VISHAY SIHFBF20STL

IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Surface Mount (IRFBF20S/SiHFBF20S)
900
RDS(on) (Ω)
VGS = 10 V
• Low-Profile Through-Hole (IRFBF20L/SiHFBF20L)
8.0
Qg (Max.) (nC)
38
• Available
in
Tape
(IRFBF20S/SiHFBF20S)
Qgs (nC)
4.7
• Dynamic dV/dt Rating
Qgd (nC)
21
• 150 °C Operating Temperature
Configuration
Single
and
Available
Reel RoHS*
COMPLIANT
• Fast Switching
• Fully Avalanche Rated
D
• Lead (Pb)-free Available
I2PAK (TO-262)
D2PAK (TO-263)
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capabel of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application. The
through-hole version (IRFBF20L/SiHFBF20L) is available for
low-profile applications.
G
G
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
D2PAK (TO-263)
IRFBF20SPbF
SiHFBF20S-E3
IRFBF20S
SiHFBF20S-E3
D2PAK (TO-263)
IRFBF20STRLPbFa
SiHFBF20STL-E3a
IRFBF20STRLa
SiHFBF20STLa
D2PAK (TO-263)
IRFBF20STRRPbFa
SiHFBF20STR-E3a
IRFBF20STRRa
SiHFBF20STRa
I2PAK (TO-262)
IRFBF20LPbF
SiHFBF20L-E3
IRFBF20L
SiHFBF20L
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltagee
VDS
900
Gate-Source Voltagee
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta,e
ID
IDM
Linear Derating Factor
UNIT
V
1.7
1.1
A
6.8
0.43
W/°C
Single Pulse Avalanche Energyb, e
EAS
180
mJ
Repetitive Avalanche Currenta
IAR
1.7
A
Repetitive Avalanche Energya
EAR
5.4
mJ
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
Peak Diode Recovery dV/dtc, e
PD
dV/dt
54
3.1
1.5
W
V/ns
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91121
S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS
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IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Operating Junction and Storage Temperature Range
LIMIT
TJ, Tstg
- 55 to + 150
for 10 s
300d
6-32 or M3 screw
10
Soldering Recommendations (Peak Temperature)
Mounting Torque
SYMBOL
UNIT
°C
N
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V; starting TJ = 25 °C, L = 117 mH, RG = 25 Ω, IAS = 1.7 A (see fig. 12).
c. ISD ≤ 1.7 A, dI/dt ≤ 70 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBF20/SiHFBF20 data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
-
40
Maximum Junction-to-Case
RthJC
-
2.3
UNIT
°C/W
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 µA
900
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
1.1
-
mV/°C
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
-
-
± 100
VDS = 900 V, VGS = 0 V
-
-
100
VDS = 720 V, VGS = 0 V, TJ = 125 °C
-
-
500
-
-
8.0
Ω
0.6
-
-
S
VGS = 10 V
ID = 1.0 Ab
VDS = 50 V, ID = 1.0
Ab
µA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 1.7 A, VDS = 360 V,
see fig. 6 and 13b
-
490
-
-
55
-
-
18
-
-
-
38
-
-
4.7
Gate-Drain Charge
Qgd
-
-
21
Turn-On Delay Time
td(on)
-
8.0
-
-
21
-
-
56
-
-
32
-
Rise Time
Turn-Off Delay Time
Fall Time
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2
tr
td(off)
tf
VDD = 450 V, ID = 1.7 A,
RG = 18 Ω, VGS = 10 V, see fig. 10b
pF
nC
ns
Document Number: 91121
S-Pending-Rev. A, 23-Jun-08
IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
-
1.7
-
-
6.8
-
-
1.5
-
350
530
ns
-
0.85
1.3
µC
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb
TJ = 25 °C, IF = 1.7 A, dI/dt = 100 A/µsb
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IRFBF20/SiHFBF20 data and test conditions.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Document Number: 91121
S-Pending-Rev. A, 23-Jun-08
Fig. 2 - Typical Output Characteristics
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IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91121
S-Pending-Rev. A, 23-Jun-08
IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
RD
VDS
VGS
D.U.T.
RG
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91121
S-Pending-Rev. A, 23-Jun-08
tr
td(off) tf
Fig. 10b - Switching Time Waveforms
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IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L
Vishay Siliconix
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T.
RG
+
-
IAS
V DD
VDS
10 V
tp
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
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Document Number: 91121
S-Pending-Rev. A, 23-Jun-08
IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
0.2 µF
12 V
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Fig. 13a - Basic Gate Charge Waveform
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91121.
Document Number: 91121
S-Pending-Rev. A, 23-Jun-08
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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