CMPT930 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT930 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: C1X SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=45V ICEO VCE=5.0V ICES VCE=45V IEBO VEB=5.0V BVCBO IC=10μA 45 BVCEO IC=10mA 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=0.5mA VBE(SAT) IC=10mA, IB=0.5mA 0.6 hFE VCE=5.0V, IC=10μA 100 hFE VCE=5.0V, IC=500μA 150 hFE VCE=5.0V, IC=10mA fT VCE=5.0V, IC=500mA, f=30MHz 30 Cob VCB=5.0V, IE=0, f=1.0MHz NF VCE=5.0V, IC=10mA, RS=10kΩ, f=10Hz to 15.7kHz 45 45 5.0 30 350 -65 to +150 357 MAX 10 10 10 10 1.0 1.0 300 UNITS V V V mA mW °C °C/W UNITS nA nA nA nA V V V V V 600 8.0 MHz pF 3.0 dB R5 (27-January 2010) CMPT930 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C1X R5 (27-January 2010) w w w. c e n t r a l s e m i . c o m