RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR QTLP610CPD PACKAGE DIMENSIONS 0.126 (3.2) 0.110 (2.8) 0.043 (1.1) 0.035 (0.9) FRONT 0.020 (0.50) 0.087 (2.2) 0.071 (1.8) 0.087 (2.2) 0.071 (1.8) 0.039 (1.0) TOP 0.035 (0.9) R0.017 (0.4) 2 1 COLLECTOR MARK BACK SCHEMATIC 0.016 (0.4) NOTE: 1. Emitter 2. Collector 3. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. 4. Dimensions for all drawings are in inches (mm). 2 COLLECTOR 1 EMITTER DESCRIPTION QTLP610CPD is a phototransistor in miniature SMD package molded in a water clear plastic with right angle lens. FEATURES • • • • • • • • NPN Silicon Phototransistor Right Angle Surface Mount Package Matched Emitters: QTLP610CIR Available in 0.315” (8mm) width tape on 7” (178mm) diameter reel; 2,000 units per reel High Photo Sensitivity Low Junction Capacitance Fast Response Time Water Clear Lens © 2005 Fairchild Semiconductor Corporation Page 1 of 6 4/11/05 RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR QTLP610CPD ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Operating Temperature TOPR -25 to +85 °C Storage Temperature TSTG -40 to +90 °C Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C (Flow)(2,3) TSOL-F 260 for 10 sec °C Collector Emitter Voltage VCE 30 V Emitter Collector Voltage VEC 5 V Power Dissipation(1) PD 75 mW Soldering Temperature Notes: 1. At 25°C or below. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Pulse conditions: tp = 100µs, T = 10 ms. ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) PARAMETER TEST CONDITIONS (λP = 940nm) SYMBOL MIN. TYP. MAX. UNITS λPS — 860 — nm Θ — ±80 — Deg. ID — — 100 nA Collector-Emitter Breakdown IC = 100µA, Ee = 0 BVCEO 30 — — V Emitter-Collector Breakdown IE = 100µA, Ee = 0 Peak Sensitivity Wavelength Reception Angle Dark Current VCE = 20 V, Ee = 0 BVECO 5 — — V On-State Collector Current Ee = 1 mW/cm2 VCE = 5V IC(ON) 0.1 0.5 — mA Saturation Voltage Ee = 1 mW/cm2 IC = 2mA VCE(SAT) — — 0.4 V Rise Time VCE = 5V, RL = 1000Ω tr — 15 — µs Fall Time IC = 1mA tf — 15 — µs © 2005 Fairchild Semiconductor Corporation Page 2 of 6 4/11/05 RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR QTLP610CPD TYPICAL PERFORMANCE CURVES Fig. 2 Collector Dark Current vs. Ambient Temperature 106 5 100 Collector Dark Current (A) Collector Power Dissipation PC (mW) Fig. 1 Collector Power Dissipation vs. Ambient Temperature 80 60 40 20 2 107 5 2 108 5 2 109 5 2 1010 0 -25 0 25 50 0 75 85 100 75 100 Fig. 3 Relative Collector Current vs. Ambient Temperature Fig. 4 Collector Current vs. Irradiance 4.0 VCE = 5 V Ee=1 mW/cm2 120 100 80 60 40 3.0 2.5 2.0 1.5 1.0 0.5 20 0 –25 VCE = 5 V Ta = 25°C 3.5 Collector Current IC (mA) 140 Relative Collector Current (%) 50 Ambient Temperature TA (°C) 160 0 –10 0 10 20 30 40 50 60 0 70 1 2 3 4 5 Irradiance Ee (mW/cm2) Ambient Temperature TA (°C) Fig. 5 Spectral Sensitivity Fig. 6 Collector Current vs. Collector-Emitter Voltage 1.0 3.5 3 0.8 Collector Current IC (mA) Relative Spectral Sensitivity 25 Ambient Temperature TA (°C) 0.6 0.4 0.2 H=2.0mW/cm2 2.0 2 H=1.5mW/cm2 1.5 H=1.0mW/cm2 1 0.5 H=0.5mW/cm2 0 300 0 500 700 900 11000 1300 Wavelength λ (nm) © 2005 Fairchild Semiconductor Corporation 0 1 2 3 4 Collector-Emitter Voltage VCE (V) Page 3 of 6 4/11/05 RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR QTLP610CPD RECOMMENDED PRINTED CIRCUIT BOARD PATTERN 0.035 (0.90) 0.035 (0.90) 0.008 (0.20) 0.008 (0.20) Light Emitting Direction 0.059 (1.50) 0.059 (1.50) 0.035 (0.90) 0.035 (0.90) 0.079 (2.00) 0.079 (2.00) 0.197 (5.00) 0.197 (5.00) Mounting Example RECOMMENDED IR REFLOW SOLDERING PROFILE 5 sec MAX soldering time 240° C MAX +5° C/s MAX -5° C/s MAX 60 - 120 sec Preheating 120 - 150° C MAX © 2005 Fairchild Semiconductor Corporation Page 4 of 6 4/11/05 RIGHT ANGLE SURFACE MOUNT INFRARED PHOTOTRANSISTOR QTLP610CPD TAPE AND REEL DIMENSIONS 8.4 +1.5 -0.0 11.0 Ø62.0±0.5 2.5 0± 0.5 Ø180±1 5 ±0. 2.5 +0.5 -0.0 Ø12.75 +0.25 -0.0 2.0±0.05 3.5±0.05 1.75 Progressive direction 4.0 0.23±0.1 Ø1.55.±05 3.20 8.0 1 2 1 Emitter 2 Collector 4.0 2.06 1.32 Dimensional tolerance is ± 0.1mm unless otherwise specified Angle: ± 0.5 Unit: mm © 2005 Fairchild Semiconductor Corporation Page 5 of 6 4/11/05 RIGHT ANGLE SURFACE MOUNT INFRARED EMITTING DIODE QTLP610CPD DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2005 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 6 of 6 4/11/05