MTW32N20E Preferred Device Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. http://onsemi.com 32 AMPERES, 200 VOLTS RDS(on) = 75 mW N−Channel D Features • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • G Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Isolated Mounting Hole Pb−Free Package is Available* S MARKING DIAGRAM AND PIN ASSIGNMENT MAXIMUM RATINGS (TC = 25°C unless otherwise noted) 4 Drain Symbol Value Unit Drain−Source Voltage VDSS 200 Vdc Drain−Gate Voltage (RGS = 1.0 MW) VDGR 200 Vdc Rating Gate−Source Voltage − Continuous Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 ms) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vpk, IL = 32 Apk, L = 1.58 mH, RG = 25 W ) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds VGS ± 20 Vdc ID ID 32 19 128 Adc PD 180 1.44 W W/°C TJ, Tstg −55 to 150 °C EAS 810 mJ IDM 1 Gate RqJC RqJA 0.7 40 °C/W TL 260 °C 1 3 Source 2 Drain A Y WW G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. June, 2006 − Rev. 6 MTW32N20E AYWWG TO−247AE CASE 340K STYLE 1 Apk Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2006 1 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device MTW32N20E MTW32N20EG Package Shipping TO−247 30 Units/Rail TO−247 (Pb−Free) 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MTW32N20E/D MTW32N20E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Min Typ Max Unit 200 − − 247 − − Vdc mV/°C − − − − 250 1000 − − 100 nAdc 2.0 − − 8.0 4.0 − Vdc mV/°C − 0.064 0.075 W − − − − 3.0 2.7 gFS 12 − − mhos Ciss − 3600 5000 pF Coss − 130 250 Crss − 690 1000 td(on) − 25 50 tr − 120 240 td(off) − 75 150 tf − 91 182 QT − 85 120 Q1 − 12 − Q2 − 40 − Q3 − 30 − − − 1.1 0.9 2.0 − trr − 280 − ta − 195 − tb − 85 − QRR − 2.94 − mC Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD − 5.0 − nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS − 13 − nH Characteristic OFF CHARACTERISTICS V(BR)DSS Drain−Source Breakdown Voltage (VGS = 0 V, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 200 Vdc, VGS = 0) (VDS = 200 Vdc, VGS = 0, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS mAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) VGS(th) Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 16 Adc) RDS(on) Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 32 Adc) (ID = 16 Adc, TJ = 125°C) VDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 16 Adc) Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 1 & 2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 100 Vdc, ID = 32 Adc, VGS = 10 Vdc, RG = 6.2 W) Fall Time Gate Charge (VDS = 160 Vdc, ID = 32 Adc, VGS = 10 Vdc) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS (Note 1) Forward On−Voltage (IS = 32 Adc, VGS = 0) (IS = 16 Adc, VGS = 0, TJ = 125°C) Reverse Recovery Time (IS = 32 Adc, VGS = 0, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge VSD Vdc ns INTERNAL PACKAGE INDUCTANCE 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 MTW32N20E TYPICAL ELECTRICAL CHARACTERISTICS 50 VGS = 10 V TJ = 25°C TJ = −55°C 9V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 100 80 8V 60 7V 40 6V 20 100°C VDS ≥ 10 V 40 25°C 30 20 10 5V 0 2 4 6 8 0 10 6 8 RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS) Figure 2. Transfer Characteristics VGS = 10 V TJ = 100°C 0.1 0.08 25°C 0.06 −55 °C 0.04 0.02 8 0 4 Figure 1. On−Region Characteristics 0.12 0 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.16 0.14 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 16 24 32 40 48 56 64 10 0.1 TJ = 25°C 0.09 0.08 VGS = 10 V 0.07 15 V 0.06 0.05 0 8 16 24 32 40 48 56 64 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Gate Voltage 2.5 10000 VGS = 0 V VGS = 10 V ID = 16 A 2000 2 I DSS, LEAKAGE (mA) RDS(on) , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS) 0 TJ = 125°C 1000 1.5 1 200 100 100°C 20 0.5 −50 −25 0 25 50 75 100 125 10 150 25°C 0 50 100 150 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 3 200 MTW32N20E POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off−state condition when calculating td(on) and is read at a voltage corresponding to the on−state when calculating td(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by L di/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr = Q2 x RG/(VGG − VGSP) tf = Q2 x RG/VGSP where VGG = the gate drive voltage, which varies from zero to VGG RG = the gate drive resistance and Q2 and VGSP are read from the gate charge curve. During the turn−on and turn−off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG − VGSP)] td(off) = RG Ciss In (VGG/VGSP) 10000 VDS = 0 VGS = 0 TJ = 25°C C, CAPACITANCE (pF) 8000 Crss 6000 4000 Ciss 2000 Coss 0 10 5 0 VGS 5 10 15 20 25 VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 4 MTW32N20E 16 VDS 180 160 140 12 120 QT 8 100 80 Q2 Q1 VGS 60 40 4 0 20 Q3 0 10 20 30 40 50 60 70 QT, TOTAL CHARGE (nC) 80 90 0 100 1000 td(off) TJ = 25°C ID = 32 A VDD = 100 V VGS = 10 V 200 t, TIME (ns) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 200 TJ = 25°C ID = 32 A VDS = 160 V VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS) 20 100 tr tf td(on) 20 10 2 1 1 Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 2 10 20 RG, GATE RESISTANCE (OHMS) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN−TO−SOURCE DIODE CHARACTERISTICS TJ = 25°C VGS = 0 V I S , SOURCE CURRENT (AMPS) 30 20 10 0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance−General Data and Its Use.” Switching between the off−state and the on−state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10ms. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) − TC)/(RqJC). A Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non−linearly with an increase of peak current in avalanche and peak junction temperature. Although many E−FETs can withstand the stress of drain−to−source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. http://onsemi.com 5 MTW32N20E SAFE OPERATING AREA VGS = 20 V SINGLE PULSE TC = 25°C I D , DRAIN CURRENT (AMPS) 200 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 1000 10 ms .1 20 10 1 10 2 1 0.2 0.1 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 2 1 100 200 10 20 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 750 ID = 32 A 600 450 300 150 0 25 1000 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 D = 0.5 0.2 0.1 0.05 P(pk) 0.02 0.02 0.01 0.002 0.001 0.01 150 Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.1 0.2 1 2 t, TIME (ms) 10 Figure 13. Thermal Response http://onsemi.com 6 20 RqJC(t) = r(t) RqJC RqJC = 0.7°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 100 200 1000 MTW32N20E PACKAGE DIMENSIONS TO−247 CASE 340K−01 ISSUE C 0.25 (0.010) M E −B− C A R 1 2 3 −Y− P V H F D 0.25 (0.010) M 4 L U K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −T− −Q− T B M Y Q J G S DIM A B C D E F G H J K L P Q R U V STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 GATE DRAIN SOURCE DRAIN E−FET is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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