LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002EM3T5G S-L2N7002EM3T5G N–Channel SOT–723 3 • Pb−Free Package is Available. • ESD Protected:2000V • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 1 ORDERING INFORMATION SOT-723 Device Marking Shipping L2N7002EM3T5G S-L2N7002EM3T5G RK 8000 Tape & Reel N - Channel 3 MAXIMUM RATINGS d Rating Drain–Source Voltage Drain Current – Continuous TC = 25°C (Note 1.) – – Continuous Pulse t < 10us Symbol Value Unit VDSS 60 Vdc 1 ID ±115 IDM ±800 g mAdc s 2 VGS ±20 Vdc Symbol Max Unit PD 150 1.2 mW mW/°C RθJA 833 °C/W TJ, Tstg –55 to +150 MARKING DIAGRAM & PIN ASSIGNMENT Drain THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature °C 3 RK 1 Gate RK M M Gate–Source Voltage – Continuous 2 Source = Device Code = Month Code 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. FR–5 = 1.0 x 0.75 x 0.062 in. 3. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. Rev .O 1/4 LESHAN RADIO COMPANY, LTD. L2N7002EM3T5G , S-L2N7002EM3T5G z(OHFWULFDOFKDUDFWHULVWLFV7D °& Parameter Gate-source leakage current Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Symbol Min. Typ. Max. Unit Test Conditions IGSS − − ±10 µA VGS=±20V, VDS=0V V (BR) DSS 60 − − V ID=10µA, VGS=0V IDSS − − 1 µA VDS=60V, VGS=0V VGS (th) 1 1.85 2.5 V VDS=VGS , ID=250uA − − 7.5 Drain-source on-state resistance RDS (on)∗ Ω ID=0.5A, VGS=10V − − 7.5 l Yfs l∗ 80 − − mS VDS=10V, ID=0.2A Input capacitance Ciss − 25 50 pF Output capacitance Coss − 10 25 pF Reverse transfer capacitance VDS=25V VGS=0V f=1MHz Forward transfer admittance Crss − 3.0 5.0 pF Turn-on delay time td (on)∗ − 12 20 ns Turn-off delay time td (off)∗ − 20 30 ns ID=0.05A, VGS=5V ID=200mA, VDD 30V VGS=10V, RL=150Ω ,RGS=10Ω ∗ PW≤300µs, Duty cycle≤1% z(OHFWULFDOFKDUDFWHULVWLF curveV ≤ Rev .O 2/4 LESHAN RADIO COMPANY, LTD. L2N7002EM3T5G , S-L2N7002EM3T5G z(OHFWULFDOFKDUDFWHULVWLF curveV (continues) zSwitching FKDUDFWHULVWLFs measurement circuit Rev .O 3/4 LESHAN RADIO COMPANY, LTD. L2N7002EM3T5G , S-L2N7002EM3T5G SOT−723 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L C MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 mm Ǔ ǒinches Rev .O 4/4