Si4884BDY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0090 @ VGS = 10 V 16.5 0.012 @ VGS = 4.5 V 13.2 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT 10 5 nC 10.5 SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4884BDY-T1—E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) TA = 25_C 13.2 ID 12.4b, c 10.0b, c TA = 70_C Pulsed Drain Current IDM Continuous Source-Drain Source Drain Diode Current TC = 25_C TA = 25_C Maximum Power Dissipation TA = 25_C 4.0 IS 2.3b, c 4.45 2.85 PD W 2.50b, c 1.6b, c TA = 70_C Operating Junction and Storage Temperature Range A 50 TC = 25_C TC = 70_C V 16.5 TC = 25_C TC = 70_C Unit TJ, Tstg _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t p 10 sec RthJA 40 50 Steady State RthJF 22 28 Unit _C/W Notes: a. Based on TC = 25_C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 sec d. Maximum under steady state conditions is 85 _C/W. Document Number: 73454 S–51450—Rev. A, 01-Aug-05 www.vishay.com 1 Si4884BDY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS VGS = 0 V, ID = 250 mA 30 Typ Max Unit Static Drain-Source Breakdown Voltage DVDS/TJ VDS Temperature Coefficient DVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea gfs 30 ID = 250 mA VGS(th) Temperature Coefficient V mV/_C 6 3 V VDS = 0 V, VGS = "20 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 10 VDS w 5 V, VGS = 10 V 1 30 mA A VGS = 10 V, ID = 10 A 0.007 0.0090 VGS = 4.5 V, ID = 8 A 0.0095 0.012 VDS = 15 V, ID = 10 A 45 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 1525 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 12 A Turn-On Delay Time Rise Time nC 1.4 2.2 18 30 160 240 18 30 tf 8 15 td(on) 8 15 11 18 22 35 8 15 td(off) Fall Time 17 f = 1 MHz tr Turn-Off Delay Time 35 10.5 4.3 td(off) Fall Time 23.5 VDS = 15 V, VGS = 4.5 V, ID= 12 A tr Turn-Off Delay Time pF 120 3 td(on) Rise Time 295 VDD = 15 V, RL = 1.5 W ID ^ 10 A, VGEN = 4.5 V, Rg = 1 W VDD = 15 V, RL = 1.5 W ID ^ 10 A, VGEN = 10 V, Rg = 1 W tf W ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25_C 4 A ISM VSD 50 IS = 2.3 A 0.75 1.1 V Body Diode Reverse Recovery Time trr 25 40 ns Body Diode Reverse Recovery Charge Qrr 15 25 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 9.5 9 5 A, A di/dt = 100 A/ms, A/ms TJ = 25_C 13 12 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73454 S–51450—Rev. A, 01-Aug-05 Si4884BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 1.2 1.0 I D – Drain Current (A) I D – Drain Current (A) VGS = 10 thru 4 V 40 30 20 0.8 0.6 TC = 125_C 0.4 25_C 10 0.2 3V –55_C 0 0.0 0.3 0.6 0.9 1.2 0.0 1.0 1.5 1.4 VDS – Drain-to-Source Voltage (V) 1.8 2.2 2.6 3.0 VGS – Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current and Gate Voltage 0.014 2000 0.012 1600 C – Capacitance (pF) rDS(on) – On-Resistance (W) Ciss VGS = 4.5 V 0.010 VGS = 10 V 0.008 0.006 1200 800 Coss 400 Crss 0.004 0 0 10 20 30 40 50 0 6 ID – Drain Current (A) 18 24 30 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Gate Charge 10 1.6 ID = 12 A ID = 10 A 8 1.4 VDS = 10 V 6 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 12 VDS = 15 V VDS = 20 V 4 2 1.2 1.0 0.8 0 0 5 10 15 Qg – Total Gate Charge (nC) Document Number: 73454 S–51450—Rev. A, 01-Aug-05 20 25 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si4884BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.05 rDS(on) – Drain-to-Source On-Resistance (W) 50 10 I S – Source Current (A) TJ = 150_C 1 0.1 TJ = 25_C 0.01 0.03 0.02 TJ = 125_C 0.01 TJ = 25_C 0.00 0.001 0.00 ID = 10 A 0.04 0.2 0.4 0.6 0.8 1.0 2 1.2 3 4 VSD – Source-to-Drain Voltage (V) Threshold Voltage 7 8 9 10 Single Pulse Power, Junction-to-Ambient 100 80 0.3 ID = 250 mA Power (W) VGS(th) (V) 6 VGS – Gate-to-Source Voltage (V) 0.6 0.0 –0.3 –0.6 –0.9 –50 5 60 40 20 –25 0 25 50 75 100 125 0 0.001 150 0.01 TJ – Temperature (_C) 0.1 1 10 Time (sec) Safe Operating Area, Junction-to-Ambient 100 *Limited by rDS(on) I D – Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TA = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73454 S–51450—Rev. A, 01-Aug-05 Si4884BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating* 20 ID – Drain Current (A) 16 12 8 4 0 0 25 50 75 100 125 150 TC – Case Temperature (_C) Power, Junction-to-Foot Power, Junction-to-Ambient 4.4 1.6 3.3 1.2 Power 2.0 Power 5.5 2.2 0.8 1.1 0.4 0.0 0.0 0 25 50 75 100 TC – Case Temperature (_C) 125 150 0 25 50 75 100 125 150 TC – Case Temperature (_C) *The power dissipation PD is based on TJ(max) = 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73454 S–51450—Rev. A, 01-Aug-05 www.vishay.com 5 Si4884BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85_C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 10–1 1 Square Wave Pulse Duration (sec) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73454. www.vishay.com 6 Document Number: 73454 S–51450—Rev. A, 01-Aug-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1