OPTODIODE UVG100

PHOTODIODE 100 mm2
UVG100
FEATURES
•
•
•
•
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Square active area
Ideal for 193-400 nm detection
100% internal QE
Excellent UV response
Protective cover plate
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Active Area
TEST CONDITIONS
MIN
10 mm x 10 mm
TYP
@ 254 nm
0.08
Shunt Resistance, Rsh
@ ± 10 mV
20
0.09
UNITS
mm2
100
Responsivity, R
0.13
A/W
MOhms
Reverse Breakdown Voltage, VR
IR = 1 µA
10
Capacitance, C
VR = 0 V
10
Response Time, tr
MAX
RL = 50 Ω, VR = 10 V
Volts
20
nF
10
usec
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Storage Temperature Range
Operating Temperature Range
Maximum Junction Temperature
Lead Soldering Temperature1
-20° TO 100°C
-20°C TO 80°C
100°C
240°C
1
0.08" from case for 10 seconds
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013
PHOTODIODE 100 mm2
Responsivity (A/W)
0.6
UVG100
RESPONSIVITY
0.5
0.4
0.3
0.2
0.1
0.0
200
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013