ONSEMI BAS16TT1G

BAS16TT1G
Silicon Switching Diode
Features
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
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MAXIMUM RATINGS (TA = 25C)
Symbol
Max
Unit
Continuous Reverse Voltage
VR
75
V
Recurrent Peak Forward Current
IF
200
mA
IFM(surge)
500
mA
Rating
Peak Forward Surge Current
Pulse Width = 10 ms
3
CATHODE
1
ANODE
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR--4 Board (Note 1)
TA = 25C
Derated above 25C
Thermal Resistance,
Junction--to--Ambient (Note 1)
Total Device Dissipation,
FR--4 Board (Note 2)
TA = 25C
Derated above 25C
Thermal Resistance,
Junction--to--Ambient (Note 2)
Junction and Storage
Temperature Range
Symbol
PD
RθJA
PD
Max
Unit
225
mW
1.8
mW/C
555
C/W
October, 2010 -- Rev. 3
1
2
360
mW
2.9
mW/C
RθJA
345
C/W
TJ, Tstg
--55 to
+150
C
XX
M
A6 MG
G
= Specific Device Code
= Date Code
= Pb--Free Package
ORDERING INFORMATION
Device
BAS16TT1G
1
CASE 463
SOT--416
STYLE 2
1
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--4 @ Minimum Pad
2. FR--4 @ 1.0  1.0 Inch Pad
 Semiconductor Components Industries, LLC, 2010
3
Package
Shipping†
SOT--416
(Pb--Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAS16TT1/D
BAS16TT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol
Characteristic
Min
Max
-----
715
866
1000
1250
----
1.0
50
30
Unit
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150C)
(VR = 25 V, TJ = 150C)
IR
Capacitance
(VR = 0, f = 1.0 MHz)
CD
--
2.0
pF
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 Ω) (Figure 1)
trr
--
6.0
ns
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2)
QS
--
45
PC
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
VFR
--
1.75
V
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2
mV
mA
BAS16TT1G
1 ns MAX
10%
DUT
500 Ω
t
trr
tif
50 Ω
DUTY CYCLE = 2%
90%
VF
Irr
100 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OSCILLOSCOPE
R  10 MΩ
C  7 pF
VC
500 Ω
DUT
VCM
20 ns MAX
D1
t
10%
VCM =
Qa
C
243 pF
100 KΩ
DUTY CYCLE = 2%
t
90%
Vf
BAW62
400 ns
Figure 2. Stored Charge Equivalent Test Circuit
V
120 ns
1 KΩ
V
450 Ω
90%
DUT
Vfr
t
10%
DUTY CYCLE = 2%
2 ns MAX
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
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3
50 Ω
BAS16TT1G
10
IR , REVERSE CURRENT (A)
IF, FORWARD CURRENT (mA)
100
10
TA = 85C
TA = 25C
1.0
TA = -- 40C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
0.001
1.2
TA = 150C
TA = 25C
10
0
Figure 4. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
50
Figure 5. Leakage Current
CD , DIODE CAPACITANCE (pF)
0.68
0.64
0.60
0.56
0.52
2
0
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 6. Capacitance
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 7. Normalized Thermal Response
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4
10
100
1000
BAS16TT1G
PACKAGE DIMENSIONS
SC--75/SOT--416
CASE 463--01
ISSUE F
--E--
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
3
b 3 PL
0.20 (0.008)
e
--D--
DIM
A
A1
b
C
D
E
e
L
HE
1
M
D
0.20 (0.008) E
HE
C
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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5
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BAS16TT1/D