GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 FEATURES • Two-line ESD-protection device 1 2 • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • Space saving SOT-23 package 3 20456 20512 • AEC-Q101 qualified 1 • e3 - Sn • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC YYY XX XX MARKING (example only) 20357 YYY = type code (see table below) XX = date code ORDERING INFORMATION DEVICE NAME GSOT03C GSOT04C GSOT05C GSOT08C GSOT12C GSOT15C GSOT24C GSOT36C ENVIRONMENTAL STATUS ORDERING CODE Standard GSOT03C-GS08 Green GSOT03C-V-G-08 Standard GSOT04C-GS08 Green GSOT04C-V-G-08 Standard GSOT05C-GS08 Green GSOT05C-V-G-08 Standard GSOT08C-GS08 Green GSOT08C-V-G-08 Standard GSOT12C-GS08 Green GSOT12C-V-G-08 Standard GSOT15C-GS08 Green GSOT15C-V-G-08 Standard GSOT24C-GS08 Green GSOT24C-V-G-08 Standard GSOT36C-GS08 Green GSOT36C-V-G-08 TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY 3000 15 000 3000 15 000 3000 15 000 3000 15 000 3000 15 000 3000 15 000 3000 15 000 3000 15 000 ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 85824 Rev. 2.0, 22-Jul-10 For technical questions, contact: [email protected] www.vishay.com 1 GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 PACKAGE DATA DEVICE NAME PACKAGE NAME GSOT03C SOT-23 GSOT04C SOT-23 GSOT05C SOT-23 GSOT08C SOT-23 GSOT12C SOT-23 GSOT15C SOT-23 GSOT24C SOT-23 GSOT36C SOT-23 TYPE CODE ENVIRONMENTAL STATUS WEIGHT 03C Standard 8.8 mg C1G Green 8.1 mg 04C Standard 8.8 mg C8G Green 8.1 mg 05C Standard 8.8 mg C2C Green 8.1 mg 08C Standard 8.8 mg C3G Green 8.1 mg 12C Standard 8.8 mg C4G Green 8.1 mg 15C Standard 8.8 mg C5G Green 8.1 mg 24C Standard 8.8 mg C6G Green 8.1 mg 36C Standard 8.8 mg C7G Green 8.1 mg MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) UL 94 V-0 MSL level 1 260 °C/10 s at terminals (according J-STD-020) ABSOLUTE MAXIMUM RATINGS GSOT03C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature SYMBOL VALUE UNIT 30 A 30 A 369 W 504 W IPPM PPP VESD ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C SYMBOL VALUE UNIT 30 A 30 A 429 W 564 W ABSOLUTE MAXIMUM RATINGS GSOT04C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature www.vishay.com 2 TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature IPPM PPP ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C VESD For technical questions, contact: [email protected] Document Number: 85824 Rev. 2.0, 22-Jul-10 GSOT03C to GSOT36C Two-Line ESD-Protection in SOT-23 Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS GSOT05C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature SYMBOL VALUE UNIT 30 A 30 A 480 W 612 W ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C SYMBOL VALUE UNIT 18 A 18 A 345 W 400 W ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C SYMBOL VALUE UNIT 12 A 12 A 312 W 337 W ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C IPPM PPP VESD ABSOLUTE MAXIMUM RATINGS GSOT08C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature IPPM PPP VESD ABSOLUTE MAXIMUM RATINGS GSOT12C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Document Number: 85824 Rev. 2.0, 22-Jul-10 TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature IPPM PPP VESD For technical questions, contact: [email protected] www.vishay.com 3 GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 ABSOLUTE MAXIMUM RATINGS GSOT15C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature SYMBOL VALUE UNIT 8 A 8 A 345 W 400 W IPPM PPP VESD ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C SYMBOL VALUE UNIT 5 A 5 A 235 W 240 W ABSOLUTE MAXIMUM RATINGS GSOT24C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature IPPM PPP VESD ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C SYMBOL VALUE UNIT 3.5 A 3.5 A 248 W 252 W ABSOLUTE MAXIMUM RATINGS GSOT36C PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature TEST CONDITIONS Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature IPPM PPP ± 30 kV ± 30 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C VESD BiAs-MODE (2-line bidirectional asymmetrical protection mode) With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1 and pin 3 offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and asymmetrical (BiAs). www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 85824 Rev. 2.0, 22-Jul-10 GSOT03C to GSOT36C Two-Line ESD-Protection in SOT-23 Vishay Semiconductors L1 L2 2 1 BiAs 3 Ground 20358 If a higher surge current or peak pulse current (IPP) is needed, both protection diodes in the GSOTxxC can also be used in parallel in order to “double” the performance. This offers: • double surge power = double peak pulse current (2 x IPPM) • half of the line inductance = reduced clamping voltage • half of the line resistance = reduced clamping voltage • double line capacitance (2 x CD) • double reverse leakage current (2 x IR) L1 2 1 3 Ground 20359 ELECTRICAL CHARACTERISTICS GSOT03C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected at IR = 100 μA at VR = 3.3 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 1.6 V; f = 1 MHz Nchannel VRWM IR VBR 3.3 4 - 4.6 5.7 10 1 4.5 420 260 2 100 7.5 12.3 1.2 600 - lines V μA V V V V V pF pF VC VF CD Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) ELECTRICAL CHARACTERISTICS GSOT04C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected at IR = 20 μA at VR = 4 V at IR = 1 mA at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 2 V; f = 1 MHz Nchannel VRWM IR VBR 4 5 - 6.1 7.5 11.2 1 4.5 310 200 2 20 9 14.3 1.2 450 - lines V μA V V V V V pF pF VC VF CD Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) Document Number: 85824 Rev. 2.0, 22-Jul-10 For technical questions, contact: [email protected] www.vishay.com 5 GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 ELECTRICAL CHARACTERISTICS GSOT05C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines at IR = 10 μA VRWM 5 - - V Reverse current at VR = 5 V IR - - 10 μA Reverse breakdown voltage at IR = 1 mA VBR 6 6.8 - V - 7 8.7 V - 12 16 V - 1 1.2 V Protection paths Reverse working voltage Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 30 A at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 2.5 V; f = 1 MHz VC VF CD - 4.5 - V - 260 350 pF - 150 - pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) ELECTRICAL CHARACTERISTICS GSOT08C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Reverse working voltage at IR = 5 μA VRWM 8 - - V Reverse current at VR = 8 V IR - - 5 μA Reverse breakdown voltage at IR = 1 mA VBR 9 10 - V - 10.7 13 V - 15.2 19.2 V - 1 1.2 V Protection paths Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 18 A at IPP = 1 A at IPP = IPPM = 18 A at VR = 0 V; f = 1 MHz at VR = 4 V; f = 1 MHz VC VF CD - 3 - V - 160 250 pF - 80 - pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) ELECTRICAL CHARACTERISTICS GSOT12C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Reverse working voltage at IR = 1 μA VRWM 12 - - V Reverse current at VR = 12 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 13.5 15 - V - 15.4 18.7 V - 21.2 26 V - 1 1.2 V Protection paths Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 12 A at IPP = 1 A at IPP = IPPM = 12 A at VR = 0 V; f = 1 MHz at VR = 6 V; f = 1 MHz VC VF CD - 2.2 - V - 115 150 pF - 50 - pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 85824 Rev. 2.0, 22-Jul-10 GSOT03C to GSOT36C Two-Line ESD-Protection in SOT-23 Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT15C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Reverse working voltage at IR = 1 μA VRWM 15 - - V Reverse current at VR = 15 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 16.5 18 - V - 19.4 23.5 V - 24.8 28.8 V - 1 1.2 V - 1.8 - V - 90 120 pF - 35 - pF Protection paths Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 8 A at IPP = 1 A at IPP = IPPM = 8 A at VR = 0 V; f = 1 MHz at VR = 7.5 V; f = 1 MHz VC VF CD Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) ELECTRICAL CHARACTERISTICS GSOT24C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Reverse working voltage at IR = 1 μA VRWM 24 - - V Reverse current at VR = 24 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 27 30 - V - 34 41 V - 41 47 V V Protection paths Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 5 A at IPP = 1 A at IPP = IPPM = 5 A at VR = 0 V; f = 1 MHz at VR = 12 V; f = 1 MHz VC VF CD - 1 1.2 - 1.4 - V - 65 80 pF - 20 - pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) ELECTRICAL CHARACTERISTICS GSOT36C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Reverse working voltage at IR = 1 μA VRWM 36 - - V Reverse current at VR = 36 V IR - - 1 μA Reverse breakdown voltage at IR = 1 mA VBR 39 43 - V - 49 60 V - 59 71 V - 1 1.2 V Protection paths Reverse clamping voltage Forward clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 3.5 A at IPP = 1 A at IPP = IPPM = 3.5 A at VR = 0 V; f = 1 MHz at VR = 18 V; f = 1 MHz VC VF CD - 1.3 - V - 52 65 pF - 12 - pF Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) BiSy-MODE (1-line bidirectional symmetrical protection mode) If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be connected. Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes one diode in forward direction and the other one in reverse direction. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances (resistances and inductances) of the protection device. Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional and symmetrical (BiSy). Document Number: 85824 Rev. 2.0, 22-Jul-10 For technical questions, contact: [email protected] www.vishay.com 7 GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 3 1 L1 2 BiSy Ground 20361 ELECTRICAL CHARACTERISTICS GSOT03C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IR = 100 μA VRWM 3.8 - - V Reverse current at VR = 3.8 V IR - - 100 μA Reverse breakdown voltage at IR = 1 mA VBR 4.5 5.3 - V - 7 8.4 V - 14 16.8 V - 210 300 pF - 190 - pF Protection paths Reverse clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 1.6 V; f = 1 MHz VC CD Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) ELECTRICAL CHARACTERISTICS GSOT04C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IR = 20 μA VRWM 4.5 - - V Reverse current at VR = 4:5 V IR - - 20 μA Reverse breakdown voltage at IR = 1 mA VBR 5.5 6.8 - V - 7.5 9 V - 15.7 18.8 V - 155 225 pF - 135 - pF Protection paths Reverse clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 30 A at VR = 0 V; f = 1 MHz at VR = 2 V; f = 1 MHz VC CD Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) ELECTRICAL CHARACTERISTICS GSOT05C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IR = 10 μA VRWM 5.5 - - V Reverse current at VR = 5.5 V IR - - 10 μA Reverse breakdown voltage at IR = 1 mA VBR 6.5 7.5 - V - 8.1 9.7 V - 17 20.4 V - 130 175 pF - 100 - pF Protection paths Reverse clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 18 A at VR = 0 V; f = 1 MHz at VR = 4 V; f = 1 MHz VC CD Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 85824 Rev. 2.0, 22-Jul-10 GSOT03C to GSOT36C Two-Line ESD-Protection in SOT-23 Vishay Semiconductors ELECTRICAL CHARACTERISTICS GSOT08C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IR = 5 μA VRWM 8.5 - - V Reverse current at VR = 8.5 V IR - - 5 μA Reverse breakdown voltage at IR = 1 mA VBR 9.5 10.7 - V - 11.7 14 V - 18.5 22.2 V - 80 125 pF - 60 - pF Protection paths Reverse clamping voltage Capacitance at IPP = 1 A at IPP = IPPM = 18 A at VR = 0 V; f = 1 MHz at VR = 4 V; f = 1 MHz VC CD Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) ELECTRICAL CHARACTERISTICS GSOT12C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines at IR = 1 μA VRWM 12.5 - - V at VR = 12.5 V IR - - 1 μA at IR = 1 mA VBR 13.5 15.7 - V - 16.4 19.7 V - 23.4 28.1 V - 58 75 pF - 36 - pF at IPP = 1 A at IPP = IPPM = 12 A at VR = 0 V; f = 1 MHz at VR = 7.5 V; f = 1 MHz VC CD Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) ELECTRICAL CHARACTERISTICS GSOT15C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines at IR = 1 μA VRWM 15.5 - - V at VR = 15.5 V IR - - 1 μA at IR = 1 mA VBR 17 18.7 - V - 20.4 24.5 V - 26.6 30.6 V - 45 60 pF - 25 - pF at IPP = 1 A at IPP = IPPM = 8 A at VR = 0 V; f = 1 MHz at VR = 7.5 V; f = 1 MHz VC CD Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) ELECTRICAL CHARACTERISTICS GSOT24C PARAMETER Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Capacitance TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines at IR = 1 μA VRWM 24.5 - - V at VR = 24.5 V IR - - 1 μA at IR = 1 mA VBR 27.5 30.7 - V - 34 41 V - 40 48 V - 33 40 pF - 18 - pF at IPP = 1 A at IPP = IPPM = 5 A at VR = 0 V; f = 1 MHz at VR = 12 V; f = 1 MHz VC CD Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) Document Number: 85824 Rev. 2.0, 22-Jul-10 For technical questions, contact: [email protected] www.vishay.com 9 GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 ELECTRICAL CHARACTERISTICS GSOT36C PARAMETER Protection paths TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines at IR = 1 μA VRWM 36.5 - - V at VR = 36.5 V IR - - 1 μA at IR = 1 mA VBR 39.5 43.7 - V - 50 60 V - 60 72 V - 26 33 pF - 10 - pF Reverse working voltage Reverse current Reverse breakdown voltage at IPP = 1 A Reverse clamping voltage at IPP = IPPM = 3.5 A at VR = 0 V; f = 1 MHz Capacitance at VR = 18 V; f = 1 MHz VC CD Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0° t 0.5 (0.020) 0.45 (0.018) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) 0.7 (0.028) 0.95 (0.037) 0.9 (0.035) 1 (0.039) 0.9 (0.035) Foot print recommendation: 2 (0.079) 1.43 (0.056) 1 (0.039) 0.9 (0.035) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 0.95 (0.037) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 www.vishay.com 10 For technical questions, contact: [email protected] Document Number: 85824 Rev. 2.0, 22-Jul-10 SOT-23 SOT-23 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches) 1.15 (0.045) 8° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0° t o 0.5 (0.020) 0.45 (0.018) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) 0.7 (0.028) 0.95 (0.037) 0.9 (0.035) 1.43 (0.056) 1 (0.039) 0.9 (0.035) Foot print recommendation: 2 (0.079) 1 (0.039) 0.9 (0.035) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 0.95 (0.037) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Document Number: 84004 Rev. 1.3, 01-Jul-10 For technical questions within your region, please contact one of the following: Diodes [email protected], [email protected], [email protected] www.vishay.com 28 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1