1-1-4 Linear Regulator ICs SI-3000KD Series Surface-Mount, Low Current Consumption, Low Dropout Voltage ■Features ■Absolute Maximum Ratings • Compact surface-mount package (TO263-5) Parameter • Output current: 1.0A (Ta=25°C) Ratings Symbol SI-3012KD/3033KD SI-3010KD/3050KD 35*1 17 Unit DC Input Voltage VIN • Low dropout voltage: VDIF ≤ 0.6V (at IO = 1.0A) DC Output Current IO 1.0 A • Low circuit current consumption: Iq ≤ 350 µA (600 µA for SI-3010KD, SI-3050KD) Power Dissipation PD*2 3 W Junction Temperature Tj –30 to +125 °C Storage Temperature Tstg –30 to +125 °C Thermal Resistance (Junction to Ambient Air) θ j-a 33.3 °C/W Thermal Resistance (Junction to Case) θ j-c 3 °C/W • Low circuit current at output OFF: Iq (OFF) ≤ 1 µA • Built-in overcurrent, thermal protection circuits • Compatible with low ESR capacitors (SI-3012KD and SI-3033KD) V *1: A built-in input-overvoltage-protection circuit shuts down the output voltage at the Input Overvoltage Shutdown Voltage of the electrical characteristics. *2: When mounted on glass-epoxy board of 1600mm2 (copper laminate area 100%). ■Applications • Secondary stabilized power supply (local power supply) ■Electrical Characteristics 1 (Low Input Voltage type compatible with low ESR output capacitor) (Ta=25°C, VC=2V, unless otherwise specified) Ratings Parameter Symbol SI-3012KD (Variable type) min. Input Voltage Output Voltage (Reference Voltage for SI-3012KD) VIN 2.4*3 VO (VADJ) 1.24 Conditions max. *4 *3 1.28 1.32 3.234 *4 VIN=5 to 10V, IO=10mA 50 VIN=5V, IO=0 to 1A 0.4 Conditions IO=0.5A 0.6 Quiescent Circuit Current Temperature Coefficient of Output Voltage RREJ Overcurrent Protection Starting Current*1 IS1 1 VIN=3.3V, VC=0V Conditions Conditions VIN=5V, IO=0A,VC=2V 1 Conditions ∆VO/∆Ta Ripple Rejection 350 VIN=3.3V, IO=0A, VC=2V, R2=2.4kΩ Iq (OFF) VIN=5V, VC=0V ±0.3 ±0.3 Tj=0 to 100°C (VO=2.5V) Tj=0 to 100°C 55 55 VIN=3.3V, f=100 to 120HZ, IO=0.1A (VO=2.5V) 1.1 Conditions 1.1 VIN=3.3V VC, IL 0.8 0.8 IC, IH 40 40 Control Current (Output OFF) IC, IL Conditions 2 2 VC=2V –5 0 VC=0V V VC=2V –5 0 VC=0V µA µA A VIN=5V VC, IH Conditions mV dB VIN=5V, f=100 to 120HZ, IO=0.1A Control Voltage (Output OFF) Control Current (Output ON) mV mV/°C ON)*2 Control Voltage (Output V IO=1A 350 Conditions Circuit Current at Output OFF 0.6 IO=1A (VO=2.5V) Iq V 0.4 IO=0.5A (VO=2.5V) Conditions Terminal 3.366 15 VIN=3.3V, IO=0 to 1A (VO=2.5V) VDIF VC 3.300 40 Conditions Dropout Voltage max. VIN=5V, IO=10mA VIN=3.3 to 8V, IO=10mA (VO=2.5V) ∆VOLOAD Unit typ. 15 Conditions Load Regulation min. VIN=3.3V, IO=10mA ∆VOLINE Line Regulation SI-3033KD typ. V µA µA *1: IS1 is specified at the 5% drop point of output voltage VO under the condition of Output Voltage parameter. *2: Output is OFF when the output control terminal (VC terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs. *3: Refer to the Dropout Voltage parameter. *4: VIN (max) and IO (max) are restricted by the relation PD = (VIN - VO) × IO. Please calculate these values referring to the Copper laminate area vs. Power dissipation data. 72 ICs SI-3000KD Series ■Electrical Characteristics 2 (High Input Voltage Type) Ratings Parameter Symbol SI-3010KD (Variable type) min. VIN 2.4*1 VO (VADJ) 0.98 Input Voltage Output Voltage (Reference Voltage VADJ for SI-3010KD) Conditions SI-3050KD typ. max. 27*5 *1 1.00 1.02 4.90 VIN=7V, IO=10mA IO=1A 600 1 Conditions Conditions IS1 Overcurrent Protection Starting Current*2 ±0.5 ±0.5 Tj=0 to 100°C 75 75 VIN=7V, f=100 to 120Hz, IO=0.1A (VO=5V) VIN=7V, f=100 to 120Hz, IO=0.1A 1.1 ON)*3 VC, IH Control Voltage (Output OFF)*3 VC, IL Control Voltage (Output VIN=7V 2.0 –5 µA VC=2V 0 –5 VC=0V VOVP V 40 VC=2V Conditions Input Overvoltage Shutdown Voltage A 0.8 40 Conditions Control Current (Output OFF) dB 2.0 0.8 IC, IL mV/ °C VIN=7V IC, IH Control Current (Output ON) µA 1.1 Conditions *4 1 VIN=7V, VC=0V Tj=0 to 100°C (VO=5V) RREJ µA VIN=7V, IO=0A, VC=2V VIN=7V, VC=0V ∆VO/∆Ta Ripple Rejection 600 VIN=7V, IO=0A, VC=2V R2=10kΩ Iq (OFF) Temperature Coefficient of Output Voltage V 0.6 IO=1A (VO=5V) Conditions mV IO=0.5A Iq Circuit Current at Output OFF mV 0.3 IO=0.5A (VO=5V) Conditions V VIN=7V, IO=0 to 1A 0.6 Quiescent Circuit Current V 75 0.3 Conditions Conditions Terminal 15*5 75 VDIF VC 5.10 30 VIN=7V, IO=0 to 1A (VO=5V) Conditions Dropout Voltage 5.00 VIN=6 to 11V, IO=10mA ∆VOLOAD Load Regulation max. 30 VIN=6 to 11V, IO=10mA (VO=5V) Conditions Unit typ. VIN=7V, IO=10mA ∆VOLINE Line Regulation min. 0 µA VC=0V 33 26 Conditions IO=10mA V IO=10mA *1: *2: *3: *4: Refer to the Dropout Voltage parameter. Is1 is specified at the 5% drop point of output voltage VO under the condition of Output Voltage parameter. Output is OFF when the output control terminal (VC terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs. SI-3010KD, SI-3050KD, cannot be used in the following applications because the built-in foldback-type overcurrent protection may cause errors during start-up stage. (1) Constant current load (2) Positive and negative power supply (3) Series-connected power supply (4) VO adjustment by raising ground voltage *5: VIN (max) and IO (max) are restricted by the relation PD = (VIN - VO) ✕ IO. Please calculate these values referring to the Copper laminate area vs. Power dissipation data as shown hereinafter. ■External Dimensions (TO263-5) (unit : mm) ±0.2 10.0 (8.0) ±0.2 1.2 (6.8) ±0.15 ±0.1 (3°) ±0.2 2.54 (R0.3) 0 to 6° (0.5) ±0.1 ±0.1 ±0.25 (1.7 0.8 ±0.25 (1.7 ) ) 1 2 3 4 5 Pin Assignment q VC w VIN e GND (Common to the rear side of product) r VO t Sense (ADJ for SI-3010KD/3012KD) 4.9 ±0.3 ±0.2 2.4 (R0.3) 2.0 (0.75) 0.10 (3°) 15.30 15.3 ±0.3 ±0.3 9.2± ±0.2 4.9 ±0.10 0.88 ±0.2 (4.6) (2×R0.45) (3°) ±0.2 φ1.5 Dp: +0.10 1.3 –0.05 3-R0.3 ±0.2 (4.4) ±0.2 4.5 9.2 (15°) (1.75) (0.40) Case temperature measurement point (1.7 ±0.25 ) 0.8 ±0.25 (1.7 ) Plastic Mold Package Type Flammability: UL94V-0 Product Mass: Approx. 1.48g ±0.2 9.9 (3°) (3°) 2-R0.3 ±0.02 10.0 ICs 73 1-1-4 Linear Regulator ICs ■Block Diagram ●SI-3010KD/SI-3012KD ●SI-3033KD/SI-3050KD VIN 2 4 VO VIN 2 VC 1 5 ADJ VC 1 4 Vo 5 Sense TSD - TSD - + + REF REF 3 GND 3 GND ■Typical Connection Diagram ●SI-3033KD/SI-3050KD ●SI-3010KD/SI-3012KD D1*2 D1*2 *1 *1 *3 R3 VIN 2 VO 4 VIN 2 + + sense VC GND 5 1 3 CIN R1 + + Load CO VO 4 CIN VC GND ADJ 1 5 3 CO Load R2 CIN: Input capacitor (22 µF or larger) CO: Output capacitor *1: SI-3012KD/3033KD (22 µF or larger) Co has to be a low ESR capacitor such as a ceramic capacitor. When using the electrolytic capacitor, oscillation may occur at a low temperature. SI-3010KD/3050KD/ (47 µF or larger) If a low ESR capacitor is used, oscillation may occur. *2: D1: Reverse bias protection diode This diode is required for protection against reverse biasing between the input and output. (Sanken SJPL-H2 is recommended.) This diode is not required at VO ≤ 3.3V. R1, R2: Output voltage setting resistors The output voltage can be set by connecting R1 and R2 as shown above. The recommended value for R2 is 10Ω (24kΩ for SI-3012KD). R1=(VO–VADJ)÷(VADJ/R2) *3: For SI-3010KD, insert R3 in case of setting VO to VO ≤ 1.5V. The recommended value for R3 is 10kΩ. ■Reference Data Copper Laminate Area (on Glass-Epoxy Board) vs. Thermal Resistance (from Junction to Ambient Temperature) (Typical Value) Junction to Ambient Temperature Thermal Resistance θ j-a (°C/W) 55 When Using Glass-Epoxy Board of 40 × 40 mm 45 40 35 30 0 Tj=PD × θ j–C + TC ( θ j–C = 3°C/W) PD= (VIN–VO)•IOUT 200 400 600 800 1000 1200 Copper Laminate Area (mm2) 74 • A higher heat radiation effect can be achieved by enlarging the copper laminate area connected to the inner frame to which a monolithic ICs is mounted. • Obtaining the junction temperature Measure the case temperature TC with a thermocouple, etc. Then, substitute this value in the following formula to obtain the junction temperature. 50 ICs 1400 1600 1800