VISHAY DG2034DQ-T1-E3

DG2034
Vishay Siliconix
Single 4:1 Low rON Multiplexers
DESCRIPTION
The DG2034 is a low voltage, low rON, high bandwidth single
4 to 1 analog multiplexer designed for high performance
switching of analog and video signals. Combining low power;
fast switching; low on-resistance, flatness and matching; and
small physical size, the DG2034 is ideal for portable and
battery applications.
Built on Vishay Siliconix’s low voltage CMOS process, the
DG2034 has an epitaxial layer which prevents latchup.
Break-before-make is guaranteed.
FEATURES
• Low voltage operation (1.8 V to 5.5 V)
•
•
•
•
Low on-resistance - rDS(on): 4 Ω
Off-isolation and crosstalk: - 55 dB at 10 MHz
Fast switch - 25 ns tON
Low charge injection - QINJ: 4.7 pC
RoHS
COMPLIANT
• Low power consumption - 4 µW
BENEFITS
•
•
•
•
•
High accuracy
High bandwidth
TTL and low voltage logic compatibility
Low power consumption
Reduced PCB space
APPLICATIONS
•
•
•
•
•
Mixed signal routing
Portable and battery operated systems
Low voltage data acquisition
Modems
PCMCIA cards
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
12-Pin QFN (3 x 3 mm)
A0
NC
A1
12
11
10
MSOP-10
Logic
S1
1
9
S2
GND
2
8
COM
S3
3
7
S4
4
5
6
EN
NC
V+
10
A1
2
9
S2
GND
3
8
COM
S3
4
7
S4
EN
5
6
V+
A0
1
S1
Logic
Top View
Top View
TRUTH TABLE
ORDERING INFORMATION
A1
A0
EN
ON Switch
X
X
0
None
0
0
1
S1
0
1
1
S2
1
0
1
S3
1
1
1
S4
Document Number: 72418
S-80164-Rev. D, 28-Jan-08
Temp Range
- 40 °C to 85 °C
Package
MSOP-10
Part Number
DG2034DQ-T1-E3
12-pin QFN (3 x 3 mm)
DG2034DN-T1-E4
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DG2034
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Referenced V+ to GND
Unit
- 0.3 to + 6
AX, EN, SX, COMa
V
- 0.3 to (V+ + 0.3)
Continuous Current (Any Terminal)
± 50
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 100
Power Dissipation (Packags)b
QFN-12 (3 x 3 mm)c
1295
d
320
MSOP-10
mA
mW
Storage Temperature (D Suffix)
- 65 to 150
°C
Notes:
a. Signals on SX, DX, EN or AX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 16.2 mV/°C above 70 °C.
d. Derate 4.0 mV/°C above 70 °C.
SPECIFICATIONS (V+ = 3 V)
Parameter
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VAL = 0.4 V, VAH = 1.5 Ve
Limits
- 40 to 85 °C
Temp.a
Min.c
VANALOG
Full
0
rON
Room
Full
4
7
9
Room
0.1
0.3
Room
0.3
1.5
Symbol
Typ.b
Max.c
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
ΔrON
rON Match
rON
Flatness
rON Flatnessd,f
Off Leakage Currentg
IS(off)
V+ = 2.7 V, VCOM = 0.5 V/1.5 V/2.0 V
IS = 10 mA
V+ = 3.3 V, VS = 1 V/3 V
VCOM = 3 V/1 V, VEN = 0 V
Room
Full
-1
- 10
0.3
1
10
Room
Full
-1
- 10
0.3
1
10
0.3
1
10
COM Off Leakage Currentg
ICOM(off)
Channel-On Leakage Currentg
ICOM(on)
V+ = 3.3 V
VCOM = VS = 1 V/3 V
Room
Full
-1
- 10
IA or IEN
VA/EN = 0 or V+, See Truth Table
Full
- 1.0
1.5
Ω
nA
Digital Control
Input Currentd
1.0
d
Input High Voltage
VAH or VENH
Full
d
VAL or VENL
Full
Turn-On Time
tON
Room
Full
25
35
45
Turn-Off Time
tOFF
Room
Full
15
25
35
Room
10.5
Room
Full
30
Input Low Voltage
0.4
µA
V
Dynamic Characteristics
Break-Before-Make Timed
VS = 1.5 V, RL = 300 Ω
tD
Transition Time
ttrans
VS = 1.5 V/0 V, VS = 0 V/1.5 V, RL = 300 Ω
Charge Injectiond
QINJ
CL = 1 nF, Vgen = 0 V, Rgen = 0 Ω
Off-Isolationd
OIRR
Channel-to-Channel Crosstalkd
Off
Capacitanced
COM Off
XTALK
RL = 50 Ω, CL = 5 pF
RL = 50 Ω, CL = 5 pF
Room
- 4.7
f = 1 MHz
Room
- 73
f = 10 MHz
Room
- 54
f = 1 MHz
Room
- 77
f = 10 MHz
Room
- 59
Room
14
Room
46
Room
67
CS(off)
Capacitanced
CCOM(off)
d
CCOM(on)
COM On Capacitance
V+ = 2.7 V, f = 1 MHz
ns
45
55
pC
dB
pF
Power Supply
Power Supply Range
V+
Power Supply Currentd
I+
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2
2.7
V+ = 3.3 V, VA/EN = 0 or 3.3 V, See Truth Table
Full
3.3
V
1.0
µA
Document Number: 72418
S-80164-Rev. D, 28-Jan-08
DG2034
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Parameter
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VAL = 0.8 V or VAH = 2.4 Ve
Limits
- 40 to 85 °C
Temp.a
Min.c
VANALOG
Full
0
rON
Symbol
Typ.b
Max.c
Unit
V+
V
Room
Full
3
5.5
7
Room
0.16
0.5
Room
0.6
1.5
Analog Switch
Analog Signal Ranged
On-Resistance
ΔrON
rON Match
rON Flatness
rON
Flatness
d,f
IS(off)
Off Leakage Current
V+ = 4.5 V, VCOM = 1.5 V/2.5 V/3.5 V
IS = 10 mA
V+ = 5.5 V, VS = 1 V/4.5 V
VCOM = 4.5 V/1 V, VEN = 0 V
Room
Full
-1
- 10
0.5
1
10
Room
Full
-1
- 10
0.5
1
10
0.5
1
10
COM Off Leakage Current
ICOM(off)
Channel-On Leakage Current
ICOM(on)
V+ = 5.5 V, VCOM = VS = 1 V/4.5 V
Room
Full
-1
- 10
IAH or IENH
VA or VEN = 0 or V+, See Truth Table
Full
- 1.0
VAH or VENH
Full
2.4
VAL or VENL
Full
Turn-On Time
tON
Room
Full
18
30
40
Turn-Off Time
tOFF
Room
Full
12
20
30
Room
10.5
Room
Full
25
Ω
nA
Digital Control
Input Currentd
Input High Voltage
d
Input Low Voltaged
1.0
0.8
µA
V
Dynamic Characteristics
Break-Before-Make Timed
VS = 3.0 V, RL = 300 Ω
tD
VS = 3 V/0 V, VS = 0 V/3 V, RL = 300 Ω
Transition Time
ttrans
Off-Isolationd
OIRR
RL = 50 Ω, CL = 5 p
Channel-to-Channel Crosstalkd
XTALK
RL = 50 Ω, CL = 5 pF
Charge Injection
QINJ
d
CS(off)
Capacitanced
CCOM(off)
d
CCOM(on)
Off Capacitance
COM Off
d
COM On Capacitance
f = 1 MHz
Room
- 73
f = 10 MHz
Room
- 53.5
f = 1 MHz
Room
- 77
f = 10 MHz
CL = 1 nF, Vgen = 0 V, Rgen = 0 Ω
V+ = 5 V, f = 1 MHz
Room
- 60.2
Room
- 4.4
Room
13
Room
43
Room
64
ns
40
50
dB
pC
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
4.5
V+ = 5.5 V, VA/EN = 0 or 5.5 V, See Truth Table
Full
5.5
V
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, not subjected to production test.
e. VA, EN = input voltage to perform proper function.
f. Difference of min and max values.
g. Guaranteed by 5 V testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 72418
S-80164-Rev. D, 28-Jan-08
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DG2034
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5.0
12
4.5
V+ = 2.7 V
8
rON - On-Resistance (Ω)
rON - On-Resistance (Ω)
10
V+ = 1.8 V
V+ = 2.7 V
6
V+ = 3.3 V
4
V+ = 5.5 V
4.0
C
3.5
A
2.5
B
2.0
A
1.5
A = 85 °C
B = 25 °C
C = - 40 °C
1.0
2
0.5
0.0
0.0
0
0
1
2
3
4
5
6
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
rON vs. Analog Voltage and Temperature
rON vs. VCOM and Supply Voltage
10 m
10000
1m
I+ - Supply Current (A)
V+ = 5.5 V
I+ - Supply Current (pA)
V+ = 4.5 V
C
B
3.0
1000
V+ = 5.5 V
100 µ
10 µ
1µ
100 n
10 n
100
- 75
- 50
- 25
0
25
50
75
100
1n
10
125
1K
10 K
100 K
1M
10 M
Temperature (°C)
Input Switching Frequency (Hz)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
400
10000
V+ = 5.5 V
VCOM = 4.5 V
VS = 1.0 V
200
IS( off )
100
V+ = 5.5 V
0
1000
Leakage Current (pA)
Leakage Current (pA)
100
10
- 200
- 400
ICOM(on)
IS(off)
- 600
- 800
ICOM(off)
- 1000
ICOM( on )
- 1200
ICOM( off )
1
- 75
- 50
- 25
0
25
50
75
Temperature (°C)
Leakage Current vs. Temperature
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100
125
- 1400
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VS - Analog Voltage (V)
Leakage vs. Analog Voltage
Document Number: 72418
S-80164-Rev. D, 28-Jan-08
DG2034
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
30
tON V+ = 3.3 V
20
tON V+ = 5.5 V
15
tOFF V+ = 3.3 V
10
- 20
Loss, OIRR, X TALK (dB)
t ON , t OFF - Switching Time (ns)
Loss
0
25
tOFF V+ = 5.5 V
- 40
OIRR
- 60
XTALK
- 80
5
V+ = 3.3 V
RL = 50 Ω
- 100
0
- 80 - 60 - 40 - 20
- 120
0
20
40
60
80 100 120 140
10 k
100 k
10 M
100 M
Frequency (Hz)
Switching Time vs. Temperature
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
1G
3
2.2
Q - Charge Injection (pC)
2
VT - Switching Threshold (V)
1M
Temperature (°C)
1.8
1.4
1.0
V+ = 5.5 V
1
0
-1
-2
V+ = 3.3 V
-3
V+ = 1.8 V
-4
0.6
CL = 1 nF
-5
-6
0.2
1
2
3
4
5
0
6
1
2
3
4
5
6
VCOM - Analog Voltage (V)
V+ - Supply Voltage (V)
Charge Injection vs. Analog Voltage
Switching Threshold vs. Supply Voltage
35
RL = 300 Ω
30
tTRANS- , V+ = 3.0 V
tTRANS+, V+ = 3.3 V
25
20
tTRANS- , V+ = 5.5 V
15
tTRANS+, V+ = 5.5 V
10
- 80 - 60 - 40 - 20
0
20
40
60
80 100 120 140
Temperature (°C)
Transistion Time vs. Temperature
Document Number: 72418
S-80164-Rev. D, 28-Jan-08
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DG2034
Vishay Siliconix
TEST CIRCUITS
V+
Logic
Input
VINH
tr < 5 ns
tf < 5 ns
50 %
VINL
Switch
Input
VIN
Switch
Output
V+
NO or NC
COM
tOFF
VOUT
VOUT
IN
RL
300 Ω
GND
CL
35 pF
VOUT = VIN
0V
Switch
Output
CL (includes fixture and stray capacitance)
Note:
RL
0.9 x VOUT
90 %
tON
Logic input waveform is inverted for switches that
have the opposite logic sense control
RL + rON
Figure 1. Switching Time
V+
Logic
Input
V+
VNO
VNC
tr < 5 ns
tf < 5 ns
VINL
COM
NO
VINH
VO
NC
RL
300 Ω
IN
CL
35 pF
GND
VNC = VNO
VO
Switch
Output
90 %
0V
tD
tD
50 %
tr < 5 ns
tf < 5 ns
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make
+15 V
V+
NO or NC
COM
VS1
VS2
VO
Logic VINH
Input
VINL
NC or NO
RL
300 Ω
IN
tTRANS+
CL
35 pF
tTRANS-
VS1
V01
GND
90 %
Switch
Output
CL (includes fixture and stray capacitance)
VO = VS
VS2
V02
10 %
RL
RL + rON
Figure 3. Transition Time
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Document Number: 72418
S-80164-Rev. D, 28-Jan-08
DG2034
Vishay Siliconix
TEST CIRCUITS
ΔVO
V+
VO
V+
Rg
COM
NO or NC
IN
Vg
IN
VO
OFF
ON
CL
1 nF
OFF
Q = ΔVO x CL
GND
IN dependent on switch configuration Input polarity determined
by sense of switch.
VIN = 0 - V+
Figure 4. Charge Injection
V+
C
V+
VS
VIN
NO or NC
COM
Rg = 50 Ω
50 Ω
IN
0 V or 2.4 V
NC or NO
VOUT
GND
XTALK Isolation = 20 log
VOUT
VIN
C = RF bypass
Figure 5. Crosstalk
V+
V+
C
C
V+
COM
NO or NC
COM
Meter
Rg = 50 Ω
IN
RL
50 Ω
IN
0 V, 2.4 V
0 V, 2.4 V
NO or NC
GND
GND
Off Isolation = 20 log
C = RF Bypass
Figure 6. Off Isolation
VCOM
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
VNO/NC
Figure 7. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72418.
Document Number: 72418
S-80164-Rev. D, 28-Jan-08
www.vishay.com
7
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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