6331& 63$1& &RRO026 3RZHU7UDQVLVWRU VDS#Tjmax 9 5'6RQ Ω ,' $ )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH 3G721 • 3HULRGLFDYDODQFKHUDWHG 3G72 •([WUHPHGYGWUDWHG • 8OWUDORZHIIHFWLYHFDSDFLWDQFHV 1 • ,PSURYHGWUDQVFRQGXFWDQFH 2 3 P-TO220-3-31 •3G72)XOO\LVRODWHGSDFNDJH9$&PLQXWH 7\SH 3DFNDJH 2UGHULQJ&RGH 0DUNLQJ 6331& 3G72 46 1& 63$1& 1& 3G72 SP000216298 0D[LPXP5DWLQJV 3DUDPHWHU 6\PERO 9DOXH 63 ,' &RQWLQXRXVGUDLQFXUUHQW 8QLW 63$ $ TC & TC & 3XOVHGGUDLQFXUUHQWtpOLPLWHGE\Tjmax ,'SXOV $ $YDODQFKHHQHUJ\VLQJOHSXOVH ($6 P- EAR $YDODQFKHFXUUHQWUHSHWLWLYHW$5OLPLWHGE\Tjmax ,$5 $ Gate source voltage VGS 9 *DWHVRXUFHYROWDJH$&I!+] VGS ± ± Power dissipation, TC = 25°C Ptot 2SHUDWLQJDQGVWRUDJHWHPSHUDWXUH 7M7VWJ ,' $VDD 9 $YDODQFKHHQHUJ\UHSHWLWLYHW$5OLPLWHGE\Tjmax ,' $VDD 9 Reverse diode dv/dt Rev. 2.9 7) dv/dt PDJH : & V/ns 2010-12-21 6331&3 63$1& 0D[LPXP5DWLQJV 3DUDPHWHU 6\PERO 'UDLQ6RXUFHYROWDJHVORSH GYGW 9DOXH 8QLW 9QV 9DOXHV 8QLW V DS 9, ' $Tj & 7KHUPDO&KDUDFWHULVWLFV 6\PERO 3DUDPHWHU PLQ W\S PD[ 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH RthJC 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH)XOO3$. 5WK-&B)3 7KHUPDOUHVLVWDQFHMXQFWLRQDPELHQWOHDGHG RthJA 7KHUPDOUHVLVWDQFHMXQFWLRQDPELHQW)XOO3$. 5WK-$B)3 60'YHUVLRQGHYLFHRQ3&% 5WK-$ #PLQIRRWSULQW #FP FRROLQJDUHD 6ROGHULQJWHPSHUDWXUH wavesoldering 7VROG .: & PPLQIURPFDVHIRUV (OHFWULFDO&KDUDFWHULVWLFVDW7 M &XQOHVVRWKHUZLVHVSHFLILHG 3DUDPHWHU 6\PERO &RQGLWLRQV 'UDLQVRXUFHEUHDNGRZQYROWDJH V(BR)DSS V GS 9,' P$ 'UDLQ6RXUFHDYDODQFKH 9%5'6 V GS 9,' $ 9DOXHV 8QLW PLQ W\S PD[ 9 EUHDNGRZQYROWDJH *DWHWKUHVKROGYROWDJH 9*6WK ,' µ$9*6 9'6 =HURJDWHYROWDJHGUDLQFXUUHQW , '66 V DS 9VGS 9 Tj & Tj & V GS 9VDS 9 Q$ V GS 9,' $ Ω Tj & Tj & I 0+]RSHQGUDLQ *DWHVRXUFHOHDNDJHFXUUHQW , *66 'UDLQVRXUFHRQVWDWHUHVLVWDQFH 5'6RQ *DWHLQSXWUHVLVWDQFH Rev. 2.9 RG PDJH $ 2010-12-21 6331&3 63$1& (OHFWULFDO&KDUDFWHULVWLFV 3DUDPHWHU Transconductance 6\PERO g fs &RQGLWLRQV V DS≥, '5'6RQPD[ 9DOXHV 8QLW PLQ W\S PD[ 6 S) ,' $ Input capacitance Ciss V GS 9V DS 9 Output capacitance Coss f 0+] Reverse transfer capacitance Crss (IIHFWLYHRXWSXWFDSDFLWDQFH &RHU V GS 9 HQHUJ\UHODWHG V DS 9WR9 (IIHFWLYHRXWSXWFDSDFLWDQFH &RWU WLPHUHODWHG Turn-on delay time td(on) V DD 9V GS 9 Rise time tr ,' $ Turn-off delay time td(off) RG Ω Fall time tf QV *DWH&KDUJH&KDUDFWHULVWLFV Gate to source charge Qgs Gate to drain charge Qgd *DWHFKDUJHWRWDO 4J V DD 9,' $ V DD 9,' $ Q& V GS WR9 *DWHSODWHDXYROWDJH 9SODWHDX V DD 9,' $ 9 /LPLWHGRQO\E\PD[LPXPWHPSHUDWXUH 5HSHWLWYHDYDODQFKHFDXVHVDGGLWLRQDOSRZHUORVVHVWKDWFDQEHFDOFXODWHGDV3$9 EARf 'HYLFHRQPPPPPPHSR[\3&%)5ZLWKFPðRQHOD\HUPWKLFNFRSSHUDUHDIRUGUDLQ FRQQHFWLRQ3&%LVYHUWLFDOZLWKRXWEORZQDLU 6ROGHULQJWHPSHUDWXUHIRU72&UHIORZ & RHULVDIL[HGFDSDFLWDQFHWKDWJLYHVWKHVDPHVWRUHGHQHUJ\DVCoss ZKLOHVDS LVULVLQJIURPWR9 '66 & LVDIL[HGFDSDFLWDQFHWKDWJLYHVWKHVDPHFKDUJLQJWLPHDVCoss ZKLOHVDSLVULVLQJIURPWR9 RWU '66 7I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 2.9 PDJH 2010-12-21 6331& 63$1& (OHFWULFDO&KDUDFWHULVWLFV 3DUDPHWHU 6\PERO ,QYHUVHGLRGHFRQWLQXRXV ,6 &RQGLWLRQV 9DOXHV 8QLW PLQ W\S PD[ TC & $ IRUZDUGFXUUHQW Inverse diode direct current, I SM pulsed ,QYHUVHGLRGHIRUZDUGYROWDJH 96' VGS 9, ) ,6 9 Reverse recovery time t rr VR 9,) ,6 QV Reverse recovery charge Q rr diF/dt $V & Peak reverse recovery current I rrm $ 3HDNUDWHRIIDOORIUHYHUVH GL UUGW $V Tj & UHFRYHU\FXUUHQW 7\SLFDO7UDQVLHQW7KHUPDO&KDUDFWHULVWLFV 9DOXH 6\PERO 8QLW 633B% 63$ 5WK 5WK 5WK 6\PERO 9DOXH 633B% 63$ &WK :V. &WK &WK 5WK &WK 5WK &WK 5WK &WK 7M .: 8QLW 5 WK 5 WKQ 7 FDVH ( [WHUQDO+ HDWVLQN 3 WRW W & WK & WK & WKQ 7 DP E Rev. 2.9 PDJH 2010-12-21 6331&3 63$1& 3RZHUGLVVLSDWLRQ 3RZHUGLVVLSDWLRQ)XOO3$. 3WRW ITC Ptot ITC 6331& : : Ptot Ptot & TC 6DIHRSHUDWLQJDUHD 6DIHRSHUDWLQJDUHD)XOO3$. ,' I9 '6 SDUDPHWHU' TC & ,' IVDS SDUDPHWHU' TC & $ $ ,' ,' & TC Rev. 2.9 WS PV WS PV WS PV WS PV '& 9 VDS PDJH WS PV WS PV WS PV WS PV WS PV '& 9 VDS 2010-12-21 6331&3 63$1& 7UDQVLHQWWKHUPDOLPSHGDQFH 7UDQVLHQWWKHUPDOLPSHGDQFH)XOO3$. =WK-& IW S SDUDPHWHU' WS7 =WK-& It p SDUDPHWHU' tpW .: .: =WK-& =WK-& ' ' ' ' ' ' VLQJOHSXOVH V tp ' ' ' ' ' ' VLQJOHSXOVH 7\SRXWSXWFKDUDFWHULVWLF 7\SRXWSXWFKDUDFWHULVWLF ,' IVDSTj & SDUDPHWHUWS VVGS ,' IVDSTj & SDUDPHWHUWS VVGS $ 9 9 9 9 $ 9 9 9 9 9 ,' ,' V t p 9 9 9 9 9 9 9 9 9 9 VDS Rev. 2.9 9 VDS PDJH 2010-12-21 6331&3 63$1& 7\SGUDLQVRXUFHRQUHVLVWDQFH 'UDLQVRXUFHRQVWDWHUHVLVWDQFH 5'6RQ f,' SDUDPHWHUTj &VGS 5'6RQ I7M SDUDPHWHU,' $VGS 9 Ω 9 9 9 9 9 9 5'6RQ 9 9 5'6RQ Ω 6331& 9 W\S $ & ,' Tj 7\SWUDQVIHUFKDUDFWHULVWLFV 7\SJDWHFKDUJH ,' I9*69'6≥[,'[5'6RQPD[ SDUDPHWHUWS V VGS I4 *DWH SDUDPHWHU,' $SXOVHG $ 9 6331& & VGS ,' & 9 9'6PD[ Q& 4 *DWH VGS Rev. 2.9 9'6PD[ PDJH 2010-12-21 6331&3 63$1& )RUZDUGFKDUDFWHULVWLFVRIERG\GLRGH $YDODQFKH62$ ,) I96' SDUDPHWHU7MWS V ,$5 IW$5 SDUTj≤& 6331& $ $ 7 M67$57 & IF ,$5 7 M67$57 & 7M &W\S 7M &W\S 7M & 7M & 9 V W $5 96' $YDODQFKHHQHUJ\ 'UDLQVRXUFHEUHDNGRZQYROWDJH ($6 ITj SDU,' $V DD 9 V(BR)DSS ITj 6331& 9 V(BR)DSS P- ($6 & Tj Rev. 2.9 & Tj PDJH 2010-12-21 6331& 63$1& $YDODQFKHSRZHUORVVHV 7\SFDSDFLWDQFHV 3$5 If & IVDS SDUDPHWHUV GS 9I 0+] SDUDPHWHUE AR P- S) : &LVV & 3$5 &RVV &UVV +] 9 VDS f 7\SCossVWRUHGHQHUJ\ (RVV fVDS - (RVV 9 VDS Rev. 2.9 PDJH 2010-12-21 6331&3 63$1& 'HILQLWLRQRIGLRGHVVZLWFKLQJFKDUDFWHULVWLFV Rev. 2.9 PDJH 2010-12-21 SPP04N50C3 SPA04N50C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.9 Page 11 2010-12-21 SPP04N50C3 SPA04N50C3 PG-TO220-3-31 (FullPAK) Rev. 2.9 Page 12 2010-12-21 SPP04N50C3 SPA04N50C3 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.9 PDJH 13 2010-12-21