PJSD03TS SERIES 120W, LOW CLAMPING VOLTAGE TVS FOR PROTECTION IN PORTABLE ELECTRONICS This tiny but powerful TVS/Zener Seires has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in very sensitive CMOS circuitry operating at 3.3V, 5V, 12V, 15V 24V and 36V .These devices come in the new standard SOD523 package making them suitable for Portable/Computing Electronics, where the board space is a premium. SPECIFICATION FEATURES 120W Power Dissipation (8/20µs Waveform) Very Low Leakage Current, Maximum of 5µA @ VRWM IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance K SOD523 Package A APPLICATIONS MP3 Players SOD123 SOD523 Digital Cameras GPS Mobile Phones and Accessories Notebook PC's MAXIMUM RATINGS Symbol Value Units Peak Pulse Power (8/20µs Waveform) P pp 120 W ESD Voltage (HBM) V ESD 25 kV Operating Temperature Range TJ -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Rating ELECTRICAL CHARACTERISTICS Parameter PJSD03TS Reverse Stand-Off Voltage Tj = 25°C Conditions Symbol V RWM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 3.3V Clamping Voltage (8/20µs) Vc Off State Junction Capacitance Cj Off State Junction Capacitance Cj 3/16/2006 Min Max Units 3.3 V 4.0 V 200 µA 6.5 V 0 Vdc Bias f = 1MHz 200 pF 3.3 Vdc Bias f = 1MHz 100 pF I pp = 5 A Page Typical 1 www.panjit.com PJSD03TS SERIES ELECTRICAL CHARACTERISTICS Parameter PJSD05TS Reverse Stand-Off Voltage PJSD12TS PJSD15TS Min Typical V RWM Max Units 5 V VBR I BR = 1mA Reverse Leakage Current IR VR = 5V 5 µA Clamping Voltage (8/20µs) Vc I pp = 5 A 9 V Off State Junction Capacitance Cj 0 Vdc Bias f = 1MHz 110 pF Off State Junction Capacitance Cj 5 Vdc Bias f = 1MHz 60 pF Max Units 12 V Reverse Stand-Off Voltage Conditions Symbol VBR I BR = 1mA Reverse Leakage Current IR VR = 12V Clamping Voltage (8/20µs) Vc I pp = 5 A Off State Junction Capacitance Cj Reverse Stand-Off Voltage Conditions Symbol I BR = 1mA Reverse Leakage Current IR VR = 15V Clamping Voltage (8/20µs) Vc I pp = 5 A Off State Junction Capacitance Cj Conditions Symbol I BR = 1mA Reverse Leakage Current IR VR = 24V Clamping Voltage (8/20µs) Vc I pp = 3 A Off State Junction Capacitance Cj Min Typical Conditions Symbol Min I BR = 1mA Reverse Leakage Current IR VR = 36V Clamping Voltage (8/20µs) Vc I pp = 1 A Off State Junction Capacitance Cj 0 Vdc Bias f = 1MHz Page 2 µA 17 V 60 pF Max Units 15 V V Typical 5 µA 22 V 50 pF Max Units 24 V 26.7 Min V RWM VBR 5 16.6 V 0 Vdc Bias f = 1MHz Reverse Breakdown Voltage 3/16/2006 V V RWM VBR Reverse Stand-Off Voltage 13.3 0 Vdc Bias f = 1MHz Reverse Breakdown Voltage Parameter Typical V RWM VBR Reverse Stand-Off Voltage Min V 0 Vdc Bias f = 1MHz Reverse Breakdown Voltage Parameter 6 V RWM Reverse Breakdown Voltage Parameter PJSD24TS Conditions Symbol Reverse Breakdown Voltage Parameter PJSD36TS Tj = 25°C Typical 5 µA 32 V 25 pF Max Units 36 V 40 V 5 µA 55 V 20 pF www.panjit.com PJSD03TS SERIES PACKAGE DIMENSIONS AND BOND PAD LAYOUT 3/16/2006 Page 3 www.panjit.com