MPSA 42 / 43 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor MPSA 92 and MPSA 93 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Unit Value MPSA 42 MPSA 43 Collector Base Voltage VCBO 300 200 V Collector Emitter Voltage VCEO 300 200 V Emitter Base Voltage VEBO 6 V IC 500 mA 625 mW 5.0 mW/℃ 1.5 W 12 mW/℃ Collector Current Total Device Dissipation @ Ta=25℃ Derate above 25℃ Ptot Total Device Dissipation @ Tc=25℃ Derate above 25℃ Ptot Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 18/06/2004 MPSA 42 / 43 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit at IC=1mA,VCE=10V hFE 25 - - - at IC=10mA,VCE=10V hFE 40 - - - at IC=30mA,VCE=10V hFE 40 - - - DC Current Gain Emitter Cutoff Current at VEB=6V MPSA 42 IEBO - - 0.1 μA VEB=4V MPSA 43 IEBO - - 0.1 μA at VCB=200V MPSA 42 ICBO - - 0.1 μA VCB=160V MPSA 43 ICBO - - 0.1 μA MPSA 42 V(BR)CBO 300 - - V MPSA 43 V(BR)CBO 200 - - V MPSA 42 V(BR)CEO 300 - - V MPSA 43 V(BR)CEO 200 - - V V(BR)EBO 6 - - V VCE(sat) - - 0.5 V VBE(sat) - - 0.9 V fT 50 - - MHz MPSA 42 Cob - - 3 pF MPSA 43 Cob - - 4 pF Collector Cutoff Current Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=100μA Collector Saturation Voltage at IC=20mA,IB=2mA Base Saturation Voltage at IC=20mA,IB=2mA Gain Bandwidth Product at IC=10mA ,VCE=20V,f=100MHz Collector Output Capacitance at VCB=20V,f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 18/06/2004 MPSA 42 / 43 hFE, DC Current Gain 120 VCE =10V TJ=+125°C 100 80 TJ=25°C 60 40 TJ=-55°C 20 0 1.0 0.1 10 100 C, Capacitance (pF) IC, Collector Current (mA) Figure 1. DC Current Gain 100 Ceb @ 1MHz 10 1 Ccb @ 1MHz 0.1 0.1 1 10 100 1000 VR, Reverse Voltage (volts) Figure 2. Capacitance 1.4 A VBE(sat) @-55°C, IC/IB=10 B VBE(on) @ -55°C,VCE=10V V, Voltage (volts) 1.2 C VBE(sat) @ 125°C,IC/IB=10 1.0 D VBE(sat) @ 25°C,IC/IB=10 0.8 E VBE(on) @ 125°C,VCE=10V 0.6 F VBE(on) @ 25°C,VCE=10V 0.4 G VCE(sat) @ 125°C,IC/IB=10 0.2 H VCE(sat) @ 25°C,IC/IB=10 I VCE(sat) @ -55°C,IC/IB=10 0.0 0.1 1.0 10 100 IC, Collector Current (mA) Figure 3."on" Voltages SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 18/06/2004