FAIRCHILD MMBT5550

MMBT5550
NPN General Purpose Amplifier
• This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
3
2
SOT-23
1 Marking: 1F
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * T
a
Symbol
= 25°C unless otherwise noted
Parameter
Value
Units
V
VCEO
Collector-Emitter Voltage
140
VCBO
Collector-Base Voltage
160
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector current
600
mA
TJ, Tstg
Junction and Storage Temperature
-55 ~ +150
°C
- Continuous
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
IC = 1.0mA, IB = 0
140
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100µA, IE = 0
160
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10mA, IC = 0
6.0
V
ICBO
Collector Cutoff Current
VCB = 100V, IE = 0
VCB = 100V, IE = 0, Ta = 100°C
100
100
nA
µA
IEBO
Emitter Cutoff Current
VEB = 4.0V, IC = 0
50
nA
On Characteristics
hFE
DC Current Gain
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
60
60
20
250
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.15
0.25
V
V
VBE(sat)
Base-Emitter On Voltage
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
1.0
1.2
V
V
©2005 Fairchild Semiconductor Corporation
MMBT5550 Rev. A
1
www.fairchildsemi.com
MMBT5550 NPN General Purpose Amplifier
August 2005
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Condition
Min.
Max.
Units
Small Signal Characteristics
fT
Current Gain Bandwidth Product
IC = 10mA, VCE = 10V,
f = 100MHz
50
MHz
Cobo
Output Capacitance
VCB = 10V, IE = 0, f = 1.0MHz
6.0
pF
Cibo
Input Capacitance
VBE = 0.5V, IC = 0, f = 1.0MHz
30
pF
Thermal Characteristics T =25°C unless otherwise noted
a
Max.
Units
PD
Symbol
Total Device Dissipation
Derate above 25°C
Parameter
350
2.8
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06."
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
1F
MMBT5550
SOT-23
7”
--
3,000
2
MMBT5550 Rev. A
www.fairchildsemi.com
MMBT5550 NPN General Purpose Amplifier
Electrical Characteristics
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
VCESAT - COLLECTOR EMITTER VOLTAGE (V)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
hFE - TYPICAL PULSED CURRENT GAIN
250
0.5
o
125 C
200
150
0.3
o
25 C
100
o
25 C
0.2
o
-40 C
50
0
0.1
o
125 C
0.1
VCE = 5V
o
- 40 C
0.0
0.2
0.5
1
2
5
10
20
50
100
IC - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
10
o
- 40 C
1.0
0.8
o
- 40 C
0.8
o
25 C
0.6
0.6
o
125 C
0.4
o
25 C
o
125 C
0.4
0.2
0.2
0.0
1
10
100
VCE = 5V
0.0
0.1
200
1
10
100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Input and Output Capacitance
vs Reverse Voltaget
30
50
f = 1.0 MHz
VCB = 100V
25
CAPACITANCE (pF)
I CBO- COLLE CTOR CURRENT (nA)
100
IC - COLLECTOR CURRENT (mA)
VBEON - BASE EMITTER ON VOLTAGE (V)
β = 10
1
Figure 4. Base-Emitter On Voltage
vs Collector Current
1.0
VBESAT - BASE EMITTER VOLTAGE (V)
β = 10
0.4
10
20
15
C ib
10
5
1
25
50
75
100
TA - AMBIE NT TEMP ERATURE ( ° C)
0
0.1
125
1
10
100
V CE - COLLECTOR VOLTAGE (V)
3
MMBT5550 Rev. A
C cb
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MMBT5550 NPN General Purpose Amplifier
Typical Performance Characteristics
MMBT5550 NPN General Purpose Amplifier
Typical Performance Characteristics
(Continued)
Figure 7. Power Dissipation vs
Ambient Temperature
PD-POWER DISSPATION (mW)
500
400
300
200
100
0
0
25
50
75
100
125
150
0
TEMPERATURE( C)
4
MMBT5550 Rev. A
www.fairchildsemi.com
MMBT5550 NPN General Purpose Amplifier
Mechanical Dimensions
SOT-23
Dimensions in Millimeters
5
MMBT5550 Rev. A
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or system whose failure to perform can be reasonably expected
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affect its safety or effectiveness.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
6
MMBT5550 Rev. A
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MMBT5550 NPN General Purpose Amplifier
TRADEMARKS