ONSEMI BAW56WT1G

BAW56WT1
Preferred Device
Dual Switching Diode,
Common Anode
Features
• Pb−Free Package is Available
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CATHODE
1
ANODE
3
2
CATHODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Reverse Voltage
VR
70
V
Forward Current
IF
200
mA
IFM(surge)
500
mA
Peak Forward Surge Current
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING
DIAGRAM
3
1
SC−70
CASE 419
STYLE 4
2
A1 M G
G
1
THERMAL CHARACTERISTICS (TA = 25°C)
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
200
mW
1.6
mW/°C
RJA
625
°C/W
PD
300
mW
2.4
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
A1 = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
BAW56WT1
BAW56WT1G
Package
Shipping †
SC−70
3000/Tape & Reel
SC−70
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 5
1
Publication Order Number:
BAW56WT1/D
BAW56WT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)
70
−
V
−
−
−
30
2.5
50
−
2.0
−
−
−
−
715
855
1000
1250
−
6.0
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 A)
Reverse Voltage Leakage Current
(VR = 25 V, TJ = 150°C)
(VR = 70 V)
(VR = 70 V, TJ = 150°C)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 60 mA)
(IF = 150 mA)
VF
Reverse Recovery Time
(IF = IR = 10 mA, RL = 100 , IR(REC) = 1.0 mA) (Figure 1)
trr
A
pF
mV
ns
820 +10 V
2.0 k
100 H
tr
0.1 F
IF
tp
t
IF
trr
10%
t
0.1 F
90%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
VR
IR
INPUT SIGNAL
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAW56WT1
10
IR , REVERSE CURRENT (μA)
10
TA = 85°C
TA = 25°C
1.0
TA = 150°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = −40°C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
0.001
1.2
TA = 25°C
0
10
Figure 2. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
1.75
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
1.5
1.25
1.0
0.75
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8
50
BAW56WT1
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE M
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
E
HE
1
2
b
e
0.05 (0.002)
c
A2
A
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
L
A1
MIN
0.80
0.00
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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PUBLICATION ORDERING INFORMATION
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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4
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
BAW56WT1/D