TOSHIBA TK100F06K3

TK100F06K3
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (U-MOSIV)
TK100F06K3
Swiching Regulator, DC-DC Converter Applications
Motor Drive Applications
High forward transfer admittance: |Yfs| = 174 S (typ.)
•
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
•
Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
0.4 ± 0.1
10.0 ± 0.3
10.0 ± 0.3
9.5 ± 0.2
1.1
Absolute Maximum Ratings (Ta = 25°C)
0.76 ± 0.1
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
100
Pulse
(Note 1)
IDP
300
Drain power dissipation (Tc = 25°C)
PD
180
W
Single pulse avalanche energy
(Note 2)
EAS
81
mJ
Avalanche current
IAR
100
A
Repetitive avalanche energy (Note 3)
EAR
18
mJ
Channel temperature
(Note 4)
Tch
175
°C
Storage temperature range
(Note 4)
Tstg
−55 to 175
°C
2.35 ± 0.1
2.34 ± 0.25
1
A
0.4 ± 0.1
1.
2.
GATE
DRAIN
（HEAT SINK）
3. SOURSE
8.0
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-10W1A
Weight: 1.07 g (typ.)
Thermal Characteristics
Characteristics
2 3
6.8
Drain current
1.4 ± 0.1
2.54 ± 0.25
3.5 ± 0.2
Rating
2.76
Symbol
0.1 ± 0.1
Characteristics
3.0 ± 0.2
•
Unit: mm
1.6
Low drain-source ON resistance: RDS (ON) = 4.0mΩ (typ.)
1.0 ± 0.3
•
2
Symbol
Max
Unit
Rth (ch-c)
0.83
°C/W
1
Thermal resistance, channel to case
Note 1: Please use devices on condition that the channel temperature is below 175°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 11 μH, RG = 25 Ω, IAR = 100 A
3
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Note 4: 175°C refers to AEC-Q101.
Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution
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TK100F06K3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-OFF current
IDSS
VDS = 40 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
60
⎯
⎯
V (BR) DSX ID = 10 mA, VGS = −20 V
35
⎯
⎯
Drain-source breakdown voltage
V
Vth
VDS = 10 V, ID = 1 mA
3.0
⎯
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 50 A
⎯
4.0
5.0
mΩ
Forward transfer admittance
⎪Yfs⎪
VDS = 10 V, ID = 50 A
87
174
⎯
S
Input capacitance
Ciss
⎯
4500
⎯
Reverse transfer capacitance
Crss
⎯
600
⎯
Output capacitance
Coss
⎯
800
⎯
⎯
18
⎯
⎯
33
⎯
Gate threshold voltage
Rise time
tr
Turn-ON time
VDS = 10V, VGS = 0 V, f = 1 MHz
VGS
0V
ton
tf
Turn-OFF time
RL = 0.6 Ω
4.7 Ω
Switching time
Fall time
ID = 50 A
VOUT
10 V
VDD ≈ 30 V
Duty ≤ 1%, tw = 10 μs
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 100 A
pF
ns
⎯
23
⎯
⎯
73
⎯
⎯
98
⎯
⎯
57
⎯
⎯
41
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
⎯
⎯
⎯
100
A
Pulse drain reverse current
IDRP
⎯
⎯
⎯
300
A
(Note 1)
Forward voltage (diode)
VDSF
IDR = 100 A, VGS = 0 V
⎯
⎯
−1.2
V
Reverse recovery time
trr
IDR = 100 A, VGS = 0 V,
⎯
62
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 50 A/μs
⎯
62
⎯
nC
Marking
Note 6: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K100F06K
3
Part No.
(or abbreviation code)
Lot No.
Note 6
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
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TK100F06K3
Moisture-Proof Packing
The TK100F06K3 is packed in a moisture-proof laminated aluminum bag.
Precautions for Transportation and Storage
(1) Avoid excessive vibration during transportation.
(2) Do not toss or drop the packed devices to avoid ripping of the bag.
(3) After opening the moisture-proof bag, the devices should be assembled within two weeks in an environment of 5°C
to 30°C and RH70% or below. Perform reflow at most twice.
(4) The moisture-proof bag may be stored unopened for up to 12 months at 5°C to 30°C and RH90% or below.
(5) If, upon opening the bag, the moisture indicator card shows humidity of 30% or above (the color of the 30% dot has
changed from blue to pink) or the expiration date has passed, the devices should be baked as follows:
Baking conditions: 125°C for 48 hours.
Since the tape materials are not heat-proof, devices should be placed on either heat-proof trays or aluminum
magazines when baking.
30%
The humidity indicator shows an approximate ambient humidity at 25°C.
If the ambient humidity is below 30%, the color of all the indicator dots is blue.
If, upon opening the bag, the color of the 30% dot has changed from blue to pink,
the devices should be baked before assembly.
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TK100F06K3
ID – VDS
100
Common source 10
Tc = 25°C
Pulse Test
80
6.3
160
6.5
8
6.3
(A)
7
7
Common source 10
Tc = 25°C
Pulse Test
6
6.5
(A)
8
ID
5.8
60
Drain current
ID
Drain current
ID – VDS
200
5.6
40
5.4
20
120
6
80
5.8
5.6
40
VGS = 5 V
0
0
0.2
0.4
0.6
Drain-source voltage
0.8
VDS
VGS = 5.4 V
0
1.0
0
(V)
0.4
0.8
Drain-source voltage
ID – VGS
200
(V)
(V)
Common source
Tc = 25°C
Pulse Test
0.8
VDS
Drain-source voltage
ID (A)
Drain current
VDS
2
VDS – VGS
120
80
100
0
Tc = −55°C
25
40
0
2
4
6
Gate-source voltage
8
VGS
0.6
50
0.2
25
0
10
ID = 100 A
0.4
0
(V)
4
8
Gate-source voltage
|Yfs| – ID
100
Tc = −55°C
100
25
10
1
1
10
12
16
VGS
20
(V)
RDS (ON) – ID
100
Common source
VDS = 10 V
Pulse Test
Drain-source ON resistance
RDS (ON) (mΩ)
1000
Forward transfer admittance ⎪Yfs⎪ (S)
1.6
1
Common source
VDS = 10 V
Pulse Test
160
1.2
100
10
VGS = 10 V
1
1000
Drain current ID (A)
Common source
Tc = 25°C
Pulse Test
1
10
100
1000
Drain current ID (A)
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TK100F06K3
RDS (ON) − Tc
IDR − VDS
1000
Common source
VGS = 10 V
Pulse Test
100 A
6
ID = 25,50 A
4
2
−40
0
40
80
120
160
5
10
3
1
Common source
Tc = 25°C
Pulse Test
0.1
0
200
VGS = 0
1
−0.3
−0.6
Drain-source voltage
Case temperature Tc (°C)
Ciss
1000
Coss
Gate threshold voltage Vth (V)
(pF)
Capacitance C
10000
Common source
VGS = 0 V
f =1MHz
Tc = 25°C
(V)
Common source
VDS = 10 V
ID = 1mA
Pulse Test
4
3
2
1
1
10
VDS
0
−80
100
−40
(V)
0
40
80
120
160
Dynamic input / output
characteristics
80
(V)
250
VDS
200
Drain-source voltage
150
100
50
0
40
80
120
200
Case temperature Tc (°C)
PD − Tc
PD (W)
−1.5
Crss
Drain-source voltage
Drain power dissipation
VDS
5
100
0.1
−1.2
Vth − Tc
Capacitance – VDS
100000
0
−0.9
160
Case temperature Tc (°C)
14
12
24
VDS
50
10
12
VDD = 48V
40
30
8
6
VGS
20
4
10
2
0
200
16
Common source
I = 100 A
70 D
Tc = 25°C
Pulse Test
60
0
20
40
60
80
100
120
140
VGS (V)
0
−80
10
100
Gate-source voltage
8
Drain reverse current IDR (A)
Drain-source ON resistance
RDS (ON) (mΩ)
10
0
160
Total gate charge Qg (nC)
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TK100F06K3
rth – tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
10
1
Duty=0.5
0.2
SINGLE PULSE
0.1
PDM
0.1
t
0.05
T
0.02
0.01
0.01
10μ
Duty = t/T
Rth (ch-c) = 0.83°C/W
100μ
1m
10m
Pulse width
100m
1
tw (s)
EAS – Tch
SAFE OPERATING AREA
100
1000
100 μs *
1 ms *
10
Avalanche energy
Drain current ID (A)
ID max (continuous)
EAS (mJ)
ID max (pulse) *
100
10
DC OPEATION
Tc = 25°C
1
80
60
40
20
0
25
0.1
0.01
0.1
1
Drain-source voltage
50
75
100
125
150
Channel temperature (initial)
※ Single pulse Tc=25℃
Curves must be derated
linearly with increase in
temperature.
L = 11uH
VDD = 25V
IAR = 100A
175
200
Tch (°C)
VDSS max
10
100
BVDSS
15 V
VDS (V)
IAR
0V
VDD
Test circuit
RG = 25 Ω
VDD = 25 V, L = 11 μH
6
VDS
Waveform
E
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
−
2
V
VDSS
DD
⎝
⎠
2009-04-17
TK100F06K3
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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