Not for new design, this product will be obsoleted soon S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • • • 4 Low supply voltage Low current consumption e3 50 Ω input impedance at 945 MHz Low noise figure High power gain Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 SOT-343 3 4 1 2 SOT-343R 4 3 18383 Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Mechanical Data Typ: S822T Case: SOT-143 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Typ: S822TW Case: SOT-343 Plastic case Weight: approx. 6.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Typ: S822TRW Case: SOT-343R Plastic case Weight: approx. 6.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Parts Table Part Marking Package S822T 82 S822TW W22 SOT-343 S822TRW WS2 SOT-343R Document Number 85050 Rev. 1.5, 08-Sep-08 SOT-143 www.vishay.com 1 S822T / S822TW / S822TRW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Collector-base voltage Parameter Test condition VCBO 12 V Collector-emitter voltage VCEO 6 V Emitter-base voltage VEBO 2 V Collector current Total power dissipation Unit IC 8 mA Ptot 30 mW Tj 150 °C Tstg - 65 to + 150 °C Symbol Value Unit RthJA 450 K/W Tamb ≤ 125 °C Junction temperature Storage temperature range Maximum Thermal Resistance Parameter Junction ambient 1) Test condition 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Max Unit VCE = 12 V, VBE = 0 ICES 100 μA Collector-base cut-off current VCB = 8 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 1 μA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA Collector-emitter cut-off current Test condition DC forward current transfer ratio VCE = 3 V, IC = 1 mA www.vishay.com 2 Symbol Min 6 VCEsat hFE Typ. 40 V 0.1 0.4 90 150 V Document Number 85050 Rev. 1.5, 08-Sep-08 S822T / S822TW / S822TRW Vishay Semiconductors Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Transition frequency Symbol Min Typ. Max Unit VCE = 3 V, IC = 1 mA, f = 500 MHz fT 4.7 GHz VCE = 2 V, IC = 1.5 mA, f = 500 MHz fT 5.2 GHz Collector-base capacitance VCB = 1 V, f = 1 MHz Ccb 0.2 pF Noise figure ZS = ZSopt, f = 450 MHz, VCE = 2 V, IC = 0.5 mA Fopt 1.1 dB ZS = ZSopt, f = 945 MHz, VCE = 3 V, IC = 1 mA Fopt 1.8 dB ZS = ZSopt, f = 945 MHz, VCE = 2 V, IC = 1.5 mA Fopt 2 dB VCE = 2 V, IC = 0.5 mA, f = 450MHz Gpe @Fopt 13.5 dB VCE = 3 V, IC = 1 mA, f = 945 MHz Gpe @Fopt 12.5 dB VCE = 2 V, IC = 1.5 mA, f = 945 MHz Gpe @Fopt 14.0 dB Power gain Collector current for fT max VCE = 2 V, f = 500 MHz IC 3 mA Real part of input impedance VCE = 3 V, IC = 1 mA, f = 945 MHz Re(h11e) 50 Ω VCE = 2 V, IC = 1.5 mA, f = 945 MHz Re(h11e) 50 Ω Common Emitter S-Parameters VCE/V IC/mA f/MHz S11 S21 LIN MAG ANG 0.974 -4.0 LIN MAG ANG 1.86 175.2 deg 2 2 0.5 1.5 Document Number 85050 Rev. 1.5, 08-Sep-08 100 S12 S22 LIN MAG ANG 0.012 deg LIN MAG ANG 86.4 0.997 -2.3 deg deg 200 0.967 -7.9 1.84 169.7 0.024 82.4 0.993 -4.8 300 0.956 -11.8 1.82 164.2 0.035 78.6 0.87 -6.9 400 0.941 -15.6 1.79 158.9 0.046 75.1 0.979 -9.3 500 0.926 -19.0 1.75 153.9 0.056 71.7 0.968 -11.4 600 0.907 -22.5 1.72 149.2 0.066 69.0 0.959 -13.1 700 0.890 -25.8 1.68 145.0 0.075 66.4 0.951 -15.2 800 0.870 -29.3 1.66 141.0 0.084 63.9 0.940 -16.9 900 0.851 -32.3 1.63 136.1 0.092 61.1 0.930 -18.8 1000 0.833 -35.6 1.60 132.6 0.099 59.0 0.924 -20.4 1100 0.814 -39.0 1.58 128.6 0.108 56.9 0.913 -22.2 1200 0.794 -42.4 1.57 124.9 0.115 54.8 0.904 -24.0 1300 0.773 -45.6 1.55 121.2 0.121 52.7 0.895 -25.7 100 0.919 -6.9 4.86 171.8 0.012 84.3 0.992 -3.6 www.vishay.com 3 S822T / S822TW / S822TRW Vishay Semiconductors VCE/V IC/mA f/MHz S11 S21 LIN MAG ANG 200 0.897 300 400 S12 LIN MAG ANG -13.7 4.78 0.864 -19.8 0.824 -25.7 500 0.781 600 S22 LIN MAG ANG LIN MAG ANG 163.4 0.023 78.4 0.979 -7.1 4.62 155.7 4.41 148.3 0.034 73.0 0.957 -10.2 0.043 68.4 0.933 -31.0 4.21 -13.0 141.3 0.051 64.0 0.909 0.735 -36.1 -15.6 4.00 135.3 0.058 60.6 0.881 700 0.693 -17.3 -40.5 3.82 129.4 0.064 58.2 0.858 800 -19.2 0.647 -44.6 3.62 124.3 0.071 54.7 0.836 -20.7 900 0.605 -48.5 3.46 118.9 0.076 52.0 0.814 -22.3 1000 0.567 -52.4 3.30 114.3 0.081 49.8 0.796 -23.6 1100 0.526 -56.4 3.16 110.0 0.085 48.1 0.778 -24.9 1200 0.491 -60.1 3.04 105.7 0.090 46.1 0.763 -26.3 1300 0.458 -64.4 2.92 102.0 0.094 44.9 0.747 -27.5 deg deg deg deg Ccb - Collector Base Capacitance ( pF ) Typical Characteristics (Tamb = 25 °C unless otherwise specified) Ptot - Total Power Dissipation ( mW ) 50 40 30 20 10 0 0 25 50 75 100 125 150 Tamb – Ambient Temperature ( ° C ) 13619 f T - Transition Frequency ( MHz ) 7000 0.4 0.3 0.2 0.1 0.0 0 13621 Figure 1. Total Power Dissipation vs. Ambient Temperature 0.5 1 2 3 4 5 V CB - Collector Base V oltage ( V ) Figure 3. Collector Base Capacitance vs. Collector Base Voltage 3V f = 500 MHz 6000 2V 5000 4000 V CE = 1 V 3000 2000 1000 0 0 1 2 3 4 5 I C - Collector Current ( mA ) 13620 Figure 2. Transition Frequency vs. Collector Current www.vishay.com 4 Document Number 85050 Rev. 1.5, 08-Sep-08 S822T / S822TW / S822TRW Vishay Semiconductors VCE = 8 V, IC = 25 mA, Z0 = 50 Ω S11 S12 j 90 ° 120° j0.5 60° j2 900 150° 0 0.2 0.5 1 2 ∞ 5 30° 500 j5 j0.2 1300MHz 100 180° 0.04 0.08 0° 100 1300 MHz -j0.2 500 -j5 900 -150° -30° -j2 -j0.5 -120° -j 13 558 -60° -90° 13 559 Figure 6. Reverse Transmission Coefficient Figure 4. Input Reflection Coefficient S21 S22 j 90° 120° 150° 500 60° j0.5 j2 900 30° 1300 MHz 100 180° j5 j0.2 2 4 0° 0 0.2 0.5 1 -j0.2 2 5 100 500 1300 MHz ∞ -j5 -30 ° -150° -j0.5 -120° 13 560 -60° -90° Figure 5. Forward Transmission Coefficient Document Number 85050 Rev. 1.5, 08-Sep-08 13 561 -j2 -j Figure 7. Output Reflection Coefficient www.vishay.com 5 S822T / S822TW / S822TRW Vishay Semiconductors 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 0.35 [0.014] 1.1 [0.043] 0.9 [0.035] 0.08 [0.003] 0.15 [0.006] 3 [0.118] 2.8 [0.110] 0.1 [0.004] max. Package Dimensions in mm 2.6 [0.102] 2.35 [0.093] 1.8 [0.071] 1.6 [0.063] 0.5 [0.020] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030] foot print recommendation: 2 [0.079] 1.8 [0.071] 96 12240 1.2 [0.047] 0.8 [0.031] 0.8 [0.031] 2 [0.079] 0.9 [0.035] 0.9 [0.035] 1.4 [0.055] 1.2 [0.047] 1.7 [0.067] 0.8 [0.031] 1.9 [0.075] 0.4 [0.016] 0.25 [0.010] 0.4 [0.016] 0.25 [0.010] 1 [0.039] 0.8 [0.031] 0.2 [0.008] 0.1 [0.004] 2.2 [0.087] 1.8 [0.071] 0.1 [0.004] max. Package Dimensions in mm 0.15 [0.006] min. 2.2 [0.087] 2 [0.079] 1.25 [0.049] 1.05 [0.041] 0.4 [0.016] 0.25 [0.010] 0.7 [0.028] 0.55 [0.022] foot print recommendation: 1.15 [0.045] 0.09 [0.035] 96 12237 www.vishay.com 6 0.8 [0.031] 1.4 [0.055] 1.2 [0.047] 1.6 [0.063] 1.35 [0.053] 1.15 [0.045] 0.6 [0.024] 1.3 [0.051] Document Number 85050 Rev. 1.5, 08-Sep-08 S822T / S822TW / S822TRW Vishay Semiconductors Package Dimensions in mm 96 12238 Document Number 85050 Rev. 1.5, 08-Sep-08 www.vishay.com 7 S822T / S822TW / S822TRW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 Document Number 85050 Rev. 1.5, 08-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1