TI GC5325

GC5325
www.ti.com .............................................................................................................................................................................................. SLWS215 – JANUARY 2009
GC5325 Wideband Digital Predistortion Transmit Processor
•
FEATURES
1
• Integrated CFR and DPD Functions
• Up to 20-MHz Combined Signal Bandwidth
• CFR: Typically Meets 3GPP TS 25.141 <6.5 dB
PAR, <8 dB PAR for 802.16e Signals
• DPD: Memory Compensation, Typical ACLR
Improvement of 20 dB to 30 dB or More
• Transmit- and Feedback-Channel Equalizers
• 352-Ball S-PBGA Package, 27 mm × 27 mm
• 1.2-V Core, 3.3-V I/O
• Typical Power Consumption = 1.9 W
23
•
Flexible DSP Algorithm Supports Existing and
Emerging Wireless Standards
Supports Direct Interface to TI High-Speed
Data Converters
APPLICATIONS
•
•
•
•
3GPP (W-CDMA, TD-SCDMA) Base Stations
3GPP2 (CDMA2000) Base Stations
WiMAX and WiBRO (OFDMA) Base Stations
Multicarrier Power Amplifiers (MCPAs)
SYSTEM BLOCK DIAGRAM
DAC5682Z
GC5325
Baseband
Input
DAC
I/Q
DAC
TRF3703
I/Q
Modulator
HPA
LPA
CFR–DPD
TRF3761
LO
CDCM7005
ADC
'C6727
ADS6149
THS9001
Mixer
DSP
B0278-02
DESCRIPTION
The GC5325 is a wideband digital predistortion transmit processor that includes a crest factor reduction (CFR)
block and a digital predistortion (DPD) block with its associated feedback chain and capture buffers. The GC5325
processes composite input bandwidths of up to 20 MHz and processes DPD sample rates of up to 140 MHz. The
GC5325 accepts a composite signal over an interleaved parallel interface at a data rate of up to 140 MSPS. The
GC5325 CFR block reduces the peak-to-average ratio (PAR) of wideband digital signals provided in quadrature
(I/Q) format, such as those used in third-generation (3G) code division multiple access (CDMA) wireless and
orthogonal frequency division multiple access (OFDMA) applications. The GC5325 DPD block reduces
adjacent-channel leakage ratio (ACLR), or out-of-band energy, by 20 dB to 30 dB or more. The efficiency of
follow-on power amplifiers (PAs) is substantially improved by reducing the PAR and ACLR of digital signals. The
digital-to-RF conversion can be further simplified by the fractional interpolator between the CFR and the DPD
blocks, and a bulk upconverter (BUC) in the final stage of the GC5325. This feature typically eliminates the need
for superheterodyne (dual-stage) upconversion architectures. Transmit and feedback NCO/mixers provide
additional flexibility in the system frequency planning.
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
TMS320C64x, C55x, C64x are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
GC5325
SLWS215 – JANUARY 2009 .............................................................................................................................................................................................. www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
PACKAGED DEVICE (1)
TC
352-ball S-PBGA package, 27 mm × 27 mm
–40°C to 85°C
(1)
GC5325IZND
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
GC5325 FUNCTIONAL BLOCK DIAGRAM
RESETB SYNC SYNC INT UPDATA UPADDR OEB RDB WRB CEB
OUT
3
16
10
GC5325
MPU Interface
TCK
TRSTB
TDI
TMS
TDO
4
JTAG
BBin
16
BBFR
Input
Interface
CFR
Fractional
Farrow
Resampler
Circular
Limiter
MFIO[19:18]
2
(Optional;
additional
2 LSBs)
FB
(LVDS)
18 Pairs
ADC
Interface
Real to Complex
(or Bypass)
Feedback
Equalizer
BB
PLL
BBCLK
DPD
PLL
DPDCLK
(LVDS)
Feedback NL
Correction
SYNCD
TX
(Diff.)
19 Pairs
DAC
Interface
Bulk Interpolation
+ Mixer
Transmit
Equalizer
(LVDS)
DPD
Capture Buffers
BB Clock Domain
DPD Clock Domain
B0279-02
2
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DETAILED DESCRIPTION
GC5325 Introduction
The GC5325 is a flexible transmit sector processor that includes a crest factor reduction (CFR) block and a
digital predistortion (DPD) block and its associated feedback chain. The GC5325 processes composite input
bandwidths of up to 40 MHz and processes DPD expansion bandwidths of up to 140 MHz (actual performance
may vary for signal bandwidths exceeding 23 MHz). By reducing both the peak-to-average ratio (PAR) of the
input signals using the CFR block and linearizing the power amplifier (PA) using the DPD block, the GC5325
reduces the costs of multicarrier PAs (MCPA) for wireless infrastructure applications. The GC5325 applies CFR
and DPD while a separate microprocessor (a Texas Instruments TMS320C6727 DSP) is used to optimize
performance levels and maintain target PA performance levels.
By including the GC5325 in their system architecture, manufacturers of BTS equipment can realize significant
savings on power amplifier bill of materials (BOM) and overall operational costs due to the PA efficiency
improvement. The GC5325 meets multicarrier 3G performance standards (PCDE, composite EVM, and ACLR) at
PAR levels down to 6.5 dB and improves the ACLR, at the PA output, by 20 dB to 30 dB or more. The GC5325
integrates easily into the transmit signal chain between baseband processors such as the Texas Instruments
TMS320C64x™ DSP family and their high-performance data converters.
A
•
•
•
•
•
•
•
typical GC5325 system application would include the following transmit-chain components:
TMS320C6727 digital signal processor (DSP)
DAC5682 16-bit, 1-GSPS DAC (transmit path)
CDCM7005 clock generator
TRF3761 integrated VCO/PLL synthesizer
TRF3703 quadrature modulator
ADS5517 11-bit 200-MSPS or ADS6149 14-bit, 250-MSPS ADC (feedback path)
AMC7823 analog monitoring and control circuit with GPIO and SPI
Baseband Interface
The GC5325 BB interface block accepts baseband signals over an interleaved parallel interface at a data rate of
up to 140 MHz. The input interface supports up to 12 separate baseband carriers. The GC5325 input interface
can be programmed in a wideband mode in which users are required to channelize the data using an external
processor.
Gain/Pilot Insertion/AntCal Insertion/Power Meter
Baseband gain can be applied on a per-carrier basis to accurately control the individual channel power through
the system. Also present is the functionality for adding pilot codes to the data stream for antenna calibration
applications. Independent programmable RMS power meters for up to 12 channels are also included in this block
of the device.
Crest Factor Reduction (CFR)
The GC5325 CFR block selectively reduces the peak-to-average ratio (PAR) of wideband digital signals provided
in quadrature (I and Q) format, such as those used in third-generation (3G) code division multiple access
(CDMA) wireless applications. The CFR block can reduce the PAR of W-CDMA Test Model 1 and Test Model 3
signals down to 6.5 dB output PAR while still meeting all 3GPP requirements for ACLR, composite EVM, and
peak code domain error (PCDE). The CFR block accepts input sampling rates up to 140 MSPS complex from the
input interface.
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Fractional Farrow Resampler (FR)
The CFR block output signal bandwidth is up to 40 MHz wide, sampled at up to 70 MSPS. However; the DPD
block provides PA compensation over an expansion bandwidth of up to 140 MHz, using a complex sampling rate
of up to 140 MSPS. To provide the requisite sampling rate of up to 140 MSPS at the input to DPD, the output of
the CFR block must be resampled. The GC5325 performs this (nominally 2×) upsampling function using a
Farrow filter resampler. The user-programmable Farrow resampler supports upsampling rates from 1× to 64×,
with 16-bit precision on the interpolation ratio. It marks the transition of the input clock domain (driven by the
input interface clock) to the transmit domain (driven by the DAC sampling clock).
Digital Predistortion (DPD)
The DPD block provides predistortion for up to Nth-order nonlinearities, and can correct multiple orders and
lengths of PA memory effects. The predistortion correction terms are computed by an external processor (for
example, TI TMS320C6727 DSP) based on PA feedback data captured in the GC5325. The external processor
reads the captured data buffers from the GC5325 and writes back the newly computed DPD correction terms on
a continuous basis. TI provides a base delivery of 'C6727 software to GC5325 customers that achieves a typical
ACLR improvement of 20 dB to 30 dB or more when compared to a PA without DPD. The standard EMIF bus
allows the user to provide an alternate DPD adaptation algorithm and DSP embodiment, if desired.
Bulk Upconverter (BUC)
The bulk upconverter block can interpolate the DPD block output by 1.5×, 2×, 3× with a complex output, or 6×
with a real output. The complex-to-real converter block optionally modifies the DPD complex output stream into a
real output stream. The bulk upconverter has flexible mixing options between its various interpolation stages.
When used in combination, the bulk upconverter and the complex-to-real functions allow the GC5325 to output a
16-bit real signal at up to 840 MSPS, or a complex signal at up to 420 MSPS. Next-generation data converters
can accept sampling rates as high as 1 GSPS and sample widths of 16 bits. In a typical application, the bulk
upconverter outputs a 737.28-MSPS real sampling rate (16 bits/sample) directly to the DAC on a modified center
frequency of 184.32 MHz (1/4 of the 737.28-MSPS sampling rate). The bulk upconverter has multiple
high-speed, low-voltage, single-ended/differential output interfaces to existing and future TI DACs.
Feedback Path (FB)
The feedback block accepts an external A/D converter input that represents the PA output signal. This feedback
signal is processed by a feedback path that adjusts for gain, frequency, and phase anomalies in the RF-to-IF
downconversion chain. The feedback path includes an 8-tap complex receive equalizer and lookup tables that
can compensate for the nonlinearities in the RF-to-IF part of the feedback chain. The block also includes a
real-to-complex conversion to facilitate signal processing. The GC5325 connects directly to the ADS5444,
ADS5545, ADS5546, and ADS5517 among others, without requiring external components. The GC5325
simplifies timing by providing a FIFO for each ADC port, sampling the input data using the ADC data-ready
signal.
Microprocessor Interface (MPU)
The MPU interface is designed to interface with external memory interface (EMIF) ports on TI DSPs operating in
asynchronous mode. It consists of a 16-bit bidirectional data bus, a 10-bit address bus, and RDB, WRB, OEB,
and CEB control signals. The interface fully supports TI C55x™, C64x™ DSPs and, with minimal effort, supports
the low-cost 'C6727 floating-point DSP.
Smart Capture Buffers (SCB)
The GC5325 has two capture buffers, each 4096 complex words deep, which are periodically read by the
external coefficient update controller (DSP) in order to optimize the DPD coefficients. The first capture buffer can
be used to capture:
• The output of the Farrow resampler; this is also called the reference signal.
• The feedback output; this represents the waveform as seen by the PA.
• The error output
• Testbus(31:16)
The second capture buffer can be used to provide:
4
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•
•
•
•
The output of the Farrow resampler; this is also called the reference signal.
The feedback output; this represents the waveform as seen by the PA.
The error output
Testbus(15:0)
The reference and feedback buffers are time-aligned by the GC5325, because there may be a delay of tens or
even hundreds of samples between the transmitted signal and the feedback signal from the PA output. The
capture controller can trigger a capture on several different metrics, including an above-threshold peak count or
an average signal power value.
Input and Output Syncs
The GC5325 features multiple-user programmable input syncs. These are typically used as trigger mechanisms
to activate features within the device. These triggers can be provided internally or through externally provided
inputs. The input syncs can be used to trigger:
• Power measurements
• Initializing/loading the feedback, equalizer, LUTs, etc.
• Flush out data within the processing blocks of the device
• Feedback path tuner alignment
• Capturing and sourcing of data through SCBs
Programmable Power Meters
There are three power meter locations/functions within the GC5325. The first is a channel RMS power meter.
The second power meter is located at the output of the CFR block, and the final power detector is similar to the
CFR output power detector and is located at the Farrow resampler output. This power meter can measure RMS
power integrated up to a million samples at the DPD sample rate.
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Pin Assignment and Descriptions
GND Package
(Bottom View)
26
A
25
24
23
22
VSS1 VSS1 VSS1 VSS1 FB1
19
18
16
FB9
VDD
FB31 FB35 VSSA2 SYNCC BB15 BB11 BB7
SHV
BB3
BB0 VSS1 VSS1 VSS1
BB4
BB1 VSS1 VSS1 VDD1
BB5
BB2 VSS1 VDD1 VSS1
FB11 FB15 FB17 FB21 FB25 FB27
12
11
9
8
7
6
3
FB5
14
10
5
20
17
15
13
21
4
2
1
B
VDD1 VSS1 VSS1 VSS1 FB0
FB4
VDD
FB30 FB34 VDDA2 SYNCB BBFR BB12 BB8
FB8 FB10 FB14 FB16 FB20 FB24 FB26
SHV
C
VSS1 VDD1 VSS1 VSS1
NC
FB3
FB7 VDD1 FB13
VDD
ADC
FB29 FB33 VDD1 SYNCA BBCLK BB13 BB9
FB19 FB23 VDD1
SHV
IREF
D
VSS1 VSS1 VDD1 VSS1
NC
FB2
FB6 VDD1 FB12
VDD
SYNC
ADC
FB28 FB32 VSS1
FB18 FB22 VDD1
VDD1 BB14 BB10 BB6 VSS1 VDD1 VSS1 VSS1
SHV
OUT
VREF
E
VSS1 VSS1 VSS1 VDD1
VDD1 VSS1 VSS1 VSS1
F
VSS1 VSS1 VSS1 VDD1
VDD1 VDD1 VSS1 VSS1
G
VSS1 VSS1 VSS1
VDD
SHV
VDD
VSS1 VSS1 VSS1
SHV
VDD1
UP
UP
UP
ADDR2 ADDR1 ADDR0
VDD1
VDD1
UP
UP
UP
ADDR5 ADDR4 ADDR3
VDD
VDD1
SHV
VDD1
UP
UP
UP
ADDR8 ADDR7 ADDR6
VDD1
VDD1
UP
VDD
WRB
SHV
ADDR9
VDD1
VDD1 OEB
H
NC
NC
J
VPP1
NC
K
NC
NC
L
NC
NC
NC
M
NC
NC
NC
N
NC
NC
VDD
VDD1
SHV
VDD1
UP
UP
UP
DATA2 DATA1 DATA0
P
NC
NC MFIO18 VDD1
VDD1
VDD
VSS1 VSS1
SHV
R
VPP1 VDD1
NC
CEB
RDB
MFIO19 NC
NC
VDD1
VDD1
UP
UP
UP
DATA5 DATA4 DATA3
NC
VDD1
VDD1
UP
VDD
VPP2
SHV
DATA6
VDD
VDD1
SHV
VDD1
UP
UP
VPP2
DATA8 DATA7
T
NC
NC
U
NC
NC
V
NC
NC
NC
VDD1
VDD1
UP
UP
UP
DATA11 DATA10 DATA9
W
NC
NC
NC
VDD1
VDD1
UP
UP
UP
DATA14 DATA13 DATA12
Y
NC
VSS1 VSS1 VDD1
UP
VDD
VSS1 VSS1
SHV
DATA15
AA
VSS1 VSS1 VSS1 VDD1
VDD1 VSS1 VSS1 VSS1
AB
VSS1 VSS1 VSS1 VDD1
VDD1 VDD1 VSS1 VSS1
AC
VSS1 VSS1 VDD1
AD
VSS1 VDD1 VSS1 VSS1
DPD DPD
VSS1 VDDA1 TX3
IREF CLKC
AE
VDD1 VSS1 VSS1 VSS1
DPD
VDD
SYNCD
SHV
VREF
AF
VSS1 VSS1 VSS1 VSS1 VSS1
RESET VDD
SHV
B
DPD
VSS1 VDD1 TX2
CLK
TX6 TX10 TX14 VDDS VSS1
DAC
TX25 TX29 TX33 TX37 VSS1 VDD1 VDD2 VSS1 VDD1 VSS1 VSS1
REFP
TX7
TX11 TX15 VDDS VSS1
VDD
DAC
VDD1 VSS2 VSS1 VSS1 VDD1 VSS1
TX24 TX28 TX32 TX36
SHV
REFN
TX12 TX16 VDDS TX19 TX21 TX23 TX27 TX31 TX35 TRSTB TDI
TX0
TX4
TX8
SYNC
VSSA1 TX1
DC
TX5
TX9 TX13 TX17 VSS1 TX18 TX20 TX22 TX26 TX30 TX34 TMS
TCK
INTERVSS1 VSS1 VSS1 VDD1
RUPT
TDO
= Baseband Input
= Transmit Ouput
= Feedback Input
= Microprocessor Interface
= Miscellaneous
= Multi-Function Input/Output
= Power and Biasing
= JTAG Interface
= NC
TEST
VSS1 VSS1 VSS1
MODE
P0077-01
6
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Table 1. TERMINAL FUNCTIONS
TERMINAL
NAME
I/O
NO.
DESCRIPTION
MICROPROCESSOR INTERFACE
OEB
M3
I
Output enable
CEB
M2
I
Chip enable
RDB
M1
I
Read
WRB
L2
I
Write
UPADDR[9:0]
L1, K3, K2, K1, J3, J2, J1, H3, H2, H1
I
Microprocessor address
UPDATA[15:0]
Y1, W3, W2, W1, V3, V2, V1, U3, U2, T1, R3, R2, R1,
N3, N2, N1
I/O
Microprocessor data
INTERRUPT
AE5
O
Microprocessor interrupt
POWER AND BIASING
VDD1
B1, B26, C2, C10, C14, C19, C25, D3, D8, D14, D19,
D24, E4, E23, F3, F4, F23, H4, H23, J4, J23, K4, K23,
L4, L23, M4, M23, N4, N23, P4, P23, R4, R23, T4,
T23, U4, U23, V4, V23, W4, W23, Y23, AA4, AA23,
AB3, AB4, AB23, AC3, AC6, AC19, AC24, AD2, AD6,
AD25, AE1, AE26
PWR
1.2-V supply
VSS1
A1, A2, A3, A23, A24, A25, A26, B2, B3, B23, B24,
B25, C1, C3, C23, C24, C26, D1, D2, D4, D10, D23,
D25, D26, E1, E2, E3, E24, E25, E26, F1, F2, F24,
F25, F26, G1, G2, G3, G24, G25, G26, P1, P2, Y2,
Y3, Y24, Y25, AA1, AA2, AA3, AA24, AA25, AA26,
AB1, AB2, AB24, AB25, AB26, AC1, AC2, AC4, AC7,
AC13, AC20, AC25, AC26, AD1, AD3, AD4, AD13,
AD20, AD23, AD24, AD26, AE2, AE3, AE4, AE23,
AE24, AE25, AF1, AF2, AF3, AF14, AF22, AF23,
AF24, AF25, AF26
PWR
Ground
VDD2
AC5
NC
Do not connect
VSS2
AD5
NC
Do not connect
VDDS
AC14, AD14, AE14
PWR
1.8-V supply
VDDSHV
A13, B13, C13, D13, G4, G23, K24, L3, N24, P3, T3,
U24, Y4, AC22, AD7, AE20
PWR
3.3-V supply
VDDA1
AD19
PWR
1.2-V supply (requires filtering)
VSSA1
AF20
PWR
Ground (requires filtering)
VDDA2
B10
PWR
1.2-V supply (requires filtering)
VSSA2
A10
PWR
Ground (requires filtering)
VPP1
H24, J26
PWR
1.2-V supply
VPP2
T2, U1
PWR
1.2-V supply
DPDIREF
AD22
PWR
DPD bias 1 kΩ to VSS
DPDVREF
AE22
PWR
DPD bias to VDD
DACREFP
AC12
PWR
DAC bias 50-Ω to VSS
DACREFN
AD12
PWR
DAC bias 50-Ω to VDDS
ADCIREF
C17
PWR
ADC bias 1 kΩ to VSS
ADCVREF
D17
PWR
ADC bias to VDD
BASEBAND INPUT
BB[15:0]
A8, D7, C7, B7, A7, D6, C6, B6, A6, D5, C5, B5, A5,
C4, B4, A4
I
Baseband input signal
BBCLK
C8
I
Baseband input clock
BBFR
B8
I
Baseband frame for sample and channel timing
MFIO[19:18]
R26, P24
I
LSBs for 18-bit baseband input signal [-2, -1]
I
Chip reset (active-low .Required.)
MISCELLANEOUS
RESETB
AC23
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Table 1. TERMINAL FUNCTIONS (continued)
TERMINAL
NAME
I/O
NO.
DESCRIPTION
SYNCA
C9
I
Programmable general-purpose sync
SYNCB
B9
I
Programmable general-purpose sync
SYNCC
A9
I
Programmable general-purpose sync
SYNCD
AE21
I
Programmable general-purpose sync
SYNCDC
AF21
I
Complementary of SYNCD
SYNCOUT
D9
O
Programmable general-purpose sync output
DPDCLK
AC21
I
Clock to DPD
DPDCLKC
AD21
I
Complementary clock to DPD
TESTMODE
AF4
I
Tie to ground
JTAG INTERFACE
TCK
AF6
I
JTAG clock
TDI
AE6
I
JTAG data in
TDO
AF5
O
JTAG data out
TRSTB
AE7
I
JTAG reset (active-low); pull down if JTAG is not used.
TMS
AF7
I
JTAG mode select
TX[37:0]
AC8, AD8, AE8, AF8, AC9, AD9, AE9, AF9, AC10,
AD10, AE10, AF10, AC11, AD11, AE11, AF11, AE12,
AF12, AE13, AF13, AF15, AE15, AD15, AC15, AF16,
AE16, AD16, AC16, AF17, AE17, AD17, AC17, AF18,
AE18, AD18, AC18, AF19, AE19
O
Transmit to DAC(s)
FB[35:0]
A11,
A15,
A18,
A21,
I
Feedback from ADC(s)
NC
Y26, W24, W25, W26, V24, V25, V26, U25, U26, T24,
T25, T26, R24, R25, P25, P26, N25, N26, M24, M25,
M26, L24, L25, L26, K25, K26, J24, J25, H25, H26,
D22, C22
–
No connect
SIGNALS (See mode selection guide for pin assignment)
B11, C11,
B15, C15,
B18, C18,
B21, C21,
D11, A12, B12, C12, D12, A14, B14,
D15, A16, B16, C16, D16, A17, B17,
D18, A19, B19, A20, B20, C20, D20,
D21, A22, B22
10 W
VDD1
VDDA1 or VDDA2
0.01 mF
1 mF
10 W
VSS1
VSSA1 or VSSA2
S0315-01
Figure 1. GC5325 PLL Power Supply Filter
The two PLLs require an analog supply. These can be generated by filtering the core digital supply (Vdd). A
representative filter is shown in Figure 1. The two PLLs should have separate filters and be located as close as
reasonable to their respective pins (especially the bypass capacitors). The ferrite beads should be series 50R
(similar to Murata P/N: BLM31P500SPT Description: IND FB BLM31P500SPT 50R 1206). In particular, supply
VDDA1 must be less than or equal to VDD1 when VDD1 is at the low end of the required range. The series
resistor assures this condition is met.
8
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Table 2. GC5325 TX Interface Options
PIN FUNCTION
PIN NAME
I/O
DESCRIPTION
DAC[15:0]P
TX10, TX6, TX2, TX0, TX4, TX8, TX12, TX16, TX23, TX27,
TX31, TX35, TX32, TX36, TX29, TX25
O
DAC positive output
DAC[15:0]N
TX11, TX7, TX3, TX1, TX5, TX9, TX13, TX17, TX22, TX26,
TX30, TX34, TX33, TX37, TX28, TX24
O
DAC negative output
DACCLK
TX21
O
Clock to DAC
DACCLKC
TX20
O
Complementary clock to DAC
DACSYNCP
TX14
O
Positive output data sync
DACSYNCN
TX15
O
Negative output data sync
TX (Single-Channel HSTL)
Table 3. GC5325 FB Interface Options
PIN FUNCTION
PIN NAME
I/O
DESCRIPTION
Feedback (Single-Channel SDR LVDS or DDR LVDS)
ADC[15:0]P
FB2, FB4, FB6, FB8, FB10, FB12, FB14, FB16, FB20,
FB22, FB24, FB26, FB28, FB30, FB32, FB34
I
ADC positive feedback from PA output
ADC[15:0]N
FB3, FB5, FB7, FB9, FB11, FB13, FB15, FB17, FB21,
FB23, FB25, FB27, FB29, FB31, FB33, FB35
I
ADC negative feedback from PA output
ADCCLK
FB0
I
Clock from ADC
ADCLKC
FB1
I
Complementary clock from ADC
Feedback (Single- or Dual-Channel DDR LVDS)
ADCA[7:0]P
FB2, FB4, FB6, FB8, FB10, FB12, FB14, FB16
I
ADC-A positive feedback from PA output
ADCA[7:0]N
FB3, FB5, FB7, FB9, FB11, FB13, FB15, FB17
I
ADC-A negative feedback from PA output
ADCACLK
FB0
I
Clock from ADC-A
ADCACLKC
FB1
I
Complementary clock from ADC-A
ADCB[7:0]P
FB20, FB22, FB24, FB26, FB28, FB30, FB32, FB34
I
ADC-B positive feedback from PA output
ADCB[7:0]N
FB21, FB23, FB25, FB27, FB29, FB31, FB33, FB35
I
ADC-B negative feedback from PA output
ADCBCLK
FB18
I
Clock from ADC-B
ADCBCLKC
FB19
I
Complementary clock from ADC-B
MPU Interface Guidelines
The following section describes the hardware interface between the recommended microprocessor, external
memory, and the GC5325. Users may select a microprocessor that meets their specific system requirements.
Although the hardware can support multiple options, the recommended TMS320C6727 DSP is also fully
supported with host control and adaptation software. Figure 2 illustrates the hardware interface between the DSP
to GC5325 and SDRAM. The external memory is required to accommodate the computational efforts of the
adaptation algorithm. Although the system evaluation kit suggests dual parallel 64-Mb/PC133 (128-Mb) memory
modules provided by Samsung (K4S641632H-TC(L)75), other memory alternatives are available. The processing
speed or convergence time of the adaptation algorithm is not strictly limited by the external memory speed rating.
The use of an external inverter, with minimal propagation delay, is required for OEB of the GC5325; this device is
necessary when using a TMS320C6727 DSP. Additional documentation for the hardware interface is available in
the Hardware Designer’s Resource Guide application report (SPRAA87) and TMS320C672x DSP External
Memory Interface (EMIF) user's guide (SPRU711).
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C6727 DSP
Asynchronous
Mode
EM_D[31:0]
UPDATA[15:0]
EM_A[12:0]
UPADDR[9:1]
EM_BA[1:0]
UPADDR[0]
EM_CS[2]B
CEB
EM_RWB
OEB
EM_WEB
WRB
EM_OEB
RDB
AXRO[7]
INTERRUPT
GC5325
EM_CS[0]B
EM_WE_DQM[3:0]B
1
DQ[31:16] / DQ[15:0]
EM_CLK
A[11:0]
EM_CKE
CSB
EM_RASB
DQM[3:0]
EM_CASB
BA[1:0]
CLK
SDRAM
1M ´ 16 ´ 4
(64Mb) ´ 2
CKE
RASB
CASB
WEB
B0280-02
NOTE: Dual SDRAM modules are used, upper and lower EMIF data lines are split to access each respective memory
module.
Figure 2. DSP to GC5325/SDRAM Interface Specifications
In a typical implementation, the system configuration software resides locally (in nonvolatile memory) to ensure
proper operation at power up. The adaptation algorithm should also reside in the same location; at power up, the
host should transfer/load the software from the nonvolatile memory (FLASH) to the 'C6727 DSP. The size of the
software required to support the GC5325 and 'C6727 should be no more than 128 Mb (16 MB); however, this
allocation is subject to change pending algorithm improvements. The suggested host-to-DSP interface is through
the UHPI port. See Chapter 0.
The port can be configured into multiple modes of data transfer; the Multiplexed Host Address/Data Dual
Halfword Mode is suggested for this application.
Additional specifications and documents for the TMS320C6727 DSP are available from Texas Instruments at:
http://focus.ti.com/docs/prod/folders/print/tms320c6727b.html.
Typical Baseband Interface
The GC5325 baseband interface receives time-interleaved I and Q data for each channel over the 16- or 18-bit
input bus. The BB[15..0] bus is the 16-bit interface or the top 16 bits of the 18-bit interface. The frame strobe
BBFS signal is used to identify the first channel I data. The data is input in channel order, I then Q. The
baseband clock is used to register the interleaved IQ data and frame strobe.
The hardware sync signals SyncA, SyncB, and SyncC are used to time-align internal GC5325 operations. A
0-to-1 transition clocked by BBClock is an active sync signal.
10
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Customer
Baseband-Data
Processor
GC5325
FRAME STROBE
BBFR
BASEBAND
DATA[15..0]
BASEBAND
DATA[–1..–2]
BB[15..0]
MFIO[19..18]
SYNC-HW1
SYNC A
SYNC-HW2
SYNC B
SYNC-HW3
SYNC C
BASEBAND
CLOCK
BB CLK
B0292-02
Figure 3. Typical Baseband Interface
GENERAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
VDD, VDDA
Core supply voltage
VDDS
Digital supply voltage for TX
VDDSHV
Digital supply voltage
VIN
Input voltage (under/overshoot)
Tstg
VALUE
UNIT
–0.3 to 1.32
V
–0.3 to 2
V
–0.3 to 3.6
V
–0.5 to VDDSHV + 0.5
V
Clamp current for an input/output
–20 to 20
mA
Storage temperature
–65 to 150
°C
300
°C
260
=C
Lead soldering temperature, 10 seconds
ESD Classification Class 2 (Required 2-kV HBM, 500-V CDM) (Passed 2.5-kV
HBM, 500-V CDM, 200-V MM)
Moisture sensitivity Class 3 (1 week floor life at 30°C/60% H)
Reflow conditions JEDEC standard
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RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
VDD, VDDA2, VPP Core supply voltages.
Note VDDA2 ≤ VDD
See
(1)
MIN
TYP
MAX
UNIT
1.14
1.2
1.26
V
VDDA1
Analog supply for DPD PLL
1
1.1
VDD
V
VDDS
Digital supply voltage for TX
1.71
1.8
1.89
V
VDDSHV
Digital supply voltage
3.15
3.3
3.45
V
3
A
0.25
A
0.3
A
85
°C
105
°C
IDD, IDDA1, IDDA2, Combined supply current for Vdd, Vdda1,
IPP
Vdda2, and VPP
IDDS
Digital supply current for TX
IDDSHV
Digital supply current
TC
Case temperature
See
(2)
TJ
Junction temperature
See
(3)
(1)
(2)
(3)
-40
30
VDDA1 must be less than VDD1 when VDD1 is low. See recommended filtering circuit in Figure 1. Maximum observed current on
VDDA1 is 8 mA.
Chip specifications in are production tested to 90°C case temperature. QA tests are performed at 85°C.
Thermal management may be required for full-rate operation. Sustained operation at elevated temperatures reduces long-term reliability.
Lifetime calculations based on maximum junction temperature of 105°C.
THERMAL CHARACTERISTICS
PARAMETER
352 BGA at 4 W
UNITS
15
°C/W
Theta junction to ambient (1 m/s)
11.8
°C/W
RθJC
Thermal resistance, junction-to-case
0.92
°C/W
RθJB
Thermal resistance, junction-to-board
5.3
°C/W
RθJA
Thermal resistance, junction-to-ambient (still air)
RθJMA1
12
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GENERAL ELECTRICAL CHARACTERISTICS
Describes the electrical characteristics for the baseband interface, multifunction I/O (MFIO), DPD clock and fast sync, MPU
and JTAG interfaces over recommended operating conditions. Device is production tested at 90=C for the given specification
and characterized at –40=C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CMOS INTERFACE
VIL
CMOS voltage input, low
VIH
CMOS voltage input, high
0.8
V
2
VDDSHV
V
VOL
CMOS voltage output, low
IOL = 2 mA
VOH
CMOS voltage output, high
0.5
V
IOH = –2 mA
2.4
VDDSHV
|IPU|
V
Pullup current
VIN = 0 V
40
200
µA
|IIN|
Leakage current
VIN = 0 or VIN = VDDSHV
5
µA
100
DAC INTERFACE (DAC P/N[15:0])
VO(diff)
Output differential swing,
| VO(diff) | = | VOH – VOL |
(1)
250
mV
V(COMM)
Common mode voltage,
(VOH + VOL)/2
(1)
1000
mV
LVDS INTERFACE (FB[35:0], DPDCLK/C, SYNCD/C)
Vi
Input voltage range
Vi(diff)
Input differential voltage,
|Vpos – Vneg|
RIN
Input differential impedance
0
0 < Vi < 2000 mV
1000 mV < Vi < 1400 mV, FB[35:0] only
2000
250
mV
90
80
mV
120
Ω
2.2
A
POWER SUPPLY
Idyn
(1)
(2)
Core current
See
(2)
HSTL output levels are measured at 675 Mb/s delay and with 100-Ω load from P to N. Drive strength set to 0x360. Contact TI for
operations above 675 Mb/s.
Operating at 280 MHz core, 840 TX port, maximum filtering, nominal supplies
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GENERAL SWITCHING CHARACTERISTICS
Describes the electrical characteristics for the baseband interface, MFIO, Fast Sync, and MPU interfaces over recommended
operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
25
140
MHz
BASEBAND INTERFACE
fCLK(BB)
Baseband input clock frequency
tsu(BB)
Input data setup time before BBCLK↑
BB[15:0], BBFR, SYNCA, SYNCB,
and SYNCC; MFIO18/19
th(BB)
Input data hold time after BBCLK↑
BB[15:0], BBFR, SYNCA, SYNCB,
and SYNCC; MFIO18/19
th(SYNCA, -B, -C)
Input data hold time after BBCLK↑
Valid for SYNCA, SYNCB, and
SYNCC
DutyCLK(BB)
Duty cycle
tjCLK(BB)
Baseband input clock cycle-to-cycle jitter (1)
(1)
1.3
ns
1.5
ns
2
ns
30%
70%
–2.5%
2.5%
Percent of baseband PLL clock period. The baseband PLL clock is typically 2×–4× the baseband clock frequency.
1/fCLK(BB)
BBCLK
I(ch = 1, t = 1)
BB[15:0]
tsu(BB)
Q(ch = 1, t = 1)
Q(ch = N, t = 1)
I(ch = 1, t = 2)
th(BB)
BBFR
T0284-01
Figure 4. Baseband Timing Specifications (ex. Four Interleaved I/Q Channels)
14
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Table 12. DPD CLOCK AND FAST SYNC SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
MHz
fCLK(DPD)
DPD input clock frequency
100
280
DutyCLK(DPD)
DPD input clock duty cycle
30%
70%
th(SYNCD)
Input hold time after DPDCLK↑
tsu(SYNCD)
Input setup time after DPDCLK↑
th(SYNCA, -B, -C)
Input hold time after DPDCLK↑
tsu(SYNCA, -B, -C)
Input setup time after DPDCLK↑
tjCLK(DPD)
DPD clock cycle-to-cycle jitter
(1)
See (1)
0.2
ns
(1)
0.4
ns
2
ns
0.4
ns
See
–2.5%
2.5%
SYNCD is the preferred sync for DPD clock and clock domain.
DPDCLK
DPDCLKC
SYNCDC
SYNCD
tsu(SYNCD)
th(SYNCD)
SYNCA
SYNCB
SYNCC
tsu(SYNCA, -B, -C)
th(SYNCA, -B, -C)
T0286-01
Figure 5. DPD Clock and Fast Sync Timing Specifications
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MPU SWITCHING CHARACTERISTICS (READ)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
tsu(AD)
ADDR setup time to RDB↓
WRB is HIGH.
5
ns
tsu(CEB)
CEB setup time to RDB↓
WRB is HIGH.
7
ns
tsu(OEB)
OEB setup time to RDB↓
WRB is HIGH.
2
ns
td(RD)
DATA valid time after RDB↓
WRB is HIGH.
th(RD)
ADDR hold time to RDB↑
WRB is HIGH.
14
2
OEB, CEB hold time to RDB↑
ns
0
OEB hold time to RDB↑
2
tHIGH(RD)
Time RDB must remain HIGH between READs.
WRB is HIGH (1).
tZ(RD)
DATA goes high-impedance after OEB↑ or RDB↑.
WRB is HIGH (1).
(1)
ns
7
ns
7
ns
Controlled by design and process and not directly tested
RDB
tHIGH(RD)
WRB
th(OEB)
tsu(OEB)
OEB
tsu(CEB)
CEB
tsu(AD)
ADDR
DATA
3-State
td(RD)
tZ(RD)
th(RD)
T0287-01
Figure 6. MPU READ Timing Specifications
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MPU SWITCHING CHARACTERISTICS (WRITE)
PARAMETER
TEST CONDITIONS
DATA and ADDR setup time to WRB↓
tsu(WR)
MAX
UNIT
5
CEB setup time to WRB↓
OEB and RDB are HIGH.
OEB setup time to WRB↓
th(WR)
MIN
7
ns
2
DATA and ADDR hold time after WRB↑
OEB and RDB are HIGH.
OEB and CEB hold time after WRB↑
2
ns
0
tlow(WR)
Time WRB and CEB must remain simultaneously LOW
OEB and RDB are HIGH.
15
ns
thigh(WR)
Time CEB or WRB must remain HIGH between WRITEs.
OEB and RDB are HIGH.
10
ns
RDB
tlow(WR)
thigh(WR)
WRB
OEB
th(WR)
tsu(WR)
CEB
ADDR
DATA
T0288-01
Figure 7. MPU WRITE Timing Specifications
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JTAG SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
50
MHz
fTCK
JTAG clock frequency
tp(TCKL)
JTAG clock low period
10
ns
tp(TCKH)
JTAG clock high period
10
ns
tsu(TDI)
Input data setup time before TCK↑
Valid for TDI and TMS
1
ns
th(TDI)
Input data hold time after TCK↑
Valid for TDI and TMS
6
td(TDO)
Output data delay from TCK↓
ns
8
ns
1/fTCK
TCK
tp(TCKH)
tp(TCKL)
TDI
tsu(TDI)
th(TDI)
TDO
td(TDO)
T0289-01
Figure 8. JTAG Timing Specifications
ELECTRICAL CHARACTERISTICS
TX SWITCHING CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
HSTL MODE – DDR
fCLK(DAC)
(1)
TEST CONDITIONS
MIN
TYP
MAX
UNIT
420
MHz
ex. DAC5682
DAC output clock frequency
RL = 100 Ω
(1)
Because the output clock is DDR, this represents 840 MSPS real or 420 MSPS complex.
1/fCLK(DAC)
DACCLKC
DACCLK
DAC[15:0]P
I
Q
I
DAC[15:0]N
T0290-02
Figure 9. TX Timing Specifications (HSTL – DDR)
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LVDS SWITCHING CHARACTERISTICS
Over recommended operating conditions (unless otherwise noted). The following table uses a shorthand nomenclature, NxM.
N means the number of differential pairs used to transmit data from one ADC and M means the number of bits sent serially
down each LVDS pair. Thus, 8x2 means 8 LVDS pairs each containing 2 bits of information sent serially.
PARAMETER
16x1 SDR LVDS MODE
fCLK(ADC)
tsu(ADC[#]P)
th(ADC[#]P)
TEST CONDITIONS
TYP
MAX
UNIT
280
MHz
ex. ADS5444
ADC interface clock frequency
Input data setup time before CLK↑
Input data hold time after CLK↑
16x1 DDR LVDS MODE
MIN
See
(1)
See
(1) (2)
300
ps
See
(1) (2)
600
ps
ex. ADS5463
fCLK(ADC)
ADC interface clock frequency
See
(1)
tsu(ADC[#]P)
Input data setup time before CLK↑↓
See
(1) (2)
100
ps
See
(1) (2)
1200
ps
See
(1)
430
260
th(ADC[#]P)
Input data hold time after CLK↑↓
8x2 DDR LVDS MODE
fCLK(ADCA)
140
MHz
ex. ADS5545
ADCA interface clock frequency
280
MHz
tsu(ADCA[#/2]P)
Input data setup time before CLK↑↓
See
(1) (3)
th(ADCA[#/2]P)
Input data hold time after CLK↑↓
See
(1) (3)
fCLK(ADCB)
ADCB interface clock frequency
See
(1)
tsu(ADCB[#/2]P)
Input data setup time before CLK↑↓
See
(1) (4)
800
ps
th(ADCB[#/2]P)
Input data hold time after CLK↑↓
See
(1) (4)
400
ps
(1)
(2)
(3)
(4)
. For port A
. For port A
ps
ps
280
. For port B
. For port B
MHz
Specifications are limited by GC5325 performance and may exceed the example ADC capabilities for the given interface.
Setup and hold measured for ADC[15:0]P, ADC[15:0]N valid for (VOD > 250 mV) to/from ADCCLK and ADCCLKC clock crossing (VOD =
0).
Setup and hold measured for ADCA[7:0]P, ADCA[7:0]N valid for (VOD > 250 mV) to/from ADCACLK and ADCACLKC clock crossing
(VOD = 0).
Setup and hold measured for ADCB[7:0]P, ADCB[7:0]N valid for (VOD > 250 mV) to/from ADCBCLK and ADCBCLKC clock crossing
(VOD = 0).
1/fCLK(ADC)
CLK
CLKC
ADC[15:0]P
ADC[15:0]N
tsu(ADC[#]P)
th(ADC[#]P)
T0286-02
Figure 10. LVDS Timing Specifications (16 × 1 SDR LVDS)
1/fCLK(ADC)
CLK
CLKC
tsu(ADC[#]P)
ADC[15:0]P
ADC[15:0]N
th(ADC[#]P)
T0292-01
Figure 11. LVDS Timing Specifications (16 × 1 DDR LVDS)
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1/fCLK(ADCx)
CLK
CLKC
ADC[# bits/2]P
Even Bits
Odd Bits
Even Bits
Odd Bits
ADC[# bits/2]N
tsu(ADCx[#/2]P)
th(ADCx[#/2]P)
t=N
t=N+1
T0293-01
Figure 12. LVDS Timing Specifications (8 × 2 DDR LVDS)
APPENDIX A
See the TMS320C672x DSP Universal Host Port Interface (UHPI) reference guide (SPRU719).
ADDR/DATA BUS (16-Bit)
UHPI_HD[15:0]
DATA READY
UHPI_HRDYB
HALFWORD STROBE
UHPI_HD[16]/HHWIL
CHIP SELECT
Host
Processor
BYTE ENABLE
CONTROL INPUT
UHPI_HCS
(1)
UHPI_HBE[1:0]B
(2)
UHPI_HCNTL[1:0]
FUNDAMENTAL STROBE
C6727 DSP
Asynchronous
Mode
UHPI_HCSB/UHPI_HDS[2:1]B
READ/WRITE CONTROL
UHPI_HRWB
DSP INTERRUPT
AMUTE2/HINTB
HOST INTERRUPT
AFSR2
B0281-01
(1)
Byte enables are aplicable to single HPID accesses. All byte enables must be active during HPID with post-increment
(burst) UHPI accesses.
(2)
Control inputs selecting between HPIA, HPIC, HPID, and HPID with post-increment accesses.
Figure 13. Host-to-DSP Interface (Multiplexed Host Address/Data Dual Halfword)
GLOSSARY OF TERMS
3G
Third generation (refers to next-generation wideband cellular systems that use CDMA)
3GPP
Third generation partnership project (W-CDMA specification, www.3gpp.org)
3GPP2
Third generation partnership project 2 (cdma2000 specification, www.3gpp2.org)
ACLR
Adjacent channel leakage ratio (measure of out-of-band energy from one CDMA carrier)
ACPR
Adjacent channel power ratio
ADC
Analog-to-digital converter
BW
Bandwidth
20
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CCDF
Complementary cumulative distribution function
CDMA
Code division multiple access (spread spectrum)
CEVM
Composite error vector magnitude
CFR
Crest factor reduction
CMOS
Complementary metal oxide semiconductor
DAC
Digital-to-analog converter
dB
Decibels
dBm
Decibels relative to 1 mW (30 dBm = 1 W)
DDR
Dual data rate (ADC output format)
DSP
Digital signal processing or digital signal processor
EVM
Error vector magnitude
FIR
Finite impulse response (type of digital filter)
I/Q
In-phase and quadrature (signal representation)
IF
Intermediate frequency
IIR
Infinite impulse response (type of digital filter)
JTAG
Joint Test Action Group (chip debug and test standard 1149.1)
LO
Local oscillator
LSB
Least-significant bit
Mb
Megabits (divide by 8 for megabytes MB)
MSB
Most-significant bit
MSPS
Megasamples per second (1×106 samples/s)
PA
Power amplifier
PAR
Peak-to-average ratio
PCDE
Peak code domain error
PDC
Peak detection and cancellation (stage)
PDF
Probability density function
RF
Radio frequency
RMS
Root mean square (method to quantify error)
SDR
Single data rate (ADC output format)
SEM
Spectrum emission mask
SNR
Signal-to-noise ratio (usually measured in dB or dBm)
UMTS
Universal mobile telephone service
W-CDMA
Wideband code division multiple access (synonymous with 3GPP)
WiBRO
Wireless broadband (Korean initiative IEEE 802.16e)
WiMAX
Worldwide Interoperability of Microwave Access (IEEE 802.16e)
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PACKAGE OPTION ADDENDUM
www.ti.com
3-Feb-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
GC5325IZND
ACTIVE
BGA
ZND
Pins Package Eco Plan (2)
Qty
352
40
Pb-Free
(RoHS)
Lead/Ball Finish
SNAGCU
MSL Peak Temp (3)
Level-3-260C-168 HR
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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