ISC 2SC2523

Inchange Semiconductor
Product Specification
2SC2523
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type 2SA1073
·Wide area of safe operation
APPLICATIONS
·High frequency power amplifier
·Audio power amplifiers
·Switching regulators
·DC-DC converters
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
Fig.1 simplified outline (TO-3) and symbol
2
Emitter
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
160
V
VCEO
Collector-emitter voltage
Open base
160
V
VEBO
Emitter-base voltage
Open collector
7
V
12
A
120
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2523
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;RBE=∞
160
V
V(BR)CBO
Collector-base breakdown voltage
IC=50μA ;IE=0
160
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50μA ;IC=0
7
V
Collector-emitter saturation voltage
IC=5A ;IB=0.5A
1.8
V
VBE
Base-emitter on voltage
IC=5A ; VCE=5V
1.7
V
ICBO
Collector cut-off current
VCB=160V; IE=0
50
μA
ICEO
Collector cut-off current
VCE=160V; RBE=∞
1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
50
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
60
hFE-2
DC current gain
IC=7A ; VCE=5V
40
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
300
pF
fT
Transition frequency
IC=1A ; VCE=10V;f=10MHz
50
MHz
VCEsat
CONDITIONS
2
MIN
TYP.
MAX
UNIT
200
Inchange Semiconductor
Product Specification
2SC2523
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3