APTGF90H60T3G Full - Bridge NPT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 Q1 CR3 CR1 18 19 Q2 22 7 23 8 CR2 26 Q3 11 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 10 CR4 Q4 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 VCES = 600V IC = 90A @ Tc = 80°C 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS compliant Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 120 90 315 ±20 416 Tj = 125°C 200A@500V TC = 25°C TC = 80°C TC = 25°C Unit V A April, 2009 Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTGF90H60T3G – Rev 1 Symbol VCES APTGF90H60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Test Conditions Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Typ VGE = 0V VCE = 600V Zero Gate Voltage Collector Current VCE(on) Min 1.7 2.0 2.2 4 Max 250 500 2.45 Unit µA V 6 400 V nA Max Unit Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =100A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 100A RG = 1.2Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 100A RG = 1.2Ω VGE = 15V Tj = 125°C VBus = 400V IC = 100A Tj = 125°C RG = 1.2Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Min Typ 4400 645 401 331 40 200 40 9 120 pF nC ns 15 42 10 ns 130 22 1 mJ 2 450 A Reverse diode ratings and characteristics IRM Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 600 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ VR=600V IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =400A/µs www.microsemi.com V Tj = 25°C Tj = 125°C Tc = 90°C Unit 35 600 Tj = 150°C 60 1.8 2.2 1.5 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 25 160 70 960 µA A 2.2 V April, 2009 VRRM Test Conditions ns nC 2-7 APTGF90H60T3G – Rev 1 Symbol Characteristic APTGF90H60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min Typ 50 5 3952 4 Max Unit kΩ % K % Min Typ Max 0.3 0.65 Unit T25 = 298.15 K TC=100°C RT = R25 T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T ⎡ ⎛ 1 exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 110 °C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-7 APTGF90H60T3G – Rev 1 28 17 1 April, 2009 SP3 Package outline (dimensions in mm) APTGF90H60T3G Typical IGBT Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 200 250µs Pulse Test < 0.5% Duty cycle Ic, Collector Current (A) 150 TJ=25°C TJ=125°C 100 50 0 250µs Pulse Test < 0.5% Duty cycle 150 TJ=25°C 100 TJ=125°C 50 0 0 1 2 3 4 0 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 250µs Pulse Test < 0.5% Duty cycle 150 100 50 TJ=125°C TJ=25°C 0 0 1 2 3 4 5 6 7 8 VGE, Gate to Emitter Voltage (V) VCE=120V IC = 100A TJ = 25°C 16 14 VCE=300V 12 VCE=480V 10 8 6 4 2 0 0 9 50 100 150 200 250 300 350 400 Gate Charge (nC) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 140 1.20 Ic, DC Collector Current (A) 1.10 1.00 0.90 0.80 25 50 75 100 125 TJ, Junction Temperature (°C) 120 100 80 60 40 20 0 25 50 75 100 125 150 TC, Case Temperature (°C) April, 2009 Collector to Emitter Breakdown Voltage (Normalized) Gate Charge 18 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 200 4 www.microsemi.com 4-7 APTGF90H60T3G – Rev 1 Ic, Collector Current (A) 200 APTGF90H60T3G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VGE = 15V 50 40 Tj = 125°C VCE = 400V RG = 1.2Ω 30 20 0 50 100 150 200 250 175 150 VGE=15V, TJ=125°C 125 100 75 VCE = 400V RG = 1.2Ω 50 300 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 400V RG = 1.2Ω tf, Fall Time (ns) tr, Rise Time (ns) VGE=15V, TJ=125°C 250 300 40 TJ = 125°C 30 20 TJ = 25°C 0 0 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) 0 300 Turn-On Energy Loss vs Collector Current TJ=125°C, VGE=15V VCE = 400V RG = 1.2Ω 3 Eoff, Turn-off Energy Loss (mJ) 4 Eon, Turn-On Energy Loss (mJ) 200 10 10 2 1 0 0 50 100 150 200 250 300 50 100 150 200 250 ICE, Collector to Emitter Current (A) 300 Turn-Off Energy Loss vs Collector Current 5 VCE = 400V VGE = 15V RG = 1.2Ω 4 TJ = 125°C 3 2 1 0 0 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 6 250 Eon, 100A 4 3 Eoff, 100A 2 1 200 150 April, 2009 VCE = 400V VGE = 15V TJ= 125°C 5 IC, Collector Current (A) Switching Energy Losses (mJ) 150 VCE = 400V, VGE = 15V, RG = 1.2Ω 50 40 20 100 Current Fall Time vs Collector Current 60 30 50 ICE, Collector to Emitter Current (A) 60 50 VGE=15V, TJ=25°C 100 50 Eon, 100A 0 0 0 2 4 6 8 10 Gate Resistance (Ohms) 12 www.microsemi.com 0 200 400 600 VCE, Collector to Emitter Voltage (V) 5-7 APTGF90H60T3G – Rev 1 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 60 APTGF90H60T3G Capacitance vs Collector to Emitter Voltage Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 10000 C, Capacitance (pF) Cies 1000 Coes Cres 100 0 10 20 30 40 240 200 ZVS 160 ZCS 120 80 hard switching 40 0 0 50 VCE = 400V D = 50% RG = 1.2Ω TJ = 125°C TC= 75°C VCE, Collector to Emitter Voltage (V) 40 80 120 160 200 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.7 0.2 0.1 0.5 0.3 0.1 0.05 0 0.00001 0.05 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 April, 2009 0.15 www.microsemi.com 6-7 APTGF90H60T3G – Rev 1 Thermal Impedance (°C/W) 0.35 APTGF90H60T3G Typical diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.7 0.9 0.6 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.05 0.1 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 200 160 TJ=125°C 120 80 40 TJ=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 TJ=125°C VR=400V 150 125 120 A 100 60 A 75 30 A 50 3.0 0 400 TJ=125°C VR=400V 120 A 2 60 A 30 A 1 0 0 400 800 1200 1600 2000 2400 IRRM, Reverse Recovery Current (A) IRRM vs. Current Rate of Charge 50 TJ=125°C VR=400V 40 120 A 30 60 A 30 A 20 10 0 0 400 800 -diF/dt (A/µs) 1200 1600 2000 2400 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 100 400 Duty Cycle = 0.5 TJ=175°C 80 300 IF(AV) (A) C, Capacitance (pF) 1200 1600 2000 2400 200 100 60 40 20 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 April, 2009 QRR, Reverse Recovery Charge (µC) QRR vs. Current Rate Charge 3 800 -diF/dt (A/µs) VF, Anode to Cathode Voltage (V) 175 Case Temperature (°C) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APTGF90H60T3G – Rev 1 IF, Forward Current (A) Trr vs. Current Rate of Charge 175 240