SFH6943 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, SOT223/10, Quad Channel Features • • • • • • • • • Transistor Optocoupler in SOT223/10 Package End Stackable, 1.27 mm Spacing Low Current Input Very High CTR, 150 % Typical at IF = 1 mA, VCE = 5 V Good CTR Linearity Versus Forward Current Minor CTR Degradation High Collector-Emitter Voltage, VCEO=70 V Low Coupling Capacitance High Common Mode Transient Immunity • Isolation Test Voltage: 1768 VRMS Agency Approvals • UL File #E76222 System Code V • CSA 93751 Applications Telecommunication SMT PCMCIA Instrumentation A1 A2 Com. C3 A4 10 E1 9 E2 8 Com. C 7 E3 6 E4 A5 i179077 output. The device consists of four phototransistors as detectors. Each channel is individually controlled. The optocoupler is housed in a SOT223/10 package. All the cathodes of the input LEDs and all the collectors of the output transistors are common enabling a pin count reduction from 16 pins to 10 pins-a significant space savings as compared to four channels that are electrically isolated individually. Order Information Part Description The SFH6943 is a four channel mini-optocoupler suitable for high density packaged PCB application. It has a minimum of 1768 VRMS isolation from input to Remarks SFH6943-2 CTR 63 - 200 %, SMD-10 SFH6943-3 CTR 100 - 320 %, SMD-10 SFH6943-4 CTR 160 - 500 %, SMD-10 For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 3 V DC forward current IF 5 mA IFSM 100 mA Pdiss 10 mW Surge forward current Total power dissipation Document Number 83688 Rev. 1.3, 20-Apr-04 Test condition tP ≤ 10 µs Unit www.vishay.com 1 SFH6943 VISHAY Vishay Semiconductors Output Symbol Value Collector-emitter voltage Parameter Test condition VCE 70 Unit V Emitter-collector voltage VEC 7 V IC 10 mA IFSM 20 mA Pdiss 20 mW Symbol Value Unit VISO 1768 VRMS Creepage ≥4 mm Clearance ≥4 mm Comparative tracking index per DIN IEC 112/VDE0303, part 1 175 Collector current Surge collector current tP < 1 ms Total power dissipation Coupler Parameter Isolation test voltage (between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74) Isolation resistance Test condition t = 1 sec. VIO = 100 V, Tamb = 25 °C RIO ≥ 1011 Ω VIO = 100 V, Tamb = 100 °C RIO 12 Ω ≥ 10 Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C Junction temperature Soldering temperature, Dip soldering plus reflow soldering processes t = 10 sec. max Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Forward voltage IF = 5 mA VF 1.25 Reverse current VR = 3 V IR 0.01 Capacitance VR = 0 V, f = 1 MHz Thermal resistance Max Unit 10 µA V CO 5 pF Rthja 1000 K/W Output Symbol Min Collector-emitter voltage Parameter ICE = 10 µA Test condition VCEO 70 Emitter-collector voltage IEC = 10 µA VECO 7 Collector-emitter capacitance VCE = 5 V, f = 1 MHz CCE 6 pF Rthja 500 K/W ICEO 50 nA Thermal resistance Collector-emitter leakage current www.vishay.com 2 VCE = 10 V Typ. Max Unit V V Document Number 83688 Rev. 1.3, 20-Apr-04 SFH6943 VISHAY Vishay Semiconductors Coupler Parameter Test condition Coupling capacitance Symbol Min Typ. Max Unit 1 CC pF Current Transfer Ratio Parameter Coupling Transfer Ratio Test condition IF = 1 mA, VCE = 1.5 V IF = 0.5 mA, VCC = 5 V Part Symbol Min Max Unit SFH6943-2 IE/IF 63 Typ. 200 % SFH6943-3 IE/IF 100 320 % SFH6943-4 IE/IF 160 500 % SFH6943-2 IE/IF 32 100 % SFH6943-3 IE/IF 50 160 % SFH6943-4 IE/IF 80 250 % Switching Characteristics Test condition Symbol Turn-on time Parameter IE = 2 mA, RE = 100 Ω, VCC = 5 V ton Min Typ. 3 Max Unit µs Rise time IE = 2 mA, RE = 100 Ω, VCC = 5 V tr 2.6 µs Turn-off time IE = 2 mA, RE = 100 Ω, VCC = 5 V toff 3.1 µs Fall time IE = 2 mA, RE = 100 Ω, VCC = 5 V tf 2.8 µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) IF IF→ VCC = 5 V V0 F = 10 KHz DF = 50% IE = 2 mA ↓ isfh6943_01 Fig. 1 Switching times (typ.) Document Number 83688 Rev. 1.3, 20-Apr-04 VO RE = 100 Ω tF tR isfh6943_02 tON tOFF Fig. 2 Switching Waveform www.vishay.com 3 SFH6943 VISHAY Vishay Semiconductors 103 101 IF = 0, ICEO = f (VCE) VF = f (IF) –2 5° ° 85 101 IF/mA ICEO / nA 100 50 ° 25 ° 102 10–1 100 10–1 10–2 10–3 10–2 .8 .9 1 isfh6943_03 1.1 VF/V 1.2 1.3 1.6 1.4 8 30 40 VCE / V 50 60 70 IF = f 7 6 5 1.2 1.0 4 IF / mA NCTR 20 Fig. 6 Collector-Emitter Leakage Current (typ.) Normalized to IF = 1 mA, NCTR = f (IF) VCE = 1.5 V IF = 1 mA 1.8 10 isfh6943_06 Fig. 3 LED Current vs. LED Voltage 2.0 0 1.4 .8 3 .6 2 .4 1 .2 0 0 10–4 I F /A isfh6943_04 10 –3 10 –2 Fig. 4 Non-Saturated Current Transfer 0 10 20 30 isfh6943_07 40 50 TA / °C 60 70 80 90 100 Fig. 7 Permissible Forward Current Diode 30 25.0 f = 1 MHz, CCE = f (VCE) 22.5 20.0 Ptot = f (TA) 25 17.5 Transistor 20 15 12.5 C CE 10.0 Ptot / mW CCE/PF 15.0 7.5 5.0 Diode 10 5 2.5 0 0 10–2 isfh6943_05 10–1 100 VCE/V Fig. 5 Transistor Capacitances (typ.) www.vishay.com 4 101 102 0 isfh6943_08 10 20 30 40 50 60 70 80 90 100 TA / °C Fig. 8 Permissible Power Dissipation Document Number 83688 Rev. 1.3, 20-Apr-04 SFH6943 VISHAY Vishay Semiconductors 103 25 IF = 1 mA, VCC = 5 V, ton, tr, toff, tt = f (RL) 10 ICE = 1 (VCE, IF) 20 t off 15 I CE /mA t / us tf t on 101 10 tr 5 100 10 2 0 10 3 RL / OHM isfh6943_09 10 4 10 10 5 -2 -1 10 isfh6943_10 Fig. 9 10 0 1 10 10 2 V CE /V Fig. 10 Transistor Output Characteristics Package Dimensions in Inches (mm) 10° .016 (.41) .018 (.46) 7° .256 ± .004 .043 (6.50 ± .10) (1.09) .200 ± .005 (5.80 ± .13) .035 (.90) .063 ± .004 (1.60 ± .10) 0.004 (.10) 0.138 ± .004 max. (3.51 ± .10) .01 (.25) R 0.020 ± .004 (.51 ± .10) 10° 0°–7° 0.010R 7° (.25) 45° .276 ± .008 (7.01 ± .20) .002 +.002 –.001 (.05 +.05 –.03) R .005(.13) 0.020 (.51) min. .010 (.25) .053 (1.35) ISO Method A .024 (.61) .026 (.66) .050 (1.27) .040 (1.02) i178044 Document Number 83688 Rev. 1.3, 20-Apr-04 .216 (5.49) .296 (7.52) www.vishay.com 5 SFH6943 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83688 Rev. 1.3, 20-Apr-04