VISHAY 1N6479

1N6478 thru 1N6484
Vishay General Semiconductor
Surface Mount Glass Passivated Junction Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Ideal for automated placement
SUPERECTIFIER®
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
DO-213AB
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
30 A
IR
10 μA
MECHANICAL DATA
VF
1.1 V
TJ max.
175 °C
Case: DO-213AB, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive peak
reverse voltage rating
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
STANDARD RECOVERY DEVICE:
1ST BAND IS WHITE
SYMBOL 1N6478 1N6479 1N6480 1N6481 1N6482 1N6483 1N6484
Polarity color bands (2nd band)
Gray
Red
Orange
Yellow
Green
Blue
Violet
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
V
Maximum average forward rectified current
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
30
A
Maximum full load reverse current, full cycle
average at TA = 75 °C
IR(AV)
100
μA
Operating junction and storage temperature
range
TJ, TSTG
- 65 to + 175
°C
Document Number: 88527
Revision: 15-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N6478 thru 1N6484
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum
instantaneous
forward voltage
1.0 A
SYMBOL 1N6478
1N6479
1N6480
TA = 25 °C
Typical junction
capacitance
1N6482
1N6483
1N6484
UNIT
1.1
VF
V
TA = 75 °C
Maximum DC reverse
current at rated DC
blocking voltage
1N6481
1.0
TA = 25 °C
10
IR
μA
TA = 125 °C
200
4.0 V, 1 MHz
CJ
8.0
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL 1N6478
Maximum thermal resistance
1N6479
1N6480
1N6481
RJA
(1)
50
RJT
(2)
20
1N6482
1N6483
1N6484
UNIT
°C/W
Notes
(1) Thermal resistance from junction to ambient, 0.24" x 0.24" (6.0 mm x 6.0 mm) copper pads to each terminal
(2) Thermal resistance from junction to terminal, 0.24" x 0.24" (6.0 mm x 6.0 mm) copper pads to each terminal
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.114
96
1500
7" diameter plastic tape and reel
1N6482-E3/96
1N6482-E3/97
0.114
97
5000
13" diameter plastic tape and reel
1N6482HE3/96
(1)
0.114
96
1500
7" diameter plastic tape and reel
1N6482HE3/97
(1)
0.114
97
5000
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
(1)
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
30
60 Hz
Resistive or
Inductive Load
0.8
Peak Forward Surge Current (A)
Average Forward Current (A)
1.0
0.6
0.4
0.2
TA = 75 °C
8.3 ms Single Half Sine-Wave
25
20
15
10
5.0
0
0
0
25
50
75
100
125
150
175
1
10
100
Terminal Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
Document Number: 88527
[email protected], [email protected], [email protected]
Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N6478 thru 1N6484
Vishay General Semiconductor
100
Junction Capacitance (pF)
Instantaneous Forward Current (A)
10
Pulse Width = 300 µs
1 % Duty Cycle
1
TJ = 25 °C
0.1
0.01
0.4
10
1
0.6
0.8
1.0
1.2
1.4
1.6
100
10
1
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
Transient Thermal Impedance (°C/W)
10
Instantaneous Reverse Current (mA)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
10
1
Mounted on 0.20" x 0.27" (5 mm x 7 mm)
Copper Pad Areas
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-213AB
Solderable Ends
D2 =
1st Band
Mounting Pad Layout
0
D1 +- 0.008
(0.20)
0.138 (3.5) MAX.
D2
0.022 (0.56)
0.018 (0.46)
D1 =
0.105 (2.67)
0.095 (2.41)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185 (4.7)
0.118 (3.0) MIN.
0.049 (1.25) MIN.
0.238 (6.0) REF.
1st band denotes type and positive end (cathode)
Document Number: 88527
Revision: 15-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], DiodesEur[email protected]
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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