TOSHIBA TPCS8004_09

TPCS8004
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
TPCS8004
High-Speed Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
Unit: mm
•
Small footprint due to small and thin package
•
Low drain-source ON resistance: RDS (ON) = 0.56 Ω (typ.)
•
High forward transfer admittance: |Yfs| = 1.8 S (typ.)
•
Low leakage current: IDSS = 100 μA (max) (VDS = 200 V)
•
Enhancement model: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
200
V
Gate-source voltage
VGSS
±20
V
(Note 1)
ID
1.3
Pulse (Note 1)
IDP
5.2
Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.5
Drain power dissipation (t = 10 s)
(Note 2b)
PD
0.6
Single pulse avalanche energy (Note3)
EAS
1.05
mJ
Avalanche current
IAR
1.3
A
Repetitive avalanche energy
(Note2a, Note 4)
EAR
0.15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
DC
A
JEDEC
―
JEITA
―
TOSHIBA
W
2-3R1B
Weight: 0.035 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
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TPCS8004
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Rth (ch-a)
83.3
°C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Rth (ch-a)
208
°C/W
Marking (Note 5)
Part No. (or abbreviation code)
S8004
Lot No.
Note 1:
Note 6
Ensure that the channel temperature does not exceed 150°C.
Note 2:
a)
Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
Note 3: VDD = 50 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 1.3 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: ○ on lower right of the marking indicates Pin 1.
※ Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
Note 6: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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TPCS8004
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-OFF current
IDSS
VDS = 200 V, VGS = 0 V
⎯
⎯
100
μA
ID = 10 mA, VGS = 0 V
200
⎯
⎯
V
Drain-source breakdown voltage
V (BR) DSS
Vth
VDS = 10 V, ID = 1 mA
1.5
⎯
3.5
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 0.6 A
⎯
0.56
0.8
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.6 A
0.9
1.8
⎯
S
Input capacitance
Ciss
⎯
380
⎯
pF
Reverse transfer capacitance
Crss
⎯
40
⎯
pF
Output capacitance
Coss
⎯
140
⎯
pF
⎯
4.5
⎯
⎯
12
⎯
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
VGS
Turn-ON time
ton
Fall time
tf
Turn-OFF time
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
0V
4.7 Ω
Switching time
ID = 0.6 A
VOUT
10 V
RL = 167 Ω
Gate threshold voltage
ns
⎯
23
⎯
⎯
54
⎯
⎯
12
⎯
nC
⎯
8
⎯
nC
⎯
4
⎯
nC
VDD ∼
− 100 V
Duty <
= 1%, tw = 10 μs
VDD ∼
− 160 V, VGS = 10 V,
ID = 1.3 A
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current (pulse)
Forward voltage (diode)
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
5.2
A
⎯
⎯
−2.0
V
VDSF
IDR = 1.3 A, VGS = 0 V
Reverse recovery time
trr
IDR = 1.3 A, VGS = 0 V,
⎯
89
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/μs
⎯
230
⎯
nC
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TPCS8004
ID – VDS
ID – VDS
5
4.6
Common source
Ta = 25°C
Pulse test
4.8
8
4
4.4
3
4.2
2
6
10
Drain current ID (A)
4.8
6
4
Drain current ID (A)
Common source
Ta = 25°C
Pulse test
8
10
5
4
4.6
4.4
3
4.2
2
4
3.8
1
0
0
10
20
30
Drain-source voltage
3.8
1
VGS = 3.6 V
VGS = 3.6 V
0
0
40
2
VDS (V)
4
Drain-source voltage
ID – VGS
Common source
VDS = 10 V
Pulse test
3
2
25°C
1
Ta = 100°C
0
0
1
2
−55°C
3
Gate-source voltage
10
VDS (V)
VDS – VGS
Drain-source voltage
Drain current ID (A)
4
8
3.0
VDS (V)
5
6
4
Common source
Ta = 25°C
Pulse test
2.5
2.0
ID = 2.6 A
1.5
1.0
1.3
0.5
0.6
0.32
0
0
5
4
VGS (V)
8
12
Gate-source voltage
16
20
VGS (V)
|Yfs| – ID
Forward transfer admittance ⎪Yfs⎪
3
Common source
VDS = 10 V
Pulse test
RDS (ON) – ID
Ta = −55°C
100°C
5
(Ω)
(S)
5
25°C
Drain-source on resistance RDS (ON)
7
1
0.5
0.3
0.1
0.05
0.05
0.1
0.3
0.5
1
3
3
Drain current ID (A)
Ta = 25°C
Pulse test
1
VGS = 10 V
0.5
15 V
0.3
0.1
0.05
0.05
5
Common source
0.1
0.3
0.5
1
3
5
Drain current ID (A)
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TPCS8004
IDR – VDS
10
Common source
0.65 A
ID = 0.32 A
0.8
0
0.4
VGS = 10 V
0.2
0
−80
−40
0
40
80
Ambient temperature Ta
120
Common source
Ta = 25°C
5
(A)
Pulse test
3
1
0.5
0.3
VGS = 10 V
5V
160
(°C)
0, −1 V
3V
0.1
−0.03 −0.05
−0.1
−0.3 −0.5
Drain-source voltage
Capacitance – VDS
5
Vth (V)
100
Gate threshold voltage
Coss
10
Crss
Common source
Ta = 25°C
f = 1MHz
VGS = 0 V
1
0.1
Common source
VDS = 10 V
ID = 1 mA
Pulse test
4
3
2
1
0
−80
1
10
Drain-source voltage
120
160
VDS
(V)
160
1.2
0.8
(2)
0.4
80
80
Dynamic input/output characteristics
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t = 10 s
40
40
VDS (V)
Drain-source voltage
Drain power dissipation PD (W)
(1)
0
Ambient temperature Ta (°C)
100
PD – Ta
2.0
−40
120
160
40
120
12
80
VDD = 160 V
80
8
VGS
Common source
ID = 1.3 A
40
4
Ta = 25 °C
0
0
200
16
VDS
4
8
12
16
VGS (V)
Capacitance C
(pF)
Ciss
0
0
VDS (V)
Vth – Ta
1000
1.6
−3
−1
Gate-source voltage
1.0
1.3 A
Pulse test
Drain reverse current IDR
Drain-source ON resistance RDS (ON)
(Ω)
RDS (ON) – Ta
1.2
0
Total gate charge Qg (nC)
Ambient temperature Ta (°C)
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TPCS8004
rth − tw
Normalized transient thermal impedance
rth (°C/W)
500
300
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
t = 10 s
100
(1)
50
30
10
5
3
1
0.5
0.3
Single pulse
0.1
1m
10 m
100 m
1
Pulse width
10
tw
100
(S)
EAS − Tch
Safe operating area
5
3
1.2
ID max (pulse) *
1 ms *
Avalanche energy EAS (mJ)
10
Drain current ID (A)
1
0.5
0.3
10 ms *
0.1
0.05
0.03
0.01
0.005
* Single pulse Ta = 25°C
0.003
Curves must be derated linearly
with increase in temperature.
0.001
0.1
0.3
1
3
10
Drain-source voltage
1000
100
0.8
0.6
0.4
0.2
0
25
VDSS max
30
1.0
300
50
75
100
125
150
Channel temperature (initial) Tch (°C)
1000
VDS (V)
15 V
BVDSS
IAR
−15 V
VDD
Test circuit
VDS
Wave form
Tch = 25°C (Initial)
⎞
B VDSS
1
2 ⎛
Peak IAR = 1.3 A, RG = 25 Ω E AS = 2 ⋅ L ⋅ I ⋅ ⎜⎜ B
⎟⎟
⎝ VDSS − VDD ⎠
VDD = 50 V, L = 1 mH
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TPCS8004
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
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TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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