CENTRAL CMPT6427_10

CMPT6427
SURFACE MOUNT
NPN SILICON
DARLINGTON TRANSISTOR
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT6427 type
is a NPN silicon darlington transistor manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for applications requiring
extremely high gain.
MARKING CODE: C1V
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless
SYMBOL
TEST CONDITIONS
ICBO
VCB=30V
ICEO
VCE=25V
IEBO
VBE=10V
BVCBO
IC=100μA
BVCEO
IC=10mA
BVEBO
IE=10μA
VCE(SAT)
IC=50mA, IB=0.5mA
VCE(SAT)
IC=500mA, IB=0.5mA
VBE(SAT)
IC=500mA, IB=0.5mA
VBE(ON)
VCE=5.0V, IC=50mA
hFE
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
hFE
hFE
VCE=5.0V, IC=500mA
fT
VCE=5.0V, IC=10mA, f=100MHz
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VBE=0.5V, IC=0, f=1.0MHz
NF
VCE=5.0V, IC=1.0mA, RS=100kΩ,
f=1.0kHz to 15.7kHz
otherwise noted)
MIN
40
40
12
500
350
-65 to +150
357
MAX
50
1.0
50
40
40
12
10K
20K
14K
130
1.20
1.50
2.00
1.75
100K
200K
140K
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
7.0
15
MHz
pF
pF
10
dB
R6 (1-February 2010)
CMPT6427
SURFACE MOUNT
NPN SILICON
DARLINGTON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C1V
R6 (1-February 2010)
w w w. c e n t r a l s e m i . c o m