oC
25oC
-55oC TO
125oC
VCC (V)
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
2
-
-
195
-
245
-
295
ns
4.5
-
-
39
-
49
-
59
ns
CL = 15pF
5
-
16
-
-
-
-
-
ns
CL = 50pF
6
-
-
33
-
42
-
50
ns
CL = 50pF
2
-
-
250
-
315
-
375
ns
4.5
-
-
50
-
63
-
75
ns
CL = 15pF
5
-
21
-
-
-
-
-
ns
CL = 50pF
6
-
-
43
-
54
-
64
ns
5
CD54HC670, CD74HC670, CD74HCT670
Switching Specifications
PARAMETER
Data to Output
Output Disable Time
Output Enable Time
Output Transition Time
CL = 50pF, Input tr, tf = 6ns (Continued)
-40oC TO
85oC
25oC
-55oC TO
125oC
SYMBOL
TEST
CONDITIONS
VCC (V)
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
tPLH, tPHL
CL = 50pF
2
-
-
256
-
315
-
375
ns
4.5
-
-
50
-
63
-
75
ns
CL = 15pF
5
-
21
-
-
-
-
-
ns
CL = 50pF
6
-
-
43
-
54
-
64
ns
CL = 50pF
2
-
-
150
-
190
-
225
ns
4.5
-
-
30
-
38
-
45
ns
CL = 15pF
5
-
12
-
-
-
-
-
ns
CL = 50pF
6
-
-
26
-
33
-
38
ns
CL = 50pF
2
-
-
150
-
190
-
225
ns
4.5
-
-
30
-
38
-
45
ns
CL = 15pF
5
-
12
-
-
-
-
-
ns
CL = 50pF
6
-
-
26
-
33
-
38
ns
CL = 50pF
2
-
-
75
-
95
-
110
ns
4.5
-
-
15
-
19
-
22
ns
tPLZ, tPHZ
tPZL, tPZH
tTHL, tTLH
6
-
-
13
-
10
-
19
ns
Input Capacitance
CI
CL = 50pF
-
10
-
10
-
10
-
10
pF
Three-State Output
Capacitance
CO
-
-
20
-
20
-
20
-
20
pF
Power Dissipation Capacitance
(Notes 5, 6)
CPD
CL = 15pF
5
-
59
-
-
-
-
-
pF
CL = 50pF
4.5
-
-
40
-
50
-
53
ns
CL = 15pF
5
-
17
-
-
-
-
-
ns
CL = 50pF
4.5
-
-
50
-
63
-
75
ns
CL = 15pF
5
-
21
-
-
-
-
-
ns
CL = 50pF
4.5
-
-
50
-
63
-
75
ns
CL = 15pF
5
-
21
-
-
-
-
-
ns
CL = 50pF
4.5
-
-
35
-
44
-
53
ns
CL = 15pF
5
-
14
-
-
-
-
-
ns
CL = 50pF
4.5
-
-
38
-
48
-
57
ns
CL = 15pF
5
-
16
-
-
-
-
-
ns
tTLH, tTHL
CL = 50pF
4.5
-
-
15
-
19
-
22
ns
Input Capacitance
CI
CL = 50pF
-
10
-
10
-
10
-
10
pF
Three-State Output
Capacitance
CO
-
-
20
-
20
-
20
-
20
pF
Power Dissipation Capacitance
(Notes 5, 6)
CPD
CL = 15pF
5
-
66
-
-
-
-
-
pF
HCT TYPES
Propagation Delay
Reading Any Word
tPHL, tPLH
Write Enable to Output
tPHL, tPLH
Data to Output
tPHL, tPLH
Output Disable Time
Output Enable Time
Output Transition Time
tPLZ, tPHZ
tPZL, tPZH
NOTES:
5. CPD is used to determine the dynamic power consumption, per output.
6. PD = CPD VCC2 fi + ∑ CL VCC2 fO where fi = Input Frequency, fO = Output Frequency, CL = Output Load Capacitance, VCC = Supply
Voltage.
6
CD54HC670, CD74HC670, CD74HCT670
Test Circuits and Waveforms
tWL + tWH =
tfCL
trCL
50%
10%
10%
tf = 6ns
tr = 6ns
tTLH
90%
INVERTING
OUTPUT
tPHL
FIGURE 3. HC TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
tPLH
FIGURE 4. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
trCL
tfCL
VCC
tfCL
GND
1.3V
0.3V
GND
tH(H)
tH(L)
VCC
DATA
INPUT
3V
2.7V
CLOCK
INPUT
50%
tH(H)
tTLH
1.3V
10%
tPLH
10%
GND
tTHL
90%
50%
10%
90%
3V
2.7V
1.3V
0.3V
GND
tTHL
trCL
tWH
FIGURE 2. HCT CLOCK PULSE RISE AND FALL TIMES AND
PULSE WIDTH
INPUT
INVERTING
OUTPUT
GND
NOTE: Outputs should be switching from 10% VCC to 90% VCC in
accordance with device truth table. For fMAX, input duty cycle = 50%.
VCC
90%
50%
10%
1.3V
1.3V
tWL
tf = 6ns
tPHL
1.3V
0.3V
tWH
FIGURE 1. HC CLOCK PULSE RISE AND FALL TIMES AND
PULSE WIDTH
INPUT
2.7V
0.3V
GND
tr = 6ns
DATA
INPUT
50%
tH(L)
3V
1.3V
1.3V
1.3V
GND
tSU(H)
tSU(H)
tSU(L)
tTLH
90%
OUTPUT
tTHL
90%
50%
10%
tTLH
90%
1.3V
OUTPUT
tREM
3V
SET, RESET
OR PRESET
GND
tTHL
1.3V
10%
FIGURE 5. HC SETUP TIMES, HOLD TIMES, REMOVAL TIME,
AND PROPAGATION DELAY TIMES FOR EDGE
TRIGGERED SEQUENTIAL LOGIC CIRCUITS
tPHL
1.3V
GND
IC
CL
50pF
GND
90%
tPLH
50%
IC
tSU(L)
tPHL
tPLH
I
fCL
3V
NOTE: Outputs should be switching from 10% VCC to 90% VCC in
accordance with device truth table. For fMAX, input duty cycle = 50%.
tREM
VCC
SET, RESET
OR PRESET
tfCL = 6ns
CLOCK
50%
50%
tWL
CLOCK
INPUT
tWL + tWH =
trCL = 6ns
VCC
90%
CLOCK
I
fCL
CL
50pF
FIGURE 6. HCT SETUP TIMES, HOLD TIMES, REMOVAL TIME,
AND PROPAGATION DELAY TIMES FOR EDGE
TRIGGERED SEQUENTIAL LOGIC CIRCUITS
7
CD54HC670, CD74HC670, CD74HCT670
Test Circuits and Waveforms
6ns
(Continued)
6ns
OUTPUT
DISABLE
90%
50%
10%
OUTPUTS
ENABLED
2.7
1.3
OUTPUT HIGH
TO OFF
50%
OUTPUTS
DISABLED
FIGURE 7. HC THREE-STATE PROPAGATION DELAY
WAVEFORM
OTHER
INPUTS
TIED HIGH
OR LOW
OUTPUT
DISABLE
IC WITH
THREESTATE
OUTPUT
GND
1.3V
tPZH
90%
OUTPUTS
ENABLED
OUTPUTS
ENABLED
0.3
10%
tPHZ
tPZH
90%
3V
tPZL
tPLZ
OUTPUT LOW
TO OFF
50%
OUTPUT HIGH
TO OFF
6ns
GND
10%
tPHZ
tf
OUTPUT
DISABLE
tPZL
tPLZ
OUTPUT LOW
TO OFF
6ns
tr
VCC
1.3V
OUTPUTS
DISABLED
OUTPUTS
ENABLED
FIGURE 8. HCT THREE-STATE PROPAGATION DELAY
WAVEFORM
OUTPUT
RL = 1kΩ
CL
50pF
VCC FOR tPLZ AND tPZL
GND FOR tPHZ AND tPZH
NOTE: Open drain waveforms tPLZ and tPZL are the same as those for three-state shown on the left. The test circuit is Output RL = 1kΩ to
VCC, CL = 50pF.
FIGURE 9. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT
8
PACKAGE OPTION ADDENDUM
www.ti.com
9-Oct-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
CD54HC670F3A
ACTIVE
CDIP
J
16
1
TBD
A42 SNPB
N / A for Pkg Type
CD74HC670E
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HC670EE4
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HC670M
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC670M96
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC670M96E4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC670M96G4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC670ME4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC670MG4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC670MT
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC670MTE4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC670MTG4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT670E
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HCT670EE4
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HCT670M
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT670M96
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT670M96E4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT670M96G4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT670ME4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT670MG4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT670MT
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT670MTE4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT670MTG4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
Package
Drawing
Pins Package Eco Plan (2)
Qty
(1)
Lead/Ball Finish
MSL Peak Temp (3)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
9-Oct-2007
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Mar-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
CD74HC670M96
SOIC
D
16
2500
330.0
16.4
6.5
10.3
2.1
8.0
16.0
Q1
CD74HCT670M96
SOIC
D
16
2500
330.0
16.4
6.5
10.3
2.1
8.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Mar-2008
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CD74HC670M96
SOIC
D
16
2500
333.2
345.9
28.6
CD74HCT670M96
SOIC
D
16
2500
333.2
345.9
28.6
Pack Materials-Page 2
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