VISHAY IL388DAA_06

IL388DAA
Vishay Semiconductors
Linear Optocoupler, PCMCIA package
Features
• 2.3 mm High SMD package
• High sensitivity (K1) at low operating LED RoHS
COMPLIANT
current
• Couples AC and DC signals
e3
• Low input-output capacitance
• Isolation test voltage, 2130 VDC
• Low distortion, below - 80 db (typical)
• 0.4 mm internal insulation thickness
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
K 1
K2
8 C2
A 2
7 B2
B1 3
6 N.C
C1 4
K1
5 N.C
i179085
ambient temperature changes. Thus one can control
the output diode current optically by controlling the
input photodiode current.
The IL388DAA is designed to be part of the DAA2000
kit which consists of one DL207DAA, one
DM207DAA, and two IL388DAAs.
The DL207DAA and DM207DAA ICs provide the drivers and receivers for the IL388DAA as well as all
other telephone termination functions.
• CSA 93751
Applications
• Optical DAA for V.90 FAX/Modem
• PCMCIA cards
• Digital telephone line isolation
Description
The IL388DAA Linear Optocoupler consist of an
IRLED optically coupled to two photodiodes. The
emitter is located such that both photodiodes receive
approximately an equal amount of infrared light. The
diodes produce a proportional amount of photocurrent. The ratio of the photocurrent stays constant with
high accuracy when either the LED current or the
Order Information
Part
IL388DAA
Remarks
Couples AC and DC signals, SOP-8
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
VR
≤ 3.0
V
Forward current
IF
≤ 30
mA
Surge current pulse width < 10 µs
IPK
≤ 150
mA
Pdiss
≤ 150
mW
≤ 2.0
mW/°C
Tj
≤ 100
°C
Power dissipation
Test condition
Derate linearly from 25 °C
Junction temperature
Document Number 83723
Rev. 1.4, 11-Aug-06
Unit
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IL388DAA
Vishay Semiconductors
Output
Parameter
Test condition
Symbol
Value
VR
≤ 15
V
Pdiss
≤ 50
mW
≤ 0.65
mW/°C
≤ 100
°C
Reverse voltage
Power dissipation
Derate linearly from 25 °C
Tj
Junction temperature
Unit
Coupler
Parameter
Test condition
Symbol
Value
Unit
VISO
≤ 2130
VDC
Pt
≤ 250
mW
≤ 2.8
mW/°C
Isolation test voltage
Total package power dissipation
Derate linearly from 25 °C
Storage temperature
Tstg
- 40 to + 150
°C
Operating temperature
Tamb
0 to + 75
°C
≤ 10
Lead soldering time at 260 °C
Isolation resistance
s
VIO = 500, Tamb = 25 °C
RIO
≥
1012
Ω
VIO = 500, Tamb = 100 °C
RIO
≤ 1011
Ω
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Forward voltage
IF = 10 mA
Reverse current
VR = 3.0 V
VF temperature coefficient
Junction capacitance
VF = 0 V, f = 1.0 MHz
Dynamic resistance
Symbol
Min
VF
Typ.
Max
Unit
1.8
2.1
V
10
IR
0.01
ΔVF/Δ °C
TBD
mV/°C
Cj
15
pF
ΔVF/ΔIF
6.0
Ω
µA
Output
Parameter
Junction capacitance
Test condition
VF = 0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
Cj
12
pF
BW (-3 db)
1.0
MHz
45
Deg.
350
ns
AC Characteristics
photovoltaic mode
Frequency response
IP1 = 25 A Modulation current
ΔIP1 = ± 6.0 µA
Phase response
IP1 = 25 A Modulation current
ΔIP1 = ± 6.0 µA
Rise time
IP1 = 25 A Modulation current
ΔIP1 = ± 6.0 µA
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tr
Document Number 83723
Rev. 1.4, 11-Aug-06
IL388DAA
Vishay Semiconductors
Coupler
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Capacitance (input-output)
VF = 0 V, f = 1.0 MHz
CIO
1.0
pF
Common mode capacitance
VF = 0 V, f = 1.0 MHz
CCM
0.5
pF
K1
Coupled characteristics
K1
IF = 2.0 mA, VD = 0 V
THD
f0 = 316, IPI = 35 µA, VD = 0 V
K3 = K2/K1
IF = 2.0 mA, VD = 0 V
0.007
- 79
0.70
db
1.30
Package Dimensions in Inches (mm)
R 0.010 (0.25)
0.336 (8.4)
0.225 (5.7)
0.215 (5.5) ± 0.010 (± 0.25)
0.050 (1.27)
0.014 (0.36)
Pin One ID
0.036 (0.91)
0.266 (6.76)
0.356 (9.04)
0.230 (5.8)
0.220 (5.6)
0.045 (1.14)
0.291 (7.28)
± 0.010 (0.250)
0.015 (0.38)
± 0.002 (0.05)
ISO Method A
0.042 (1.05)
Ref.
0.047 (1.19)
± 0.002 (0.05)
40°
0.091 (2.3)
0.083 (2.1)
0.043 (1.09)
0.033 (0.83)
i178013
0.050 (1.25)
typ.
Document Number 83723
Rev. 1.4, 11-Aug-06
0.016 (0.41)
typ.
10° typ.
0.006 (0.15)
typ.
3° - 7 °
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IL388DAA
Vishay Semiconductors
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Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
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respectively
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substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
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damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 83723
Rev. 1.4, 11-Aug-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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