AS7C33256PFS16A AS7C33256PFS18A March 2001 ® 3.3V 256K × 16/18 pipeline burst synchronous SRAM Features • Organization: 262,144 words × 16 or 18 bits • Fast clock speeds to 166 MHz in LVTTL/LVCMOS • Fast clock to data access: 3.5/3.8/4.0/5.0 ns • Fast OE access time: 3.5/3.8/4.0/5.0 ns • Fully synchronous register-to-register operation • “Flow-through” mode • Single-cycle deselect - Dual-cycle deselect also available (AS7C33256PFD16A/ AS7C33256PFD18A) • Pentium®* compatible architecture and timing • Asynchronous output enable control • Economical 100-pin TQFP package • Byte write enables • Multiple chip enables for easy expansion • 3.3V core power supply • 2.5V or 3.3V I/O operation with separate VDDQ • 30 mW typical standby power in power down mode • NTD™* pipeline architecture available (AS7C33256NTD16A/AS7C33256NTD18A) Logic block diagram Pin arrangement 18 A[17:0] Q D 18 256K × 16/18 Memory array 16 18 Address register CS 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 Burst logic NC NC NC VDDQ VSSQ NC NC DQb DQb VSSQ VDDQ DQb DQb FT VDD NC VSS DQb DQb VDDQ VSSQ DQb DQb DQpb/NC NC VSSQ VDDQ NC NC NC CLK 16/18 16/18 GWE BWb D DQb Q Byte Write registers BWE CLK D DQa Q BWa Byte Write registers CE0 CE1 CE2 D 2 CLK Enable Q register CE CLK ZZ Power down D OE Output registers CLK Input registers CLK Enable Q delay register CLK FT DATA [17:0] DATA [15:0] 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 TQFP 14 × 20mm A17 NC NC VDDQ VSSQ NC DQpa/NC DQa DQa VSSQ VDDQ DQa DQa VSS NC VDD ZZ DQa DQa VDDQ VSSQ DQa DQa NC NC VSSQ VDDQ NC NC NC LBO A5 A4 A3 A2 A1 A0 NC NC VSS VDD NC NC A10 A11 A12 A13 A14 A15 A16 OE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 CLK CS CLR CLK ADV ADSC ADSP A6 A7 CE0 CE1 NC NC BWb BWa CE2 VDD VSS CLK GWE BWE OE ADSC ADSP ADV A8 A9 LBO Note: pins 24, 74 are NC for ×16. Selection guide AS7C33256PFS16A AS7C33256PFS16A AS7C33256PFS16A AS7C33256PFS16A –166 –150 –133 –100 Units Minimum cycle time 6 6.7 7.5 10 ns Maximum pipelined clock frequency 166 150 133 100 MHz Maximum pipelined clock access time 3.5 3.8 4 5 ns Maximum operating current 475 450 425 325 mA Maximum standby current 130 110 100 90 mA Maximum CMOS standby current (DC) 30 30 30 30 mA * Pentium® is a registered trademark of Intel Corporation. NTD™ is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property of their respective owners. 3/14/01; V.1.0 Alliance Semiconductor P. 1 of 11 Copyright © Alliance Semiconductor. All rights reserved. AS7C33256PFS16A AS7C33256PFS18A ® Functional description The AS7C33256PFS16A and AS7C33256PFS18A are high performance CMOS 4 Mbit synchronous Static Random Access Memory (SRAM) devices organized as 262,144 words × 16 or 18 bits and incorporate a pipeline for highest frequency on any given technology. Timing for this device is compatible with existing Pentium® synchronous cache specifications. This architecture is suited for ASIC, DSP (TMS320C6X), and PowerPC™*-based systems in computing, datacomm, instrumentation, and telecommunications systems. Fast cycle times of 6/6.7/7.5/10 ns with clock access times (tCD) of 3.5/3.8/4.0/5.0 ns enable 166, 150, 133 and 100 MHz bus frequencies. Three chip enable inputs permit easy memory expansion. Burst operation is initiated in one of two ways: the controller address strobe (ADSC), or the processor address strobe (ADSP). The burst advance pin (ADV) allows subsequent internally generated burst addresses. Read cycles are initiated with ADSP (regardless of WE and ADSC) using the new external address clocked into the on-chip address register. When ADSP is sampled LOW, the chip enables are sampled active, and the output buffer is enabled with OE. In a read operation the data accessed by the current address, registered in the address registers by the positive edge of CLK, are carried to the data-out registers and driven on the output pins on the next positive edge of CLK. ADV is ignored on the clock edge that samples ADSP asserted but is sampled on all subsequent clock edges. Address is incremented internally for the next access of the burst when ADV is sampled LOW and both address strobes are HIGH. Burst operation is selectable with the LBO input. With LBO unconnected or driven HIGH, burst operations use a Pentium® count sequence. With LBO driven LOW the device uses a linear count sequence suitable for PowerPC™ and many other applications. Write cycles are performed by disabling the output buffers with OE and asserting a write command. A global write enable GWE writes all 16/ 18 bits regardless of the state of individual BW[a:b] inputs. Alternately, when GWE is HIGH, one or more bytes may be written by asserting BWE and the appropriate individual byte BWn signal(s). BWn is ignored on the clock edge that samples ADSP LOW, but is sampled on all subsequent clock edges. Output buffers are disabled when BWn is sampled LOW (regardless of OE). Data is clocked into the data input register when BWn is sampled LOW. Address is incremented internally to the next burst address if BWn and ADV are sampled LOW. Read or write cycles may also be initiated with ADSC instead of ADSP. The differences between cycles initiated with ADSC and ADSP follow. • ADSP must be sampled HIGH when ADSC is sampled LOW to initiate a cycle with ADSC. • WE signals are sampled on the clock edge that samples ADSC LOW (and ADSP HIGH). • Master chip select CE0 blocks ADSP, but not ADSC. The AS7C33256PFS16A and AS7C33256PFS18A operate from a 3.3V supply. I/Os use a separate power supply that can operate at 2.5V or 3.3V. These devices are available in a 100-pin 14×20 mm TQFP packaging. *PowerPC™ is a tradenark International Business Machines Corporation. Capacitance Parameter Symbol Signals Test conditions Max Unit Input capacitance CIN Address and control pins VIN = 0V 5 pF I/O capacitance CI/O I/O pins VIN = VOUT = 0V 7 pF Write enable truth table (per byte) GWE BWE BWn WEn L X X T H L L T H H X F* H L H F* Key: X = Don’t Care, L = Low, H = High, T=True, F=False * valid read n = a,b WE, WEn = internal write signal 3/14/01; V.1.0 Alliance Semiconductor P. 2 of 11 AS7C33256PFS16A AS7C33256PFS18A ® Signal descriptions Signal I/O Properties Description CLK I CLOCK A0–A17 I SYNC Address. Sampled when all chip enables are active and ADSC or ADSP are asserted. DQ[a,b] I/O SYNC Data. Driven as output when the chip is enabled and OE is active. CE0 I SYNC Master chip enable. Sampled on clock edges when ADSP or ADSC is active. When CE0 is inactive, ADSP is blocked. Refer to the Synchronous Truth Table for more information. CE1, CE2 I SYNC Synchronous chip enables. Active HIGH and active LOW, respectively. Sampled on clock edges when ADSC is active or when CE0 and ADSP are active. ADSP I SYNC Address strobe (processor). Asserted LOW to load a new address or to enter standby mode. ADSC I SYNC Address strobe (controller). Asserted LOW to load a new address or to enter standby mode. ADV I SYNC Burst advance. Asserted LOW to continue burst read/write. GWE I SYNC Global write enable. Asserted LOW to write all 16/18 bits. When HIGH, BWE and BW[a,b] control write enable. BWE I SYNC Byte write enable. Asserted LOW with GWE = HIGH to enable effect of BW[a,b] inputs. BW[a,b] I SYNC Write enables. Used to control write of individual bytes when GWE = HIGH and BWE = LOW. If any of BW[a,b] is active with GWE = HIGH and BWE = LOW the cycle is a write cycle. If all BW[a,b] are inactive, the cycle is a read cycle. OE I ASYNC Asynchronous output enable. I/O pins are driven when OE is active and the chip is in read mode. LBO I FT I STATIC Flow-through mode.When LOW, enables single register flow-through mode. Connect to VDD if unused or for pipelined operation. ZZ I ASYNC Sleep. Places device in low power mode; data is retained. Connect to GND if unused. Clock. All inputs except OE, FT, ZZ, LBO are synchronous to this clock. Count mode. When driven HIGH, count sequence follows Intel XOR convention. STATIC default = When driven LOW, count sequence follows linear convention. This signal is HIGH internally pulled HIGH. Absolute maximum ratings Parameter Symbol Min Max Unit VDD, VDDQ –0.5 +4.6 V Input voltage relative to GND (input pins) VIN –0.5 VDD + 0.5 V Input voltage relative to GND (I/O pins) VIN –0.5 VDDQ + 0.5 V Power dissipation PD – 1.8 W DC output current IOUT – 50 mA Storage temperature (plastic) Tstg –65 +150 °C Temperature under bias Tbias –65 +135 °C Power supply voltage relative to GND Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect reliability. 3/14/01; V.1.0 Alliance Semiconductor P. 3 of 11 AS7C33256PFS16A AS7C33256PFS18A ® Synchronous truth table CE0 H L L L L L L L L X X X X H H H H L X H X H CE1 X L L X X H H H H X X X X X X X X H X X X X CE2 X X X H H L L L L X X X X X X X X L X X X X ADSP X L H L H L L H H H H H H X X X X H H X H X ADSC L X L X L X X L L H H H H H H H H L H H H H ADV X X X X X X X X X L L H H L L H H X L L H H WEn1 X X X X X X X F F F F F F F F F F T T T T T Key: X = Don’t Care, L = Low, H = High. 1See “Write enable truth table” on page 2 for more information. 2 Q in flow through mode 3 For write operation following a READ, OE must be HIGH before OE X X X X X L H L H L H L H L H L H X X X X X Address accessed NA NA NA NA NA External External External External Next Next Current Current Next Next Current Current External Next Next Current Current CLK L to H L to H L to H L to H L to H L to H L to H L to H L to H L to H L to H L to H L to H L to H L to H L to H L to H L to H L to H L to H L to H L to H Operation Deselect Deselect Deselect Deselect Deselect Begin read Begin read Begin read Begin read Cont. read Cont. read Suspend read Suspend read Cont. read Cont. read Suspend read Suspend read Begin write Cont. write Cont. write Suspend write Suspend write DQ Hi−Z Hi−Z Hi−Z Hi−Z Hi−Z Hi−Z2 Hi−Z Hi−Z2 Hi−Z Q Hi−Z Q Hi−Z Q Hi−Z Q Hi−Z D3 D D D D the input data set up time and held HIGH throughout the input hold time. Recommended operating conditions Parameter Symbol Min Nominal Max VDD 3.135 3.3 3.6 VSS 0.0 0.0 0.0 3.3V I/O supply voltage VDDQ 3.135 3.3 3.6 VSSQ 0.0 0.0 0.0 2.5V I/O supply voltage VDDQ 2.35 2.5 2.9 VSSQ 0.0 0.0 0.0 VIH 2.0 – VDD + 0.3 VIL –0.5* – 0.8 VIH 2.0 – VDDQ + 0.3 VIL –0.5* – 0.8 TA 0 – 70 Supply voltage Input voltages† Address and control pins I/O pins Ambient operating temperature Unit V V V V V °C * VIL min = –2.0V for pulse width less than 0.2 × tRC. † Input voltage ranges apply to 3.3V I/O operation. For 2.5V I/O operation, contact factory for input specifications. 3/14/01; V.1.0 Alliance Semiconductor P. 4 of 11 AS7C33256PFS16A AS7C33256PFS18A ® TQFP thermal resistance Description Conditions Thermal resistance (junction to ambient)* Symbol Typical Units θJA 46 °C/W θJC 2.8 °C/W Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51 Thermal resistance (junction to top of case)* * This parameter is sampled. DC electrical characteristics –166 Parameter –150 –133 –100 Symbol Test conditions Input leakage current* |ILI| VDD = Max, VIN = GND to VDD – 2 – 2 – 2 – 2 µA Output leakage current |ILO| OE ≥ VIH, VDD = Max, VOUT = GND to VDD – 2 – 2 – 2 – 2 µA ICC CE0 = VIL, CE1 = VIH, CE2 = VIL, f = fMax, IOUT = 0 mA – 475 – 450 – 425 – 325 mA ISB Deselected, f = fMax, ZZ ≤ VIL – 130 – 110 – 100 – 90 ISB1 Deselected, f = 0, ZZ ≤ 0.2V all VIN ≤ 0.2V or ≥ VDD – 0.2V – 30 – 30 – 30 – 30 ISB2 Deselected, f = fMax, ZZ ≥ VDD – 0.2V All VIN ≤ VIL or ≥ VIH – 30 – 30 – 30 – 30 VOL IOL = 8 mA, VDDQ = 3.465V – 0.4 – 0.4 – 0.4 – 0.4 VOH IOH = –4 mA, VDDQ = 3.135V 2.4 – 2.4 – 2.4 – 2.4 – Operating power supply current Standby power supply current Output voltage Min Max Min Max Min Max Min Max Unit mA V * LBO pin has an internal pull-up and input leakage = ±10 µa. Note: ICC give with no output loading. ICC increases with faster cycle times and greater output loading. DC electrical characteristics for 2.5V I/O operation –166 Parameter Output leakage current Output voltage –150 –133 –100 Symbol Test conditions Min Max Min Max Min Max Min Max Unit |ILO| OE ≥ VIH, VDD = Max, VOUT = GND to VDD –1 1 –1 1 –1 1 –1 1 VOL IOL = 2 mA, VDDQ = 2.65V – 0.7 – 0.7 – 0.7 – 0.7 VOH IOH = –2 mA, VDDQ = 2.35V 1.7 – 1.7 – 1.7 – 1.7 – µA V Timing characteristics over operating range –166 Parameter Symbol Min –150 –133 –100 Max Min Max Min Max Min Max Unit Clock frequency fMax – 166 – 150 – 133 – 100 MHz Cycle time (pipelined mode) tCYC 6 – 6.6 – 7.5 – 10 – ns Cycle time (flow-through mode) tCYCF 10 – 10 – 12 – 12 – ns tCD – 3.5 – 3.8 – 4.0 – 5.0 ns Clock access time (pipelined mode) 3/14/01; V.1.0 Alliance Semiconductor Notes* P. 5 of 11 AS7C33256PFS16A AS7C33256PFS18A ® –166 Parameter Symbol Min –150 –133 –100 Max Min Max Min Max Min Max Unit Notes* Clock access time (flow-through mode) tCDF – 9 – 10 – 10 – 12 ns Output enable LOW to data valid tOE – 3.5 – 3.8 – 4.0 – 5.0 ns Clock HIGH to output Low Z tLZC 0 – 0 – 0 – 0 – ns 2,3,4 Data output invalid from clock HIGH tOH 1.5 – 1.5 – 1.5 – 1.5 – ns 2 Output enable LOW to output Low Z tLZOE 0 – 0 – 0 – 0 – ns 2,3,4 Output enable HIGH to output High Z tHZOE – 3.5 – 3.8 – 4.0 – 4.5 ns 2,3,4 Clock HIGH to output High Z tHZC – 3.5 – 3.8 – 4.0 – 5.0 ns 2,3,4 Output enable HIGH to invalid output tOHOE 0 – 0 – 0 – 0 – ns Clock HIGH pulse width tCH 2.4 – 2.5 – 2.5 – 3.5 – ns 5 Clock LOW pulse width tCL 2.4 – 2.5 – 2.5 – 3.5 – ns 5 Address setup to clock HIGH tAS 1.5 – 1.5 – 1.5 – 2.0 – ns 6 Data setup to clock HIGH tDS 1.5 – 1.5 – 1.5 – 2.0 – ns 6 Write setup to clock HIGH tWS 1.5 – 1.5 – 1.5 – 2.0 – ns 6,7 Chip select setup to clock HIGH tCSS 1.5 – 1.5 – 1.5 – 2.0 – ns 6,8 Address hold from clock HIGH tAH 0.5 – 0.5 – 0.5 – 0.5 – ns 6 Data hold from clock HIGH tDH 0.5 – 0.5 – 0.5 – 0.5 – ns 6 Write hold from clock HIGH tWH 0.5 – 0.5 – 0.5 – 0.5 – ns 6,7 Chip select hold from clock HIGH tCSH 0.5 – 0.5 – 0.5 – 0.5 – ns 6,8 ADV setup to clock HIGH tADVS 1.5 – 1.5 – 1.5 – 2.0 – ns 6 ADSP setup to clock HIGH tADSPS 1.5 – 1.5 – 1.5 – 2.0 – ns 6 ADSC setup to clock HIGH tADSCS 1.5 – 1.5 – 1.5 – 2.0 – ns 6 ADV hold from clock HIGH tADVH 0.5 – 0.5 – 0.5 – 0.5 – ns 6 ADSP hold fromclock HIGH tADSPH 0.5 – 0.5 – 0.5 – 0.5 – ns 6 ADSC hold from clock HIGH tADSCH 0.5 – 0.5 – 0.5 – 0.5 – ns 6 *“Notes” column refers to “notes” on page 10. Key to switching waveforms Rising input 3/14/01; V.1.0 Falling input Alliance Semiconductor Undefined/don’t care P. 6 of 11 AS7C33256PFS16A AS7C33256PFS18A ® Timing waveform of read cycle tCH tCYC tCL CLK tADSPS tADSPH ADSP tADSCS tADSCH ADSC tAS LOAD NEW ADDRESS tAH Address A1 A2 A3 tWS tWH GWE, BWE tCSS tCSH CE0, CE2 CE1 tADVS tADVH ADV OE tCD tHZOE tOH ADV INSERTS WAIT STATES tHZC DOUT (pipelined mode) t OE tLZOE DOUT (flow-through mode) Q(A1) Q(A1) Q(A2) Q(A2Ý01) Q(A2Ý01) Q(A2Ý10) Q(A2Ý10) Q(A2Ý11) Q(A2Ý11) Q(A3) Q(A3) Q(A3Ý01) Q(A3Ý01) Q(A3Ý10) Q(A3Ý10) Q(A3Ý11) tHZC Note: Ý = XOR when MODE = HIGH/No Connect; Ý = ADD when MODE = LOW. BW[a:b] is don’t care. 3/14/01; V.1.0 Alliance Semiconductor P. 7 of 11 AS7C33256PFS16A AS7C33256PFS18A ® Timing waveform of write cycle tCYC tCH tCL CLK tADSPS tADSPH ADSP tADSCS tADSCH ADSC ADSC LOADS NEW ADDRESS tAS tAH Address A1 A2 A3 tWS tWH BWE BWa,b tCSS tCSH CE0, CE2 CE1 tADVS ADV SUSPENDS BURST tADVH ADV OE tDS tDH Data In D(A1) D(A2) D(A2Ý01) D(A2Ý01) D(A2Ý10) D(A2Ý11) D(A3) D(A3Ý01) D(A3Ý10) Note: Ý = XOR when MODE = HIGH/No Connect; Ý = ADD when MODE = LOW. 3/14/01; V.1.0 Alliance Semiconductor P. 8 of 11 AS7C33256PFS16A AS7C33256PFS18A ® Timing waveform of read/write cycle tCYC tCH tCL CLK tADSPS tADSPH ADSP tAS tAH Address A2 A1 A3 tWS tWH GWE CE0, CE2 CE1 tADVS tADVH ADV OE tDS tDH D(A2) DIN tLZC tHZOE tCD Q(A1) DOUT (pipeline mode) tOH tLZOE tOE Q(A3) Q(A3Ý01) Q(A3Ý10) Q(A3Ý11) tCDF DOUT (flow-through mode) Q(A1) Q(A3Ý01) Q(A3Ý10) Q(A3Ý11) Note: Ý = XOR when MODE = HIGH/No Connect; Ý = ADD when MODE = LOW. 3/14/01; V.1.0 Alliance Semiconductor P. 9 of 11 AS7C33256PFS16A AS7C33256PFS18A ® AC test conditions • Output load: see Figure B, except for tLZC, tLZOE, tHZOE, tHZC, see Figure C. Thevenin equivalent: • Input pulse level: GND to 3V. See Figure A. • Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A. +3.3V for 3.3V I/O; +2.5V for 2.5V I/O • Input and output timing reference levels: 1.5V. +3.0V Z0 = 50Ω 90% 10% GND 90% 10% DOUT Figure A: Input waveform 50Ω DOUT VL = 1.5V for 3.3V I/O; 30 pF* = V DDQ/2 for 2.5V I/O 351Ω Figure B: Output load (A) 317Ω 5 pF* GND *including scope and jig capacitance Figure C: Output load(B) Notes 1) For test conditions, see AC Test Conditions, Figures A, B, C. 2) This parameter measured with output load condition in Figure C. 3) This parameter is sampled, but not 100% tested. 4) tHZOE is less than tLZOE; and tHZC is less than tLZC at any given temperature and voltage. 5) tCH measured as HIGH above VIH and tCL measured as LOW below VIL. 6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled. 7) Write refers to GWE, BWE, BW[a:d]. 8) Chip select refers to CE0, CE1, CE2. Package Dimensions 100-pin quad flat pack (TQFP) A1 A2 b c D E e Hd He L L1 α TQFP Min Max 0.05 0.15 1.35 1.45 0.22 0.38 0.09 0.20 13.90 14.10 19.90 20.10 0.65 nominal 15.90 16.10 21.90 22.10 0.45 0.75 1.00 nominal 0° 7° Hd D b e He E Dimensions in millimeters α c L1 L 3/14/01; V.1.0 A1 A2 Alliance Semiconductor P. 10 of 11 AS7C33256PFS16A AS7C33256PFS18A ® Ordering information –166 MHz –150 MHz –133 MHz –100 MHz AS7C33256PFS16A-166TQC AS7C33256PFS16A-150TQC AS7C33256PFS16A-133TQC AS7C33256PFS16A-100TQC AS7C33256PFS16A-166TQI AS7C33256PFS16A-150TQI AS7C33256PFS16A-133TQI AS7C33256PFS18A-166TQC AS7C33256PFS18A-150TQC AS7C33256PFS18A-133TQC AS7C33256PFS18A-100TQC AS7C33256PFS18A-166TQI AS7C33256PFS18A-150TQI AS7C33256PFS18A-133TQI AS7C33256PFS16A-100TQI AS7C33256PFS18A-100TQI Part numbering guide AS7C 33 256 PF S 16/18 A –XXX TQ C/I 1 2 3 4 5 6 7 8 9 10 1.Alliance Semiconductor SRAM prefix 2.Operating voltage: 33=3.3V 3.Organization: 256=256K 4.Pipeline-Flowthrough (each device works in both modes) 5.Deselect: S=Single cycle deselect 6.Organization: 16=x16; 18=x18 7.Production version: A=first production version 8.Clock speed (MHz) 9.Package type: TQ=TQFP 10.Operating temperature: C=Commercial (0° C to 70° C); I=Industrial (-40° C to 85° C) 3/14/01; V.1.0 Alliance Semiconductor P. 11 of 11 © Copyright Alliance Semiconductor Corporation. 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