LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only BAR DIGIT LED DISPLAY LBD142A-XX/RP25 DATA SHEET DOC. NO : QW0905- LBD142A-XX/RP25 REV. : A DATE : 19 - Apr. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/9 PART NO. LBD142A-XX/RP25 Package Dimensions 43.6(1.717") 6.0 (0.236") 5x7=35(1.38") Y R G Y R R R G 5.6 (0.22") 4.2 (0.165) 2.5 ±0.5 1.5 (0.059") 2.54X9= 22.86(0.9") Ø0.45 TYP 4.2 (0.165") 4.0 5.0 (0.197") 3.0 (0.118") LBD142A-XX/RP25 LIGITEK PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/9 PART NO. LBD142A-XX/RP25 Internal Circuit Diagram LBD142A-XX/RP25 1, 10 HYS HRF UG HYS HRF HRF HRF UG 2 3 4 5 6 7 8 9 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD142A-XX/RP25 Page 3/9 Electrical Connection PIN NO.1 LBD142A-XX/RP25 1 Common Anode 2 Cathode Yellow 3 Cathode Red 4 Cathode Green 5 Cathode Yellow 6 Cathode Red 7 Cathode Red 8 Cathode Red 9 Cathode Green 10 Common Anode LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD142A-XX/RP25 Page 4/9 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT HYS HRF UG Forward Current Per Chip IF 30 30 30 mA Peak Forward Current PerChip (Duty 1/10,0.1ms Pulse Width) IFP 60 90 120 mA Power Dissipation Per Chip PD 75 75 100 mW Ir 10 μA Electrostatic Discharge( * ) ESD 2000 μA Operating Temperature Topr -40 ~ +85 ℃ Storage Temperature Tstg -40 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO AlGaInP Yellow LBD142A-XX/RP25 AlGaInP Red AlGaInP Green Common Anode Electrical λD (nm) △λ Vf(v) (nm) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. 587 15 1.7 2.1 2.6 15.25 630 20 1.5 1.8 2.4 574 20 1.7 2.1 2.6 Note : 1.The forward voltage data did not including ± 0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 26 2:1 6.1 10.5 2:1 10.5 18 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/9 PART NO. LBD142A-XX/RP25 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD142A-XX/RP25 Page6/9 Typical Electro-Optical Characteristics Curve HYS CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.5 1.0 2.0 2.5 3.0 1.0 10 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 1.2 3.0 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 650 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/9 PART NO. LBD142A-XX/RP25 Typical Electro-Optical Characteristics Curve HRF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 1.0 1.5 2.0 2.5 3.0 1.0 Fig.4 Relative Intensity vs. Temperature Fig.3 Forward Voltage vs. Temperature 3.0 Relative Intensity@20mA Normalize@25℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 -0 20 40 60 80 100 Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 100 10 1.0 0.5 0 550 600 650 Wavelength (nm) 700 2.5 2.0 1.5 1.0 0.5 0 -40 -20 -0 20 40 60 80 Ambient Temperature( ℃) 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD142A-XX/RP25 Page 8/9 Typical Electro-Optical Characteristics Curve UG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.0 2.0 4.0 3.0 5.0 1.0 10 Fig.4 Relative Intensity vs. Temperature Fig.3 Forward Voltage vs. Temperature 3.0 Relative Intensity@20mA Normalize @25℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 650 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 9/9 PART NO. LBD142A-XX/RP25 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11